2SA151 Search Results

2SA1513

Contextual Info: SavantIC Semiconductor Product Specification 2SA1513 Silicon PNP Power Transistors DESCRIPTION •With TO-3PML package ·High current capability ·Low collector saturation voltage APPLICATIONS ·For high speed and high power switching applications PINNING PIN

DC 5V to DC 100V CIRCUIT DIAGRAM

Abstract: 2SA1514K 2SC3906K T148 marking y5
Contextual Info: FMY5 Transistor General purpose dual transistors FMY5 zExternal dimensions (Unit : mm) (4) 2.9 1.1 1.9 0.95 0.95 (1) (2) (4) (3) 0.8 (5) (5) 0.3 0.15 0.3Min. zCircuit diagram (3) SMT5 1.6 2.8 zFeatures 1) Both the 2SA1514K and 2SC3906K chips in an SMT package.

Contextual Info: Ordering num ber.EN 2 1 0 5 A | 2SA1511/2S03901 J PNP/ N P N Epitaxial Planar SiliconTransistors SA \ YO Switching Applications with Bias Resistance Applications . Switching circuits, inverter circuits, interface circuits, driver circuits Features . On-chip bias resistance: Rl=4.7k£l

Contextual Info: SANYO S E M I C ON DU C T OR CORP E2E D 7 ‘n 7 0 7 b 2SA1510, 2SC3900 000733b S I T -3 7 - f3 " T - 3 5 -// P N P /N P N Epitaxial Planar Silicon Transistors 2018A Switching Applications with Bias Resistance R1=4.7ki2 2104A Applications . Switching circuits, inverter circuits, interface circuits, driver circuits

2sA1516 transistor

Abstract: 2SA1516 transistor 2sc3907 2SC3907
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1516 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -180V(Min) ·Good Linearity of hFE ·Complement to Type 2SC3907 APPLICATIONS ·Power amplifier applications

2SB1237

Abstract: TRansistor 2SB1237 data 2SA1515S 2SD1858 SC-72
Contextual Info: Medium Power Transistor 32V,1A 2SA1515S / 2SB1237 Dimensions (Unit : mm) 2.5 + − 0.2 6.8 + − 0.2 0.9 3Min. 3+ − 0.2 (15Min.) Structure Epitaxial planar type PNP silicon transistor 2SB1237 2+ − 0.2 0.45 +0.15 −0.05 2.5 +0.4 −0.1

2SB1237

Abstract: 2SA1515S 2SB1132 2SD1664 2SD1858 SC-72 T100 2SB1132-QR
Contextual Info: Medium Power Transistor 32V,1A 2SB1132 / 2SA1515S / 2SB1237 2SB1132 2SA1515S 4+ − 0.2 1.5 +0.2 −0.1 (1) 0.4 + − 0.1 1.5 + − 0.1 (2) (3) 0.4 +0.1 −0.05 0.5 + − 0.1 0.4 0.1 1.5 + − 0.1 3.0 + − 0.2 5 Abbreviated symbol: BA (2) 14.5 +

2SC3912

Abstract: 2SA1518 ITR03839 ITR03840
Contextual Info: 注文コード No. N 2 1 5 9 A 2SA1518/2SC3912 No. N2159A 20800 半導体ニューズ No.2159 とさしかえてください。 2SA1518 / 2SC3912 PNP / NPN エピタキシァルプレーナ形シリコントランジスタ バイアス抵抗 R1=10kΩ,R2=10kΩ 内蔵

TT106

Abstract: 2SC2389S 2SC4102 2SA1038S 2SA1514K 2SA1579 2SC3906K T106 T146 MARKING CODE 21 SOT-346
Contextual Info: 2SC4102 / 2SC3906K / 2SC2389S Transistors High-voltage Amplifier Transistor 120V, 50mA 2SC4102 / 2SC3906K / 2SC2389S !External dimensions (Units : mm) !Features 1) High breakdown voltage. (BVCEO = 120V) 2) Complements the 2SA1579 / 2SA1514K / 2SA1038S. 2.0

Contextual Info: FMS3/FMS4/IMT4 FMW3 / FMW4 / IMX8 Transistors I General Purpose Dual Transistors FMS3 / FMS4 / IMT4 •F eatures •A bsolu te maximum ratings {TasB25‘0 1 ) Two 2SA1514K chips are housed in an SM T package. 2 ) High breakdown voltage. Parameter Col lector-base voltage

Contextual Info: 2SA1579FRA / 2SA1514AK 2SA1579 / 2SA1514K Datasheet PNP -50mA -120V High-Voltage Amplifier Transistors AEC-Q101 Qualified lOutline Parameter Value VCEO IC -120V -50mA UMT3 Collector SMT3 Collector Base Base Emitter Emitter 2SA1579FRA 2SA1579 SOT-323 SC-70

BJT datasheet

Abstract: transistor MJE -1103 BJT Transistor BF transistor datasheet Q2SA1514K transistor bjt datasheet MJE64 BJT pnp 2SA1514 592E
Contextual Info: SPICE PARAMETER 2SA1514K by ROHM TR Div. * 2SA1514K PNP BJT model * Date: 2006/12/06 .MODEL 2SA1514K PNP + IS=60.000E-15 + BF=410.23 + VAF=58.369 + IKF=.24851 + ISE=60.000E-15 + NE=1.6719 + BR=.99563 + VAR=100 + IKR=.5153 + ISC=26.592E-12 + NC=1.6784 + NK=.94666

3906K

Contextual Info: 2SA1514K/2SA1579 h ~7> V Z $ / T ransistors 2SA1514K 2SA1579 I fc i 7 ^ 1 /7 lx - : H f 2 P N P V ' j 3 > h 7 > y ^ i ' Epitaxial Planar PNP Silicon Transistors ¡gWEEiStiffl/High Voltage Amp. • ÿ i-J f^ Ü H /D im e n s io n s Unit : mm 1) S S4E T 'i.5o VC e o = -1 2 0 V

2SA1513

Contextual Info: AOK AOK Semiconductor P ro d u c t S p e c ific a tio n S ilic o n PNP P o w e r T ra n s is to rs 2SA1513 DESCRIPTION • With TO-3PML package • High current capability • Low collector saturation voltage APPLICATIONS • For high speed and high power

Contextual Info: O rdering num ber: EN 2 1 0 5 A 2SA1511/2SC3901 i PN P/ NPN Epitaxial P lanar Silicon T ransistors SA i YO i Sw itching Applications with Bias Resistance ,# Jl;. Applications Ik Features * On-chip bias resistance: Rl-4.7kfi * Small-sized package: SPA •V

2SA1516

Abstract: 2SC3907
Contextual Info: JMnic Product Specification 2SA1516 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-3P I package ・Complement to type 2SC3907 ・High collector voltage APPLICATIONS ・Power amplifier applications ・Recommend for 80W high fidelity audio frequency amplifier output stage

2SA1513

Contextual Info: JMnic Product Specification 2SA1513 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-3PML package ・High current capability ・Low collector saturation voltage APPLICATIONS ・For high speed and high power switching applications PINNING PIN DESCRIPTION

2sa1516

Contextual Info: SILICON PNP TRIPLE DIFFUSED TYPE 2SA1516 POWER AMPLIFIER APPLICATIONS. Unit in mm FEATURES: 15.9 M A X . High Collector Voltage : VcEO=-180V Min. 03.2±O.2 / . Complementary to 2SC3907 & . Recommend for 80W High Fiderity Audio Frequency Amplifier Output Stage.

Contextual Info: FM Y 5 Transistors FM Y6 General Purpose Dual Transistors I FMY5 •F eatures 1 ) 2SA1514K and 2SC3906K chips are housed in an SMT package. 2 ) PNP and NPN chips are connected in a common emitter configuration. • Absolute maximum ratings (Ta=25°C) Parameter

2SA1514K

Abstract: IA 05
Contextual Info: Transistors SMD Type High-voltage Amplifier Transistor 2SA1514K SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 0.55 High breakdown voltage. +0.1 1.3-0.1 +0.1 2.4-0.1 0.4 3 Features 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01

2SA amplifier

Abstract: H1000I 2SA1514K 2SA1579 2SC3906K 2SC4102 transistor 2SA transistor PNP
Contextual Info: 2SA1514K 2SA1579 Transistor, PNP Features Dimensions Units : mm • available in SMT3 (SMT, SC-59) and UMT3 (UMT, SC-70) packages • package marking: 2SA1514K and 2SA1579; R-*, where ★ is hFE code • • high breakdown voltage: V qeo = -120 V complementary pair with 2SC3906K

2SA1514K

Abstract: 2SA1579 2SC3906K 2SC4102
Contextual Info: Transistors 2SA1579 / 2SA1514K 2SC4102 / 2SC3906K 96-92-A41 (96-170-C41) 275

2SC3907

Abstract: 2SA1516
Contextual Info: SavantIC Semiconductor Product Specification 2SC3907 Silicon NPN Power Transistors DESCRIPTION •With TO-3P I package ·Complement to type 2SA1516 APPLICATIONS ·Audio and general purpose power amplifier applications ·Recommend for 80W high fidelity audio

LM8550

Abstract: KTD2026 2SC2320 equivalent NEC 12F DATASHEET 2N3904 MOTOROLA 2sc2240 equivalent 2N3906 MOTOROLA 2sc1983 2N5400 MOTOROLA 2SD1960
Contextual Info: Type No. Maker KEC Type No. Maker KEC Type No. Maker KEC Type No. Maker KEC 2N2222/A Motorola KTN2222/A 2SA1150 Toshiba KTA1272 2SA1510 Sanyo KRA1 10S 2SB546A NEC KTB 1369 2N2369/A Motorola KTN2369/A 2SA1151 NEC KTA1266 2SA1511 Sanyo KRA1 10M 2SB560 Sanyo