2SC2295 Search Results

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA1022 Silicon PNP epitaxial planar type For high-frequency amplification Complementary to 2SC2295 Unit: mm M Di ain sc te on na tin nc ue e/ d 0.40+0.10 –0.05 0.16+0.10 –0.06

2SA1022

Abstract: 2SC2295
Contextual Info: Transistor 2SA1022 Silicon PNP epitaxial planer type For high-frequency amplification Complementary to 2SC2295 1.9±0.1 Ta=25˚C Unit Collector to base voltage VCBO –30 V Collector to emitter voltage VCEO –20 V Emitter to base voltage VEBO –5 V Collector current

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA1022 Silicon PNP epitaxial planar type For high-frequency amplification Complementary to 2SC2295 Unit: mm 0.40+0.10 –0.05 0.16+0.10 –0.06 0.4±0.2 5˚ 1.50+0.25 –0.05 2 1 (0.95) (0.95)

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC2295 Silicon NPN epitaxial planar type For high-frequency amplification Complementary to 2SA1022 Unit: mm 0.40+0.10 –0.05 0.16+0.10 –0.06 0.4±0.2 2 1 (0.95) (0.95) 1.9±0.1

2SA1022

Abstract: 2SC2295
Contextual Info: Transistor 2SC2295 Silicon NPN epitaxial planer type For high-frequency amplification Complementary to 2SA1022 Unit: mm +0.2 2.8 –0.3 0.65±0.15 1.45 0.95 1.5 –0.05 1 0.95 3 +0.1 +0.2 ● 2.9 –0.05 ● Optimum for RF amplification of FM/AM radios. High transition frequency fT.

BC238BP

Abstract: BF494C BC238CP BSX77 2N295 BF194 2N2954 2SC398 bf494 motorola BF332
Contextual Info: RF LOW-POWER SILICON NPN Item Number Part Number V BR CEO 5 10 2N4435 2SC2776 2SC2778 2N3293 2N3294 2N2476 2SC398 2SC398 2SC398 2SC399 ~~g~~~ 15 20 25 30 35 40 2N2477 2N2847 2N2848 2N2958 2N3115 2N3982 2N3982 2N3982 2SC2295 2SC33 2SC204 BSX76 BSX77 2SC323

2SA1022

Abstract: 2SC2295
Contextual Info: Transistors 2SC2295 Silicon NPN epitaxial planar type For high-frequency amplification Complementary to 2SA1022 Unit: mm 0.40+0.10 –0.05 0.16+0.10 –0.06 0.4±0.2 2 1 0.95 (0.95) 1.9±0.1 (0.65) • Optimum for RF amplification of FM/AM radios • High transition frequency fT

Contextual Info: Product specification 2SC2295 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 0.4 3 High transition frequency fT. 1 0.55 Optimum for RF amplification of FM/AM radios. +0.1 1.3-0.1 +0.1 2.4-0.1 Features 2 +0.1 0.95-0.1 +0.1 1.9-0.1 Mini type package, allowing downsizing of the equipment and

2SA1022

Abstract: 2SC2295
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA1022 Silicon PNP epitaxial planar type For high-frequency amplification Complementary to 2SC2295 Unit: mm 0.40+0.10 –0.05 0.16+0.10 –0.06 0.4±0.2 5˚ 1.50+0.25 –0.05 2 1 (0.95) (0.95)

2SA1022

Abstract: 2SC2295
Contextual Info: Transistors 2SA1022 Silicon PNP epitaxial planar type For high-frequency amplification Complementary to 2SC2295 Unit: mm 0.40+0.10 –0.05 0.16+0.10 –0.06 0.4±0.2 5˚ 1.50+0.25 –0.05 2 1 0.95 (0.95) 1.9±0.1 (0.65) • High frequency voltage fT • Mini type package, allowing downsizing of the equipment and

2SA1022

Abstract: 2SC2295
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC2295 Silicon NPN epitaxial planar type For high-frequency amplification Complementary to 2SA1022 Unit: mm M Di ain sc te on na tin nc ue e/ d 0.40+0.10 –0.05 0.16+0.10 –0.06

2SA1022

Abstract: 2SC2295
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA1022 Silicon PNP epitaxial planar type For high-frequency amplification Complementary to 2SC2295 Unit: mm M Di ain sc te on na tin nc ue e/ d 0.40+0.10 –0.05 0.16+0.10 –0.06

2SA1022

Abstract: 2SC2295
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC2295 Silicon NPN epitaxial planar type For high-frequency amplification Complementary to 2SA1022 Unit: mm 0.40+0.10 –0.05 0.16+0.10 –0.06 0.4±0.2 2 1 (0.95) (0.95) 1.9±0.1

2SA1022

Abstract: 2SC2295
Contextual Info: Transistor 2SC2295 Silicon NPN epitaxial planer type For high-frequency amplification Complementary to 2SA1022 Unit: mm 0.40+0.10 ñ0.05 • Features ● 0.4±0.2 5° Optimum for RF amplification of FM/AM radios. High transition frequency fT. Mini type package, allowing downsizing of the equipment and

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC2295 Silicon NPN epitaxial planar type For high-frequency amplification Complementary to 2SA1022 Unit: mm M Di ain sc te on na tin nc ue e/ d 0.40+0.10 –0.05 0.16+0.10 –0.06

2SA1022

Abstract: 2SC2295
Contextual Info: Transistor 2SC2295 Silicon NPN epitaxial planer type For high-frequency amplification Complementary to 2SA1022 Unit: mm +0.2 2.8 –0.3 0.65±0.15 1.45 0.95 1.5 –0.05 1 0.95 3 +0.1 +0.2 ● 2.9 –0.05 ● Optimum for RF amplification of FM/AM radios. High transition frequency fT.

2SA1022

Abstract: 2SC2295 transistor to6
Contextual Info: Transistor 2SA1022 Silicon PNP epitaxial planer type For high-frequency amplification Complementary to 2SC2295 Unit: mm +0.2 2.8 –0.3 1.45 0.95 3 +0.1 1.9±0.2 1 0.95 +0.2 0.65±0.15 Ratings Unit Collector to base voltage VCBO –30 V Collector to emitter voltage

smd marking VB

Abstract: SMD FM IC Silicon NPN Epitaxial Planar Type 2SC2295 marking VB
Contextual Info: Transistors IC SMD Type Silicon NPN Epitaxial Planar Type 2SC2295 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 0.4 3 High transition frequency fT. 1 0.55 Optimum for RF amplification of FM/AM radios. +0.1 1.3-0.1 +0.1 2.4-0.1 Features 2 +0.1 0.95-0.1 +0.1 1.9-0.1

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC2295 Silicon NPN epitaxial planar type For high-frequency amplification Complementary to 2SA1022 Unit: mm 0.40+0.10 –0.05 0.16+0.10 –0.06 0.4±0.2 2 1 (0.95) (0.95) 1.9±0.1

2SA1022

Abstract: 2SC2295
Contextual Info: Transistor 2SA1022 Silicon PNP epitaxial planer type For high-frequency amplification Complementary to 2SC2295 Unit: mm +0.2 2.8 –0.3 1.45 0.95 3 +0.1 1.9±0.2 1 0.95 +0.2 0.65±0.15 Ratings Unit Collector to base voltage VCBO –30 V Collector to emitter voltage

2SA973

Abstract: 2SC2263 2SC2295 2SA1022 t31i
Contextual Info: PANASONIC INDL/ELEKiSEMI> 7SC D | 1^32054 □ OG'Usq 7 f~ T Ji -f 7 2SC2263 2SC2263 NPN jc fcf £ '> tj U > $•'> 7 \/~f l — NP N Epitaxial Planar Low Noise Amplifier ' J / Complementary Pair with 2SA973 2SA973£:a >71) ^ /F e a tu re s it eP IC E E N V ¿ ^

MIP2F3

Abstract: MIP2F4 MIP382 MIP2E7DMY mip2f2 mip291 MIP414S MIP2E5DMY mip411 MIP3E3SMY equivalent
Contextual Info: 2009 ver.2 Semiconductor Selection Guide Microcomputers, Bipolar ICs, Discrete Semiconductors Caution for Safety „ This product contains Gallium Arsenide GaAs . DANGER GaAs powder and vapor are hazardous to human health if inhaled or ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the

ma3df25

Abstract: 2PG011 DD5X062J dg3d501 DSKTJ04 DA3DF50 DB2U308 SSMini2-F5-B DSK3J02 DSC3F01
Contextual Info: 2009 Discrete Semiconductors New Products Line-up Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

sn76131

Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Contextual Info: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157