29024
Abstract: burndy burndy ms N28F010 28f010-200
Contextual Info: intd. ¡SM001FLKA 1 MBYTE 512K x 16 CMOS FLASH SIMM • High-Performance — 120 ns Maximum Access Time — 16.67 MB/s Read Transfer Rate ■ Standard 80-Pin Insertable Module — 0.050 Centerline Lead Spacing — Upgrade Path through 128M bytes ■ 10,000 Rewrite Cycles Minimum/
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sm001flka80-plnsm00180-pin+10sm001flka-120ism001flka-200er-20er-2429024burndyburndy msn28f01028f010-200
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85C220
Abstract: LIM EMS 4.0 zener 6352 transistor 6cn
Contextual Info: In te l APPLICATION NOTE AP-343 October 1990 Solutions for High Density Applications Using Intel Flash Memory MARKUS A. LEVY DALE ELBERT APPLICATIONS E N G IN E ER IN G IN TEL C O R PO R A TIO N Order Number: 292079-001 6-297 6 Solutions For High Density Applications
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ap-34385c220lim ems 4.0zener 6352+1transistor 6cn
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QA16
Abstract: SM28F001AX 29024
Contextual Info: intei ÌSM001FLKA 1 MBYTE 512K x 16 CMOS FLASH SIMM • High-Performance — 120 ns Maximum Access Time — 16.67 MB/s Read Transfer Rate ■ Standard 80-Pin Insertable Module — 0.050 Centerline Lead Spacing — Upgrade Path through 128M bytes ■ 10,000 Rewrite Cycles Minimum/
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sm001flka80-pinsm001flka-120sm001+9flka-200er-20er-2428f010rr-60ap-316qa16sm28f001ax29024
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28f010-200
Contextual Info: in te i ¡SM001FLKA 1 MBYTE 512K x 16 CMOS FLASH SIMM • High-Performance — 120 ns Maximum Access Time — 16.67 MB/s Read Transfer Rate ■ 10,000 Rewrite Cycles Minimum/ Component ■ Flash Electrical Chip-Erase — 1 Second Typical Chip-Erase ■ 16 p,s Typical Word Write
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sm001flka80-plnism001flka-120flka-200+7er-20er-2428f010rr-60ap-316ap-32528f010-200
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