ez 921
Abstract: 2SA733P 2SA1015Y 2SA537 PNP 2SA1015GR 2SA1015 2SA537B 2SA10150 2SA673A 2SA733
Contextual Info: CONTINENTAL DEVICE INDIA b3E D • 23033^4 DGDG1S3 b3b B K D I L - TO-92 PLASTIC PACKAGE TRANSISTO RS PNP Maximum Ratings Typ« No. 2SA537 (V) Un VCEO (V) Un VEBO (V) Un 60 50 5 VC80 Electrical Characteristics 'CBO (UA) VC8 (V)
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00d01s32sa5372sa537b2sas37c+8ez 9212sa733p2sa1015ypnp 2sa1015gr2sa10152sa101502sa673a2sa733
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2SA10150
Abstract: SO-160
Contextual Info: CONTINENTAL DEVICE INDIA b3E D • 23033^4 DGDG1S3 b3b B K D I L - TO-92 PLASTIC PACKAGE TRANSISTORS PNP Maximum Ratings Typ« No. 2SA537 VC80 (V) Un 60 VCEO VEBO (V) (V) Un Un 50 5 Electrical Characteristics 'CBO (UA) VC8
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2SC984
Abstract: 2SC708 hitachi 2sc984 2SC708A 2SA537 Hitachi transistor 2SA537A 2SC984 HITACHI 2SC458G PNP power transistors by hitachi
Contextual Info: HITACHI TRANSISTORS —FOR COMPLEMENTARY SYMMETRY OTL AMP.— The Hitachi 2SA537 and 2SA537A are silicon PNP epitaxial planar type transistors with high breakdown voltage and good linearity of DC current transfer ratio, specifically designed for use in the driver stage
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2sa5372sa537a2sc7082sc708a+760khz2sc984hitachi 2sc984hitachi transistor2sc984 hitachi2sc458gpnp power transistors by hitachi
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2SA733P
Abstract: 2N4289 PNP 2SA1015GR 2SA1015-Y 2SA1015GR 2SA1015Y 2SA537 2SA733Q BC251B transistor 2N4289
Contextual Info: TO-92 PLASTIC PACKAGE TRANSISTORS PNP Type No. 2SA537 VcBO (V) Min 60 V CEO V EBO (V) Min (V) Min 50 5 'CBO (uA) VCB Max 0.050 hpE @ (V) Mm Max 50 160 30 20 2SA5378 60 50 5 1.000 30 50 100 20 2SA537C 60 50 5 1.000 30 80 160 20 2SA673A 50 50 4 (Ta=25°C, U nless O th erw ise S pecified)
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2sa537o-92-42sa53782sa537c+122sa673abc212cil11152sa733p2n4289pnp 2sa1015gr2sa1015-y2sa1015gr2sa1015y2sa733qbc251btransistor 2n4289
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2SA1015Y
Abstract: 2SA733P 2N4289 2SA1015GR transistor 2N4289 2SA1015 2SA537 2SA537C 2SA673A 2SA733
Contextual Info: TO-92 PLASTIC PACKAGE TRANSISTORS PNP Type No. 2SA537 VcBO (V) Min 60 V CEO V EBO (V) Min (V) Min 50 5 'CBO (uA) VCB Max 0.050 hpE @ (V) Mm Max 50 160 30 20 2SA5378 60 50 5 1.000 30 50 100 20 2SA537C 60 50 5 1.000 30 80 160 20 2SA673A 50 50 4 (Ta=25°C, U nless O th erw ise S pecified)
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2sa537o-92-42sa53782sa537c+102sa673acil1115o-92-12sa1015y2sa733p2n42892sa1015grtransistor 2n42892sa10152sa733
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2SA101S
Abstract: 2SA1015 b-tt83
Contextual Info: TO-92 PLASTIC PACKAGE TRANSISTORS PNP Type No. 2SA537 ^CBO (V) Min 60 V CEO (V) Min 50 V EBO (V) Min 5 'CBO (uA) Max 0.050 hpE V C8 @ (V) Mm Max 50 160 30 20 2SA537B 60 50 5 1.000 30 50 100 20 2SA537C 60 50 5 1.000 30 80 160 20 2SA673A 50 50 4 (Ta=25°C, Unless O therw ise S pecified)
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AL102 ATES
Abstract: 2N2222A mps KR206 AD149 TIS58 TIS88 SFT353 2N2431 2N4265 BFY29
Contextual Info: SECOND BOOK OF TRAISKTIR EQUIVALENTS AIR SPIRTITOTER IT I.I.OMMI BERNARD BABANI publishing LTD The Grampians Shepherds Bush Road London W67NF England. Although every care Is taken with the preparation of this book, the publishers will not be responsible
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trans-611dt15212n2270bc107-182ks+16esc182kasesc182kbsesc1q8-183kseic183kbs8c183kcsbc109-184ksal102 ates2n2222a mpskr206ad149tis58tis88sft3532n24312n4265bfy29
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2n7588
Abstract: P3139 BC233A sprague 40d GEX36/7 C4274 s1766 C12712 TC236 GP149
Contextual Info: SPRAGUE THE M A R K O F R E L I A B I L I T Y SEMICONDUCTOR REPLACEMENT MANUAL K -5 0 0 TABLE OF CONTENTS Guidelines for Replacing Semiconductors. 1 Specifications, Small-Signal and Power Transistors.
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2SC696
Abstract: 2SC708A transistor 2sc696 2SC696A 2SC734 2SC853 2SC708 2SC815 2SC734 Y 2SC32
Contextual Info: 5 - - FOR U SE BY E L E C T R IC IA N S O V E R S E A S : •M-EiiOSWHE New Transistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will make full use of the data provided in this manual by referring to the Japanese-English
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2sc7342sc19592sc6962sc708a+7transistor 2sc6962sc696a2sc8532sc7082sc8152sc734 y2sc32
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2SC711
Abstract: 2SC756 2SC711A 2SC724 2SC747 2SC778 2SC744 2SC750 2SC772 2SC799
Contextual Info: Absolutes maximum ratings Ta=25ºC Electrical characteristics (Ta=25ºC) VCBO VEBO Ic Pc Tj DC Current Gain hFE fab/ft* Cob PartNumber VCE Ic (V) (V) (mA) (mW) (ºC) (MHz) (pF) (V) (mA) 2SC701 3 750 5W(Tc=25ºC) 200 8.6W 2SC702 40 4 750 175 50 10 100 (Tc=25ºC)
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2sc7012sc7022sc7032sc704+162sc7052sc7062sc707302sc708302sc708a2sc7092sc7112sc7562sc711a2sc7242sc7472sc7782sc7442sc7502sc7722sc799
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BC560AP
Abstract: 2sa720 semi KT313A LOW-POWER SILICON PNP BC212AP KT313B BC454C 2SA1115 tBc560b MM1614
Contextual Info: RF LOW-POWER SILICON PNP Item Number Part Number V BR CEO 5 10 BCY79A BCY79A A5T3504 2N4452 2N4452 2N4452 BCl77-6 BCl77-6 BCY79B BCY79B ~g~~~~111 15 20 BCl77B BC204B BC416A BC416B BC416AP BC416P BC251B BC261B ~g~~~~ 25 30 BCY79C BC416BP BCX79X BC251C BC251C
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bcy79aa5t35042n4452bcl77-6+11bcy79bbc560ap2sa720 semikt313alow-power silicon pnpbc212apkt313bbc454c2sa1115tbc560bmm1614
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aeg diode Si 61 L
Abstract: aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680
Contextual Info: Semiconductor Data Book Semiconductor Data Book Characteristics of approx. 10 000 Transistors, FETs, UJTs, Diodes, Rectifiers, Optical Semiconductors, Triacs and SCRs, Compiled by A. M. Ball Head of Physics, Teign School Newnes Technical Books Newnes Technical Books
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11ta0a12a025aa0290u0u55+16a0291a0292a0305a0306a0a56a0a59aeg diode si 61 laeg diodes d6sgs transistorsbc23bsiliconix u315mz306by126bcv59ac1282n3680
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Tr431
Abstract: 1N1525 cs1256hg BSF17 dd04 18DB6A B1274 transistor 1N34A MP LT236 SN76
Contextual Info: I RJ 1 international, rectifier IR R e p la c e m ent P a rt No. 25710 25T12 « S ? S H fcx S yty P a rt No. IR R e p la c e m ent Z1012 Z1014 21016 Z1018 21020 AA138 AA140 AA142 AA2 AA20 IN34A IN34A JN34A TR-08 6F20D ZI022 Z1006 21008 7*0*0 21012 AA200
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25t12z1012z1014z1018+16aa138aa140aa142aa200aa21qaa300tr4311n1525cs1256hgbsf17dd0418db6ab1274 transistor1n34a mplt236sn76
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Photoresistor
Abstract: Photoresistor 5 mm Silicon Sensors, Inc 2SA537A Photoresistor 55 cds photoresistor cds light sensors
Contextual Info: SILICON SENSORS TTTT INC b2E D SILICON SENSORS, INC. Highway 18 East Dodgevllle, Wisconsin 53533 0253^22 DGD0404 S2fi B IS LS PHOTOPOTENTIOMETER ENGINEERING DATA Telephone: 608 935-2707 n • Photopotentiometer TECHNICAL BULLETIN ,!?„ Figure 1 DESIGN As it’s name implies, Photopo
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dgd04042sa537a10ms210ks2+710mf2photoresistorphotoresistor 5 mmsilicon sensors, incphotoresistor 55cds photoresistorcds light sensors
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hep 154 silicon diode
Abstract: zy 406 transistor motorola HEP 801 hep 154 diode hep R1751 triac zd 607 2sb337 RS5743.3 F82Z hep 230 pnp
Contextual Info: SEMICONDUCTOR This guide has been prepared by the Motorola HEP technical staff to provide a cross-reference for the Hobbyist, Experimenter, and Profes sional service technician. The information contained herein is based on an analysis of the published specifications of each device listed. This
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my110bz0206z0208z0210+16z0211z0212z0214z0215z0217z0219hep 154 silicon diodezy 406 transistormotorola hep 801hep 154 diodehep r1751triac zd 6072sb337rs5743.3f82zhep 230 pnp
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Transistor 2SA 2SB 2SC 2SD
Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59
Contextual Info: cD/ transistor 2 0-u datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-01-9 Dieses Buch ist hinterlegt und urheberrechtlich geschutzt. Alle
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transistor 2sa 2sb 2sc 2sd2sk5962sc9062sa1281+6bup 3130c3885a2sd1032sa137934d 937 086bfq59
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2sb504
Abstract: 2t306 2N5983 2SD588 2sd73 2sc497 HD6801V
Contextual Info: /T 1 4 R C“ 4 j r\ & M- -_ ~- i l^ it 4 4 ~\ 3 — 4 & 3 * 4 i3 !. 3: " & -\ vi- W- 4 3: - x 1 — v!r 'Hv j 4 n 3 fr 4 j •& $ 3t * 3 r^-. r+ *; 5+ x i •3I .<> iS I R k Q PS Q fit S r\ tiSE H-, 4 4 ~9> x-v r-i 5+ ' s, (vs •u- lit ZSZ\'1* n 3 St
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2sb504
Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
Contextual Info: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle
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2sb504kpl 30092sb502bly34+6germaniumbf316absx122sd716, 2sb686 35w amplifiersbf197acy52
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STk442-130
Abstract: M56730ASP PAC011A PAC010A UPC2581 PAL005A stk413-020a upc2581v ecg semiconductors master replacement guide STRS5717
Contextual Info: C52_pg_337~347 8/16/07 11:47 AM Page 337 Semiconductors/ Components SEMICONDUCTORS MCM has an extensive selection of SMD Surface Mount Devices which are denoted on the following page with an *(asterisk)! COUNT ON MCM TO ALWAYS PROVIDE. section 16 Semiconductors/Components
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100-upstk442-130m56730asppac011a+7pac010aupc2581pal005astk413-020aupc2581vecg semiconductors master replacement guidestrs5717
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free transistor equivalent book 2sc
Abstract: HA13108 HL7801G HL7801E free thyristor equivalent book 2sc 2SC1707 HIGH POWER HIGH FREQUENCY CVD DIAMOND CHIP RESISTORS footprint HD44237 semi catalog pic micro weighing scale code example
Contextual Info: RELIABILITY 1. 1.1 R E L IA B IL IT Y R E L IA B IL IT Y C H A R A C T E R IS T IC S F O R S E M IC O N D U C T O R D E V IC E S Hitachi semiconductor devices are designed, manufactured and inspected so as to achieve a high level of reliability. Accordingly, system reliability can be improved by com
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free transistor equivalent book 2scha13108hl7801ghl7801e+6free thyristor equivalent book 2sc2sc1707high power high frequency cvd diamond chip resistors footprinthd44237semi catalogpic micro weighing scale code example
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2SB415
Abstract: 2SB 710 2sc1061 2sd524 2sb504 HD68P01 2sb507 2sa762 2sc827 2SC1362
Contextual Info: V W Ki * 91 ^ # b h 7 >->" X ? i, t ^ X M X V M W X M £ (E I A J i: 2 S W Z x R m z t i S , x t iz J :'), ? 4000H£< * ^ t i X t 4 ', ^ i t . : w ° n l l ±, Z iih J M I1 L -C A J t t , g 4 - ? 4 M # c o ( , c o T ' & , I W H H c o f ^ 6 i> w 1, ^ & >) b ') £ i ~
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2SA572
Abstract: 2SC1006 2SC696 2SC708 2SC984 2SC708A 2SC734 equivalent 2SC680 2SA518 datasheet 2sa564
Contextual Info: Electrical characteristics Ta=25ºC Tj DC Current Gain hFE fab/ft* Cob VCE Ic (ºC) (MHz) (pF) (V) (mA) 175 70 -1 -10 200* 10 40125 -1 -120 >50 8 240 30175 -2 -150 80* 22 300 30175 -2 -150 80* 22 300 40125 -2 -50 100* 20 240 85 300* 1 85 250* 1 85 200* 1
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2sa5012sa5022sa5032sa504+162sa5052sa5062sa5072sa5082sa5092sc8282sa5722sc10062sc6962sc7082sc9842sc708a2sc734 equivalent2sc6802sa518datasheet 2sa564
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2N2222A 338
Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
Contextual Info: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK
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2cy172cy182cy192cy20+122cy21500ma2n2222a 338tfk 9492n1167halbleiter index transistorad161bsy19al103ac128tfk 404tfk 931
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T35W
Abstract: transistor kt 606A 65e9 transistor sr 6863 D 2SC965 CS9011 sr1k diode KT850 TRANSISTOR st25a transistor 130001 8d
Contextual Info: NEW PRODUCTS BULLETIN SINGLE-ENDED MOLDED BRIDGES Fig. 1 International Rectifier expands its quality line of highly reliable molded \ bridges with the new 10DB series of 1 amp full-wave silicon bridge rectifiers. The single-ended, in-line configuration is suitable for PC board applications,
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10db2p10db4p10db6p180b6a+10t35wtransistor kt 606a65e9 transistorsr 6863 d2sc965cs9011sr1k diodekt850transistor st25atransistor 130001 8d
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