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    29E10 Price and Stock

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    Hammond Manufacturing 229E10

    transformer - power low volt pc mount
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Master Electronics 229E10
    • 1 -
    • 10 $11.28
    • 100 $9.48
    • 1000 $8.61
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    Newark 229E10 Bulk 1
    • 1 $14.38
    • 10 $12.53
    • 100 $10.58
    • 1000 $10.09
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    RS 229E10 Bulk 1
    • 1 $14.38
    • 10 $13.52
    • 100 $13.09
    • 1000 $13.09
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    Powell Electronics 229E10 25 1
    • 1 $9.34
    • 10 $9.34
    • 100 $8.18
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    WeEn Semiconductor Co Ltd BYW29E-100,127

    Diode Switching 100V 8A 2-Pin(2+Tab) TO-220AC Rail - Rail/Tube (Alt: BYW29E-100,127)
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    Avnet Americas BYW29E-100,127 Tube 28 Weeks 6,000
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    TME BYW29E-100,127 477 1
    • 1 $0.78
    • 10 $0.47
    • 100 $0.37
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    Avnet Silica BYW29E-100,127 3,000 25 Weeks 1,000
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    EBV Elektronik BYW29E-100,127 4,000 25 Weeks 1,000
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    Eaton Cutler-Hammer S29N29E10N

    10Kva Type Ep Xfmr 1Ph 208V-208V Shield; |Eaton Cutler Hammer S29N29E10N
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    Newark S29N29E10N Bulk 1
    • 1 $5802.74
    • 10 $5362.03
    • 100 $5178.40
    • 1000 $5178.40
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    KEMET Corporation T429E106K020BC

    10.0Uf 20.0V; |Kemet T429E106K020BC
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    Newark T429E106K020BC Tape & Reel 2,500
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    KEMET Corporation T429E106K010AC

    10.0Uf 10.0V; |Kemet T429E106K010AC
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    Newark T429E106K010AC Tape & Reel 2,500
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    Find more 29E10 price and stock on Findchips.com

    29E10 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    BYW29E-100

    Abstract: T0220AB byw29e to3 HEATSINK BYW29E100
    Contextual Info: P H ILIP S INTERNATIONAL D ata sheet status Preliminary specification d ate of issue February 1991 G ENERA L DESCRIPTION Glass passivated, high efficiency, rugged epitaxial rectifier diodes in plastic envelopes, featuring low forward voltage drop, ultra-fast


    OCR Scan     		byw29e-100/150/200t0220ab711002b00242g+6t0220act0220byw29e-100byw29eto3 heatsinkbyw29e100 PDF

    COMPLEMENTARY PNP-NPN TRANSISTORS

    Abstract: 2N5354 2N5355 2N5356 2N5418 2N5419 2N5420 D29E1 D29E2 D33D21
    Contextual Info: SILICON SIGNAL SWITCHING & AMPLIFIER COMPLEMENTARY PNP-NPN PAIRS Type NPN PNP 2 N 5354 V c E fSATJ lllFE V Pt < 25°C ~(mW) (mA) Min. Max. @ 50mA, 2.5mA Max. (V) VcEO @ 1V, 50m A lc ’ Ccb @ 10V, 1M H z Typical (Pf) ft Typical (MHz) Package Outline No.


    OCR Scan     		2n53542n54182n53552n5419+102n53562n5420500mad33d26d29e7d33d27complementary pnp-npn transistorsd29e1d29e2d33d21 PDF

    Thyristor Xo 602 MA

    Abstract: 5A/1/Thyristor Xo 602 MA ah 90360 1N126 2N339 2N3201 transistor bf 175 germanium transistor epitaxial mesa 2N241
    Contextual Info: GENERAL ELECTRIC THYRISTOR AND DIODE CONDENSED SPECIFICATIONS GENERAL ELECTRIC THYRISTOR AND DIODE CONDENSED SPECIFICATIONS This chapter is primarily devoted to condensed specifications of General Electric’s thyristors, thyristor assemblies, trigger devices, and


    OCR Scan     		thyristor xo 602 ma5a/1/thyristor xo 602 maah 903601n126+62n3392n3201transistor bf 175germanium transistorepitaxial mesa2n241 PDF

    transistor pnp-npn

    Abstract: 2N6006 2N6000 2N6002 GET3013 GET3014 GET3638 GET3646 GET706 GET708
    Contextual Info: SELECTOR GUIDE TO 18 SILICON SIGNAL TRANSISTORS Current V c E O '~ '\ „ ^ I Voltage 50/iA to NPN 5mA 5mA rap GET706 GET708 to GET914 G ET3013 G ET3646 HPH : 2N6000 2N60Q2 2N6001 2N6S03 75m A 75m A t] 800m A PNP NPN pn p GET3014 GET3S3B GET3638A G ET3638


    OCR Scan     		50/ia800maget706get708+11get914get3013get3646ge1705cet708transistor pnp-npn2n60062n60002n6002get3014get3638 PDF

    IC 4098

    Abstract: 2N5355 HS5306 2N5354 2N5356 2N5418 2N5419 2N5420 D29E1 D29E2
    Contextual Info: SILICON SIGNAL SWITCHING & AMPLIFIER COMPLEMENTARY PNP-NPN PAIRS Type NPN PNP 2N5354 V c E fSATJ lllFE V Pt < 2 5 °C ~(mW) (mA) Min. M ax. @ 50mA, 2.5m A M ax. (V) V cEO @ 1V, 50mA lc ’ Ccb @ 10V, 1MHz T yp ical (Pf) ft T yp ical (MHz) Package Outline No.


    OCR Scan     		2n53542n54182n53552n5419+102n53562n5420500mad33d26d29e7d33d27ic 4098hs5306d29e1d29e2 PDF

    2N2222A 338

    Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
    Contextual Info: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK


    OCR Scan     		2cy172cy182cy192cy20+122cy21500ma2n2222a 338tfk 9492n1167halbleiter index transistorad161bsy19al103ac128tfk 404tfk 931 PDF

    LR8C

    Abstract: BYW29 T0220AB BYW29 diode rectifier
    Contextual Info: PHILIPS INTERNATIONAL « E , B 7ll062b 0021 S03 T m p m H T~Q3~ 7 D ata sh eet sta tu s Preliminary specification date of issu e February 1991 GENERAL DESCRIPTION G la ss passivated, high efficiency, rugged epitaxial rectifier diodes in plastic envelopes, featuring low


    OCR Scan     		711dfisbt0220abbyw29e-100/150/200t0220ac+4t0220lr8cbyw29byw29 diode rectifier PDF