28DBM Search Results

Contextual Info: MICROWAVE POWER GaAs FET TOSHIBA MICROWAVE SEMICONDUCTORS TECHNICAL DATA JS9P05-AS FEATURES: •H IG H POWER P1dB=28dBm ■C H IP FORM IHIGH GAIN GldB= f = 38GHz RF PERFORMANCE SPECIF CATIONS CHARACTERISTICS Output Power at 1dB Compression Point Power Gain at 1dB

Contextual Info: AWT6309 HELP2TM AWS/KPCS CDMA 3.4V/28dBm Linear Power Amplifier Module Data Sheet - Rev 2.5 FEATURES • InGaP HBT Technology • High Efficiency: • 40 % @ +28 dBm output • 22 % @ +17 dBm output • Low Quiescent Current: 15 mA • Low Leakage Current in Shutdown Mode: <1 µA

Contextual Info: Coaxial Amplifier 50Ω ZHL-4240 Medium High Power 700 to 4200 MHz Features • wideband, 700-4200 MHz • high IP3, +30 dBm typ. • high gain, 40 dB min. • medium high power, 28dBm min Applications Connectors SMA • communication systems • instrumentation

9421

Abstract: FPD2250SOT89
Contextual Info: EB2250SOT89BB FPD2250SOT89 0.9GHz LNA EVALUATION BOARD FEATURES • • ¥ ¥ ¥ Measured at 900MHz 28dBm Output Power 17dB Gain 39dBm OIP3 @ 18dBm Pout Total Power Noise Figure 1.2dB Bias 5V, 300mA DESCRIPTION AND APPLICATIONS This evaluation board is a single-ended, dual biased, power amplifier. It is reactively

Contextual Info: Multiplier Diode Selection Guide 2.0 5.0 10 Output Frequency Range GHz 4-66 20 Multiplier Diode Selection Guide Device Family Available Output Power vs. Output Frequency Low Oder Multiplier N«s3 3 5 d b rT ^ ^ _ 28dbm DVA6735 ^36dbm 38dbn^^^ DVA6736 42dbm

Solder Paste, Indium 5.1 AT

Contextual Info: RMPA2259 28dBm WCDMA Power Amplifier Module General Description Features The RMPA2259 power amplifier module PAM is designed for WCDMA applications. The 2 stage PAM is internally matched to 50Ω to minimize the use of external components and features a low power mode to reduce

Contextual Info: FLM1213-12F X, Ku-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P ^ b = 40.5dBm Typ. High Gain: G ^ b = 5.5dB (Typ.) High PAE: r!add = 24% (Typ.) IM3 = -45dBc@Po = 28dBm Broad Band: 12.7 ~ 13.2GHz Impedance Matched Zin/Zout = 50Q

FLM5964

Contextual Info: n FLM5964-8D Internally Matched Power GaAs F E Ts . I FEATURES • High Output Power: P-idg = 39.0dBm Typ. • High Gain: G -j^B = 8.0dB (Typ.) • High PAE: r iadd = 30% (Typ.) • Low IM 3 = -45dBc@Po = 28dBm • Broad Band: 5.9 ~ 6.4GHz • Impedance Matched Zin/Zout = 50Q

ECJ-1VB1H102K

Abstract: RMPA0966
Contextual Info: PRELIMINARY RMPA0966 i-Lo WCDMA Band V Power Amplifier Module tm Features General Description • 42% CDMA/WCDMA efficiency at +28dBm Pout The RMPA0966 Power Amplifier Module PAM is Fairchild’s latest innovation in 50Ω matched, surface mount modules targeting Cellular CDMA/WCDMA/HSDPA,

Contextual Info: FLM1213-12F X, Ku-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 40.5dBm Typ. High Gain: G1dB = 5.5dB (Typ.) High PAE: hadd = 24% (Typ.) IM3 = -45dBc@Po = 28dBm Broad Band: 12.7 ~ 13.2GHz Impedance Matched Zin/Zout = 50W

power rf

Contextual Info: FC7214 Future Communications Integrated circuit Inc. Power Amplifier Module for KPCS CDMA FEATURES resistance. FC7214 is manufactured with an advanced InGaP HBT MMIC process. l Single-mode operation up to 28dBm l Low quiescent current: 40mA l Optimized for a 50-Ω system

GRM1555C1HR50B

Abstract: LQG15HN12NJ02D rx193
Contextual Info: DRAFT RF3165 DRAFT RF31653V 1750 MHz WCDMA Linear Power Amplifier Module 3V 1750MHZ W-CDMA LINEAR POWER AMPLIFIER MODULE Input/Output Internally Matched@50Ω „ 28dBm Linear Output Power „ 42% Peak Linear Efficiency „ 28dB Linear Gain „ -41dBc ACLR @ ±5MHz

3g hsdpa signal Schematic Diagram

Abstract: LQG15HN12NJ02D
Contextual Info: RF3165 RF31653V 1750 MHz WCDMA Linear Power Amplifier Module 3V 1750MHZ W-CDMA LINEAR POWER AMPLIFIER MODULE Input/Output Internally Matched@50Ω „ 28dBm Linear Output Power „ 42% Peak Linear Efficiency „ 28dB Linear Gain „ -41dBc ACLR @ ±5MHz „ HSDPA Capable

29-FUNCTION

Abstract: hdr1x8
Contextual Info: RF6559 RF65594.0V to 4.5V, 915MHz ISM BAND TRANSMIT/RECEIVE MODULE 4.0V TO 4.5V, 915MHZ ISM BAND TRANSMIT/RECEIVE MODULE Tx Output Power: 28dBm  Tx Gain: 42dB   Integrated Single Port Rx/Tx 50 Bi-directional Transceiver Interface LNA with Bypass Mode

GTO MODULE

Abstract: ECJ-1VB1H102K SN63 SN96 Solder Paste, Indium 5.8
Contextual Info: PRELIMINARY RMPA1766 i-Lo tm WCDMA Band IV Power Amplifier Module Features General Description • 40% WCDMA efficiency at +28dBm Pout The RMPA1766 Power Amplifier Module PAM is Fairchild’s latest innovation in 50Ω matched, surface mount modules targeting UMTS/WCDMA/HSDPA

FLM1213-12F

Contextual Info: FLM1213-12F X, Ku-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 40.5dBm Typ. High Gain: G1dB = 5.5dB (Typ.) High PAE: ηadd = 24% (Typ.) IM3 = -45dBc@Po = 28dBm Broad Band: 12.7 ~ 13.2GHz Impedance Matched Zin/Zout = 50Ω

AWT6112

Contextual Info: AWT6112 Cellular Dual Mode AMPS/CDMA 3.4V/28dBm Linear Power Amplifier Module ADVANCED PRODUCT INFORMATION - Rev 0.1 FEATURES • • • • • • • • InGaP HBT Technology High Efficiency: 49% AMPS, 38% CDMA Low Quiescent Current: 50 mA Low Leakage Current in Shutdown Mode: <5 µA

0402 100nF waffle

Abstract: Filtronic FMA3013 Filtronic Compound Semiconductors
Contextual Info: FMA3013 2-20GHZ BROADBAND MMIC AMPLIFIER FEATURES: • • • • • • • Advance Product Information v0.1 FUNCTIONAL SCHEMATIC: 8dB Gain Single Supply Self Biased 28dBm P1dB Output Power at 12V pHEMT Technology Bias Control Input Return Loss <-9.7dB

AWT6112

Contextual Info: AWT6112 Cellular Dual Mode AMPS/CDMA 3.4V/28dBm Linear Power Amplifier Module PRELIMINARY DATA SHEET - Rev 1.5 FEATURES • InGaP HBT Technology • High Efficiency: 54% AMPS, 38% CDMA • Low Quiescent Current: 50 mA • Low Leakage Current in Shutdown Mode: <5 mA

Contextual Info: AWT6138 HELP PCS/CDMA 3.4V 28dBm Linear Power Amplifier Module TM PRELIMINARY DATA SHEET - Rev 1.3 FEATURES • InGaP HBT Technology • High Efficiency: 40% at +28 dBm 22% at +16 dBm 15% at +7 dBm AW T • Low Quiescent Current: 16 mA • Low Leakage Current in Shutdown Mode: <1 µA

Contextual Info: AWT6271 HELP Cellular/WCDMA 3.4V/28dBm Linear Power Amplifier Module TM PRELIMINARY DATA SHEET - Rev 1.5 FEATURES • InGaP HBT Technology • High Efficiency: 45 % @ POUT = +28 dBm 20 % @ POUT = +16 dBm AWT6271 15 % @ POUT = +7 dBm • Low Quiescent Current: 16 mA

MSC 5518

Contextual Info: LX5518 TM InGaP HBT 2.4 – 2.5 GHz Power Amplifier P RODUCTION D ATA S HEET ̇ ̇ ̇ ̇ ̇ ̇ ̇ ̇ ̇ ̇ ̇ Advanced InGaP HBT 2.4-2.5GHz Operation Single-Polarity 3-5V Supply Power Gain ~ 30 dB 26dBm @3%EVM,802.11g/5V 24dBm @3.5%EVM,80211g/3.3V 28dBm @CCK,802.11b/5V

Contextual Info: Coaxial Amplifier 50Ω ZHL-4240 Medium High Power 700 to 4200 MHz Features • wideband, 700-4200 MHz • high IP3, +38dBm typ. • high gain, 40 dB min. • medium high power, 28dBm min Applications • communication systems • instrumentation • satellite dist./GPS/PCS

Contextual Info: R A -0011 AFONICS - InGaAs PIN/TIA - 1GHz minimum bandwidth - Differential output and AGC -R esp onsivit y ttypic ypic ally 3300 V/W Resp esponsivit onsivity ypically - Typic al sensitivit y -28dBm ypical sensitivity -M inimum o v er load -3dBm Minimum ov