2SC131 Search Results

TO-92B

Abstract: 2SA0720 2SC1318
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA0720 Silicon PNP epitaxial planar type For low-frequency power amplification and driver amplification Complementary to 2SC1318 • Package  Complementary pair with 2SC1318 

2SA720A

Abstract: 2SA720A R 2SC1318A DSA003766 2SA720A transistor
Contextual Info: Transistor 2SA720A Silicon PNP epitaxial planer type For low-frequency driver amplification Complementary to 2SC1318A Unit: mm ● High collector to emitter voltage VCEO. Optimum for the driver stage of a low-frequency and 25 to 30W output amplifier. • Absolute Maximum Ratings

2SC1318

Abstract: 2SC1318R 2SC1318 transistor 2SC1318Q 2SA720 2SC1318-S 2SC1318-R 2SC1318 R
Contextual Info: 2SC1318 0.5 A, 60 V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free TO-92 FEATURES   Low Collector to Emitter Saturation Voltage VCE sat Complementary Pair with 2SA720

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 2SC1318A TRANSISTOR（NPN） TO-92 FEATURES 1. EMITTER ∙ Collector output capacitance : 2. COLLECTOR 3. BASE Cob=11 pF TYP ,20 pF (MAX) 1 2 3 MAXIMUM RATINGS* TA=25℃ unless otherwise noted

2SA720

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA0719, 2SA0720 (2SA719, 2SA720) Silicon PNP epitaxial planar type For low-frequency power amplification and driver amplification Complementary to 2SC1317, 2SC1318 Unit: mm 4.0±0.2

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC1318A Silicon NPN epitaxial planar type For low-frequency driver amplification Complementary to 2SA0720A Unit: mm 4.0±0.2 5.1±0.2 5.0±0.2 0.7±0.1 12.9±0.5 • High collector-emitter voltage (Base open) VCEO

2SC1318

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC1317, 2SC1318 Silicon NPN epitaxial planar type Unit: mm For low-frequency power amplification and driver amplification Complementary to 2SA0719 and 2SA0720 4.0±0.2 5.1±0.2 5.0±0.2

TO-237a

Abstract: 2sc1175 92PU51A 2SA598 92PU45 TO-92B 2SC1346 92PU01A 2SA659 2SA719
Contextual Info: Medium Power Amplifiers and Switches TYPE POLA­ NO. RITY M A XIM UM RATINGS CASE Pd IC VCEO raW (A) (V) HFE min max V CE(sat) IT Cob C O M PLE IC V CE max min max MENTARY (mA) (V) (V) (A) (M Hz) (PF) TYPE 17+ 2SC1008 2SC1175 2SC1209 2SC1317 2SC1318 N N

2SA720A

Abstract: 2SC1318A 2SA720A transistor 2sa72
Contextual Info: Transistor 2SC1318A Silicon NPN epitaxial planer type For low-frequency driver amplification Complementary to 2SA720A Unit: mm 5.0±0.2 4.0±0.2 High collector to emitter voltage VCEO. Optimum for the driver stage of a low-frequency and 25 to 30W output amplifier.

2SA0720A

Abstract: 2SC1318A
Contextual Info: Transistors 2SC1318A Silicon NPN epitaxial planar type For low-frequency driver amplification Complementary to 2SA0720A Unit: mm 4.0±0.2 5.1±0.2 5.0±0.2 0.7±0.1 12.9±0.5 • High collector-emitter voltage Base open VCEO • Optimum for the driver stage of a low-frequency and 25 W to 30

2SC137

Abstract: 2SC306 2SC138 2sc230 2SC458LG C 2SC130 2SC387AGTM 2SC238 2SC309 2SC132
Contextual Info: - 96 - m % T a = 2 5 ^ , * E P Í á T c = 2 5 eC M S 2SC27 € ffl & VcBO VcEO Ice DC) Pc Pc* (V) (V) (A) (W) (W) s± ii HF A 2SC130 S± ii HF A 60 1 1.8 2SC131 ܱ Ü HS SW 40 0.3 0. 35 2SC132 ä± ü HS SW 20 0.3 0.35 2SC134 S± ü HS SW 40 0.3 2SC135

Contextual Info: Transistors 2SC1317, 2SC1318 Silicon NPN epitaxial planar type Unit: mm For low-frequency power amplification and driver amplification Complementary to 2SA0719 and 2SA0720 4.0±0.2 5.1±0.2 5.0±0.2 • Low collector-emitter saturation voltage VCE sat • Complementary pair with 2SA0719 and 2SA0720

transistor 2sa720

Contextual Info: Transistor 2SA0719, 2SA0720 2SA719, 2SA720 Silicon PNP epitaxial planer type For low-frequency power amplification and driver amplification Complementary to 2SC1317 and 2SC1318 Unit: mm 5.0±0.2 5.1±0.2 • Features Symbol Collector to 2SA0719 base voltage

2SC1318

Abstract: 2SC1318 P 2SC1318P 2SC1317 2SA0720 2SC1318C 2SC1318 P,R
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC1318 Silicon NPN epitaxial planar type For low-frequency power amplification and driver amplification Complementary to 2SA0720 • Package  Low collector-emitter saturation voltage VCE(sat)

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA0719 Silicon PNP epitaxial planar type For low-frequency power amplification and driver amplification Complementary to 2SC1317 • Package M Di ain sc te on na tin nc ue e/ d  Features

2SA720A

Abstract: 2SC1318A
Contextual Info: Transistor 2SC1318A Silicon NPN epitaxial planer type For low-frequency driver amplification Complementary to 2SA720A Unit: mm ● High collector to emitter voltage VCEO. Optimum for the driver stage of a low-frequency and 25 to 30W output amplifier. • Absolute Maximum Ratings

2SC1318A

Abstract: 2SA0720A 2SA720A
Contextual Info: Transistor 2SC1318A Silicon NPN epitaxial planer type For low-frequency driver amplification Complementary to 2SA0720A 2SA720A Unit: mm ● High collector to emitter voltage VCEO. Optimum for the driver stage of a low-frequency and 25 to 30W output amplifier.

2SA0720A

Abstract: 2SA720A 2SC1318A SC-43A
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA0720A (2SA720A) Silicon PNP epitaxial planar type For low-frequency driver amplification Complementary to 2SC1318A Unit: mm 0.7±0.1 • Absolute Maximum Ratings Ta = 25°C Collector-emitter voltage (Base open)

2SC1318F

Abstract: 2SC1317 2SA0719 2SC1318 2SC1318P
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC1317 Silicon NPN epitaxial planar type For low-frequency power amplification and driver amplification Complementary to 2SA0719 • Package  Low collector-emitter saturation voltage VCE(sat)

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA0720A (2SA720A) Silicon PNP epitaxial planar type For low-frequency driver amplification Complementary to 2SC1318A Unit: mm 0.7±0.1 • Absolute Maximum Ratings Ta = 25°C Symbol

2sc1318

Abstract: 2sc131
Contextual Info: 2SC1318 NPN TO-92 Bipolar Transistors TO-92 1. EMITTER 2. COLLECTOR 3. BASE Features Collector output capacitance : Cob=11 pF (TYP),20 pF (MAX) MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 80 V

2SC200I

Abstract: D471 2SA593 2sc1175 2SC1346 92PU01A 92PU45 2SA659 2SA719 2SA730
Contextual Info: Medium Power Amplifiers and Switches TYPE ' FOLA 1 NO. RJTY CASE MAXIMUM RATINGS W IC VCEO mW (A) (V) HFE aùm VCB<m «) IM I 1C (*A) VCR (V) (V) (A) fT min (MHz) tM X Cok COMPLE 1 m x MENTARV TV PIS <PF) 2 SCI 004 2 SCI 175 2SC1209 2SC1317 •2SC1318 M

2SC1318

Abstract: 2SC1317 transistor 2SC1317
Contextual Info: Transistor 2SC1317, 2SC1318 Silicon NPN epitaxial planer type For low-frequency power amplification and driver amplification Complementary to 2SA719 and 2SA720 Unit: mm 5.0±0.2 Low collector to emitter saturation voltage VCE sat . Complementary pair with 2SA719 and 2SA720.

2SC1316

Contextual Info: SavantIC Semiconductor Product Specification 2SC1316 Silicon NPN Power Transistors DESCRIPTION •With TO-66 package ·High breakdown voltage APPLICATIONS ·Suitable for switching power supplies in TV sets PINNING PIN DESCRIPTION 1 Base 2 Emitter 3 Collector