2SB141 Search Results

2SB1418

Abstract: 2SB1418A 2SD2138
Contextual Info: Power T ransistors 2SB1-418, 2SB1418Ä 2SB1418, 2SB1418A Package Dimensions Silicon PNP Epitaxial Planar Darlington Type Power Amplifier Complementary Pair with 2SD 2138 • Features • H igh D C c u r re n t g ain I i f e • H igh s p e e d sw itc h in g

Contextual Info: Product specification 2SB1412 TO-252 6.50 +0.2 5.30-0.2 Features +0.15 1.50 -0.15 +0.15 -0.15 Unit: mm 2.30 +0.1 -0.1 +0.8 0.50-0.7 +0.1 0.60-0.1 2.3 3 .8 0 +0.15 5.55 -0.15 0.127 max +0.25 2.65 -0.1 +0.1 0.80-0.1 +0.28 1.50 -0.1 +0.2 9.70 -0.2 PNP silicon transistor.

2SB1416

Abstract: 2SD2136
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD2136 Silicon NPN triple diffusion planar type For power amplification Complementary to 2SB1416 Unit: mm Collector-emitter voltage (Base open) Emitter-base voltage (Collector open)

2SB1418

Abstract: 2SB1418A 2SD2138 2SD2138A
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB1418, 2SB1418A Silicon PNP epitaxial planar type darlington Unit: mm 4.2±0.2 10.0±0.2 M Di ain sc te on na tin nc ue e/ d 1.0±0.2 • Absolute Maximum Ratings TC = 25°C

2SD2137A

Abstract: 2SB1417 2SB1417A 2SD2137
Contextual Info: Power Transistors 2SD2137, 2SD2137A Silicon NPN triple diffusion planar type For power amplification Complementary to 2SB1417 and 2SB1417A Unit: mm • Features ■ Absolute Maximum Ratings Parameter TC=25˚C Symbol Collector to 2SD2137 base voltage 2SD2137A

Contextual Info: 2SB1411 T O SH IB A TOSHIBA TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE 2 S B 1 411 Unit in mm SWITCHING APPLICATIONS HAM M ER DRIVE, PULSE MOTOR DRIVE APPLICATIONS 10 ±0.3 • High DC Current Gain : hpE = 1500 Min. (VCE = -3 V , Ic = - 1A) Low Saturation Voltage: V qe (sat)~ —1.5V(Max.) (Iç;= —1A)

2SB1412

Abstract: 2SB1326 2SB1386 2SD2118 T100 DPACK2
Contextual Info: 2SB1412 PNP Silicon Low Frequency Transistor Elektronische Bauelemente RoHS Compliant Product Features 1 Low VCE sat). D-Pack 2)Excellent DC current gain characteristics 3)Complements the 2SD2118 6.6 5.3 0.2 2.3 0.2 0.1 0.5 0.1 0.1 VCEO −20 V Emitter-base voltage

2SB1412

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-251/TO-252-2L Plastic-Encapsulate Transistors 2SB1412 TRANSISTOR PNP TO-251 TO-252-2L FEATURES Power amplifier applications 123 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value

2SB1418

Abstract: 2SB1418A 2SD2138 2SD2138A
Contextual Info: Power Transistors 2SB1418, 2SB1418A Silicon PNP epitaxial planar type Darlington Unit: mm 4.2±0.2 For power amplification Complementary to 2SD2138 and 2SD2138A Collector to base voltage 2SB1418 Collector to emitter voltage 2SB1418 18.0±0.5 Solder Dip Symbol

Contextual Info: Transistors Low Frequency Transistor 20V, 5A 2 SB 1386 / 2 SB 1412 / 2 SB 1326 / 2 SB 1436 • E x te rn a l dim ensions (Units: mm) •F e a tu re s 1) LOW VcE(sat). 2SB1412 2SB1386 VcE(sai) = -0 .3 5 V (Typ.) 2 ^2 6 .5 ± 0 .2 (|C/ | B = - 4 A / - 0 . 1 A )

Contextual Info: Power Transistors 2SB1416 2SB1416 Silicon PNP Epitaxial Planar Type Package Dimensions AF Power Amplifier Complementary Pair with 2SD2136 •Features • High DC current gain Iife and good linearity • Low collector-emitter saturation voltage (Vc e m )

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD2136 Silicon NPN triple diffusion planar type For power amplification Complementary to 2SB1416 Unit: mm • Absolute Maximum Ratings Ta = 25°C Parameter Symbol Rating Unit

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD2138, 2SD2138A Silicon NPN triple diffusion planar type darlington For power amplification Complementary to 2SB1418 and 2SB1418A 4.2±0.2 Unit: mm • Absolute Maximum Ratings TC = 25°C

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB1418, 2SB1418A Silicon PNP epitaxial planar type darlington Unit: mm 4.2±0.2 For power amplification Complementary to 2SD2138 and 2SD2138A 5.0±0.1 90˚ • High forward current transfer ratio hFE

2SB1414

Abstract: 2SD2134
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD2134 Silicon NPN epitaxial planar type For low-frequency driver , high power amplification Complementary to 2SB1414 Unit: mm 3.8±0.2 10.8±0.2 ue pl d in an c se ed lud pl

transistor 2sb1412

Abstract: 2SB1412
Contextual Info: 2SB1412 PNP TO-251/TO-252-2L Transistor TO-251 1.BASE 2.COLLECTOR 3.EMITTER 1 2 3 Features Power amplifier applications MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter TO-252-2L Value Units VCBO Collector-Base Voltage -30 V VCEO Collector-Emitter Voltage

2SB1412

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SB1412 PNP SILICON TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR DESCRIPTION The UTC 2SB1412 is an epitaxial planar type PNP silicon transistor. 1 TO-252 FEATURES *Excellent DC current gain characteristics *Low VCE SAT VCE(SAT)= -0.35V (Typ)

2SB1416

Abstract: 2SD2136
Contextual Info: Power Transistors 2SD2136 Silicon NPN triple diffusion planar type For power amplification Complementary to 2SB1416 Unit: mm • Absolute Maximum Ratings Ta = 25°C Parameter Symbol Rating Unit Collector-base voltage Emitter open VCBO 60 V Collector-emitter voltage (Base open)

2SB1418

Abstract: 2SB1418A 2SD2138 2SD2138A
Contextual Info: Power Transistors 2SB1418, 2SB1418A Silicon PNP epitaxial planar type Darlington Unit: mm 4.2±0.2 For power amplification Complementary to 2SD2138 and 2SD2138A Collector to base voltage 2SB1418 Collector to emitter voltage 2SB1418 18.0±0.5 Solder Dip Symbol

transistor b1412

Abstract: 2SB1412F5 b1412
Contextual Info: 2SB1412F5 Transistor, PNP Features Dimensions Units : mm • available in CPT F5 (SC-63) package • package marking: B1412-*Q, where ★ is hFE code and □ is lot number low collector saturation voltage, typically VCE(sat) = -0.35 V for lC/lB = -4 A/-0.1 A

2SB1418

Abstract: 2SB1418A 2SD2138 2SD2138A
Contextual Info: Power Transistors 2SB1418, 2SB1418A Silicon PNP epitaxial planar type Darlington For power amplification Complementary to 2SD2138 and 2SD2138A Unit: mm 5.0±0.1 10.0±0.2 ● High foward current transfer ratio hFE High-speed switching Allowing automatic insertion with radial taping

Contextual Info: UNISONICTECHNOLOGIESCO., LTD 2SB1412 PNP SILICON TRANSISTOR H I GH V OLT AGE SWI T CH I N G T RAN SI ST OR  DESCRI PT I ON The UTC 2SB1412 is an epitaxial planar type PNP silicon transistor.  FEAT U RES * Excellent DC current gain characteristics * Low VCE SAT

BJT BF 167

Abstract: 2SB1412
Contextual Info: SPICE PARAMETER 2SB1412 by ROHM TR Div. * 2SB1412 PNP BJT model * Date: 2006/11/14 .MODEL 2SB1412 PNP + IS=500.00E-15 + BF=167.27 + VAF=6.0750 + IKF=13.423 + ISE=500.00E-15 + NE=1.8133 + BR=101.30 + VAR=100 + IKR=.95905 + ISC=2.4533E-12 + NC=1.2497 + NK=.74369

2SB1412

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SB1412 PNP SILICON TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR „ DESCRIPTION The UTC 2SB1412 is an epitaxial planar type PNP silicon transistor. „ 1 FEATURES * Excellent DC current gain characteristics * Low VCE SAT VCE(SAT)= -0.35V (Typ)