Part Number
    Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers
    Manufacturer Search

    2N6903 Search Results

    2N6903 Datasheets (5)

    Select Manufacturer
    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    2N6903
    		Harris Semiconductor Power MOSFET Data Book 1990 Scan PDF 278.53KB 5
    2N6903
    		Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF 30.78KB 1
    2N6903
    		Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF 108.1KB 1
    2N6903
    		Unknown Shortform Datasheet & Cross References Data Short Form PDF 83.37KB 1
    2N6903TX
    		Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF 30.78KB 1

    2N6903 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    QPL-19500

    Abstract: 2N6903 2n6901 2N6758 JANTX 2N6903 JANTX 2N6898 JANTX 2N6898 2N6756 2N6758 2N6760
    Contextual Info: Logic-Level Power MOSFETs File Number 2N6903 1879 N-Channel Logic Level Power MOS Field-Effect Transistors L2FET rDs(on): 3.65 O N-CHANNEL ENHANCEMENT MODE Features: • Design optimized for S-voit gate drive ■ Can be driven directly from QMOS, NMOS, TTL circuits


    OCR Scan     		2n69032n6796o-2i35afo-205af+132n6800t0-205af2n6802mil-s-19500/qpl-195002n69012n6758 jantx2n6903 jantx2n6898 jantx2n68982n67562n67582n6760 PDF

    2N6903 JANTX

    Contextual Info: 2N6903+JANTX Transistors N-Channel Enhancement MOSFET Military/High-RelY V BR DSS (V)200 V(BR)GSS (V)10 I(D) Max. (A)1.5 I(DM) Max. (A) Pulsed I(D)1.0 @Temp (øC)100# IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)8.33 Minimum Operating Temp (øC)-55õ


    Original     		2n6903junc-case152n6903 jantx PDF

    2N6903

    Abstract: 92CS-4C745 SC12N
    Contextual Info: 2N6903 g HARRIS January 1994 N-Channel Logic Level Power MOS Field-Effect Transistors (L2FET F e a tu re s P a ck a g e T 0 -2 0 5 A F • 0.9 8A , 2 0 0 V B O TTO M VIEW • rD S(on) = 3 .6 5 H • Design O p tim ized fo r 5V G ate Drive • Can b e D riven Directly from Q M O S, NM O S, TT L Circuits


    OCR Scan     		2n690392cs-4c745sc12n PDF

    lts 542

    Abstract: LTS 543 2n6800 LTS 542 INTERNAL DIAGRAM 2N6756 2N6790 LH0063 QPL-19500 TRANSISTOR C 557 B
    Contextual Info: Standard Power MOSFETs 2N6790 File N u m be r 1900 N-Channel Enhancement-Mode Power MOS Field-Effect Transistors 3.5 A, 200V N-CHANNEL ENHANCEMENT MODE TDSIonl = 0 . 8 0 Features: • a ■ ■ m SOA is power-dissipation limited Nanosecond switching speeds


    OCR Scan     		2n679092cs-3374i2n6796o-2i35af+10o-205af2n6800t0-205aflts 542lts 543lts 542 internal diagram2n6756lh0063qpl-19500transistor c 557 b PDF

    2n5764

    Abstract: 2N6764 JANTXV 2N6764 JANTX 2N6764 2N6164 2N6901 2N6763 25C31
    Contextual Info: Standard Power MOSFETs, File Number 2N6763, 2N6764 1590 N-Channel Enhancement-Mode Power MOS Field-Ef fect Transistors 31A and 38A, 60V-100V rDs on = 0.08 O and 0.055 Q N-CHANNEL ENHANCEMENT MODE Feature«: • SOA is power-dissipation lim ited ■ Nanosecond sw itching speeds


    OCR Scan     		2n67632n67640v-100v2n6796+7o-2i35af2n57642n6764 jantxv2n6764 jantx2n61642n690125c31 PDF

    2N6898 JANTX

    Abstract: 2N6898 2N6898 JANTXV TRANSISTOR C 557 B QPL-19500
    Contextual Info: Standard Power MOSFETs File Number 2N6898 1876 Power MOS Field-Effect Transistors P-Channel Enhancement-Mode Power MOS Field-Effect Transistors 25 A, -1 0 0 V rDs on : 0.20 Cl TERMINAL DIAGRAM Features: • SOA is power-dissipation lim ited ■ Nanosecond switching speeds


    OCR Scan     		2n68982n6796o-2i35afo-205af+82n6800t0-205af2n6802mil-s-19500/2n6898 jantx2n6898 jantxvtransistor c 557 bqpl-19500 PDF

    2N6794

    Abstract: 2N6794 JANTX fllnm 80 3v 4 channal relay fllnm qpl-19500 LH0063 TRANSISTOR C 557 B 600V P-CHANNEL ENHANCEMENT MODE POWER MOSFET 2N6796 IR
    Contextual Info: Standard Power MOSFETs 2N6794 File Number 1902 Power MOS Field-Effect Transistors N-Channel Enhancement-Mode Power MOS Field-Effect Transistor 1.5A, 500V rD S on = 3 0 N-CHANNEL ENHANCEMENT MODE Features: • SOA is power-dissipation lim ited m Nanosecond switching speeds


    OCR Scan     		2n67942n6796o-2i35afo-205af+132n6800t0-205af2n6802mil-s-19500/2n6794 jantxfllnm 803v 4 channal relayfllnmqpl-19500lh0063transistor c 557 b600v p-channel enhancement mode power mosfet2n6796 ir PDF

    2N6782

    Abstract: 2n6800 LH0063 QPL-19500
    Contextual Info: Standard Power MOSFETs 2N6782 File Number 1592 Power MOS Field-Effect Transistors N-Channel Enhancement-Mode Power Field-Effect Transistors N-CHANNEL ENHANCEMENT MODE 3.5A, 100V ro s o n = 0 .6 O Features: • SOA is power-dissipation limited ■ Nanosecond switching speeds


    OCR Scan     		2n67822n6796o-2i35afo-205af+52n6800t0-205af2n6802lh0063qpl-19500 PDF

    2N6770

    Abstract: 2n6800 2N6769 2N6770 JANTXV 2N6770 JANTX
    Contextual Info: Standard Power MOSFETs File N u m be r 2N6769, 2N6770 1899 Power MOS Field-Effect Transistors N-Channel Enhancement-Mode Power MOS Field-Effect Transistore 11A and 12A, 4 50 V -5 0 0 V rDS on> = 0.50 and 0.40 N-CHANNEL ENHANCEMENT MODE Features: • SOA is power-dissipation limited


    OCR Scan     		2n67692n677050v-500v2n6796+5o-2i35afo-205af2n68002n6770 jantxv2n6770 jantx PDF

    2N6760

    Abstract: 2N6898 2N67 2N6759
    Contextual Info: Standard Power M O SFETs 2N6759, 2N6760 File Number 1588 N-Channel Enhancement-Mode Power Field-Effect Transistors T E R M IN A L D IA G R A M 4.5A and 5.5A, 350V - 400V rDs on = 1.0 Q and 1.5 Q o 9 Features: • SOA is pow er-dissipation lim ited ■ N anosecond sw itching speeds


    OCR Scan     		2n67592n6760tq-204aa2n6796+5o-2i35afo-205af2n68002n68982n67 PDF

    2N6895 JANTXV

    Abstract: qpl-19500 2N6895 TRANSISTOR C 557 B 2N6898 2N6901 2N6756 JANTX 40722 2N6800 JANTX 2N689S
    Contextual Info: Standard Power MOSFETs File Number 2N6895 1873 Power MOS Field-Effect Transistors P-Channel Enhancernent-Mode Power MOS Field-Efifect Transistors 1.16 A, 100 V rDs on : 3.65 0 TERMINAL DIAGRAM Features: • SOA Is power-dissipation limited m Nanosecond switching speeds


    OCR Scan     		2n68952n689s2n6796o-2i35af+12o-205af2n6800t0-205af2n68022n6895 jantxvqpl-19500transistor c 557 b2n68982n69012n6756 jantx407222n6800 jantx PDF

    2N6898

    Abstract: 2N6897 36485 2N6798 TRANSISTOR C 557 B 2n6800 2N6901 IDM30 2N6904 qpl-19500
    Contextual Info: Standard Power M O SFETs File Number 1875 2N6897 Power M O S Field-Effect Transistors P-Channei Enhancement-Mode Power M O S Field-Effect Transistors 12 A, 100 V ros on : 0.3 0 TERMINAL DIAGRAM 3 o Features: • SOA is power-dissipation lim ited ■ Nanosecond sw itching speeds


    OCR Scan     		2n68972n6796o-2i35afo-205af+122n6800t0-205af2n6802mil-s-19500/2n6898364852n6798transistor c 557 b2n6901idm302n6904qpl-19500 PDF

    2N6849

    Abstract: 2N6849 JANTX b 43306 2n6800 2n6849 mosfet 2n6849 jantxv
    Contextual Info: Rugged Power MOSFETs File N u m b e r 2N6849 2219 Avalanche-Energy-Rated P-Channel Power MOSFETs -6.5A, and -100V ib s on = 0.30Q TERMINAL DIAGRAM D Features: • Single pulse avalanche energy rated m SOA is pow er-dissipation lim ited m N anosecond sw itching speeds


    OCR Scan     		2n6849-100v92cs-432622n6796+8o-2i35afo-205af2n6800t0-205af2n6849 jantxb 433062n6849 mosfet2n6849 jantxv PDF

    2N6758

    Abstract: 2N6902 QPL-19500
    Contextual Info: Logic-Level Power MOSFETs File Number 2N6902 1878 N-Channel Logic Level Power MOS Field-Effect Transistors L2 FET 12 A, 100 V rDs(on): 0.2 fi N-CHANNEL. ENHANCEMENT MODE Features: • Design optimized for 5 volt gate drive • Can be driven directly from Q-MOS,


    OCR Scan     		2n690292cs-3374i2n6796o-2i35af+6o-205af2n6800t0-205af2n68022n6758qpl-19500 PDF

    2N6792 JANTX

    Abstract: 2N6792 2n6800 C055 LH0063 QPL-19500 2N6904
    Contextual Info: Standard Power MOSFETs File N u m be r 1901 2N6792 Power MOS Field-Effect Transistors N-Channel Enhancement-Mode Power MOS Field-Effect Transistors 2 A, 400V T oS lon = 1 80 N-CHANNEL ENHANCEMENT MODE D Features: • SOA is power-dissipation limited m Nanosecond switching speeds


    OCR Scan     		2n67922n6796o-2i35afo-205af+92n6800t0-205af2n6802mil-s-19500/2n6792 jantxc055lh0063qpl-195002n6904 PDF

    qpl-19500

    Abstract: 2N6896 TRANSISTOR C 557 B 2N6898 40716 2N6897 JANTXV
    Contextual Info: Standard Power MOSFETs File Number 2N6896 1874 Power MOS Field-Eflfect Transistors P-Channel Enhancernent-Mode Power MOS Field-Efffect Transistors 6 A, 100 V rDs on : 0.6 Ci TE R M IN A L D IA G R A M Feature«: • SOA is power-dissipation lim ited ■ Nanosecond sw itching speeds


    OCR Scan     		2n6896t0-204aa2n6796o-2i35af+8o-205af2n6800t0-205afqpl-19500transistor c 557 b2n6898407162n6897 jantxv PDF

    2N7119

    Abstract: 2N7122 2N7121 2N6967 2N7243 2N724 2N6966 2N7123 JANTX LTPD FOR LOT AND SCREENING DEVICES 2N7242
    Contextual Info: HARRIS SEMICOND SECTOR SbE T> • 430EE71 QÜ42235 ‘ìbb H H A S Military Power Products MOSFETs M ilitary Pow er Products Military and aerospace requirements for high—reliability solid-state devices are extremely large and diverse, not only in terms of performance, operating conditions, and


    OCR Scan     		430ee71qg42235tc5-204aa2n7120+11t0-204aa2n71212n71222n71232n71192n69672n72432n7242n6966jantx ltpd for lot and screening devices2n7242 PDF

    field-effect transistors

    Abstract: 05LSM RFP8N18L RFP25N06L transistors 2N6904 field-effect transistor RFP14N05L M 615 transistor transistor 684
    Contextual Info: _ POWER MOSFETs 6 L O G IC L E V E L P O W E R M O S F E T s PAGE 2N6901 N-Channel Logic Level Power MOS Field-Effect Transistor L2F E T . 6-3 2N6902 N-Channel Logic Level Power MOS Field-Effect Transistor (L2F E T ) .


    OCR Scan     		2n69012n69022n69032n6904+15rfl1n08lrfl1n10lrfl1n12lrfl1n15lrfl1n18lrfl1n20lfield-effect transistors05lsmrfp8n18lrfp25n06ltransistorsfield-effect transistorrfp14n05lm 615 transistortransistor 684 PDF

    2N6784

    Abstract: 2n6800 LH0063 QPL-19500 2sC 1906 transistor 2N6784 JANTX
    Contextual Info: Standard Power MOSFETs File N um ber 2N6784 1906 Power MOS Field-Effect Transistors N-Channel Enhancement-Mode Power MOS Field-Effect Transistor N-CHANNEL ENHANCEMENT MODE 2.25A, 200V fD S o n = 1.50 Features: • SOA is power-dissipatiort limited m Nanosecond switching speeds


    OCR Scan     		2n67842n6796o-2i35afo-205af+72n6800t0-205af2n6802lh0063qpl-195002sc 1906 transistor2n6784 jantx PDF

    2N6851

    Abstract: 2N6851 JANTX 2n6800
    Contextual Info: Rugged Power MOSFETs 2N6851 File N u m be r 2218 Avalanche-Energy-Rated P-Channel Power MOSFETs -4.0A, and -200V I ds on = 0.80Q TERMINAL DIAGRAM Features: • S in g le p u lse a v a la n ch e e n e rg y ra te d m S O A is p o w e r-d is s ip a tio n lim ite d


    OCR Scan     		2n6851-200vcs-432n6796+5o-2i35afo-205af2n6800t0-205af2n6851 jantx PDF

    2N6903 JANTX

    Abstract: 2N6903
    Contextual Info: INCH - POUND The documentation and process conversion measures necessary to comply with this revision shall be completed by 11 April 2009. MIL-PRF-19500/570D 11 January 2009 SUPERSEDING MIL-PRF-19500/570C 17 August 2005 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, FIELD EFFECT,


    Original     		mil-prf-19500/570dmil-prf-19500/570c2n69012n6903+2mil-prf-195002n6903 jantx PDF

    Transistor 2SA 2SB 2SC 2SD

    Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59
    Contextual Info: cD/ transistor 2 0-u datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-01-9 Dieses Buch ist hinterlegt und urheberrechtlich geschutzt. Alle


    OCR Scan     		transistor 2sa 2sb 2sc 2sd2sk5962sc9062sa1281+6bup 3130c3885a2sd1032sa137934d 937 086bfq59 PDF

    2N6901

    Abstract: 2N6901 JANTX 2N6903 2N6903 JANTX mos die 2N6901 JANTXV
    Contextual Info: INCH - POUND The documentation and process conversion measures necessary to comply with this revision shall be completed by 26 November 2010. MIL-PRF-19500/570E 26 August 2010 SUPERSEDING MIL-PRF-19500/570D 11 January 2009 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, FIELD EFFECT,


    Original     		mil-prf-19500/570emil-prf-19500/570d2n69012n6903+5mil-prf-195002n6901 jantx2n6903 jantxmos die2n6901 jantxv PDF

    2N6901 JANTX

    Abstract: 2N6901 2N6901 JANTXV 2N6901 JANTX harris 2n6898 transistor h44 2n6800 2N6897 JANTXV 2N6897
    Contextual Info: Logic-Level Power MOSFETs File Number 2N6901 1877 N-Channel Logic Level Power MOS Field-Effect Transistors L2FET rDs(on): 1.4 fi Feature*: • Design optimized for 5-voit gate drive ■ Can be driven directly from QMOS, NMOS, TTL circuits ■ Compatible with automotive drive requirements


    OCR Scan     		2n69012n6796o-2i35afo-205af+112n6800t0-205af2n6802mil-s-19500/2n6901 jantx2n6901 jantxv2n6901 jantx harris2n6898transistor h442n6897 jantxv2n6897 PDF