294005 Search Results

Contextual Info: Extract from the online catalog EMG 75-LG/SET Order No.: 2940058 The illustration shows version EMG 75-LG Electronic housing set, consisting of electronic module and printed circuit termination blocks, pitch 5

Contextual Info: Extract from the online catalog EMG 75-LG/SET Order No.: 2940058 The illustration shows version EMG 75-LG Electronic housing set, consisting of electronic module and printed circuit termination blocks, pitch 5

memory eras

Abstract: intel EPROM
Contextual Info: iny ENGINEERING REPORT ER-20 September 1989 ETOX ll Flash Memory Technology 6 JASON ZILLER PRODUCT ENGINEERING Order Number: 294005-006 6-371 E T O X T M II FLASH MEMORY TECHNOLOGY CONTENTS page in t r o d u c t io n . 6-373

IN6AG

Abstract: 28F020 intel 28F020
Contextual Info: 28F020 2048K 256K x 8 CMOS FLASH MEMORY • Flash Electrical Chip-Erase — 2 Second Typical Chip-Erase ■ Quick-Pulse Programming Algorithm — 10 ¡is Typical Byte-Program — 4 Second Chip-Program ■ 100,000 Erase/Program Cycles ■ 12.0V ± 5 % Vpp

Contextual Info: in te l 28F020 2048K 256K x 8 CMOS FLASH MEMORY Flash Electrical Chip-Erase — 2 Second Typical Chip-Erase Quick-Pulse Programming Algorithm — 10 jas Typical Byte-Program — 4 Second Chip-Program 100,000 Erase/Program Cycles 12.0V ± 5 % Vpp High-Performance Read

M28F020-20

Abstract: MD28F020-20/B
Contextual Info: in te l ß o n iy ß iß O A O tfr M28F020 2048K 256K x 8 CMOS FLASH MEMORY Flash Electrical Chip-Erase — 5 Second Typical Chip-Erase Quick-Pulse Programming Algorithm — 10 jus Typical Byte-Program — 4 Second Typical Chip-Program 10,000 Erase/Program Cycles Minimum

Contextual Info: 28F256A 256K 32K x 8 CMOS FLASH MEMORY • Flash Electrical Chip-Erase — 1 Second Typical Chip-Erase ■ Quick-Pulse Programming Algorithm — 10 fis Typical Byte-Program — 0.5 Second Chip-Program ■ 100,000 Erase/Program Cycles ■ 12.0V ± 5 % Vpp

Contextual Info: ir v tJ . 28F256A 256K 32K x 8 CMOS FLASH MEMORY • Flash Electrical Chlp-Erase — 1 Second Typical Chip-Erase ■ Command Register Architecture for Microprocessor/Microcontroller Compatible Write Interface ■ Quick-Pulse Programming Algorithm — 10 /j.8 Typical Byte-Program

Contextual Info: A28F010 1024K 128K x 8 CMOS FLASH MEMORY (Automotive) a Extended Automotive Temperature Range: -40°C to + 125°C • Flash Memory Electrical Chip-Erase — 1 Second Typical Chip-Erase ■ Integrated Program/Erase Stop Timer B command Register Architecture for

Contextual Info: P R lO B M A IifR r ¡ n ie l M28F020 2048K 256K x 8 CMOS FLASH MEMORY Flash Electrical Chip-Erase — 5 Second Typical Chip-Erase Quick-Pulse Programming Algorithm — 10 /as Typical Byte-Program — 4 Second Typical Chip-Program 10,000 Erase/Program Cycles Minimum

8155 intel microcontroller architecture

Contextual Info: A28F010 1024K 128K x 8 CMOS FLASH MEMORY (Automotive) a Automotive Temperature Range: —40°C to + 125°C • Flash Memory Electrical Chip-Erase — 1 Second Typical Chip-Erase ■ Quick-Pulse Programming Algorithm — 10 jus Typical Byte-Program — 2 Second Chip-Program

28F001

Abstract: intel 28F001BXT
Contextual Info: in t e i, 28F001BX-T/28F001BX-B 1M 128K x 8 CMOS FLASH MEMORY • High Integration Blocked Architecture — One 8KB Boot Block w/Lock Out — Two 4KB Parameter Blocks — One 112KB Main Block ■ 10,000 Erase/Program Cycles Minimum Per Block ■ Simplified Program and Erase

SAL 41

Abstract: junost 603 MBA540 selen-gleichrichter RFT Dioden SERVICE-MITTEILUNGEN elko 50 uf KT 817 stassfurt R6C22
Contextual Info: SERVICE-MITTEILUNGEN VE B I N D U S T R I E V E R T R I E 8 R U N D F U N K U N D F E R N S E H E N ¡Rim ila r a d i o - t e l e v i s i o n ] Seite Dezember Sb 1981 1 - 4 Mitteilung aus dem VEB Fernsehgerätewerke "Friedr. Engels" Staßfurt I 4 Zusammenfassung technischer Änderungen beim.

TN28F010

Abstract: 29020
Contextual Info: 1024K 128K X 28F010 8 CMOS FLASH MEMORY • Flash Electrical Chlp-Erase — 1 Second Typical Chlp-Erase ■ Quick Pulse Programming Algorithm — 10 ¡is Typical Byte-Program — 2 Second Chip-Program ■ 100,000 Erase/Program Cycles ■ 12.0V ± 5 % Vpp

AS263

Abstract: 271066 l213d
Contextual Info: INTEL CORP UP/PRPHLS ' EQE |) • 4fi2bl7S OOfilSS? T ■ ¡ n y * M28F256 n?4(eHV2.7 256K (32K x 8) CMOS FLASH MEMORY M ilitary a Flash Electrical Chip-Erase ■ Command Register Architecture for Microprocessor/Microcontroller Compatible Write Interface

AP28F512-120

Contextual Info: 512K 64K X 8 A28F512 CMOS FLASH MEMORY (Automotive) Extended Automotive Temperature Range: -4 0 °C to +125°C Flash Electrical Chip-Erase — 1 Second Typical Chip-Erase Quick-Pulse Programming Algorithm — 10 juts Typical Byte-Program — 1 Second Chip-Program

28F512

Abstract: 28F512 input id intel 28f512 80C186 N28F512 P28F512 80C186 programming
Contextual Info: in te i 28F512 512K 64K x 8 CMOS FLASH MEMORY Flash Electrical Chip-Erase — 1 Second Typical Chip-Erase Quick-Pulse Programming Algorithm — 10 jus Typical Byte-Program — 1 Second Chip-Program 100,000 Erase/Program Cycles 12.0V ± 5 % Vpp H igh-Perform ance Read

SM28F001AX

Abstract: AX-200 29020 PPH 2222 36 64 mbit static ram simm
Contextual Info: in te i' SM28F001AX 1 MBYTE 512K x 16 CMOS FLASH SIMM High-Performance — 135 ns Maximum Access Time — 14.81 MB/s Read Transfer Rate 100,000 Rewrite Cycles Typical/ Component Flash Electrical Chip-Erase — 1 Second Typical Chip-Erase 16 jjls Typical Word Write

AN28F010-150

Abstract: AN28F010-120 28F010 80C186 A28F010 AP28F010-150 intel Automotive
Contextual Info: A28F010 1024K 128K x 8 CMOS FLASH MEMORY (Automotive) Y Automotive Temperature Range b 40 C to a 125 C Y Flash Memory Electrical Chip-Erase 1 Second Typical Chip-Erase Y Quick-Pulse Programming Algorithm 10 ms Typical Byte-Program 2 Second Chip-Program Y

F256A-200

Abstract: 28F256A P28F256A-150 N28F256A-120 28F256 2SF256 32-PIN 80C186 P28F256A-120
Contextual Info: in te l 28F256A 256K 32K x 8 CMOS FLASH MEMORY Flash Electrical Chip-Erase — 1 Second Typical Chip-Erase Quick-Pulse Programming Algorithm — 10/ j.s Typical Byte-Program — 0.5 Second Chip-Program 100,000 Erase/Program Cycles 12.0V ±5% VPP High-Performance Read

2SF512

Contextual Info: 28F512 D Q q -D Q 7 E R A S E V O LTAG E IN P U T / O U T P U T SW ITC H BUFFERS TO A R R A Y SO U R C E ST A T E C O N TR O L COMMAND R E G IST ER IN T EG R A T ED STO P T IM ER u PGM V O LTAG E SW ITC H C H IP E N A B L E O U T PU T E N A B L E CE# • DAT A

Contextual Info: MicroCon 0,8 mm Steckverbinder AUS. 04 | 09.2014 Originalgröße MicroCon 50 Pins Katalog D 074607 MicroCon - 0,8 mm Steckverbinder ZWEIREIHIGER STECKVERBINDER ALLGEMEINES MicroCon Feder- und Messerleiste Die zweireihige MicroCon-Baureihe im 0,8 mm Raster

29020

Contextual Info: in te i 28F010 1024K 128K x 8 CMOS FLASH MEMORY Flash Electrical Chip-Erase — 1 Second Typical Chip-Erase Quick Pulse Programming Algorithm — 10 ju-s Typical Byte-Program — 2 Second Chip-Program 100,000 Erase/Program Cycles 12.0V ± 5 % Vpp High-Performance Read

29024

Abstract: burndy burndy ms N28F010 28f010-200
Contextual Info: intd. ¡SM001FLKA 1 MBYTE 512K x 16 CMOS FLASH SIMM • High-Performance — 120 ns Maximum Access Time — 16.67 MB/s Read Transfer Rate ■ Standard 80-Pin Insertable Module — 0.050 Centerline Lead Spacing — Upgrade Path through 128M bytes ■ 10,000 Rewrite Cycles Minimum/