2N6904 Search Results

2N6904

Abstract: lO51A
Contextual Info: 2N6904 [g HARRIS August 1991 N-Channel Logic Level Power MOS Field-Effect Transistors L2FET Package Features T O -2 D 4 A A • 8A, 200V B O TTO M VIEW • rDS(on) = SOURCE • Design O ptim ized fo r 5V Gate Drive f DRAIN (FLANGE) • Can be Driven D irectly from QMOS, NMOS, TTL C ircuits

2N6904

Abstract: L051 2N6895 QPL-19500 2N6904 JANTX 2N6901 2N6903 2N6901 JANTXV 741 terminal
Contextual Info: Logic-Level Power MOSFETs 2N6904 F ile N u m b e r 1880 N-Channel Logic Level Power MOS Field-Effect Transistors L2 FET 8 A, 200 V r D s ( o n ) : 0.6 ft N-CHANNEL ENHANCEMENT MODE Features: • D e s ig n o p tim iz e d f o r 5 v o lt g a te d riv e ■ C a n b e d riv e n d ir e c tly fr o m Q -M O S ,

2N6904

Contextual Info: toaucti, Una* TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. 2N6904 N-Channel Logic Level Power MOS Field-Effect Transistors (L2 FET) 8 A, 200 V ros(on): 0.6 0 Features: • Design optimized tor 5 volt gate drive

Contextual Info: • 43 QE 27 1 0D S4 70 4 SflT ■ HAS 2N6904 33 HARRIS August 1991 N -C h a n n e l Logic Level Pow er M OS F ie ld -E ffe c t Transistors L2 FET Package Features TO -204A A • 8A, 200V BOTTOM VIEW • r DS(on) = ° - 6 n SOURCE • Design O ptim ized fo r 5V Gate Drive

lts 542

Abstract: LTS 543 2n6800 LTS 542 INTERNAL DIAGRAM 2N6756 2N6790 LH0063 QPL-19500 TRANSISTOR C 557 B
Contextual Info: Standard Power MOSFETs 2N6790 File N u m be r 1900 N-Channel Enhancement-Mode Power MOS Field-Effect Transistors 3.5 A, 200V N-CHANNEL ENHANCEMENT MODE TDSIonl = 0 . 8 0 Features: • a ■ ■ m SOA is power-dissipation limited Nanosecond switching speeds

QPL-19500

Abstract: 2N6903 2n6901 2N6758 JANTX 2N6903 JANTX 2N6898 JANTX 2N6898 2N6756 2N6758 2N6760
Contextual Info: Logic-Level Power MOSFETs File Number 2N6903 1879 N-Channel Logic Level Power MOS Field-Effect Transistors L2FET rDs(on): 3.65 O N-CHANNEL ENHANCEMENT MODE Features: • Design optimized for S-voit gate drive ■ Can be driven directly from QMOS, NMOS, TTL circuits

2n5764

Abstract: 2N6764 JANTXV 2N6764 JANTX 2N6764 2N6164 2N6901 2N6763 25C31
Contextual Info: Standard Power MOSFETs, File Number 2N6763, 2N6764 1590 N-Channel Enhancement-Mode Power MOS Field-Ef fect Transistors 31A and 38A, 60V-100V rDs on = 0.08 O and 0.055 Q N-CHANNEL ENHANCEMENT MODE Feature«: • SOA is power-dissipation lim ited ■ Nanosecond sw itching speeds

2N6898 JANTX

Abstract: 2N6898 2N6898 JANTXV TRANSISTOR C 557 B QPL-19500
Contextual Info: Standard Power MOSFETs File Number 2N6898 1876 Power MOS Field-Effect Transistors P-Channel Enhancement-Mode Power MOS Field-Effect Transistors 25 A, -1 0 0 V rDs on : 0.20 Cl TERMINAL DIAGRAM Features: • SOA is power-dissipation lim ited ■ Nanosecond switching speeds

2N6794

Abstract: 2N6794 JANTX fllnm 80 3v 4 channal relay fllnm qpl-19500 LH0063 TRANSISTOR C 557 B 600V P-CHANNEL ENHANCEMENT MODE POWER MOSFET 2N6796 IR
Contextual Info: Standard Power MOSFETs 2N6794 File Number 1902 Power MOS Field-Effect Transistors N-Channel Enhancement-Mode Power MOS Field-Effect Transistor 1.5A, 500V rD S on = 3 0 N-CHANNEL ENHANCEMENT MODE Features: • SOA is power-dissipation lim ited m Nanosecond switching speeds

2N6782

Abstract: 2n6800 LH0063 QPL-19500
Contextual Info: Standard Power MOSFETs 2N6782 File Number 1592 Power MOS Field-Effect Transistors N-Channel Enhancement-Mode Power Field-Effect Transistors N-CHANNEL ENHANCEMENT MODE 3.5A, 100V ro s o n = 0 .6 O Features: • SOA is power-dissipation limited ■ Nanosecond switching speeds

2N6770

Abstract: 2n6800 2N6769 2N6770 JANTXV 2N6770 JANTX
Contextual Info: Standard Power MOSFETs File N u m be r 2N6769, 2N6770 1899 Power MOS Field-Effect Transistors N-Channel Enhancement-Mode Power MOS Field-Effect Transistore 11A and 12A, 4 50 V -5 0 0 V rDS on> = 0.50 and 0.40 N-CHANNEL ENHANCEMENT MODE Features: • SOA is power-dissipation limited

2N6760

Abstract: 2N6898 2N67 2N6759
Contextual Info: Standard Power M O SFETs 2N6759, 2N6760 File Number 1588 N-Channel Enhancement-Mode Power Field-Effect Transistors T E R M IN A L D IA G R A M 4.5A and 5.5A, 350V - 400V rDs on = 1.0 Q and 1.5 Q o 9 Features: • SOA is pow er-dissipation lim ited ■ N anosecond sw itching speeds

2N6895 JANTXV

Abstract: qpl-19500 2N6895 TRANSISTOR C 557 B 2N6898 2N6901 2N6756 JANTX 40722 2N6800 JANTX 2N689S
Contextual Info: Standard Power MOSFETs File Number 2N6895 1873 Power MOS Field-Effect Transistors P-Channel Enhancernent-Mode Power MOS Field-Efifect Transistors 1.16 A, 100 V rDs on : 3.65 0 TERMINAL DIAGRAM Features: • SOA Is power-dissipation limited m Nanosecond switching speeds

2N6898

Abstract: 2N6897 36485 2N6798 TRANSISTOR C 557 B 2n6800 2N6901 IDM30 2N6904 qpl-19500
Contextual Info: Standard Power M O SFETs File Number 1875 2N6897 Power M O S Field-Effect Transistors P-Channei Enhancement-Mode Power M O S Field-Effect Transistors 12 A, 100 V ros on : 0.3 0 TERMINAL DIAGRAM 3 o Features: • SOA is power-dissipation lim ited ■ Nanosecond sw itching speeds

2N6758

Abstract: 2N6902 QPL-19500
Contextual Info: Logic-Level Power MOSFETs File Number 2N6902 1878 N-Channel Logic Level Power MOS Field-Effect Transistors L2 FET 12 A, 100 V rDs(on): 0.2 fi N-CHANNEL. ENHANCEMENT MODE Features: • Design optimized for 5 volt gate drive • Can be driven directly from Q-MOS,

2n6798 jantx

Abstract: 2N6798 IH0063 2N6756 QPL-19500
Contextual Info: Standard Power MOSFETs 2N6798 File Number 1903 Power MOS Field-Effect Transistors N-Channel Enhancement-Mode Power MOS Field-Effect Transistor 5.5A, 200V TDSIonl = 0 .4 0 N-CHANNEL ENHANCEMENT MODE Features: • m m ■ ■ SOA is power-dissipation limited

2N6792 JANTX

Abstract: 2N6792 2n6800 C055 LH0063 QPL-19500 2N6904
Contextual Info: Standard Power MOSFETs File N u m be r 1901 2N6792 Power MOS Field-Effect Transistors N-Channel Enhancement-Mode Power MOS Field-Effect Transistors 2 A, 400V T oS lon = 1 80 N-CHANNEL ENHANCEMENT MODE D Features: • SOA is power-dissipation limited m Nanosecond switching speeds

qpl-19500

Abstract: 2N6896 TRANSISTOR C 557 B 2N6898 40716 2N6897 JANTXV
Contextual Info: Standard Power MOSFETs File Number 2N6896 1874 Power MOS Field-Eflfect Transistors P-Channel Enhancernent-Mode Power MOS Field-Efffect Transistors 6 A, 100 V rDs on : 0.6 Ci TE R M IN A L D IA G R A M Feature«: • SOA is power-dissipation lim ited ■ Nanosecond sw itching speeds

2N7119

Abstract: 2N7122 2N7121 2N6967 2N7243 2N724 2N6966 2N7123 JANTX LTPD FOR LOT AND SCREENING DEVICES 2N7242
Contextual Info: HARRIS SEMICOND SECTOR SbE T> • 430EE71 QÜ42235 ‘ìbb H H A S Military Power Products MOSFETs M ilitary Pow er Products Military and aerospace requirements for high—reliability solid-state devices are extremely large and diverse, not only in terms of performance, operating conditions, and

field-effect transistors

Abstract: 05LSM RFP8N18L RFP25N06L transistors 2N6904 field-effect transistor RFP14N05L M 615 transistor transistor 684
Contextual Info: _ POWER MOSFETs 6 L O G IC L E V E L P O W E R M O S F E T s PAGE 2N6901 N-Channel Logic Level Power MOS Field-Effect Transistor L2F E T . 6-3 2N6902 N-Channel Logic Level Power MOS Field-Effect Transistor (L2F E T ) .

2N6784

Abstract: 2n6800 LH0063 QPL-19500 2sC 1906 transistor 2N6784 JANTX
Contextual Info: Standard Power MOSFETs File N um ber 2N6784 1906 Power MOS Field-Effect Transistors N-Channel Enhancement-Mode Power MOS Field-Effect Transistor N-CHANNEL ENHANCEMENT MODE 2.25A, 200V fD S o n = 1.50 Features: • SOA is power-dissipatiort limited m Nanosecond switching speeds

2N6851

Abstract: 2N6851 JANTX 2n6800
Contextual Info: Rugged Power MOSFETs 2N6851 File N u m be r 2218 Avalanche-Energy-Rated P-Channel Power MOSFETs -4.0A, and -200V I ds on = 0.80Q TERMINAL DIAGRAM Features: • S in g le p u lse a v a la n ch e e n e rg y ra te d m S O A is p o w e r-d is s ip a tio n lim ite d

Contextual Info: SFL630 series Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, CA 90638 Phone: 562 404-4474 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com DESIGNER’S DATA SHEET Logic Level 10 AMP, 200 Volts, 400 mΩ Avalanche Rated N-MOSFET

2N6901 JANTX

Abstract: 2N6901 2N6901 JANTXV 2N6901 JANTX harris 2n6898 transistor h44 2n6800 2N6897 JANTXV 2N6897
Contextual Info: Logic-Level Power MOSFETs File Number 2N6901 1877 N-Channel Logic Level Power MOS Field-Effect Transistors L2FET rDs(on): 1.4 fi Feature*: • Design optimized for 5-voit gate drive ■ Can be driven directly from QMOS, NMOS, TTL circuits ■ Compatible with automotive drive requirements