27JUN07 Search Results

Contextual Info: 6 7 THIS DRAWING IS UNPUBLISHED. COPYRIGHT RELEASED BY TYCO ELECTRONICS CORPORATION. FOR PUBLICATION 5 4 2 3 - ALL RIGHTS RESERVED. LOC DIST AD 25 REVISIONS P LTR 0 1 DESCRIPTION DATE DWN 27JUN07 REVISED PER ECO-07-01 281 9 APVD DH DB HOUSING MATERIAL: GLASS-FILLED POLYMER.

Honeywell ES120-0030

Abstract: ES1200 F617 ES120-0030 Honeywell 8463
Contextual Info: F0-3M18-A10 I I 9 1 8 HONEYWELL 1 \^ 6 1 5 PART NUMBER 0 2 1 .9 5 ES120-0030 I 3 4 I REV 2 WANGE DOCUMENT CHANGED BY CHECK B 0031865 TSK 27JUN07 CMH I Terminals: 2 .8 0 /2 .7 5 x 0 .8 2 5 /0 .7 7 5 Brass, Tin Plated. HONEYWELL ES12 0 -0 0 3 0 MOULDED ON THIS FACE-s^

Contextual Info: 7 THIS DRAWING IS UNPUBLISHED. COPYRIGHT - 5 6 4 2 3 RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. ALL RIGHTS RESERVED. LOC DIST AD 25 R E VIS IO N S LTR DESCRIPTION 01 9 5 [ 3 . 7 4 0 ] MAX HOUSING MATERIAL: POST MATERIAL: 90+0.1 [3.543+.004]-

PSR 406

Abstract: 2AC110 KCB0701
Contextual Info: i. F O - 5 5 1 1 1 -A HONEYWELL P A R T NUMBER DOCUMENT REV 0032412 B 2AC110 PUSH TO OPERATE-RETURNS AUTOMATICALLY TO POSITION SHOWN PULL TO OPERATE-REMAINS IN OPERATED POSITION UNTIL RESET FOR AUTOMATIC RETURN BY NEXT FULL STROKE "PUSH" OPERATION B CHANGED

transistor 3055

Abstract: DIODE IN 3055 TR 3055 6N135 6N136 VDE0884
Contextual Info: 6N135-3054/6N136-3055 Vishay Semiconductors High Speed Optocoupler, 1 MBd, Photodiode with Transistor Output FEATURES • • • • NC 1 8 C VCC B (VB) A 2 7 C 3 6 C (VO) NC 4 5 E (GND) i179081 DESCRIPTION The 6N135 and 6N136 are optocouplers with a GaAIAs infrared emitting diode, optically coupled with

74272

Abstract: 4686 AN609
Contextual Info: Si5944DU_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

74023

Abstract: AN609 Si5904DC
Contextual Info: Si5904DC_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

74027

Abstract: AN609 Si5935DC
Contextual Info: Si5935DC_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

AN609

Abstract: Si6423DQ
Contextual Info: Si6423DQ_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

7935

Abstract: diode 7935 AN609 Si6410DQ n mosfet pspice parameters
Contextual Info: Si6410DQ_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

PS2231

Abstract: PS2136 ps223 phison
Contextual Info: 2F, RiteKom Bldg No.669, Sec. 4, Chung Hsing Rd., Chutung, Hsinchu, Taiwan 310, R.O.C. Tel： 886-3-5833899 ext: 1001 or 1005 Fax： 886-3-5833666 Email：sales@phison.com Phison Electronics Corporation USB 2.0 Flash Controller Specification PS2231 Version 1.6

Contextual Info: more than you expect ISDN-S Dual Transformers With Common Mode Chokes DigitalTelecom Features • RoHS compliant versions available • Includes Common Mode Choke • Small Size • Optional pin-outs and turns ratio • Excellent longitudinal balance • Matched to IC manufacturers’

diode cc 3053

Abstract: cc 3053 cc 3053 diode Infrared Temperature Sensor dip-6 IEC60065 K 3053 4N32 VDE0884 8172-1
Contextual Info: 4N32-3053 Vishay Semiconductors Optocoupler, Photodarlington Output, High Gain, with Base Connection FEATURES A 1 6 B C 2 5 C NC 3 4 E • Very high current transfer ratio, 500 % Min. • High isolation resistance, 1011 Ω typical • Standard plastic DIP package

Contextual Info: 6 7 THIS DRAWING IS UNPUBLISHED. COPYRIGHT - 5 4 3 2 RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. ALL RIGHTS RESERVED. LOC DIST AD 25 R E VIS IO N S LTR 01 H O U SIN G 9 5 [3.74 0 ] POST MAX MATERIAL: M ATERIAL: DESCRIPTION REVISED PER E C O - 0 7 - 01 281 9

DO-220AA

Abstract: JESD22-B102D J-STD-002B P2B MARKING CODE ESH2PD P2d MARKING CODE
Contextual Info: New Product ESH2PB, ESH2PC & ESH2PD Vishay General Semiconductor High Current Density Surface Mount Ultrafast Rectifiers eSMPTM FEATURES • Very low profile - typical height of 1.0 mm Series • Ideal for automated placement • Glass passivated chip junction

Contextual Info: 4 T H IS D R A W IN G IS U N P U B L IS H E D . 3 R ELEASED FO R ALL C O P Y R IG H T BY 1 T C 0 E L E C T R O N IC S P U B L IC A T IO N R IG H T S -, - RESERVED. C O R P O R A T IO N . D C 1 6 0 1 0 0 9 — A AMP 1471-9 REV 31M AR2000 TERMINALS TO UNWIND

AN609

Abstract: Si6459BDQ
Contextual Info: Si6459BDQ_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

74028

Abstract: AN609 Si5933DC
Contextual Info: Si5933DC_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

AN609

Abstract: Si5905DC
Contextual Info: Si5905DC_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

Si6443DQ

Abstract: AN609
Contextual Info: Si6443DQ_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

AN609

Abstract: Si6434DQ
Contextual Info: Si6434DQ_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

Contextual Info: 30L30CTPbF Vishay High Power Products Schottky Rectifier, 30 A FEATURES • • • • Base 2 common cathode 150 °C TJ operation Center tap configuration Very low forward voltage drop High frequency operation Pb-free Available RoHS* COMPLIANT • High purity, high temperature epoxy

TS53

Contextual Info: TS53Y Vishay Sfernice Surface Mount Miniature Trimmers Single-Turn Cermet Sealed FEATURES • 0.25 W at 70 °C • For PCB version see T53Y series RoHS • Wide ohmic range 10 Ω to 1 MΩ COMPLIANT • Small size for optimum packing density • Suitable for both manual or automatic operation

74274

Abstract: 9327 AN609
Contextual Info: Si5857DU_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].