27ST415 Search Results

Contextual Info: D EN SE-PA C 8 Megabit CMOS SRAM M I C R O S Y S T E M S DPS1MS8MP DESCRIPTION: The D PS1M S8M P is a IM eg x 8 high-density, low-power static RAM module comprised of two 512K x 8 monolithicSRAM's,an advanced high-speed CMOS decoder and decouplingcapacitors surface mounted on

bma 023

Abstract: DPZ128X32IV3
Contextual Info: DENSE-PAC MICROSYSTEMS 4 M E G A B IT FLASH E EP R O M DPZ128X32IV3 D E S C R IP T IO N : The D PZ 1 2 8X 3 2 IV 3 "V E R S A - S T A C K " module ¡s a revolutionary new memory subsystem using Dense-Pac Microsystems' ceramic Stackable Leadless Chip Carriers

lem HA

Abstract: 50-PIN dps128m8bny
Contextual Info: DENSE-PAC 1 Megabit High Speed CMOS SRAM M I C R O S Y S T E M S DPS128M8CnY/BnY, DPS128X8CA3/BA3 DESCRIPTION: The DPS 128M8CnY/BnY, DPS128X8CA3/BA3 H igh Speed SRAM devices are a revolutionary new m em ory subsystem using Dense-Pac Microsystems' ceram ic Stackable Leadless C hip Carriers SLCC .

OL80m

Abstract: DPS128X32BV3 DPS128X32CV3
Contextual Info: DENSE-PAC 4 Megabit High Speed CMOS SRAM DPS128X32CV3/DPS128X32BV3 M I C R O S Y S T E M S D ESCRIPTIO N : The D PS128X32CV 3/D PS128X32EV3 "V ER S A - S T A C K " m odule is a revolutionary new high speed m em ory subsystem using Dense-Pac Microsystems' ceram ic Stackable Leadless Chip Carriers SLCC

32 pin eprom cdi

Contextual Info: DENSE-PAC MICROSYSTEMS 4 M EGABIT FLASH EEPROM DPZ128X32VI/DPZ128X32VIP DESCRIPTION: T he D P Z 128X32V I/V IP is a 4 m egabit C M O S FLA SH Electrically Erasable and Programmable nonvolatile memory module. The module is built with four 128K x 8 FLASH m em ory devices. The D P Z 1 2 8 X 3 2 V I/V IP can be user

Dense-Pac Microsystems

Abstract: NC-641
Contextual Info: DENSE-PAC 32 Megabit FLASH EEPROM MICROSYSTEMS DPZ2MX16NV3 PRELIMINARY DESCRIPTION: The D PZ 2 M X 1 6 N V 3 "V E R S A - S T A C K " m odule is a revolutionary new memory subsystem using Dense-Pac M icrosystem s' ceram ic Stackable Leadless Chip Carriers

amd 29f010

Abstract: DP5Z DP5Z12832VA
Contextual Info: DENSE-PAC 4 Megabit 5V CMOS Flash EEPROM MICROSYSTEMS DP5Z12832VA/DP5Z12832VAP PRELIMINARY DESCRIPTION: The DP5Z12832VA/DP5Z12832VAP is a 4 megabit 5 volt CMOS Flash EEPRO M (Electrically In-System Programmable and Erasable ROM Memory) module. The module is built with four 128K x 8 FLASH

50-PIN

Abstract: DPS512X16A3
Contextual Info: DENSE-PAC MICROSYSTEMS 8 Megabits CM OS SRAM DPS512Xl6n3 D ESCRIPTIO N ; The DPS512X16n3 SRAM "STACK" modules are a revolutionary new memory subsystem using Dense-Pac Microsystems' ceramic Stackable Leadless Chip Carriers SLCC . Available in straight leaded, "J" leaded

250NS160

Contextual Info: DENSE-PAC MICROSYSTEMS 0.5 Megabit CMOS EEPROM DPE32X16A DESCRIPTION: The DPE32X16A is a high-performance Electrically Erasable and Programmable Read O n ly M em ory EEPROM module and may be organized as 32K X 16, o r 64K X 8. The m odule is b u ilt w ith tw o low -pow er CMOS 32K X 8

Contextual Info: DENSE-PAC 1 Megabit CM O S EEPROM MICROSYSTEMS DPE3232V DESCRIPTION: The DPE3232V is a high-performance Electrically Erasable and Programmable Read O nly M em ory EEPROM module and may be organized as 32K x 32, 64K X 16 or 128K x 8. The m odule is b uilt w ith four low-power CMOS 32K x 8

Contextual Info: DENSE PAC 2 Megabit CM O S SRAM MICROSYSTEMS DPS256S8P/DPS256S8PL/DPS256S8PLL D ESCRIPTIO N : The DPS256S8P/PL/PLL is a 256K x 8 high-density, low-power static RAM module comprised of two 12 8 K x 8 mono Iith ic SRAM 's, an advanced h ¡gh-speed C M O S decoder and decoupling capacitors surface

Contextual Info: DENSE-PAC 2 Megabit CMOS SRAM MICROSYSTEMS DPS128X16n3 DESCRIPTION: The DPS128X16n3 SRAM "S T A C K " modules are a revolutionarynew memory subsystem using Dense-PacMicrosystems'ceramicStackable LeadlessChip Carriers SLCC . Available in straight leaded, " J " leaded

48-PIN

Abstract: 50-PIN tl71 operational 128X8A3
Contextual Info: 1 Megabit CMOS SRAM D E N S E - P A C M I C R O S Y S T E M DPS 128M8n3/DPS 128X8A3 S DESCRIPTION: The D P S 1 2 8 M 8 n Y & D P S 128X 8A 3S R A M devicesarea revolutionary new mem ory subsystem using Dense-Pac Microsystems' ceramic Stackable Leadless C hip Carriers SLCC . Available in straight leaded,

A1048

Abstract: 1431 T WE 251
Contextual Info: DENSE-PAC MICROSYSTEMS 8 Megabit CMOS SRAM DPS256 X 3 2 L/DPS256 X 32 W D ESC RIPTIO N : The D PS256X32L/D PS256X32W is a 256K x 32 high density, high-speed Static Random Access M em ory SRAM module, intended for high performance computers and digital signal

Supply Control LAF 0001

Abstract: laf 0001 power laf 0001 61YL RT1L 28X1 050I
Contextual Info: DENSE-PAC 2 M EGABIT FLASH EEPROM M I C R O S Y S T E M S DPZ128X161Y/l IY/IJY/l H Y/lA3 D ESCRIPTIO N : T he DPZ1 2 8 X 1 6 1Y/l IY/IJ Y/l H Y/l A3 d evice s are a revolutionary new memory subsystem using Dense-Pac Microsystems' ceramic Stackable Lead less Chip Carriers

Contextual Info: DENSE-PAC MICROSYSTEMS 2 Megabit High Speed CMOS SRAM D P S 1 2 8 X 1 6C n3/D PS12 8 X 1 6Bn3 DESCRIPTION: The DPS128X16Cn3/DPS128X16Bn3 High Speed SRAM "STACK" modules are a revolutionary new memory subsystem using Dense-Pac Microsystems' ceramic Stackable Leadless Chip Carriers

1431 T

Contextual Info: 8 Megabit CM O S SRAM D E N S E - P A C D P S 1M S 8M P M I C R O S Y S T E M S DESCRIPTION: The D P S 1 M S 8 M P is a 1Meg x 8 high-density, low-power static RAM module comprised of two 512K x 8 monolithicSRAM's, an advanced high-speed CM OS decoder and decoupling capacitors surface mounted on