2SA2088 Search Results

2V1000

Contextual Info: Medium power transistor 60V, 0.5A 2SA2088 Features 1) High speed switching. (Tf : Typ. : 60ns at IC = 500mA) 2) Low saturation voltage, typically (Typ. : 150mV at IC = 100mA, IB = 10mA) 3) Strong discharge power for inductive load and capacitance load.

2SA20

Abstract: 2SA2088 2SC5876 T106
Contextual Info: 2SA2088 Transistors Medium power transistor −60V, −0.5A 2SA2088 zExternal dimensions (Unit : mm) UMT3 2.0 0.9 0.2 0.3 0.7 (1) 0.65 0.65 1.3 0.15 0.1Min. (2) 2.1 (3) 1.25 zFeatures 1) High speed switching. (Tf : Typ. : 60ns at IC = −500mA) 2) Low saturation voltage, typically

Contextual Info: AEC-Q101 Qualified Medium power transistor 60V, 0.5A 2SA2088FRA Dimensions (Unit : mm) Features 1) High speed switching. (Tf : Typ. : 60ns at IC = 500mA) 2) Low saturation voltage, typically (Typ. : 150mV at IC = 100mA, IB = 10mA)

2SA2088

Abstract: 2SC5876 T106
Contextual Info: 2SA2088 Transistors Medium power transistor −60V, −0.5A 2SA2088 2.0 1.3 0.9 (1) (2) 0.65 0.65 (3) 0.3 UMT3 (SC-70) <SOT-323> 0.7 !External dimensions (Unit : mm) 1.25 0.2 2.1 0.15 !Features 1) High speed switching. (Tf : Typ. : 60ns at IC = −500mA)

NE 555 datasheet

Abstract: 2SA2088 Q2SA2088 pdf 555
Contextual Info: SPICE PARAMETER 2SA2088 by ROHM TR Div. * 2SA2088 PNP BJT model * Date: 2006/12/15 .MODEL 2SA2088 PNP + IS=65.000E-15 + BF=249.50 + VAF=100 + IKF=.69106 + ISE=65.001E-15 + NE=1.4594 + BR=10.162 + VAR=100 + IKR=11.394 + ISC=5.0270E-12 + NC=1.3515 + NK=.79748

2SA2088

Abstract: 2SC5876 T106
Contextual Info: 2SA2088 Transistors Medium power transistor −60V, −0.5A 2SA2088 2.0 1.3 0.9 (1) (2) 0.65 0.65 (3) 0.3 UMT3 (SC-70) <SOT-323> 0.7 !External dimensions (Unit : mm) 1.25 0.2 2.1 0.15 !Features 1) High speed switching. (Tf : Typ. : 60ns at IC = −500mA)

Contextual Info: Medium power transistor 60V, 0.5A 2SA2088 Dimensions (Unit : mm) Features 1) High speed switching. (Tf : Typ. : 60ns at IC = 500mA) 2) Low saturation voltage, typically (Typ. : 150mV at IC = 100mA, IB = 10mA) 3) Strong discharge power for inductive load and capacitance load.

Contextual Info: Medium power transistor 60V, 0.5A 2SA2088 Dimensions (Unit : mm) Features 1) High speed switching. (Tf : Typ. : 60ns at IC = 500mA) 2) Low saturation voltage, typically (Typ. : 150mV at IC = 100mA, IB = 10mA) 3) Strong discharge power for inductive load and capacitance load.

2SA2088

Abstract: 2SC5876 T106
Contextual Info: Medium power transistor 60V, 0.5A 2SC5876 2.0 1.3 0.9 (1) (2) (3) 0.3 0.65 0.65 UMT3 0.7 Dimensions (Unit : mm) Features 1) High speed switching. (Tf : Typ. : 80ns at IC = 500mA) 2) Low saturation voltage, typically (Typ. : 150mV at IC = 100mA, IB = 10mA)

Contextual Info: Medium power transistor 60V, 0.5A AEC-Q101 Qualified 2SC5876FRA 2.0 1.3 0.9 (1) (2) (3) 0.3 0.65 0.65 UMT3 0.7 Dimensions (Unit : mm) Features 1) High speed switching. (Tf : Typ. : 80ns at IC = 500mA) 2) Low saturation voltage, typically (Typ. : 150mV at IC = 100mA, IB = 10mA)

Contextual Info: Medium power transistor 60V, 0.5A 2SC5876 2.0 1.3 0.9 (1) (2) (3) 0.3 0.65 0.65 UMT3 0.7 Dimensions (Unit : mm) Features 1) High speed switching. (Tf : Typ. : 80ns at IC = 500mA) 2) Low saturation voltage, typically (Typ. : 150mV at IC = 100mA, IB = 10mA)

STF12A80

Abstract: BSTC1026 BSTD1046 BTB04-600SAP STF6A80 BSTD1040 TO510DH BSTC1040 TO812NJ BTB15-700B
Contextual Info: Cross Reference For the most up to date cross reference, go to the product portal: Manufacturer type number Manufacturer Philips type number Page number Manufacturer type number Manufacturer

2SA2160

Abstract: 2SA2149 2SC6005 RQW200 rdx100n45 RQA200N03 rqw200n03 RLA130N03 rdx*100n45 2sc6027
Contextual Info: 2005 Transistor New Products Ver.1 MOS FET Series Low VCE sat Miniature Digital Transistor Series Low VCE(sat) Transistor Series Endured Discharge Voltage/ High Speed Switching/ Low Noise Transistor Series Muting Transistor Series MOS FET TUMT/TSMT Series

2SA2088

Abstract: 2SC5876 T106
Contextual Info: 2SC5876 Transistor Medium power transistor 60V, 0.5A 2SC5876 2.0 1.3 0.9 (1) (2) (3) 0.3 0.65 0.65 UMT3 0.7 !External dimensions (Units : mm) !Features 1) High speed switching. (Tf : Typ. : 80ns at IC = 500mA) 2) Low saturation voltage, typically (Typ. : 150mV at IC = 100mA, IB = 10mA)

Contextual Info: Medium power transistor 60V, 0.5A 2SC5876 2.0 1.3 0.9 (1) 0.3 (3) (2) UMT3 0.65 0.65 Dimensions (Unit : mm) 0.7 Features 1) High speed switching. (Tf : Typ. : 80ns at IC = 500mA) 2) Low saturation voltage, typically (Typ. : 150mV at IC = 100mA, IB = 10mA)

pioneer mosfet audio amp ic

Abstract: 12V ENERGY LIGHT CIRCUIT DIAGRAM vmn3 package DTC143T datasheet TRANSISTOR SMD catalog Equivalent transistors for UMD2N smd ya transistor 2SD2211 2SA1576UB 2SC6114
Contextual Info: Product Catalog Bipolar Transistors Digital Transistors Discrete Semiconductors 2008-Feb. www.rohm.com ROHM Bipolar Transistors / Digital Transistors Bipolar Transistors are currently recognized as essential key devices for the electronics industry. ROHM as a leading company is supplying a great

2SC6144

Abstract: IMD16A potential divider 2SA1576UB DTD513Z MP6T3 2SCR514 2SA1514K equivalent 2SCR543 2SC6114
Contextual Info: 2010 Product Catalog Discrete Semiconductors Bipolar Transistors Digital Transistors Bipolar Transistors ROHM bipolar transistors were developed to be energy efficient, highly reliable, and compact. A wide range of products are offered, from small-signal and low profile models to high power products.

2sc5922

Abstract: 2SC5734 2SC5917 2SC5989 2SA2054 2sc5919 2SC5987 2SC5734K 2SC5918 2SC5982
Contextual Info: -Transistors ◆MOS FET Series ◆Low Vce sat Super-mini Transistors Series ◆Strong Discharge Voltage/ High Speed Switching Transistors Series ◆Muting Transistors Series MOS FET Series Power MOS FET Series Series Features Low RDs(on) High ESD capability

S78DM12Q

Abstract: Sf20d400 s78dM12 BA5810 sn7905 SF5A400 transistor AE code PNP smd sf20a300 SF10A300 SF10D300
Contextual Info: 上 海 w 众 w 韩 .c kb 授 -s 权 h. 代 co 理 m w 上 海 w 众 w 韩 .c kb 授 -s 权 h. 代 co 理 m w 上 海 w 众 w 韩 .c kb 授 -s 权 h. 代 co 理 m w Power Solution w 上 海 w 众 w 韩 .c kb 授 -s 权 h. 代 co 理 m LED Solution LED TV Power

2SA1576UB

Abstract: 2SC1740s equivalent transistor digital 47k 22k PNP NPN 2sd198 2SC6114 2sc401 2SB1240 2SB1694 2SC5865 2sD2703
Contextual Info: 2009 Product Catalog Discrete Semiconductors Bipolar Transistors Digital Transistors Bipolar Transistors ROHM bipolar transistors were developed to be energy efficient, highly reliable, and compact. A wide range of products are offered, from small-signal an low profile models to high power products.

2SC5876

Abstract: 2SA20 2SA2088 T106
Contextual Info: 2SC5876 Transistor Medium power transistor 60V, 0.5A 2SC5876 2.0 1.3 0.9 (1) (2) (3) 0.3 0.65 0.65 UMT3 0.7 zExternal dimensions (Unit : mm) zFeatures 1) High speed switching. (Tf : Typ. : 80ns at IC = 500mA) 2) Low saturation voltage, typically (Typ. : 150mV at IC = 100mA, IB = 10mA)