2N395 Search Results

Contextual Info: 2N3958 MONOLITHIC DUAL N-CHANNEL JFET The 2N3958 is a Low Noise, Low Drift, Monolithic Dual N-Channel JFET The 2N3958 family are matched JFET pairs for differential amplifiers. The 2N3958 family of general purpose JFETs is characterized for low and medium

2N3956

Abstract: 2N3958 equivalent 2N3957 TO71 package Siliconix JFET Pairs
Contextual Info: SILICONIX INC Ô2S473S 0013015 b 1ÖE D fX S ilic o n ix 2N3956 SERIES JL M N-Channel JFET Pairs “T-ZT7-2-7 The 2N3956 Series are monolithic designed for high performance amplification. JFET pairs differential PART NUMBER This series features tight matching,

NPD5566

Abstract: npd5565 NPD5566 Dual jfets 2N6485 2N3955 NATIONAL SEMICONDUCTOR NP05564 npds5564 2N5565 2N5906 NPD8303
Contextual Info: Dual JFETs bSQ1130 DO^^SDS bSO • NSCS NATL SEMICOND DISCRETE N Channel Vp Device G* (nimho) (V) Min Max M in M ax V q s i -2 VOS (m V) M ax Drift (jxV/C) A V es Max Match G* Match % % •dss Package 2N3955 1 4.5 1 3 10 25 5 5 TO-71 2N3956 1 4.5 1 3 15

2N3958 equivalent

Abstract: Dual N-Channel JFET 2N3958
Contextual Info: 2N3958 Vishay Siliconix Monolithic N-Channel JFET Dual PRODUCT SUMMARY VGS off (V) V(BR)GSS Min (V) gfs Min (mS) IG Max (pA) jVGS1 – VGS2j Max (mV) –1.0 to –4.5 –50 1 –50 25 FEATURES BENEFITS APPLICATIONS D D D D D D D Tight Differential Match vs. Current

TRANSISTOR 2n3955

Abstract: 2N3954 2N3954A 2N3955A 2N3955 2N3956 2N3954-2N3958 2n3957 transistor 2N3 X2N3954
Contextual Info: C A L O G I C CORP 4ÔE D 1AM432B OOOOBTb 4 CGC W U IO Q Iv w CORPORATION T n n 2N3954-2N3958/2N3954A /2N3955A FEATURES • • • • • ABSOLUTE MAXIMUM RATINGS Ta = 25°C unless otherwise noted Low Offset and Drift Low Capacitance Low Noise Superior Tracking Ability

MRF9331

Abstract: 2SC3029 2N2206 2SC2821 MMBR5031 K918 MMT3960A 2n3681 340t 2SC330
Contextual Info: RF LOW-POWER SILICON NPN Item Number Part Number V BR CEO 5 10 2N2318 2N2320 2N3953 MMT3960 lBFT24 2N5186 ST6110 ST6125 ST6120 MMT807 ~~~~~~1 15 20 2N2967 2N3010 2N2475 2N709 MM1748A 2N3832 2N709A 2N2784 ~~~~;~ 25 30 2N2257 2N3681 2SC3011 2SC2876 2SC3301 MRF9331

2N3954

Abstract: 2N3956 2N3955 TRANSISTOR 2n3955 2n3956 equivalent transistor NJ16 2N3954 Transistor
Contextual Info: Databook.fxp 1/14/99 11:29 AM Page B-5 B-5 01/99 2N3954, 2N3955, 2N3956 N-Channel Dual Silicon Junction Field-Effect Transistor Absolute maximum ratings at TA = 25¡C ¥ Low and Medium Frequency Differential Amplifiers ¥ High Input Impedance Amplifiers 2N3954

Contextual Info: 2N3955 MONOLITHIC DUAL N-CHANNEL JFET The 2N3955 is a Low Noise, Low Drift, Monolithic Dual N-Channel JFET The 2N3955 family are matched JFET pairs for differential amplifiers. The 2N3955 family of general purpose JFETs is characterized for low and medium

Contextual Info: 2N3956 MONOLITHIC DUAL N-CHANNEL JFET The 2N3956 is a Low Noise, Low Drift, Monolithic Dual N-Channel JFET The 2N3956 family are matched JFET pairs for differential amplifiers. The 2N3956 family of general purpose JFETs is characterized for low and medium

2N3958 equivalent

Contextual Info: 2N3958 Monolithic N-Channel JFET Dual Product Summary VGS off (V) V(BR)GSS Min (V) gfs Min (mS) IG Max (pA) jVGS1 – VGS2j Max (mV) –1.0 to –4.5 –50 1 –50 25 Features Benefits Applications D D D D D D D Tight Differential Match vs. Current D Improved Op Amp Speed, Settling Time

Contextual Info: 2N3958 Vishay Siliconix Monolithic N-Channel JFET Dual PRODUCT SUMMARY VGS off (V) V(BR)GSS Min (V) gfs Min (mS) IG Max (pA) jVGS1 – VGS2j Max (mV) –1.0 to –4.5 –50 1 –50 25 FEATURES BENEFITS APPLICATIONS D D D D D D D Tight Differential Match vs. Current

2N5521

Abstract: 2N5562 2N5563
Contextual Info: [PMEHUKgTT ÄTTÄ[L LO W P O W E R FIELD EFFECT T R A N S IS T O R S Case Style Typ« Number (TO - Geometry BVgss Min (V) Ciss Max (pF) Vgss(off) Min Max (V) Idss Yfs Min Max (mA) Min Max (UMhos) 2N3921 2N3922 2N3954 2N3954A 2N3955 71 71 71 71 71 FN3.6

Contextual Info: 2N3954A MONOLITHIC DUAL N-CHANNEL JFET The 2N3954A is a Low Noise, Low Drift, Monolithic Dual N-Channel JFET The 2N3954A family are matched JFET pairs for differential amplifiers. The 2N3954A family of general purpose JFETs is characterized for low and medium

Contextual Info: B 6 9 -9 7 2N3957, 2N3958 ^ ^ H A N N E ^ U A ^ iu C O M U N C T IO ^ T E ^ ^ F F E a ^ K A N S IS T O R • LOW AND MEDIUM FREQUENCY DIFFERENTIAL AMPLIFIERS • HIGH INPUT IMPEDANCE AMPLIFIERS Absolute maximum ratings at TA = 25°C Reverse Gate Source & Reverse Gate Drain Voltage

Contextual Info: 2N3953 Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V) V(BR)CBO (V)15 I(C) Max. (A)30m Absolute Max. Power Diss. (W)200m Minimum Operating Temp (øC) Maximum Operating Temp (øC)200þ I(CBO) Max. (A)100n @V(CBO) (V) (Test Condition)10

2N3958 equivalent

Abstract: 2N3958
Contextual Info: 2N3958 Vishay Siliconix Monolithic N-Channel JFET Dual PRODUCT SUMMARY VGS off (V) V(BR)GSS Min (V) gfs Min (mS) IG Max (pA) jVGS1 – VGS2j Max (mV) –1.0 to –4.5 –50 1 –50 25 FEATURES BENEFITS APPLICATIONS D D D D D D D Tight Differential Match vs. Current

TRANSISTOR 2n3955

Abstract: 2N3955
Contextual Info: 2N3955 MONOLITHIC DUAL N-CHANNEL JFET The 2N3955 is a Low Noise, Low Drift, Monolithic Dual N-Channel JFET The 2N3955 family are matched JFET pairs for differential amplifiers. The 2N3955 family of general purpose JFETs is characterized for low and medium

2N3958

Contextual Info: 2N3958 MONOLITHIC DUAL N-CHANNEL JFET The 2N3958 is a Low Noise, Low Drift, Monolithic Dual N-Channel JFET The 2N3958 family are matched JFET pairs for differential amplifiers. The 2N3958 family of general purpose JFETs is characterized for low and medium

2N3958

Abstract: SST401 DG 7-32
Contextual Info: 2N3958 Vishay Siliconix Monolithic N-Channel JFET Dual PRODUCT SUMMARY Vgs oH (V) V (BR)GSS -1 .0 to -4 .5 Min (V) gfs Min (mS) lG Max (pA) |VGsi - VGS2] Max (mV) -5 0 25 1 -5 0 FEATURES BENEFITS APPLICATIONS • Monolithic Design • Tight Differential Match vs. Current

2sk82

Abstract: 2SK68A 2SK76 2sk77 datasheet 2sk97 2SK41 Equivalent FD1840 2SK44 equivalent 2SK97 2SK40
Contextual Info: Absolutes maximum ratings Ta=25ºC PartNumber V* VGS* IG ID Pd/Pch Electrical characteristics (Ta=25ºC) IDSS(mA) gm(mS) Tj/Tch min max (V) UN07 2N3954 (FD1 E-400 FD1840 mode (V) mode (mA) (mA) (mW) (ºC) GDO O 10 50 250 125 100 50 VDS -50 GD 250/unit

Contextual Info: SPRAGUE/S EM IC ON D GROUP 851 4019 SPRAGUE, ^ D • S E M I C O N D S / ICS 93D 03616J METAL-CASE JUNCTION FIELD-EFFECT TRANSISTORS N-Channel JFETs Monolithic Dual Devices ELECTRICAL CHARACTERISTICS at TA = 25°C loss V gS[oH) Igss V BHJGSS Device Type 2N3954

NPD5566

Abstract: NPDS5564 2N5911 2N6485 SOIC-8
Contextual Info: N Channel Vp Device V Min Max Gfc V Q81-2 (mmho) Min Max VOS (mV) Max Drift QM C) AVgs Max ' ' ' •dss ßfc Match % Match % Package 2N3955 1 4.5 1 3 10 25 5 5 TO-71 2N3956 1 4.5 1 3 15 50 5 5 TO-71 2N3958 1 4.5 1 3 25 100 15 15 TO-71 2N5197 0.7 4.0 1 4

2N3958

Abstract: 2N3957 2N3958 equivalent 2n3958 datasheet NJ16
Contextual Info: Databook.fxp 1/14/99 11:30 AM Page B-6 B-6 01/99 2N3957, 2N3958 N-Channel Dual Silicon Junction Field-Effect Transistor Absolute maximum ratings at TA = 25¡C ¥ Low and Medium Frequency Differential Amplifiers ¥ High Input Impedance Amplifiers At 25°C free air temperature:

NPD5564

Abstract: NPD5566 NPD8303 npd5565 2N5565 T071 2N5906 dual jfets NPD5566 Dual jfets
Contextual Info: Dual JFETs • b5D1130 DD^^SDS bSD « N S C S NATL SEHICOND DISCRETE N Channel vP Device (V) Min Max G* VGS1-2 (mmho) Min Max Vos (mV) Max Drift (nV/C) A V bs Max ßfc ■oss Match Match % % Package 2N3955 1 4.5 1 3 10 25 5 5 TO-71 2N3956 1 4.5 1 3 15 50