2N499 Search Results

2N5001

Abstract: TCA 875 MW-82 2N5149 2N4999
Contextual Info: TYPES 2N4999. 2N5001, 2N5147, 2N5149 P-N-P SILICON POWER TRANSISTORS H IG H -F R E Q U E N C Y POWER TRAN SISTO RS W ITH CO M PUTER-D ESIG NED IS O TH E R M A L G EO M ETR Y • For Complementary Use With 2N 4998, 2N 5000, 2N 5148, and 2N 5150 • 6 mJ Reverse Energy Rating with lc = 5 A and 4 V Reverse Bias

2N4996

Abstract: 2n4997 S69-1
Contextual Info: TYPES 2N4996. 2N4997 N-P-N SILICON TRANSISTORS B U L L E T IN N O . D L -S 691 1249, A U G U S T 1969 H IG H -F R E Q U E N C Y S IL E C T t T R A N S IS T O R S ! FOR T U N E R A N D IF -A M P L IF IE R S T A G E S IN FM A N D A M /FM S T E R E O -M U L T IP L E X R E C E IV E R S

PDTC

Abstract: 2N5282 2N3795 2N3868 2N4999 2N5001 2N5005 2N5281 2N5333 SFT5333
Contextual Info: PNP TRANSISTORS h F E @ 1C Device Type V C E O sus Volts Min 1 120 150 2N3795 2N5281 80 2N4999 2 25 SFT5333 2N3868 50 20 1.0 2.0 2.5 60 2.5 2.5 60 70 30 30 15 15 50 50 100 100 6 50 25 50 50 50 TO-59 TO-59 TO-5 TO-5 TO-5 2N5003 30 2N5005 2M6190 70 30 2.0

Contextual Info: na. TELEPHONE: 979 378*2922 (212) 227-8008 FAX: (973) 3784880 20 STERN AVE. SPfllNQRELD, NEW JERSEY 07081 U.SA 2N4997 N-P-N SILICON TRANSISTOR *AU JEDEC TO-92 DIMENSIONS AND NOTES ARE APPLICABLE AH pIMENilONi IN INCHII —MK- 0.010 (NOT! A) .• N —H o'«> + A^—i r~H_

2N4991

Abstract: silicon bilateral switch
Contextual Info: 2N4991 Silicon bilateral switch SBS in package TO-92 0.45max 0.7max 1 5.2 1.6 2 2.5 14.5 5.2 3 4.2 Pinouts: 1- Anode II, 2- Gate, 3- Anode I Ratings Symbol IT(rms) Igm IT(sm) P Parameter, units Limits DC forward anode current, mA DC gate current, mA Peak recurrent forward current, A,

2N4992

Abstract: SBS 14 silicon bilateral switch 8162-2
Contextual Info: 2N4992 Silicon bilateral switch SBS in package TO-92 0.45max 0.7max 1 1.6 2 2.5 5.2 14.5 5.2 3 4.2 Pinouts: 1- Anode II, 2- Gate, 3- Anode I Ratings Symbol IT(rms) Igm IT(sm) P Parameter, units Limits DC forward anode current, mA DC gate current, mA Peak recurrent forward current, A,

Contextual Info: SEM ELA B pic - SELECTO R GUIDE DISCRETE BI-POLAR DEVICES Type_No Description 2N4938DCSM 2N4939 2N4939DSCM 2N4999 2N5000 2N5000-SM 2N5001 2N5001-SM 2N5001S 2N5002 2N5002-SM 2N5010 2N5011 2N5012 2N5013 2N5014 2N5015 2N5015S 2N5023 2N5023S 2N5038 2N5038 C E C C

Contextual Info: "type No. 6133167 □□□□□SO fl 37E D SEMELAB LTD Option'1*^ Po,arity 2N4925 2N4928 2N4929 2N4930 2N4931 SCREEN HI-REL SCREEN SCREEN SCREEN NPN PNP PNP PNP PNP 2N4937 2N4999 2N5000 2N5001 2N5002 HI-REL HI-REL HI-REL HI-REL HI-REL PNP PNP NPN PNP NPN

2sc948

Abstract: 2N4935 2SC922 2SC1674 2sc717 2SC947 2SC839 2sc929 2SC930 2SC1730
Contextual Info: RF-IF High Frequency Transistors POLA­ RITY fT VCE sat HFE MAXIMUM RATINGS TYPE NO. CASE Pd (mW) ("A ) VCEO (V) IC min max IC (mA) VCE (V) max (V) IC (mA) nun (MHz) Cob Cre* max (PF) _ N.F. max (dB) 2N4934 2N4935 2N4936 2N4994 2N4995 N N N N N TO-72J TO-72J

2N5141

Contextual Info: , Lf nc. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212) 227-6005 FAX: (973) 376-8960 TYPES 2N4998, 2N5000, 2NS148, 2N5150 N-P-N SILICON POWER TRANSISTORS HIGH-FREQUENCY POWER TRANSISTORS WITH COMPUTER-DESIGNED ISOTHERMAL GEOMETRY

GE 2N6027

Abstract: 2N5258 2SF128 2N5257 2N60758 2N6151 TIC236B 2n60758 motorola 02010LT 2N60738
Contextual Info: DISCONTINUED PART NUMBERS Part Number Manufacturer Manufacturer 2N4947 Texas Instr 2N4948 Texas Instr 2N4949 Texas Instr 2N4986 2N4993 2N5060 Franel Corp Sid St Syst TAG Semi TexslnstLtd 2N5061 Franel Corp Precsn Semi SprgueElec Texas Instr Transltron 2N5062

2N60758

Abstract: 2N60738 2n60758 motorola 2N60718 2SF120 2N60708 2SF126 2SF32A 2sf248 2N5257
Contextual Info: DISCONTINUED PART NUMBERS Part Number Manufacturer Manufacturer 2N4947 Texas Instr 2N4948 Texas Instr 2N4949 Texas Instr 2N4986 2N4993 2N5060 Franel Corp Sid St Syst TAG Semi TexslnstLtd 2N5061 Franel Corp Precsn Semi SprgueElec Texas Instr Transltron 2N5062

2N5000

Abstract: circuit 2N 3055 TIP 122 transistor APPLICATION circuit transistor tip 5530 2N4998 tip 147 TRANSISTOR BD 147 TRANSISTOR TIP 411 TRANSISTOR tip 127 2N5148
Contextual Info: TYPES 2N4998, 2N5000, 2N5148, 2N5150 N-P-N SILICON POWER TRANSISTORS HIGH-FREQUENCY POWER TRANSISTORS WITFT COMPUTER-DESIGNED ISOTHERMAL GEOMETRY For Complementary Use With 2N4999, 2N5001, 2N5147, and 2N5149 6 mJ Reverse Energy Rating with lc = 5 A and 4 V Reverse Bias

Silicon unilateral switch

Abstract: DG1U SUS GE 2N4987 2N4987 equivalent 2N4987 GE 2N4988 2n498 2N4988 soli capacitors
Contextual Info: "ÏÏÏ G E SOLID STATE DE|3fl750fll DGlflDll 3 | 0 1E 18011 387 5 08 1 G E S O L I D ST A T E D Unijunction Transistors and Switches 2N4987, 2N4988, 2N4989, 2N4990 T 'Z S -c ^ Silicon Unilateral Switch Applications: • SCR Triggers ■ Frequency Drivers

C495 transistor

Abstract: BF194 2N4996 BF194 equivalent BF195 bf357 BF597 BF195 equivalent BF594 transistor c495
Contextual Info: Silect High Frequency Transistors Maximum Ratings Device Type Case outline B V PTOT in brackets CBO ic S j o < hFE Ic BF594 (9) V V mA mW 30 20 30 250 V 1 10 BF595 (9) 30 20 30 250 35 BF597 (9) 40 25 30 360 38 2N4996 (2) T1S02A (2) 30 30 18 50 12 30 250

2N4992

Abstract: 46 SOT-23 46 sot
Contextual Info: КУ503А Симметричный тиристор в корпусе КТ-26 TO-92 АДБК.432160.500ТУ Зарубежный аналог — 2N4992 Обозначение Корпус Единицы измерения Значение КТ-26 (TO-92)

Contextual Info: na. TELEPHONE: 979 376-2922 (212) 227-6006 FAX: (973) 3764960 20 STERN AVE SPRINGFIELD, NEW JERSEY 07081 U.SA 2N4996 HIGH-FREQUENCY TRANSISTORS FOR TUNER AND IF-AMPLIFIER STAGES . IN FM AND AM/FM STEREO-MUITIPLEX RECEIVERS •absolute maximum ratings at 2S°C free-air temperature (unless otherwise noted)

Contextual Info: '^£;r'.i-^oyi.du.ctot \J-J'7.0ducti, E3iM AVE. ; :"~ EL.D, "•ie J v TELEPHONE: 973 376-2922 JERSEY o~oai 2N499 (212) 227-8005 FAX: (973) 376"SS6° GERMANIUM MICRO ALLOY DIFFUSED-BASE TRANSISTOR PNP POLARITY General Description This transistor is a PNP, germanium, triode transistor designed primarily

2SC922

Abstract: 2SC948 2N4935 2N5132 2sc929 2N4994 2SC947 2SC1789 2SC838 2N4934
Contextual Info: RF-IF High Frequency Transistors POLA­ RITY fT VCE sat HFE MAXIMUM RATINGS TYPE NO. CASE Pd (mW) ("A ) VCEO (V) IC min max IC (mA) VCE (V) max (V) IC (mA) nun (MHz) Cob Cre* max (PF) _ N.F. max (dB) 2N4934 2N4935 2N4936 2N4994 2N4995 N N N N N TO-72J TO-72J

2N601

Abstract: TA761 asy26 2n6365 AC188K Low-Power Germanium PNP 2N3371 2N3280 2N369 MXO55GA-4C-20.25M
Contextual Info: LOW-POWER GERMANIUM PNP Item Number Part Number 10 15 20 25 30 35 40 2S8186 2Nl129 TA81 TA81 TA81 2S8486 MA1705 MA1705 AC188K AC188K AC188K 2N3371 ACl15 AC154 AC156 ACl13 ASY82 ASY83 TI384 UPI404 2N310 2N215 2N369 2N499 TA761 TA761 TA761 2N2095 2N2964 2N2965

2n4993

Abstract: PH 2N4993
Contextual Info: 2N4993 Silicon bilateral switch SBS in package TO-92 0.45max 0.7max 1 5.2 1.6 2 2.5 14.5 5.2 3 4.2 Pinouts: 1- Anode II, 2- Gate, 3- Anode I Ratings Symbol IT(rms) Igm IT(sm) P Parameter, units Limits DC forward anode current, mA DC gate current, mA Peak recurrent forward current, A,

2N3183

Abstract: 2N3184 2N3185 2N3195 2N3196 2N3198 2N3203
Contextual Info: COLLECTOR CURRENT = 5 AMPS PNP TYPES— Continued Device No 2N3171 2N3172 2N3173 2N3174 2N3175 2N3176 2N3177 2N3178 2N3183 2N3184 2N3185 2N318« 2N3187 2N3188 2N3189 2N3190 2N3195 2N3196 2N3197 2N3198 2N3202 2N3203 2N3204 2N3719 2N3720 2N3867 2N3868 2N4999

2N5001

Contextual Info: SOLID STATE D EVICES 1EE INC D | ñ B b t i D l l 0 0 0 S U M ñ | r - 33~/? 2N4999AN D 2N5001 2 AMP HIGH SPEED PHP TRANSISTOR 100 VOLTS CASE STYLE X JEDEC TO—59 ALL TERMINALS ISOLATED FROM CASE 14830 Valley View Avenue La Mirada, California 90638 213 921-9660

BF194 equivalent

Abstract: BC516 equivalent BF195 equivalent BF195 BF194 BF197 2N4996 transistor bf194 2n918 plastic BF594
Contextual Info: Silect High Frequency Transistors Sj o < Maximum Ratings Device Type hFE Case outline B V PTOT Ic VCE in brackets CBO ic V V mA mW min. max. mA V 1 10 BF594 (9) 30 20 30 250 65 220 BF595 (9) 30 20 30 250 35 BF597 (9) 40 25 30 360 38 2N4996 (2) T1S02A (2)