2SC11 Search Results

2sc1173

Abstract: 2SA473
Contextual Info: SILICON NPN EPITAXIAL TYPE 2SC1173 U n i t 10.3 MAX. POWER AMPLIFIER APPLICATIONS, i tí m m 0 3 .6 ± 0 .2 CAR RADIO, CAR STEREO OUTPUT STAGE AMPLIFIER APPLICATIONS. FEATURES: • Good Linearity of hpE• Complementary to 2SA473 and 5 Watts Output Applications.

12OG

Abstract: 2-21A1A
Contextual Info: TOSHIBA {DISCRETE/OPTO} 9097250 TOSHIBA T b <D IS C R E T E / O P T O ' ‘ SILICON NPN TRIPLE DIFFUSED TYPE PCT PROCESS) DE J t U H T S S O T 2SC1195 5òC 07442 rrH HIGH VOLTAGE SWITCHING APPLICATIONS. 1 - CO h - i- 4 - -+ 0.09

2sc1162

Abstract: 2sc1162 equivalent 2SA715
Contextual Info: Inchange Semiconductor Product Specification 2SC1162 Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-126 package ・Complement to type 2SA715 APPLICATIONS ・For low frequency power amplifier applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector;connected to

2SA715

Abstract: 2SC1162 LE20A
Contextual Info: AOK AOK Semiconductor Product Specification Silicon PNP Power Transistors 2SA715 DESCRIPTION • With TO-126 package • Complement to type 2SC1162 APPLICATIONS • Low frequency power amplifier applications PINNING PIN 1 DESCRIPTION Emitter Collector;connected to

Contextual Info: Powered -a by 18 T0-3 CAN PACKAGE SERIES n 1 TO-3 ICminer.com H CD > Ö H H n 70 m Electronic-Library —3 Application MAX. fc Type No. NPN Power Am p. 2SC1195 PC PNP 2SA739 f T TYP. v CE(sat) M A X < *v CB0 Tc=2!?C I ; DC-DC Converter Series Reg. ! v CE0

2SC1115

Abstract: 2SA746
Contextual Info: Inchange Semiconductor Product Specification 2SC1115 Silicon NPN Power Transistors DESCRIPTION •With TO-3 package ·Complement to type 2SA746 ·Wide area of safe operation APPLICATIONS ·For audio frequency power amplifier applications PINNING see Fig.2

2SC1106

Abstract: Power IC
Contextual Info: SavantIC Semiconductor Product Specification 2SC1106 Silicon NPN Power Transistors DESCRIPTION •With TO-3 package ·High power dissipation ·High breakdown voltage APPLICATIONS ·For voltage regulator ,inverter and switching mode power supply applications

2SA647

Abstract: 2SC1157
Contextual Info: SavantIC Semiconductor Product Specification 2SC1157 Silicon NPN Power Transistors DESCRIPTION •With TO-202 package ·High transition frequency ·Complement to type 2SA647 APPLICATIONS ·For power amplifier switching applications PINNING see Fig.2 PIN DESCRIPTION

2SC1161

Contextual Info: SavantIC Semiconductor Product Specification 2SC1161 Silicon NPN Power Transistors DESCRIPTION •With TO-66 package ·Low collector saturation voltage APPLICATIONS ·For low frequency high voltage power amplifier TV vertical deflection output applications.

2SC1170A

Contextual Info: SavantIC Semiconductor Product Specification 2SC1170A Silicon NPN Power Transistors DESCRIPTION •With TO-3 package ·High voltage ,high speed APPLICATIONS ·Designed for use in large screen color deflection circuits PINNING see Fig.2 PIN DESCRIPTION 1 Base

Contextual Info: TOSHIBA {DISCRETE/OPTO} 9097250 Sb T O SH IBA DE I TDTTSSD QDD7444 2 | b 6C D ISC R ET E /O P T O Ú7 4 4 4 0 ~ f~ 2 f 2SC1199 SILICON NPN EPITAXIAL PLANAR TYPE _ Unit in mm HIGH FREQUENCY WIDE BAND AMPLIFIER APPLICATIONS. ¡ZÍ9.39MAX. HIGH FREQUENCY LOW NOISE AMPLIFIER APPLICATIONS.

2Sa715

Contextual Info: 2SA715 Silicon PNP Epitaxial HITACHI Application Low frequency power amplifier complementary pair with 2SC1162 Outline TO -126 MOD I 1. Emitter 2. Collector 3. Base Absolute Maximum Ratings Ta = 25 °C Item Symbol Rating Unit Collector to base voltage ^G B G

Hitachi DSA002788

Contextual Info: 2SA715 Silicon PNP Epitaxial Application Low frequency power amplifier complementary pair with 2SC1162 Outline TO-126 MOD 1 1. Emitter 2. Collector 3. Base 2 3 Absolute Maximum Ratings Ta = 25°C Item Symbol Rating Unit Collector to base voltage VCBO –35

Contextual Info: 2SC1196 Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V)35 V(BR)CBO (V)60 I(C) Max. (A)750m Absolute Max. Power Diss. (W)10 Minimum Operating Temp (øC) Maximum Operating Temp (øC)175õ I(CBO) Max. (A)5.0uØ @V(CBO) (V) (Test Condition)

2SC1166

Abstract: 2sc1166y transistor BC RH 2sc1166-0 2sc1166 o 2SA661 2SC1166-Y 16F TRANSISTOR RH-16 2SC1166-GR
Contextual Info: i/U 3 > N P N x ti* * 5 /7 h 7 > v X i/ P C m SILICON NPN EPITAXIAL TRANSISTOR (PCT PROCESS) 2SC1166 O Driver Stage Amplifier Applications. Voltage Amplifier Applications. O • S t f E - t r f ; V Ceo ^ 5 0 V • : Pc = 600mW (Ta=25°C) • 2SA 661 t ^ y 7 ° ) s y * y

TO-237a

Abstract: 2sc1175 92PU51A 2SA598 92PU45 TO-92B 2SC1346 92PU01A 2SA659 2SA719
Contextual Info: Medium Power Amplifiers and Switches TYPE POLA­ NO. RITY M A XIM UM RATINGS CASE Pd IC VCEO raW (A) (V) HFE min max V CE(sat) IT Cob C O M PLE IC V CE max min max MENTARY (mA) (V) (V) (A) (M Hz) (PF) TYPE 17+ 2SC1008 2SC1175 2SC1209 2SC1317 2SC1318 N N

2SC3361-5

Abstract: 2SC181SL-O BFR41 L 2 KT3102 TEC9014B LOW-POWER SILICON NPN 2S0637 KT620A KT3102A
Contextual Info: LOW-POWER SILICON NPN Item Number Part Number 10 - 1S - 20 2S 30 2SD601A 2S0637 2SC2000K 2SC2603 2SC147S KT620A HSE4S4 MPS-A09 KT3102A 2N4966 ~~~~~~ JE9214A TEC9014B MPSA09 MPSA09 MPSA09 2SC117S 2SC876 2SC876 ~~~~~ 2S01490 250789 BFT31 2NS310 TE01402A BFX68

KT601

Abstract: 2SC1708 2SC2675 kt601am 2SC2089BL KT601A 2SC3328Y LOW-POWER SILICON NPN SM-150 diode 2SC1627Y
Contextual Info: LOW-POWER SILICON NPN Item Number Part Number 10 >= 20 2S0438 2S0875 2SC3359 2SC3359 2SC1198K 2S01782K A 2S01782K (A) 2SC2061 ~~~~ ~ t~~ ~~g~~~~ 25 30 Rohm Corp Rohm Corp Rohm Co Ltd Indust Mexi NECElecslnc NEC Corp JA Sanken Elec Rohm Co Ltd ~anyo E!ect

044H11

Abstract: KT808B 044H10 kt808BM BJG 36 kt808 2s021 B0313 2n1810
Contextual Info: POWER SILICON NPN Item Number Part Number I C 5 10 20 SOT7S09 SOT7S09 2N3714 B0245B B0245B B0245B B0313 2S041 ~~~g~ 25 30 ST28143 2SC1115 2SC1115 OTL3203 SOT3207 SOT3207 SOT3207 2N500S ~~~~n 35 40 2N5S24 2N5730 2N4301 2NS128 BOY91 BOS11 GSDB10008 SOT701S

2SC1169

Abstract: L4 toshiba 3I33
Contextual Info: 5h TOSHIBA {DISCRETE/OPTO} DE I ^ D T V a S D DOQTMBfl 7 | / 9097250 TOSHIBA ' C D I S C R E T E /O P T O SILICON NPN EPITAXIAL PLANAR TYPE 5bC 0 7 ^ 3 8 0 T - 3 / - 3 3 2SC1169 . Unit in mm VHF BAND POWER AMPLIFIER APPLICATIONS. 0a39MAX 8.5MAX FEATURES

Contextual Info: 2SC1174 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)500 V(BR)CBO (V)1.2k I(C) Max. (A)3.5 Absolute Max. Power Diss. (W)50 Maximum Operating Temp (øC)140õ I(CBO) Max. (A) @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

2SA473

Abstract: 2SC1173 2SA473 O
Contextual Info: AOK AOK Semiconductor Product Specification 2SA473 S ilicon PNP Power Transistors DESCRIPTION • W ith T 0 2 2 0 package • C om plem ent to type 2SC1173 • C ollector current :IC=-3A • C ollector dissipation:Pc =10W @ Tc=25‘C APPLICATIONS • Low frequency pow er am plifier

2SC1116A

Abstract: 2SA747A 2sc1116
Contextual Info: AOK AOK Semiconductor Product Specification Silicon PNP Power Transistors 2SA747A DESCRIPTION • With TO-3 package • Wide area of safe operation • Complement to type 2SC1116A APPLICATIONS • For audio and general purpose applications PINNING see Fig.2

2SA746

Abstract: 2SC1115
Contextual Info: JMnic Product Specification 2SA746 Silicon PNP Power Transistors DESCRIPTION ・With TO-3 package ・Wide area of safe operation ・Complement to type 2SC1115 APPLICATIONS ・For audio and general purpose applications PINNING see Fig.2 PIN DESCRIPTION 1 Base