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Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA General Purpose Transistors MMBT2907LT1 MMBT2907ALT1* COLLECTOR 3 PNP Silicon *Motorola Preferred Device 1 BASE 2 EMITTER MAXIMUM RATINGS 3 1 Rating Symbol 2907 2907A Unit Collector – Emitter Voltage VCEO –40 –60
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2222a pinout
Abstract: k27 transistor K27 npn 2222a MMDT2227-7-F K27 pnp transistor 2222a
Contextual Info: MMDT2227 Features & Benefits Mechanical Data • • • • • • • • Complementary Pairs One 2222A Type NPN One 2907A Type (PNP) Ideal for Low Power Amplification and Switching Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3)
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mmdt2227aec-q101ot363j-std-020+9mil-std-202ds301222222a pinoutk27 transistork27 npn2222ammdt2227-7-fk27 pnptransistor 2222a
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2907A EQUIVALENT
Abstract: MPQ2907A of ic 2907 MPQ2907 2N2906 2N2907 MPQ2906 MPQ2906A 2907A similar
Contextual Info: QUAD DUAL-IN-LINE PNP SILICON ANNULAR GENERAL-PURPOSE TRANSISTORS . . . designed for general-purpose VHF amplifier applications. switching circuits and DC to o Maximum Power Dissipation @ TA = 25°C — MPQ2906, MPQ2907 PD = 1.25 wattS — MPQ2906A, MPQ2907A
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mpq2906mpq2907mpq2906ampq2907a+62n29062n2907mp02906a2907a equivalentof ic 29072907a similar
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2907A EQUIVALENT
Abstract: 2222A 2907 transistor 4393 s0918 BFQ22 equivalent a 2907 SOR2369 S02907 bfr93
Contextual Info: m icropackaged transistors according to CNET specifications transistors en microboitier selon spécification CN ET Réf. C N E T Standard catalog product Produit catalogue standard TCH 918.3 TCH 918.5 SO R 918 S0 9 1 8 2N918 2N 918 TCH 2222.3 TCH 2222.5 S O R 2222
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2n918s0918s02222s02369+11s02907sor2907as028942907a equivalent2222a2907transistor 4393bfq22 equivalenta 2907sor2369bfr93
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2Sc945 equivalent
Abstract: 2SA733 equivalent 2SA733B 2sc1623 equivalent 2SC2002 equivalent 2SC1216 2SA603 2SK104 2SC923 2sc2001 equivalent
Contextual Info: 10. Specifications of MINI M O L D Device Typ« Number Regular /Reversal 2SA811 2SA812/2SA812R PNP Tran sistor NPN Tranlilto r Nearest Equivalent* ' M M BA811.M M BA812 | BCW29.SCW 30,BCW 69,8CW 70,MMBTA70 TO-92 Packaged Equivalent Page 2SA641 21 2SA733.BC556.BC5571BC558,BC559,BC560
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2sa8112sa812/2sa812r2sb624/2sb624r2s8736/2s8736r+16907a/ntm2907artm3906/ntm3906rba811ba8122sa6412sc945 equivalent2sa733 equivalent2sa733b2sc1623 equivalent2sc2002 equivalent2sc12162sa6032sk1042sc9232sc2001 equivalent
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BFY50 equivalent
Abstract: 2n2222 texas instruments CV7756 bfy51 equivalent CV7735 BFY52 equivalent equivalent of 2n2222 2N2222 npn small signal current gain 2n2222 equivalent 2n2484 2n2222 ti
Contextual Info: Discrete Semiconductors T exas In s t r u m e n t s Absolute Maximum Rating hFE at Collector Current CV Number Commercial Case Equivalent Outline Polarity VC B VCE V eb hFE V V V hFE Ic Min. fT MHz Converted to BS9300 Small Signal Planar CV continued Comments
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cv7722bfy50cv7723bfy51+14cv7724bfy52cv7725cv7726bfy50 equivalent2n2222 texas instrumentscv7756bfy51 equivalentcv7735bfy52 equivalentequivalent of 2n22222n2222 npn small signal current gain2n2222 equivalent 2n24842n2222 ti
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CV7756
Abstract: bc300 equivalent BFY50 equivalent 2N2222 npn small signal current gain BC142 equivalent CV7765 bfy51 equivalent CV7735 cv7766 2n1613 equivalent
Contextual Info: Discrete Semiconductors T e x a s In s t r u m e n t s Absolute Maximum Rating h F E at Collector Current CV Number Commercial Case Equivalent Outline Polarity V C B VCE V V V e b hFE hFE Ic Min. fT MHz Converted to B S 9 3 0 0 Small Signal Planar CV continued
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cv7722bfy50cv7723bfy51+14cv7724bfy52cv7725cv7726cv7756bc300 equivalentbfy50 equivalent2n2222 npn small signal current gainbc142 equivalentcv7765bfy51 equivalentcv7735cv77662n1613 equivalent
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C735
Abstract: C749 NPN C460 C644 BS9300 c495 C-725 CV7580 c496 c727
Contextual Info: 7 BS9000 Converted CV Case Outlines Small Signal Transistors . B S Type Number Com m ercial Equivalent Case Outline Polarity Ab solute Maximum Rating VCB V VCE V h F E at Co llecto r Current VEB V hFE min. hFE max. 1C mA M in. fT MHz Com m ents 0-76 0 -4 8 0
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bs90008s9300bs93002n2221a+122n2222a2n18932n1613c735c749npn c460c644c495c-725cv7580c496c727
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diac D30
Abstract: db3 diac bc 9013 marking 4d NPN ZN 5551 diode DIAC DB3 EQUIVALENT BZXS4C24V 8Z-2 9014 sot-23 ZT 5551
Contextual Info: Continental Device India Limited An IS/ISO 9002 & IECQ. certified manufacturer of quality discrete semiconductor components Surface Mount SOT-23 Semiconductors , , Transistors Z ener Diodes Switching and Schottky Diodes Quick Reference Data CONTINENTAL DEVICE INDIA LIMITED
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ot-23c-120conventn17112n1893+162n21022n2218a2n2219a2n30192n35032n3700diac d30db3 diacbc 9013marking 4d npnzn 5551 diodediac db3 equivalentbzxs4c24v8z-29014 sot-23zt 5551
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LB 122 transistor
Abstract: 2N2907A surface mount 2N2907A HCT2907A JAN2N2907A ma131
Contextual Info: OPTEK TEC H NO LO GY INC 4flE » • L^SSaO 000145 1 110 ■ Product Bulletin OTK _ £>j OPTEK M a y 1989 Surface Mount PNP General Purpose Transistor Type HCT2907A Features T 2/7 -Q°i Absolute Maximum Ratings TA = 25°C unless otherwise noted) • Surface mountable on ceramic or printed
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hct2907a2n2907amil-s-19500lb 122 transistor+32n2907a surface mountjan2n2907ama131
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2907A EQUIVALENT
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Quad General Purpose Transistors MMPQ2907 MMPQ2907A PNP Silicon 1 16 2 15 3 14 4 13 5 12 6 11 7 10 8 9 16 1 CASE 751B–05, STYLE 4 SO–16 MAXIMUM RATINGS Rating Collector – Emitter Voltage Symbol MMPQ2907 MMPQ2907A
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NK60Z
Abstract: 2907 TRANSISTOR PNP TRANSISTOR REPLACEMENT ECG transistor P43 smd transistor P45 smd transistor SMD p81 smd diode H05 smd transistor l42 N50C3 2222A SMD
Contextual Info: DN-H05 Design Note 56W Off-line, 120VAC with PFC, 160V, 350mA Load, Dimmer Switch Compatible LED Driver Specifications AC line voltage 100 - 135 VAC LED string voltage 20 – 160V LED current 350mA Switching frequency 63kHz - @ VOUT = 160VDC 92kHz - @ VOUT = 20VDC
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dn-h05120vac350ma63khz+14160vdc92khz20vdc180vdcnk60z2907 transistor pnptransistor replacement ecgtransistor p43 smdtransistor p45 smdtransistor smd p81smd diode h05smd transistor l42n50c32222a smd
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C495 transistor
Abstract: transistor c495 C735 c495 bc300 equivalent NPN C460 BFY50 equivalent u c756 2n-2411 2n1613 equivalent
Contextual Info: 7 Metal Can High Current NPN Am plifiers Case Outlines Maximum ratinas Device Type ¡5 o £L BV Case BV BV hFEI CBO CEO EBO ICM mA V V V hFE2 1C Ic mA min. max. mA BFT39 BFT40 BFT41 NPN NPN NPN T039 T039 T039 90 70 60 80 60 50 5 5 5 1000 1000 1000 100 50 100 75
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bft39bft40bft41bft29+16bft30bft31bfy50bfy51bfy52bft53c495 transistortransistor c495c735c495bc300 equivalentnpn c460bfy50 equivalentu c7562n-24112n1613 equivalent
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C495 transistor
Abstract: c735 2N1893 equivalent c644 C735 O 2N2222 hfe C749 2N3570 transistor C633 NPN C460
Contextual Info: Metal Can 0-76 Case BV CBO V V V 30 25 25 15 15 13 3 3 3 0 -4 8 0 2N3570 2N3571 2N3572 *T t i 4-95JÍ -12-7 h min I—-5 -3 Dimensions in mm NPN NPN NPN T072 T072 T072 Maximum ratin as BV BV CEO EBO hFE1 • mA min. max. f 50 50 50 5 5 5 150 200 300 1000 450
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4-95j02n35702n35712n3572+142n9182n42522n4253bs93002n2219ac495 transistorc7352n1893 equivalentc644c735 o2n2222 hfec749transistor c633npn c460
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C736
Abstract: C495 transistor bc303 equivalent 2N2222A 026 C735 bc143 equivalent bc143 C644 equivalent transistor 2N1711 transistor c633
Contextual Info: Metal Can 0-76 Case BV CBO V V V 30 25 25 15 15 13 3 3 3 0 -4 8 0 2N3570 2N3571 2N3572 *Tt i 4-95JÍ -12-7 h min I—-5 -3 Dimensions in mm NPN NPN NPN T072 T072 T072 Maximum ratin as BV BV CEO EBO hFE1 • mA min. max. f 50 50 50 5 5 5 150 200 300 1000 450
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4-95j02n35702n35712n3572+152n9182n42522n4253bs93002n2219ac736c495 transistorbc303 equivalent2n2222a 026c735bc143 equivalentbc143c644equivalent transistor 2n1711transistor c633
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LP29801-XX
Abstract: LP2980-5 LP29801 E225Z l48a LP2980IM5X-3.8 LP2980 MA05A E475Z RM426
Contextual Info: A pril 1999 LP2980 Micropower SOT, 50 mA Ultra Low-Dropout Regulator General Description Features The LP2980 is a 50 mA, fixed-output voltage regulator de signed specifically to meet the requirem ents of battery-pow ered applications. • U ltra low dropout voltage
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lp2980ot-23lp29801-xxlp2980-5+7lp29801e225zl48alp2980im5x-3.8ma05ae475zrm426
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2N2222A zetex
Abstract: MAX715CNG motorola b6n MAX714 MAX715CWG MAX716CWI MAX716EWI MAX714CPE MAX714CWE MAX715
Contextual Info: 1 9 -4 5 0 7 ; R e v . 1; 3 /9 2 B a ttery-P ow ered Supply S y s te m s The M AX716 com bines circuitry for four low-dropout linear regulators, three D C -D C sw itching regulators, and powersu pervisory functions on a single IC. All but one regulator output is logic controlled so that loads m ay be shut down
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max714/715/716max716inpu40max716mji+11max716evkit2n2222a zetexmax715cngmotorola b6nmax714max715cwgmax716cwimax716ewimax714cpemax714cwemax715
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AC125K
Abstract: 6AN7 tungsram 3S035T-1 ecc83 application notes ECL86 DG 7-123 tungsram AC125UZ PENTODE pl 508 ot-400 tungsram
Contextual Info: TUNGSRAM 1 ELECTRON TUBES AND SEMI CONDUCTORS 1979 RADIO & TV RECEIVING TUBES OSCILLOSCOPE & MONITOR TUBES TRANSMITTING TUBES, RECTIFIERS & MICROWAVE TUBES SEMICONDUCTORS RECEIVING TUBES CONSUMER TYPES INDUSTRIAL TYPES VOLTAGE REGULATORS TY P E ASSO R TM EN T
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76665n76889nma748pcma709pc+16ja710pca711pcia712pca723pcha741pca747pcac125k6an7tungsram 3s035t-1ecc83 application notesecl86dg 7-123tungsramac125uzpentode pl 508ot-400 tungsram
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agilent pHEMT transistor
Abstract: pHEMT transistor atf541m4 ATF pHEMT ATF-541M4 ATF-55143 LL1608-F2N7S LL1608-FH2N7S LL1608-FH5N6K knife edge isolation schematic diagram ac power regulator
Contextual Info: High Intercept Low Noise Amplifier for the 1850 – 1910 MHz PCS Band using the Agilent ATF-541M4 Enhancement Mode PHEMT Application Note 1279 Introduction Agilent Technologies’ ATF-541M4 is a low noise enhancement mode PHEMT designed for use in low cost commercial applications in
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atf-541m4atf-55143atf-541xxagilent phemt transistor+7phemt transistor atf541m4atf phemtll1608-f2n7sll1608-fh2n7sll1608-fh5n6kknife edge isolationschematic diagram ac power regulator
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depletion mode
Abstract: ATF541M4 AN1279 2907A similar ATF-541M4 ATF-55143 LL1608-F2N7S LL1608-FH2N7S LL1608-FH5N6K 1279 transistor
Contextual Info: High Intercept Low Noise Amplifier for the 1850 – 1910 MHz PCS Band using ATF-541M4 Enhancement Mode PHEMT Application Note 1279 Introduction Avago Technologies’ ATF-541M4 is a low noise enhancement mode PHEMT designed for use in low cost commercial applications in the VHF through 6 GHz
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atf-541m45988-5520endepletion modeatf541m4+7an12792907a similaratf-55143ll1608-f2n7sll1608-fh2n7sll1608-fh5n6k1279 transistor
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ipmq 45
Abstract: 2907A EQUIVALENT VGA 65530
Contextual Info: #jß»! M |SK MMMQ V .n iiT 3 . 82C404C Dual Programmable Graphics Clock Generator Dual Programmable Graphics Clock Generator Two Independent Clock Outputs Ranging from: Tri-State Control Disables Oscillator Outputs for Test Purposes • 390 K H z -120 MHz 5.0V Operation
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82c404ckhz-12024-bit82c450+5f82c404cg00b7ipmq 452907a equivalentvga 65530
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TDC1048
Abstract: IS2076 74L5374 CI 74S04 UV 471 CX20202A-1 CXA1296P CXAI296P sony tv diagram
Contextual Info: CXA1296P SONY, 8-bit 20 MSPS Flash A/D Converter TTL I/O Description C X A 1 29 6P is an 8 -b it 2 0 MSPS high speed A /D converter IC. This IC is suitable fo r a wide range of applications w here A /D high speed operation is required. Features 8 -b it ± 1/2 LSB
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cxa1296p11/2lsb20msps410mw+8tdc1048cxai296pis207674l5374ci 74s04uv 471cx20202a-1sony tv diagram
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ipmq 45
Abstract: xtal 32khz VGA 65530 st 2n 2907a 65530 404B 404C 82C404C 82C450 intel 4040
Contextual Info: #jß»! |SK V .n iiT 3 M M M M Q . 82C404C Dual Programmable Graphics Clock Generator Dual Programmable Graphics Clock Generator Two Independent Clock Outputs Ranging from: Tri-State Control Disables Oscillator Outputs for Test Purposes • 390 K H z - 120 MHz 5.0V Operation
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82c404ckhz-12024-bit82c450+11f2c404cf82c404c000b775ipmq 45xtal 32khzvga 65530st 2n 2907a65530404b404cintel 4040
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ATF-10736
Abstract: AN-G005 ATF10236 ATF-10236 ATF10136 ATF-10136 HP346A MSA-0686 TK11650U TL05
Contextual Info: Using the ATF-10236 in Low Noise Amplifier Applications in␣ the UHF through 1.7 GHz Frequency Range Application Note 1076 Introduction GaAs FET devices are typically used in low-noise amplifiers in the microwave frequency region where silicon transistors can’t
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atf-10236atf-10736an-g005atf10236+6atf10136atf-10136hp346amsa-0686tk11650utl05
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