2sA1516 transistor
Abstract: 2SA1516 transistor 2sc3907 2SC3907
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1516 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -180V(Min) ·Good Linearity of hFE ·Complement to Type 2SC3907 APPLICATIONS ·Power amplifier applications
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2sa1516-180v2sc3907-50ma+22sa1516 transistortransistor 2sc3907
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2SA1516
Abstract: 2SC3907
Contextual Info: JMnic Product Specification 2SA1516 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-3P I package ・Complement to type 2SC3907 ・High collector voltage APPLICATIONS ・Power amplifier applications ・Recommend for 80W high fidelity audio frequency amplifier output stage
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2sa15162sc3907-180v |
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2sa1516
Contextual Info: SILICON PNP TRIPLE DIFFUSED TYPE 2SA1516 POWER AMPLIFIER APPLICATIONS. Unit in mm FEATURES: 15.9 M A X . High Collector Voltage : VcEO=-180V Min. 03.2±O.2 / . Complementary to 2SC3907 & . Recommend for 80W High Fiderity Audio Frequency Amplifier Output Stage.
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2sa1516-180v2sc3907 |
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2SC3907
Abstract: 2SA1516
Contextual Info: SavantIC Semiconductor Product Specification 2SC3907 Silicon NPN Power Transistors DESCRIPTION •With TO-3P I package ·Complement to type 2SA1516 APPLICATIONS ·Audio and general purpose power amplifier applications ·Recommend for 80W high fidelity audio
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2sc39072sa1516 |
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2SA1516
Abstract: 2SC3907 2sa151
Contextual Info: SavantIC Semiconductor Product Specification 2SA1516 Silicon PNP Power Transistors DESCRIPTION •With TO-3P I package ·Complement to type 2SC3907 ·High collector voltage APPLICATIONS ·Power amplifier applications ·Recommend for 80W high fidelity audio
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2sa15162sc3907-180v2sa151 |
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2sa1516
Abstract: 2SC3907
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1516 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -180V(Min) ·Good Linearity of hFE ·Complement to Type 2SC3907 APPLICATIONS ·Power amplifier applications
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2sa1516-180v2sc3907 |
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2SC3907
Abstract: 2sa1516
Contextual Info: 2SC3907 SILICON NPN TRIPLE DIFFUSED TYPE POWER AMPLIFIER APPLICATIONS. Unit FEATURES: 1 & 9 IIA I . High Collector Breakdown Voltage : VcEO”180V Min. In a m 0 3 .g ± C L 2 JL . Complementary to 2SA1516 w . Recommend for 80W High Fiderity Audio Frequency
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2sc39072sa1516ta-25tc-25 |
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2SC3907
Abstract: 2SA1516
Contextual Info: Inchange Semiconductor Product Specification 2SC3907 Silicon NPN Power Transistors • DESCRIPTION ·With TO-3P I package ·Complement to type 2SA1516 APPLICATIONS ·Audio and general purpose power amplifier applications ·Recommend for 80W high fidelity audio
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2sc39072sa1516 |
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2SA1516
Abstract: 251C 2SC3907
Contextual Info: AOK AOK Semiconductor Product Specification 2SA1516 S ilic o n PNP P o w e r T ra n s is to rs DESCRIPTION • With TO -3P l package • Complement to type 2SC3907 • High collector voltage APPLICATIONS • Power am plifier applications • Recommend for 80W high fidelity audio
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2sa15162sc3907251c |
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ic 748
Abstract: 2SC3907
Contextual Info: MCC omponents 21201 Itasca Street Chatsworth !"# $ % !"# 2SC3907 Features • • • NPN Silicon Power Transistors With TO-3P I package Complementary to 2SA1516 Power amplifier applications Maximum Ratings
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2sc39072sa1516ic 748 |
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ic 748
Abstract: 2sa1516
Contextual Info: MCC omponents 21201 Itasca Street Chatsworth !"# $ % !"# 2SA1516 Features • • PNP Silicon Power Transistors With TO-3P I package Power amplifier applications Maximum Ratings Symbol V CEO V CBO
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2sc3907 transistor
Abstract: 2SC3907 2SA1516 SC-65
Contextual Info: 2SC3907 NPN PLANAR SILICON TRANSISTOR AUDIO POWER AMPLIFIER DC TO DC CONVERTER SC-65 ! ! ! High Current Capability High Power Dissipation Complementary to 2SA1516 ABSOLUTE MAXIMUM RATING TA=25℃ ℃ Characteristic Collector-Base Voltage Collector-Emitter Voltage
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2sc3907sc-652sa15162sc3907 transistor |
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2SC3907
Abstract: 2sa1516
Contextual Info: SILICON NPN TRIPLE DIFFUSED TYPE 2SC3907 POWER AMPLIFIER APPLICATIONS. Unit in mm FEATURES: 159MAX 0Z .2 ± O . Z . High Collector Breakdown Voltage : Vcj?o=180V Min. . Complementary to 2SA1516 . Recommend for BOW High Fiderity Audio Frequency Amplifier Output Stage.
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2sc3907159max2sa1516 |
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Transistor 2SA 2SB 2SC 2SD
Abstract: S-AU27M S2000A inverter P4005 S-AV21H S-AU27 3182N 2sb 834 transistor Transistor 2SC4288A Drive IC 2SC3346
Contextual Info: TO-126 IS , PO W ER MOLD PACKAGE TRANSISTOR SELECTION GUIDE • TO-126 (IS) ▲ PW MOLD Darlington A PW MOLD • POWER MOLD TO-126 (IS) Darlington TO-126 OS) H A T0-220AB, TO-220 (IS) PACKAGE TRANSISTOR S E L ECTION G UIDE r— " ~ '''- Y C E O ( V ) lc (A)
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o-126t0-220abo-2202sc4544+132sc44482sc36122bc4201transistor 2sa 2sb 2sc 2sds-au27ms2000a inverterp4005s-av21hs-au273182n2sb 834 transistortransistor 2sc4288adrive ic 2sc3346
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2sc3855
Abstract: 2SC3858 2SC3898 2sa1494 2SC3859 2SA1491 2SA1492 2SA1493 2SA1495 2SC3856
Contextual Info: - m fT Vc e V (MHz) ton tf (Ms) m tstg (m s ) (m s ) ft Cob (max) (pF) tt ( 1 3 = 2 5 * 0 Cre (max) (pF) il [*EPfätypfiI3 Œ g □ y-fv 14 ;lJj Ê ft m # mm mm m % M £ -12 -0.5 0.3* 0. 2* 0.9* 2SC3855 (MT100) BCE 2SA1491 -12 -0.5 0.6* 0.2* 0.9* 2SC3856
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2sc3855mt1002sa14912sc3856+92sa14922sc3857mt2002sa14932sc38582sc38982sa14942sc38592sa1495
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STK411-230E
Abstract: STK411-220E stk442-130 PAL005A UPC2581V FN1016 STRG6153 RSN313H25 STK407-070B MCZ3001D
Contextual Info: R Serving The Electronic Industry Since 1982 Ordering at Dalbani is so easy Go to : www.dalbani.com Search & check stock Busque y revise nuestro inventario A Search Enter your Item number and click GO Entre el numero del producto y haga clicsobre GO The system will take you straight to the Item that you are looking for
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stvdst-01cat22stk411-230estk411-220e+8stk442-130pal005aupc2581vfn1016strg6153rsn313h25stk407-070bmcz3001d
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2sC5200, 2SA1943
Abstract: 2SA1941 equivalent 2SC5353 equivalent 2sc5198 equivalent amplifier circuit using 2sa1943 and 2sc5200 2SC2383 equivalent tpcp8l01 2SA1962 equivalent 2SC4793 2sa1837 2sA1013 equivalent
Contextual Info: 2011-4 PRODUCT GUIDE Power Transistors SEMICONDUCTOR h t t p : / / w w w . s e m i c o n . t o s h i b a . c o . j p / e n g Power Transistors for Audio Power Amplifiers Using a minute pattern and a high-density MET design, Toshiba has achieved high levels of current
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bce0016d2sc5200, 2sa19432sa1941 equivalent2sc5353 equivalent+72sc5198 equivalentamplifier circuit using 2sa1943 and 2sc52002sc2383 equivalenttpcp8l012sa1962 equivalent2sc4793 2sa18372sa1013 equivalent
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15J102
Abstract: Transistor 2SC4288A Transistor 2SA 2SB 2SC 2SD Drive IC 2SC3346 2sa 102 transistor transistor 2SA 101 50J301 02SC5030 T15J103 Driver IC 2SC3346
Contextual Info: L -S T M T 0 -9 2 M 0 D T Y P E POWER TRANSISTOR V ’CEO \(V> 10 30 40 50 60 80 100 120 180 2SA949U50VI 2AC2229(150V) 0.05 200 250 2SA1321 2SC3334 300 2SC5122I400V) 2SA1145U50V) 2SC2705(!50V) 2SC2230(160V) 0.1 2SC2482 2SC2230A 2SA817A 0.4 2SC1627A 2SA1811
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2sa949u50vi2ac22292sa1145u50v2sc2705+162sc22302sa817a2sc1627a2sa18112sc47072sa96515j102transistor 2sc4288atransistor 2sa 2sb 2sc 2sddrive ic 2sc33462sa 102 transistortransistor 2sa 10150j30102sc5030t15j103driver ic 2sc3346
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2sC5200, 2SA1943, 2sc5198
Abstract: GTI5Q101 2sc5039 2SC4532 2SD2088 2SC3303 2sC5200, 2SA1943 2SA1803 2sc4408 GT10G102
Contextual Info: • ALPHNUMERICAL INDEX Type No. Page Type No. Page Type No. Page 2SA817A 121 2SA1387 202 2SA1892 278 2SA940 123 2SA1388 206 2SA1893 280 2SA949 125 2SA1408 209 2SA1899 281 2SA965 127 2SA1425 212 2SA1905 282 2SA966 129 2SA1426 214 2SA1923 284 2SA1012 131 2SA1428
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2sa817a2sa9402sa9492sa965+162sa9662sa10122sa10132sa10202sa11452sa11602sc5200, 2sa1943, 2sc5198gti5q1012sc50392sc45322sd20882sc33032sc5200, 2sa19432sa18032sc4408gt10g102
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2SC3907 toshiba
Abstract: 2SA1516 2SA1516 toshiba TOSHIBA 2SA1516 2SC3907
Contextual Info: SILICON PNP TRIPLE DIFFUSED TYPE 2 SA 1516 PO W ER AMPLIFIER APPLICATIONS. U n it in mm • H igh Collector Voltage : V cEO = —180V Min. • Complementary to 2SC3907 • Recommend for 80W High Fiderity Audio Frequency Amplifier O utput Stage. M A X IM U M RATINGS (Ta = 25°C)
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--180v2sc39072-16c1a2sa1516+32sc3907 toshiba2sa1516 toshibatoshiba 2sa1516
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en220
Abstract: DTA143ES 2SA1441 1658 NEC 2sa 1659 RT1P431S 2sa1265n 2SB1188 2SB1371 2SA1659
Contextual Info: - m « Type No. 2SA 1648 . 2SA 1649 " 2SA 1650 , 2SA 165! 2SA 1652 2SA 1653 2SA 1654 -• 2SA 1655 2SA 1656 , 2SA 1657 2SA 1658 2SA 1659 2SA 1660 2SA 1661 2SA 1662 2SA 1663 2SA 1664 2SA 1665 2SA 1666 2SA 1667 • 2SA 1668 2SA 1669 2SA 1670 •" 2SA 1671 ^
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2sb12032sa12442sb9332sb1204+162sb9522sb9452sb12942sb10182sb9462sa145zen220dta143es2sa14411658 nec2sa 1659rt1p431s2sa1265n2sb11882sb13712sa1659
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2SA1441
Abstract: 2sb1340 2SA1712 2SA1763 2SB1020 2SB921 2SA1516 1729H 2SA1156 2SA1639
Contextual Info: 39 tt 2SA 2 SA 2 SA 2S A 2S A 2S A 2SA 2 SA 2SA 2SA 2SA 2SA 2 SA 2S A 2S A 2S A 2SA 2 SA 2SA 2SA 2SA 2SA 2 SA 2S A 2SA 2S A 2S A 2S A 2S A 2SA 2SA 2SA 2SA 1715 1716 1717 171 8 1719 1 720 1721 1722 1723 1725 1 726 1727 172 8 1729 1730 1731 1732 1733 1734 1735
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2sb12272sa17182sb11942sb1340+132sb12282sb10202sa17192sb11952sb13442sa14412sa17122sa17632sb9212sa15161729h2sa11562sa1639
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smd transistor h2a
Abstract: SMD TRANSISTOR H2A NPN transistor smd H2A 2sa1943 amplifier circuit diagram TPCP8L01 2sC5200, 2SA1943 H2A transistor SMD 2sc5200 power amplifiers diagram MARKING SMD PNP TRANSISTOR h2a SMD H2A
Contextual Info: 2008-9 PRODUCT GUIDE Power Transistors s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g Using a minute pattern and a high-density MET design, Toshiba has achieved high levels of current efficiency. Package type can be selected to yield collector power output
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bce0016ce-28831bce0016dsmd transistor h2a+9smd transistor h2a npntransistor smd h2a2sa1943 amplifier circuit diagramtpcp8l012sc5200, 2sa1943h2a transistor smd2sc5200 power amplifiers diagrammarking smd pnp transistor h2asmd h2a
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2SC144
Abstract: 2SD466 2sc5266
Contextual Info: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *
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t258-omifax062sc1442sd466+12sc5266
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