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Contextual Info: 28C64 Timer E2 64K Electrically Erasable PROM October 1989 Features Description • CMOS Technology ■ Low Power • 50 mA Active • 150 pA Standby ■ Page Write Mode • 64 Byte Page • 160 us Average Byte Write Time SEEQ’s 28C64 is a CMOS 5V only, 8K x 8 Electrically
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28c64000cyclesmd400004/d |
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28c64 military
Abstract: 28C64 plcc 28c64-200 28C64 28C64 EEPROM
Contextual Info: 28C64 Technology, Incorporated Timer E2 64K Electrically Erasable PROM July 1991 Features • P ow er U p/D own P rotection Circuitry UHItary, E xtended a n d C om m ercial Tem perature Range
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28c640106/amd400106/a28c64 military+328c64 plcc28c64-20028c64 eeprom
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seeq 28C64
Abstract: 28C64 EEPROM eeprom 28c64 28C64-250 28C64-300 28C64 28C64-350 2SC64 at 28c64s 28C64 military
Contextual Info: 28C64 Technology, Incorporated Timer E2 64K Electrically Erasable PROM July 1991 Features Power Up/Down Protection Circuitry • Military, Extended and Commercial Temperature Range • - 5 5 eC to +125°C Operation Military . -40°C to +8S°C Operation (Extended)
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28c64-55ecmd400106/aseeq 28c64+828c64 eepromeeprom 28c6428c64-25028c64-30028c64-3502sc64at 28c64s28c64 military
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28C64 EEPROM
Abstract: eeprom 28c64 28c64 OB9028 K1909 6D9709 8823 2C9236 6B1999-1 6A9616
Contextual Info: PAGE 1 OF 10 ATMEL CORPORATION Tel: 408 441-0311 Fax:(408)436-4200 AT-28C64 CMOS EEPROM RELIABILITY DATA -150°C DYNAMIC OPERATING LIFE TEST -DATA RETENTION BAKE (200°C) -CYCLE TEST -125°C DYNAMIC OPERATING LIFE TEST (PLASTIC) -15 PSIG PRESSURE POT -85°C/85% RELATIVE HUMIDITY LIFE TEST
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at-28c64187-3b133317b2232510b-2+153a07813a0782b14b19734d19714d1971-228c64 eepromeeprom 28c6428c64ob9028k19096d970988232c92366b1999-16a9616
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28C64 EEPROM
Abstract: eeprom 28c64 28C64 plcc 28C64 28c64 ram 3614-1 28C64-15 28C648 DS11108A-1 006042
Contextual Info: GENERAL INSTRUMENT ELDMIOÍM^ 28C64 64K 8K x 8 CMOS Electrically Erasable PROM FEATURES • Fast Read Access Time — 150 ns ■ High Performance CMOS T echnology fo r Low Power Dissipation — 100 ¿<A Standby — 30 mA Active ■ Fast Byte W rite Tim e — 200 jjs o r 1 ms
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28c64100aiabyte-wid496-0844ds11108a-8+928c64 eepromeeprom 28c6428c64 plcc28c64 ram3614-128c64-1528c648ds11108a-1006042
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seeq 28C64
Abstract: 8c643 28C64 EEPROM 28C64 plcc 28C64-250 28C64 military eeprom+28c64
Contextual Info: 28C64 Timer E2 64K Electrically Erasable PROM October 1989 Features Description • CMOS Technology ■ Low Power • 50 mA Active • 150 pA Standby ■ Page Write Mode • 64 Byte Page • 160 us Average Byte Write Time a Byte Write Mode ■ Write Cycle Completion Indication
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28c64md400004/dseeq 28c648c643+528c64 eeprom28c64 plcc28c64-25028c64 militaryeeprom+28c64
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M28C64
Abstract: M28C64-W PDIP28 PLCC32 S028
Contextual Info: SGS-THOMSON iyiEïïïïÂQDtES M 28C64 64K 8K x 8 PARALLEL EEPROM with SOFTW ARE DATA PRO TECTION • FAST ACCESS TIME: - 90 ns a t5 V - 120ns at 3V ■ SINGLE SUPPLY VOLTAGE: - 5V ± 10% for M28C64 - 2.7V to 3.6V for M28C64-xxW ■ LOW POWER CONSUMPTION
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m28c64120nsm28c64-xxwm28c64-w+4tsop28pdip28plcc32s028
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26c64
Abstract: 28C64 EEPROM 28C64 plcc eeprom 28c64 28C64I 28c64 ram 28C64 military 28C648 28c64 28c64 833
Contextual Info: 3890002 MICROCHIP TECHNOLOGY GENL INC GENERAL INSTRUMENT IN S T R / S3 D 28C64 MICROCHIP 83D blG3201 03404 0003404 2 PlRELOIMfllMAIRV DM FO M ATO O IM 64K 8K x 8 CMOS Electrically Erasable PROM FEATURES • Fast Read Access Time — 150 ns ■ High Performance CMOS Technology for Low
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blg320128c64ds11108a-826c64+828c64 eeprom28c64 plcceeprom 28c6428c64i28c64 ram28c64 military28c64828c64 833
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M28C64
Abstract: M28C64-W PDIP28 PLCC32 S028
Contextual Info: SGS-THOMSON iyitEïïïïÂQDtES M 28C64 64K 8K x 8 PARALLEL EEPROM with SOFTW ARE DATA PRO TECTION • FAST ACCESS TIME: - 90 ns a t5 V - 120ns at 3V ■ SINGLE SUPPLY VOLTAGE: - 5V ± 10% for M28C64 - 2.7V to 3.6V for M28C64-xxW ■ LOW POWER CONSUMPTION
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m28c64120nsm28c64-xxwpdip28+4plcc32tsop28m28c64-ws028
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M28F512-12C3
Abstract: 93C56P xicor 28C64 AT28C17-25PC 93C66P m5m28f102j AT28C16-20PC ATMEL serial EEPROM 32K 93C56SN eeprom 28c64
Contextual Info: Main Menu September 2001 Cross Reference Guide Main Menu Main Menu Table of Contents Product Page Number Featured Product Information Serial EEPROM Atmel Fairchild Microchip ST Microelectronics Xicor 3-Wire/Microwire Serial EEPROM Atmel Microchip Fairchild
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11f-16m28f512-12c393c56pxicor 28c64+7at28c17-25pc93c66pm5m28f102jat28c16-20pcatmel serial eeprom 32k93c56sneeprom 28c64
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27C512
Abstract: 28C64 EPROM programmer Winbond 27c512 27C256 27PC512 st 27c256b 2864A 27pc256 32 pin plcc socket to dil 27c65
Contextual Info: AD50/62 - Package Converters for E E PROMs and FLASH etc (PLCC) Q u C j j lP Page 1 of 5 PRODUCX d a t a sh eet AD62 and AD50 Package Converters for E(E)PROMs and FLASH etc (PLCC) Product Code Pins on skt Pins on Base Wiring Code Package Base pitch” Miscellaneous
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ad50/62com/ad6227c12827c256+1127c51227hc25627c51328c64 eprom programmerwinbond 27c51227pc512st 27c256b2864a27pc25632 pin plcc socket to dil27c65
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28C64
Abstract: XL28C64 28C64C 28C64 200ns
Contextual Info: IMAGE UNAVAILABLE • T D O 1!t.^7 OSt.3170 TE? ■ This Material Copyrighted By Its Respective Manufacturer XL28C64 Preliminary BLOCK DIAGRAM The sophisticated architecture of this device provides complete and automatic control of the nonvolatile write cycle eliminating the need for external timers, latches,
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xl28c6464-byte28c6428c64c+128c64 200ns
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Contextual Info: IMAGE UNAVAILABLE ^DDMt.^7 OSt.3170 TE? • XL28C64 Preliminary BLOCK DIAGRAM The sophisticated architecture of this device provides complete and automatic control of the nonvolatile write cycle eliminating the need for external timers, latches, high voltage generators and supplemental inadvertent
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xl28c6464-byte |
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st 27c256b
Abstract: 28C64 EPROM programmer Winbond 27c512 27c65 eprom AM2764A intel 27c512 eprom L27C128 2864a 28H256 27C512
Contextual Info: PRODUCT DATA SHEET AD62 479-913 and AD50 (479-834) Package Converters for E(E)PROMs and FLASH etc (PLCC) Product Code Pins on skt Pins on Base Wiring Code Package Base pitch" Miscellaneous AD62 32 28 01 P .6 Clamshell Product Code Pins on skt Pins on Base
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am2764a-am2764ajam2764jam27c64-+13am27c64-jam27128a-am27128a-jst 27c256b28c64 eprom programmerwinbond 27c51227c65eprom am2764aintel 27c512 eproml27c1282864a28h25627c512
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atmel 93c66
Abstract: PH29EE010 2764 EEPROM 537RU10 sst ph29ee010 556RT7A 556RT5 intel 8755 eprom 2716 537RU17
Contextual Info: Универсал ьны й програм матор Sterh ST011 Производст во: Россия. Цен а: 17500 руб. с НД С. ST011 имеет всего одну универсальную DIP42 панель для программирования
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st011dip42rs232155re3+12556rt4556rt4a556rt5atmel 93c66ph29ee0102764 eeprom537ru10sst ph29ee010556rt7aintel 8755eprom 2716537ru17
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ST 28C64
Contextual Info: G 7 . M28C64 64 Kbit 8K x 8 Parallel EEPROM With Software Data Protection • Fast Access Time: - 90 ns at VCc=5 V forM 28C 64 and M28C64-A - 120 ns at Vcc=3 V for M28C64-xxW ■ Single Supply Voltage: - 4.5 V to 5.5 V for M28C64 and M28C64-A - 2.7 V to 3.6 V for M28C64-xxW
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m28c64m28c64-am28c64-xxwst 28c64 |
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AT28C64
Abstract: AT28C64E AT28C64/X
Contextual Info: AT28C64/X Features • • • • • • • • • • Fast Read Access Time - 120 ns Fast Byte Write - 200 µs or 1 ms Self-Timed Byte Write Cycle Internal Address and Data Latches Internal Control Timer Automatic Clear Before Write Direct Microprocessor Control
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at28c64/xat28c64at28c64e |
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AT28C64
Abstract: AT28C64-12 28C64 15pc 28P6 AT28C64E 28c64 ram AT28C64-15 28C64 AT28C64-20 AT28C64-25
Contextual Info: AT28C64/X Features • • • • • • • • • • Fast Read Access Time - 120 ns Fast Byte Write - 200 µs or 1 ms Self-Timed Byte Write Cycle Internal Address and Data Latches Internal Control Timer Automatic Clear Before Write Direct Microprocessor Control
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at28c64/xat28c64at28c64-1228c64 15pc+728p6at28c64e28c64 ramat28c64-1528c64at28c64-20at28c64-25
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Contextual Info: MICROCHIP TECHNOLOGY INC SHE D b l G 3 2 G l GGGM7Sti 5 • "F4U 3-27 28C64B Microchip 64K 8K x 8 CMOS Electrically Erasable PROM FEATURES DESCRIPTION • High Speed Performance - 70,90,120,150,200, 250ns Access Time • CMOS Technology for Low Power Dissipation
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28c64b250ns64-byteds11120a-7+6blq3e0128c64b_28c64b-ds11120a-8120ns150ns
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DS60037
Abstract: 28C64B-25 28C64B M/28C64B
Contextual Info: 28C64B Microchip 64K 8K x 8 CMOS Electrically Erasable PROM FEATURES DESCRIPTION • High Speed Performance - 70, 90,120, 150, 200, 250ns Access Time • CMOS Technology for Low Power Dissipation - 70mA Active - 150nA Standby • Fast Write Cycle Times - 64-Byte Page Write Operation
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28c64bds11120a-7120ns150ns+5200ns250nsds6003728c64b-25m/28c64b
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26c64
Abstract: 26C64B 28C64B 28C64B-25 28C64B-70 28C64 28C64B-12 28C64B-90 28C64B EEPROM *26C64
Contextual Info: 28C64B M ic r o c h ip 64K 8K x 8 CMOS Electrically Erasable PROM FEATURES DESCRIPTION • High Speed Performance - 7 0 ,90 ,1 2 0 ,1 50 ,2 0 0 , 250ns Access Time • CMOS Technology for Low Power Dissipation - 70mA Active • 150|iA Standby • Fast Write Cycle Times
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28c64b250ns64-byteds11120a-7+14bl03s0128c64b_t-46-13-2728c64b-120ns150ns26c6426c64b28c64b-2528c64b-7028c6428c64b-1228c64b-9028c64b eeprom
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EPROM retention bake
Abstract: 24LC04A 24c04 National Semiconductor MICROCHIP TECHNOLOGY 920 1075
Contextual Info: M Product Reliability OVERVIEW Microchip Technology Inc.’s products provide competitive leadership in quality and reliability, with demonstrated performance of less than 100 FITs Failures in Time operating life for most products. The designed-in reliability of Microchip’s products are supported by
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27c25627c512ads11008k-pageeprom retention bake+324lc04a24c04 national semiconductormicrochip technology 920 1075
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Contextual Info: AT28C64/X Features • Fast Read Access Time -120 ns • Fast Byte Write - 200 us or 1 ms • Self-Timed Byte Write Cycle Internal Address and Data Latches Internal Control Timer Automatic Clear Before Write • Di rect Microprocessor Control READY/BUSY Open Drain Output
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at28c64/xat28c64electric5962-87514military/883c |
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Contextual Info: AT28C64/X Features • • • • • • • • • • Fast Read Access Time -120 ns Fast Byte Write - 200 |js or 1 ms Self-Timed Byte Write Cycle Internal Address and Data Latches Internal Control Timer Automatic Clear Before Write Direct Microprocessor Control
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at28c64/xat28c64at28c64x |
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