2SC2964 Search Results

2SC2964

Contextual Info: SavantIC Semiconductor Product Specification 2SC2964 Silicon NPN Power Transistors DESCRIPTION •With TO-3 package ·High breakdown voltage ·Fast switching speed. ·Wide area of safe operation APPLICATIONS ·For switching regulator applications PINNING see Fig.2

2SC2429A

Abstract: 2SC2965 2SC2920 C2429A 2SC2429 2SC2964 C2429 C2920 1S90
Contextual Info: FUJITSU MIC R O E L E C T R O N I C S 31E J> HI 374^2 001fc52ô b H FMI c Q if in r ^ JsnuQfy 1990 Edition1-1_ - , ’ •:= P R O D U C T P R O F IL E — — P 2 3 - Î3 i t FUJITSU . * 2SC2920, 2SC2429, 2SC2429A, 2SC2964, 2SC2965 Silicon High Speed Power Transistor_

srf 2920

Contextual Info: Ja n u a ry 1990 E d itio n 1.1 P R O D U C T P R O F ILE F u jfrsu : 2SC2920, 2SC2429, 2SC2429A, 2SC2964, 2SC2965 Silicon High Speed Power Transistor DESCRIPTION T h is series are s ilic o n N P N p la n e r g eneral p u rp o se , h ig h p o w e r s w itc h in g

2SC2964

Contextual Info: Inchange Semiconductor Product Specification 2SC2964 Silicon NPN Power Transistors DESCRIPTION •With TO-3 package ·High breakdown voltage ·Fast switching speed. ·Wide area of safe operation APPLICATIONS ·For switching regulator applications PINNING see Fig.2

2SC2978

Abstract: 2SC2936 2SC2950 2SA1227 2SC2954 2SC2918 2SC2932 2SC2933 2SC2936H 2SC2941
Contextual Info: - 140 - Ta=25?C 1*EP(àTc=25‘1C M 2SC2932 2SC2933 2SC2936 2SC2936H 2SC2941 2SC2944 2SC2946 2SC2946(1) 2SC2949 2SC2950 2SC2951 2SC2952 2SC2953 2SC2954 2SC2958 2SC2959 2SC296Ö 2SC2964 2SC2965 2SC2975 2SC2976 2SC2977 2SC2978 2SC2979 2SC2981 2SC2982 2SC2983

Contextual Info: 2SC2964 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)400ö V(BR)CBO (V)600 I(C) Max. (A)15 Absolute Max. Power Diss. (W)150 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)100u @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

2SC5072

Abstract: 2SC4698 4685 4686 2SC470-3 2SC4703 4670K 2SC4001 2SC4176 2SC4443
Contextual Info: - 196 - m s T y p e No. 2 SC 4666 tt « Manuf. J z B m SANYO TOSHIBA K S. 2SC 4667 Ä S. 2SC4443 2SC 4668 S tB ä 2SC4523 2SD1412 » S tc 2SC4406 2SC4250 2SC 4669 > fö T 2SC 4670 2SC 4671 / = 2SC 4672 □— A = 2SC 4674 B 4 "" # 2SC 4678 ÜL S. 2SC 4679

2SB415

Abstract: 2SB 710 2sc1061 2sd524 2sb504 HD68P01 2sb507 2sa762 2sc827 2SC1362
Contextual Info: V W Ki * 91 ^ # b h 7 >->" X ? i, t ^ X M X V M W X M £ (E I A J i: 2 S W Z x R m z t i S , x t iz J :'), ? 4000H£< * ^ t i X t 4 ', ^ i t . : w ° n l l ±, Z iih J M I1 L -C A J t t , g 4 - ? 4 M # c o ( , c o T ' & , I W H H c o f ^ 6 i> w 1, ^ & >) b ') £ i ~

TO-220 JEDEC

Abstract: 2SA1042 2SC2431 Jedec TO-3 FT2551 JEDEC
Contextual Info: Section 1 Ring Emitter Transistors — At a Glance Devio# C a a a n a Polarity M axim um Rating« V c e o (V ) lc (A ) 1-3 2SA1041 2SA1042 2SC2431 2SC2432 JEDEC TO-3 PNP PNP NPN NPN -120 -70 120 70 -15 -15 15 15 1-7 2SA1043 2SA 1044 2SC2433 2SC2434 JEDEC TO-3

2SC2625

Abstract: power transistor 2sc2625 datasheet 2SC5000 2SA793 2sc2335 2sc2625 equivalent 2SC1116A 2SC2306 2SC2829 2sb600
Contextual Info: STI Type: 2C5000 Industry Type: 2C5000 V CEO: ICBO ICEX: h FE: IC: V CE: Case Style: STI Type: 2N2453DIE Industry Type: 2C2453 V CEO: 30 ICBO ICEX: h FE: 150 IC: 1.0m V CE: Case Style: STI Type: 2N3807DIE Industry Type: 2C3807 V CEO: 60 ICBO ICEX: h FE: 300

2SC2751M

Abstract: 2sd377 bup13
Contextual Info: POWER SILICON NPN Item Number Part Number I C 5 10 >= TIP531 TIP531 TIP533 TIP533 TIP533 BUP23 BUP23 BUP23 BUS23 BUS23 20 25 30 35 40 45 50 (A) (A) (A) (A) CAl SDM4039 SDM4041 BU121 BUX13 SDM4040 SDM4045 SML14413 PTC6677P 2N6934 2N6934 MJH6677 RJH6677 2N6677

STRS6307

Abstract: STR5412 2N3055 TO-220 S2000A3 STRS6309 S2000a2 BDW36 2SC3883 strs6308 STR6020
Contextual Info: 2N3054 TO-66 2N32741 TO-66 2N4240 TO-66 2N4908 TO-3 2N3054A TO-66 2N3766 TO-66 2N4273 TO-66 2N4909 TO-3 2N3055 TO-3 2N3767 TO-66 2N4298 TO-66 2N4910 TO-66 2N3171 TO-3 2N3771 TO-3 2N4347 TO-3 2N4911 TO-66 2N3172 TO-3 2N3772 TO-3 2N4348 TO-3 2N4912 TO-66 2N3173