2N4869 Search Results

Contextual Info: 2N4867 - 2N4869 / 2N4867A - 2N4869A CALOûIC CORP 4ÔE D • 1Ô443E2 0GDD315 _| N-Channel JFET Low Noise Amplifier 4 «CGC _ WUlOOIÇ CO RP O RA TIO N V 2N4867- 2N4869/2N4867A-2N4869A FEATURES 'T Z 'i-Z S ABSOLUTE MAXIMUM RATINGS Ta = 25°C unless otherwise noted

Contextual Info: 2N4869 Transistors N-Channel JFET Military/High-RelN V BR DSS (V)40 V(BR)GSS (V)40 I(D) Max. (A)50m I(G) Max. (A) Absolute Max. Power Diss. (W)300m Maximum Operating Temp (øC)175þ I(GSS) Max. (A)250p @V(GS) (V) (Test Condition) V(GS)off Min. (V) I(DSS) Max. (A)

TO72 package n-channel jfet

Abstract: 2N4867 2N4867A 2N4868A 2N4869 X2N4867 X2N4868 2N4868
Contextual Info: 2N4867 - 2N4869 / 2N4867A - 2N4869A CA L O G I C CORP 4ÔE D • 1 Ö 4 4 3 2 E GG 0 0 3 1 5 4 ■ CGC _ CO lO O IC N-Channel JFET Low Noise Amplifier CORPORATION V 2N4867- 2N4869/2N4867A - 2N4869A FEATURES 'T Z 'l- Z S ABSO LU TE MAXIMUM RATINGS Ta = 25°C unless otherwise noted

2N4866

Abstract: Siliconix JFET Dual
Contextual Info: 2N 4869A designed for Siliconix . Performance Curves NS See Section 5 2N4868A 2N4869 • Audio and Sub-Audio Am plifiers BENEFITS • Ultra Low Noise ■§„ = 8 nV/^/Hz Typical at 10 Hz en = 2 n V ^ /H z Typical at 1 kHz TO-72 See Section 7 •ABSOLUTE M AXIM UM RATINGS 25°C

2n4302

Abstract: 2N4393 FN4393 2N4119 2n4220 2n4416 jfet 2N6658 3N155 J231 3N157
Contextual Info: Siliconix 7-23 SMAUECT D m r ii ia I SIGNALI I. I r IVUUVI IVUliWI Id 7-e N & P -C h a n n e l Single JFETs FN 4119A N N N N FN4392 FN4393 N 2N4220A N N N N N N 2N4221A 2N4222 2N4338 2N 4339 2N4340 2N4341 2N4867 2N4867A 2N4868 2N4868A 2N4869 2N4869A J230 J230-18

2N4867

Abstract: 2N4867A 2N4868 2N4868A 2N4869 2N4869A SMP4869A NJ16 SMP4867 SMP4867A
Contextual Info: Databook.fxp 1/14/99 12:00 PM Page B-17 B-17 01/99 2N4867, 2N4867A, 2N4868, 2N4868A, 2N4869, 2N4869A N-Channel Silicon Junction Field-Effect Transistor Absolute maximum ratings at TA = 25¡C ¥ Audio Amplifiers Reverse Gate Source & Reverse Gate Drain Voltage

Contextual Info: [j^ [D tUJ TF ©ÄTTM,© LOW P O W E R FIELD EFFE C T T R A N S IS T O R S L@W [ M © D © [ 1  I l [ p y i F D [ l [ ^ s ' M ° © [ n l  [ M [ M I [ L [ F i T T É Type Number Case Style (T O -) Geometry BVgss Min (V) Ciss Max (pF) Crss Max (pF) Vgs (off)

IC HXJ 2038

Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

sn76131

Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Contextual Info: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157

n-channel fet to-92

Abstract: 2N4117A fet j310 2N5464 j310 fet 2N5485 FET J202 2N4119 FET 2N5459 2n4117 jan
Contextual Info: 1. DISCRETES Amplifiers— Junction FET Ordering Information Preferred Part Number Bis min Package n mho •g s s Vp m ín/m ax ta s s m in/max mA V max BVq s s min max Crss max n max pA V pF PF n v / s /líz" 4 C |SS N -c h a n n e l: 2N3684 TO-72 2N3685

2N4303

Abstract: sd215 siliconix 2n4416 jfet JFET u1898 cross 2N4381 2N4393 JFET 2N3330 2n4267 2N4302
Contextual Info: si6halFET Product Specifications 7-io N & P-Channel Single JFETs Siliconix N N N P P P 8.0 6.0 11.5 6.5 3.2 5.0 5.0 9.5. 20 20 40 40 40 30 30 30 _ - _ _ _ _ _ _ _ 45 45 - _ _ - _ 0.9 2.0 0.2 0.44 1.0 2.0 5.0 1.0 2.0 0.5 0.1 3.0 I5.0 15.0 _ 25 75 150 _ 90 60

2N6658

Abstract: J201 Replacement 1280A PN4304 2N3323 2N4119 JFET 2N4341 2n4416 jfet 2N6568
Contextual Info: T P r o d u c t S p e c i f i c a t i o n s C o n fd GENERAL Product Specifications DEVICE lUT sìgIì ì ì F E PURPOSE —I —1 G EO M ETRY (Section 4) . , X X z z z z z z z z z z z z z z z z ù - o i z z z z z z 'z z

EATON CM20A

Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268
Contextual Info: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid­ ing complete service, fast delivery and in-depth inventory. Our main

BF195 equivalent

Abstract: bf197 2N3680 BF173 transistor bf 175 BC413 BFY39 BF256 transistor bf194 ke4416
Contextual Info: Introduction This is N ational S em iconducto r's latest handbook on discrete sem i­ co nd u ctor devices. Y o u w ill notice th at the co m p any has added more than 350 transistor part numbers and three p ro d u ct fam ilies since pub lication o f the last handbook in 1971. M any o f these new products

2N4867A

Abstract: 2N4867 "TO-72 package" J201 DS
Contextual Info: SILICONIX INC läE D C T -S ilic o n ix JL M in c o rp o ra te d • Ô2S4735 GD13Ö3Ö 7 2N4867 SERIES N-Channel JFETs The 2N4867 Series of n-channel JFETs Is designed for sensitive amplifier stages at low to mid frequencies. For applications requiring the lowest

2n4889

Abstract: 2N4858 TEXAS 2N4418 2sa777 2n4891 2N4917 2SA8150 6ae diode 2N4417 2N6556
Contextual Info: POWER SILICON PNP Item Number Part Number I C 5 10 >= 20 25 30 BCX53 MH0816 MH0818 MM4006 M0818 M0818 MM4031 ST4031 BCX53•6 ZTX552 BOW60 NS0204 2SA780AK BSV17·10 BSV17·10 BSV17·10 BSV17·6 BSV17·6 ~l,;X:';HU 35 40 45 50 2SA777 2SA777 B0418 2N6555 2SB1042M

2N6449

Abstract: MIXER U350 TR320 2N4861 2N4858A 2n4117 equivalent J231 2N5461 2N6450 CD860 SMP5116
Contextual Info: Databook.fxp 1/13/99 2:09 PM Page B-3 B-3 01/99 2N3821, 2N3822 N-Channel Silicon Junction Field-Effect Transistor Absolute maximum ratings at TA = 25¡C ¥ VHF Amplifiers ¥ Small Signal Amplifiers Reverse Gate Source & Reverse Gate Drain Voltage Continuous Forward Gate Current

siliconix FET DESIGN

Abstract: Siliconix FET Siliconix "fet" 2N4340 2N4341 2N4869 high impedance current sources -rs siliconix DESIGN idea high voltage constant current source Siliconix design
Contextual Info: DI71-1 H Siliconix DESIGN IDEA The FET Constant Current Source INTRODUCTION The combination of low associated operating voltage and high output impedance make the FET attractive as a con­ stant current source. An adjustable current source may be built with a FET, a variable resistor and a small battery,

LM1011N

Abstract: JRC386D X0238CE UA78GKC M51725L MJ13005 AN6677 HA11749 MN8303 sn76131n
Contextual Info: TCG/NTE/ECG To JEDEC and Japanese ECG/TCG/NTE ECG10 ECG11 ECG12 ECG13 ECG14 ECG15 ECG16 ECG17 ECG18 ECG19 ECG20 ECG21 ECG22 ECG23 ECG24 ECG25 ECG26 ECG27 ECG28 ECG29 ECG30 ECG31 ECG32 ECG33 ECG34 ECG35 ECG36 ECG37 ECG38 ECG39 ECG40 ECG41 ECG42 ECG43 ECG44

E112 jfet

Abstract: siliconix E412 NPD5564 jfet e300 NPD5566 DATA SHEET OF FET BFW10 E402 dual jfet E430 jfet E310 JFET N NPD5565
Contextual Info: Selection Guide and Cross Reference Linear Integrated Systems SMALL SIGNAL DISCRETE SEMICONDUCTORS JFETs DMOS Switches BJTs MOSFETs Linear Integrated Systems 4042 Clipper Court • Fremont, CA 94538 • www.linearsystems.com Tel: 510 490-9160 • Toll Free: 800 359-4023 • Fax: 510 353-0261

2N5592-2N5594

Abstract: 2N5592
Contextual Info: N -C H A N N E L JU N C TIO N FET CHIP NUMBER CONTACT METALLIZATION Top Contact: > A Aluminum .024" 0.610mm 12,000 Backside Contact: 3,000 A G old ASSEMBLY RECOMMENDATIONS .019" (0.483mm) It is advisable that: a) the die be eutectically mounted with gold silicon preform 98/2%.

IN5314

Abstract: IN5309 IN5286 2N5163 2NB906 IN5313 U1897E 2N3456 UC4250 in5297
Contextual Info: 95D 02926 8368602 SOLITRON DEVICES INC SOLITRON DEVICES INC "ts f - z- f de I " a a tf tto a ooos^ab ~ Devices, Inc L O W P O W E R F IE L D E F F E C T T R A N S I S T O R S Type N um ber C ase Style TO- Avol Min V/mV lb Max (nA) Ios. Max (nA) Vos Max (mV)

2NB906

Abstract: IN5313 2NB90 IN5286 IN5296 solitrondevices IN5302 in5287 IN5306 2N5902 TO-92
Contextual Info: 8 3 6 8 6 0 2 SO L ITRON D E V I C E S INC T - 2- 95D 0 2 9 2 6 S0LITR0N DEVICES INC D F Jfl3 b ö t,G 2 2.jr OOOSTEb M o [ M i r ©ÄTTÄ[L ( L O W P O W E R FIELD EFFECT T R A N S IS T O R S Devices, Inc © [P U C W O O lM tL Type Number Case Style

jrc386d

Abstract: SN76131N LM1011N ne545b HA1457W X0238CE upc1018c UA78GKC MJ13005 MN8303
Contextual Info: ECG/TCG/NTE ECG10 ECG11 ECG12 ECG13 ECG14 ECG15 ECG16 ECG17 ECG18 ECG19 ECG20 ECG21 ECG22 ECG23 ECG24 ECG25 ECG26 ECG27 ECG28 ECG29 ECG30 ECG31 ECG32 ECG33 ECG34 ECG35 ECG36 ECG37 ECG38 ECG39 ECG40 ECG41 ECG42 ECG43 ECG44 ECG45 ECG46 ECG47 ECG48 ECG49 ECG50