2SA777 Search Results

2N3633

Abstract: TIP300 2N3609 2SA8140 MH0816 BCX53 Rohm 2sb631 hitachi 2N3566 2N3519 sk3025
Contextual Info: POWER SILICON PNP Item Number Part Number I C 5 10 >= 20 25 30 BCX53 MH0816 MH0818 MM4006 M0818 M0818 MM4031 ST4031 BCX53•6 ZTX552 BOW60 NS0204 2SA780AK BSV17·10 BSV17·10 BSV17·10 BSV17·6 BSV17·6 ~l,;X:';HU 35 40 45 50 2SA777 2SA777 B0418 2N6555 2SB1042M

2SA777

Abstract: 2SC15-0 2SA0777 2SC1509
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA0777 (2SA777) Silicon PNP epitaxial planar type For low-frequency driver amplification Complementary to 2SC1509 Unit: mm 4.9±0.2 0.7+0.3 –0.2 0.7±0.1 13.5±0.5 • High collector-emitter voltage (Base open) VCEO

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA0777 (2SA777) Silicon PNP epitaxial planar type For low-frequency driver amplification Complementary to 2SC1509 Unit: mm 4.9±0.2 8.6±0.2 5.9±0.2 • Features 0.7+0.3 –0.2 0.7±0.1

2n4889

Abstract: 2N4858 TEXAS 2N4418 2sa777 2n4891 2N4917 2SA8150 6ae diode 2N4417 2N6556
Contextual Info: POWER SILICON PNP Item Number Part Number I C 5 10 >= 20 25 30 BCX53 MH0816 MH0818 MM4006 M0818 M0818 MM4031 ST4031 BCX53•6 ZTX552 BOW60 NS0204 2SA780AK BSV17·10 BSV17·10 BSV17·10 BSV17·6 BSV17·6 ~l,;X:';HU 35 40 45 50 2SA777 2SA777 B0418 2N6555 2SB1042M

2SC1509

Abstract: 1271a TRANSISTOR 2sc1509 2SA777 2SA77 transistor 2sA777
Contextual Info: Transistor 2SC1509 Silicon NPN epitaxial planer type For low-frequency driver amplification Complementary to 2SA777 Unit: mm 5.9±0.2 4.9±0.2 High collector to emitter voltage VCEO. Optimum for the driver stage of a low-frequency and 25 to 30W output amplifier.

2SA777

Abstract: transistor 2sA777 2SA777 equivalent 2SC1509
Contextual Info: Transistor 2SA777 Silicon PNP epitaxial planer type For low-frequency driver amplification Complementary to 2SC1509 Unit: mm 5.9±0.2 4.9±0.2 High collector to emitter voltage VCEO. Optimum for the driver stage of a low-frequency and 25 to 30W output amplifier.

2SC1509

Abstract: 2SC15-0 2SA0777 2SA777
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC1509 Silicon NPN epitaxial planar type For low-frequency driver amplification Complementary to 2SA0777 (2SA777) Unit: mm 4.9±0.2 0.7+0.3 –0.2 0.7±0.1 13.5±0.5 • High collector-emitter voltage (Base open) VCEO

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA0777 (2SA777) Silicon PNP epitaxial planar type For low-frequency driver amplification Complementary to 2SC1509 Unit: mm 4.9±0.2 8.6±0.2 M Di ain sc te on na tin nc ue e/ d 5.9±0.2

Tip300

Abstract: 2SA8140 BCX53 Rohm 2SA8150 rohm 6AE 2SA1358Y MM4006 2SA1358-Y 2SA815 2sb631 hitachi
Contextual Info: POWER SILICON PNP Item Number Part Number I C 5 10 >= 20 25 30 BCX53 MH0816 MH0818 MM4006 M0818 M0818 MM4031 ST4031 BCX53•6 ZTX552 BOW60 NS0204 2SA780AK BSV17·10 BSV17·10 BSV17·10 BSV17·6 BSV17·6 ~l,;X:';HU 35 40 45 50 2SA777 2SA777 B0418 2N6555 2SB1042M

datasheet ic 4060

Abstract: 2SA777 ic 4060 2SA0777 2SC1509
Contextual Info: Transistor 2SA0777 2SA777 Silicon PNP epitaxial planer type For low-frequency driver amplification Complementary to 2SC1509 Unit: mm 5.9±0.2 4.9±0.2 • Absolute Maximum Ratings (Ta=25˚C) Parameter Symbol Ratings Unit Collector to base voltage VCBO –80

2SA0777

Abstract: 2SA777 2SC1509
Contextual Info: Transistor 2SA0777 2SA777 Silicon PNP epitaxial planer type For low-frequency driver amplification Complementary to 2SC1509 Unit: mm 5.9±0.2 4.9±0.2 High collector to emitter voltage VCEO. Optimum for the driver stage of a low-frequency and 25 to 30W output amplifier.

2SC1509

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC1509 Silicon NPN epitaxial planar type For low-frequency driver amplification Complementary to 2SA0777 (2SA777) Unit: mm 4.9±0.2 8.6±0.2 5.9±0.2 • Features 0.7+0.3 –0.2 0.7±0.1

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC1509 Silicon NPN epitaxial planar type For low-frequency driver amplification Complementary to 2SA0777 (2SA777) Unit: mm 4.9±0.2 8.6±0.2 5.9±0.2 • Features 0.7+0.3 –0.2 0.7±0.1

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC1509 Silicon NPN epitaxial planar type For low-frequency driver amplification Complementary to 2SA0777 (2SA777) Unit: mm 4.9±0.2 8.6±0.2 M Di ain sc te on na tin nc ue e/ d 5.9±0.2

2SA0777

Abstract: 2SA777 2SC1509
Contextual Info: Transistors 2SC1509 Silicon NPN epitaxial planar type For low-frequency driver amplification Complementary to 2SA0777 2SA777 Unit: mm 4.9±0.2 8.6±0.2 5.9±0.2 • Features 0.7+0.3 –0.2 0.7±0.1 13.5±0.5 • High collector-emitter voltage (Base open) VCEO

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA0777 (2SA777) Silicon PNP epitaxial planar type For low-frequency driver amplification Complementary to 2SC1509 Unit: mm 4.9±0.2 8.6±0.2 5.9±0.2 • Features 0.7+0.3 –0.2 0.7±0.1

Contextual Info: , Line. <$£.m.L-Con.du.ctoi Lpi TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 2SC1509 Silicon NPN epitaxial planer type For low-frequency driver amplification Unit: mm Complementary to 2SA777 4.9to.2

2SA0777

Abstract: 2SA777 2SC1509
Contextual Info: Transistors 2SA0777 2SA777 Silicon PNP epitaxial planar type For low-frequency driver amplification Complementary to 2SC1509 Unit: mm 4.9±0.2 8.6±0.2 5.9±0.2 • Features 0.7+0.3 –0.2 0.7±0.1 13.5±0.5 • High collector-emitter voltage (Base open) VCEO

2SC1509

Abstract: 2SA777 1271a 2SA0777 TRANSISTOR 2sc1509
Contextual Info: Transistor 2SC1509 Silicon NPN epitaxial planer type For low-frequency driver amplification Complementary to 2SA0777 2SA777 Unit: mm 5.9±0.2 4.9±0.2 High collector to emitter voltage VCEO. Optimum for the driver stage of a low-frequency and 25 to 30W output amplifier.

sn76131

Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Contextual Info: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157

2sc1589

Abstract: 2SC1502 2SC1583 2SC1575 2SC1508 2sc1589 equivalent 2SC1598 2SC1528 2SC1588 2SC1591
Contextual Info: Absolutes maximum ratings Ta=25ºC PartNumber VCBO VEBO Ic Pc (V) 2SC1501 (V) Electrical characteristics (Ta=25ºC) Tj DC Current Gain hFE fab/ft* VCE Ic (ºC) (MHz) (V) (mA) (mA) (mW) 300 5 100 2SC1503 50 3A 2SC1504 400 6 2SC1505 300 7 200 2SC1506 300 7 200

2sc5929

Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Contextual Info: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

2SA798

Abstract: 2SA733 2SA785 2SA778AK 2sc1567 2SA800 2SC1398 2SA720A 2SA798 g 2SA743
Contextual Info: 14 - m % T a = 2 5 cC , * E P Í Í T c = 2 5 ‘ ü m 2SA719 & tt fóT 2SA720 2SA720A fâT 2SA732 m M £ & VcBO VcEO (V) (V) Ici D C) Pc Pc* (W) (W) \M ld A / (A) 340 -10 -0.15 -0.6 -1. 5 -0.3 -0.03 85 340 -10 -0.15 -0.6 -1. 5 -0.3 -0.03 -10 40 200 -10

k2645

Abstract: k4005 U664B mosfet k4005 MB8719 transistor mosfet k4004 SN16880N stk5392 STR451 BC417
Contextual Info: 1 BHIAB Electronics Du som söker besvärliga IC & transistorer, börja Ditt sökande hos oss – vi har fler typer på lager än man rimlingen kan begära av ett företag Denna utgåva visar lagerartiklar men tyvärr saknas priser och viss information Men uppdatering sker kontinuerligt