2MBX16 Search Results

Contextual Info: M29W320DT M29W320DB 32 Mbit 4Mbx8 or 2Mbx16, Non-uniform Parameter Blocks, Boot Block , 3V Supply Flash memory Feature summary „ Supply Voltage – VCC = 2.7V to 3.6V for Program, Erase and Read – VPP =12V for Fast Program (optional) „ Access time: 70, 90ns

N04C1630E3AM

Abstract: N04C1630E3AM-7BI N04C1630E3AM-7TI
Contextual Info: N04C1630E3AM NanoAmp Solutions, Inc. 1982 Zanker Road, San Jose, CA 95112 ph: 408-573-8878, FAX: 408-573-8877 www.nanoamp.com Preliminary 32x04 Combination Memory Multi-Chip Package MCP 32Mb (2Mbx16) Dual Bank Flash Memory plus 4Mb (256Kbx16) SRAM 3.0V, 70ns Access Time, 66-Ball FBGA, Industrial Temperature Range

m29dw324

Contextual Info: M29DW324D Flash Memory 4Mbx8 or 2Mbx16, Boot Block, Dual Bank Flash Memory Division STMicroelectronics Overview PRODUCT MARKET SEGMENT 32 Mbit Organization: 4Mb x8 or 2Mb x16 – Consumer and Telecom applications Dual Bank, Boot Block 3V Power Supply Flash Device

M29W320

Contextual Info: M29W320ET M29W320EB 32 Mbit 4Mbx8 or 2Mbx16, Uniform Parameter Blocks, Boot Block 3V supply Flash memory Feature summary • Supply voltage – VCC = 2.7V to 3.6V for Program, Erase and Read – VPP =12V for Fast Program (optional) ■ Access times: 70, 90ns

M29W320DT

Abstract: Numonyx JESD97 M29W320D M29W320DB TFBGA48
Contextual Info: M29W320DT M29W320DB 32 Mbit 4Mbx8 or 2Mbx16, Non-uniform Parameter Blocks, Boot Block , 3V Supply Flash memory Feature summary • Supply Voltage – VCC = 2.7V to 3.6V for Program, Erase and Read – VPP =12V for Fast Program (optional) ■ Access time: 70, 90ns

N08C1630E3AM

Abstract: N08C1630E3AM-7BI N08C1630E3AM-7TI 32x08
Contextual Info: N08C1630E3AM NanoAmp Solutions, Inc. 1982 Zanker Road, San Jose, CA 95112 ph: 408-573-8878, FAX: 408-573-8877 www.nanoamp.com Preliminary 32x08 Combination Memory Multi-Chip Package MCP 32Mb (2Mbx16) Dual Bank Flash Memory plus 8Mb (512Kbx16) SRAM 3.0V, 70ns Access Time, 66-Ball FBGA, Industrial Temperature Range

a1t 75

Abstract: 512 kbyt memory RASH 1133B intel 290000
Contextual Info: _ SHARP REFERENCE P H U U U C 'I P H t VIEW R e v 1.1 LH28F320S3-L11/14 32-MBIT 4MBx8/2MBx16 Smart 3 Flash MEMORY • Smart 3 Technofogy — 2.7V or 3.3V Vcc — 2.7V, 3.3V or 5V VPP ■ Hlgh-Density Symmetrically-Blocked Architecture — Sixty-four 64-Kbyte Erasable Blocks

m29w32

Abstract: JESD97 M29W320E M29W320EB M29W320ET TFBGA48
Contextual Info: M29W320ET M29W320EB 32 Mbit 4Mbx8 or 2Mbx16, Uniform Parameter Blocks, Boot Block 3V supply Flash memory Features • Supply voltage – VCC = 2.7V to 3.6V for Program, Erase and Read – VPP =12V for Fast Program (optional) ■ Access times: 70, 90ns ■

Contextual Info: M29W320ET M29W320EB 32 Mbit 4Mbx8 or 2Mbx16, Uniform Parameter Blocks, Boot Block 3V supply Flash memory Features „ Supply voltage – VCC = 2.7V to 3.6V for Program, Erase and Read – VPP =12V for Fast Program (optional) „ Access times: 70, 90ns „ Programming time

intel 290000

Contextual Info: PRELIMINARY SHARP PRODUCT PREVIEW Rev. 1.0 LH28F320SK-L90/12 32-MBIT 4MBx8/2MBx16 SmartVoltage Flash MEMORY • SmartVoltage Technology — 2.7V, 3.3V or 5V Vcc — 2.7V, 3.3V or 5V VPP ■ Common Flash Interface (CFI) Universal & Upgradable Interface ■ Scalable Command Set (SCS)

Contextual Info: M29W320ET M29W320EB 32 Mbit 4Mbx8 or 2Mbx16, Uniform Parameter Blocks, Boot Block 3V supply Flash memory Features „ Supply voltage – VCC = 2.7V to 3.6V for Program, Erase and Read – VPP =12V for Fast Program (optional) „ Access times: 70, 90ns „ Programming time

pf 4fl datasheet

Abstract: phase controller L120 intel 290000
Contextual Info: SHARP |REFERENCE ‘ PRODUCT PREVIEW Rev. 1.1 LH28F320S5-L90/12 32-MBIT 4MBx8/2MBx16 Sm art 5 Flash MEMORY • Smart 5 Technology — 5V Vcc — 5V VPP ■ High-Oensity Symmetrically-Blocked Architecture — Sixty-four 64-Kbyte Erasable Blocks ■ ■ Enhanced Data Protection Features

Contextual Info: M29DW323D Flash Memory 4Mbx8 or 2Mbx16, Boot Block, Dual Bank Flash Memory Division STMicroelectronics OVERVIEW MARKET SEGMENT PRODUCT 32 Mb Flash memory Organization: 4Mb x8 or 2Mb x16, – Consumer and Telecom applications Dual Bank, Boot Block 3V Power Supply device.

N08C1630E3AM-7BI

Abstract: N08C1630E3AM N08C1630E3AM-7TI
Contextual Info: N08C1630E3AM NanoAmp Solutions, Inc. 1982 Zanker Road, San Jose, CA 95112 ph: 408-573-8878, FAX: 408-573-8877 www.nanoamp.com Advance Information Low Voltage, Extended Temperature 32Mb FLASH and 8Mb SRAM Combo Memory 2Mbx16 bit Flash + 512Kbx16 bit SRAM OVERVIEW & FEATURES

M29W320D

Abstract: M29W320DB M29W320DT JESD97 TFBGA48
Contextual Info: M29W320DT M29W320DB 32 Mbit 4Mbx8 or 2Mbx16, Non-uniform Parameter Blocks, Boot Block , 3V Supply Flash memory Feature summary • Supply Voltage – VCC = 2.7V to 3.6V for Program, Erase and Read – VPP =12V for Fast Program (optional) ■ Access time: 70, 90ns

M29W320E

Abstract: M29W320EB m29w320et JESD97 TFBGA48
Contextual Info: M29W320ET M29W320EB 32 Mbit 4Mbx8 or 2Mbx16, Uniform Parameter Blocks, Boot Block 3V supply Flash memory Features • Supply voltage – VCC = 2.7V to 3.6V for Program, Erase and Read – VPP =12V for Fast Program (optional) ■ Access times: 70, 90ns ■

N08C1630E3BM-7BI

Abstract: N08C1630E3BM-7TI
Contextual Info: N08C1630E3BM NanoAmp Solutions, Inc. 1982 Zanker Road, San Jose, CA 95112 ph: 408-573-8878, FAX: 408-573-8877 www.nanoamp.com Advance Information 32x08 Combination Memory Multi-Chip Package MCP 32Mb (2Mbx16) Dual Bank Flash Memory plus 8Mb (512Kbx16) PSRAM

FBGA64

Abstract: 3F001
Contextual Info: M29W320ET M29W320EB 32 Mbit 4Mbx8 or 2Mbx16, Uniform Parameter Blocks, Boot Block 3V supply Flash memory Features „ Supply voltage – VCC = 2.7V to 3.6V for Program, Erase and Read – VPP =12V for Fast Program (optional) „ Access times: 70, 90ns „ Programming time

N04C1630E3AM

Abstract: N04C1630E3AM-7BI N04C1630E3AM-7TI
Contextual Info: N04C1630E3AM NanoAmp Solutions, Inc. 1982 Zanker Road, San Jose, CA 95112 ph: 408-573-8878, FAX: 408-573-8877 www.nanoamp.com Advance Information Low Voltage, Extended Temperature 32Mb FLASH and 4Mb SRAM Combo Memory 2Mbx16 bit Flash + 256Kbx16 bit SRAM OVERVIEW & FEATURES

Contextual Info: SHARP ]REFERENCE PRODUCT PREVIEW Rev. 1.1 LH28F320S5-L90/12 32-MBIT 4MBx8/2MBx16 Smart 5 Flash MEMORY • Smart 5 Technology — 5V Vcc — 5V VPP ■ High-Density Symmetrically-Blocked Architecture — Sixty-four 64-Kbyte Erasable Blocks ■ Common Flash Interface (CFI)

DDR333

Abstract: DDR400 K4H281638E-TCCC
Contextual Info: DDR SDRAM 128Mb E-die x8, x16 DDR SDRAM 128Mb E-die DDR400 SDRAM Specification Revision 1.3 Rev. 1.3. September. 2003 DDR SDRAM 128Mb E-die (x8, x16) DDR SDRAM 128Mb E-die Revision History Revision 1.0 (February, 2003) - First release Revision 1.1 (February, 2003)

Contextual Info: FMP3217CAx CMOS LPRAM Document Title 2M x 16 bit Super Low Power and Low Voltage Full CMOS RAM Revision History Revision No. 0.0 History Draft date Initial Draft Remark Oct,17th, 2007 1 Revision 0.0 Oct. 2007 FMP3217CAx CMOS LPRAM 2M x 16 bit Super Low Power and Low Voltage Full CMOS RAM

A0-A21

Abstract: LH28F320S3HNS-L11
Contextual Info: PRODUCT SPECIFICATIONS Integrated Circuits Group LH28F320S3HNS-L11 Flash Memory 16M 2MB x 8 / 1MB × 16 (Model No.: LHF32K03) Spec No.: EL108029A Issue Date: December 17, 1998 sharp LHF32K03 ●Handle this document carefully for it contains material protected by international copyright

Contextual Info: DDR SDRAM 128Mb E-die x8, x16 DDR SDRAM 128Mb E-die DDR400 SDRAM Specification Revision 1.2 Rev. 1.2 Mar. 2003 DDR SDRAM 128Mb E-die (x8, x16) DDR SDRAM 128Mb E-die Revision History Revision 1.0 (February, 2003) - First release Revision 1.1 (February, 2003)