SI5933DC Search Results

Contextual Info: Si5933DC Vishay Siliconix Dual P-Channel 1.8 V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.110 at VGS = - 4.5 V - 3.6 0.160 at VGS = - 2.5 V - 3.0 0.240 at VGS = - 1.8 V - 2.4 Qg (Typ.) 5.1 • Halogen-free According to IEC 61249-2-21

Contextual Info: Si5933DC Vishay Siliconix Dual P-Channel 1.8 V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.110 at VGS = - 4.5 V - 3.6 0.160 at VGS = - 2.5 V - 3.0 0.240 at VGS = - 1.8 V - 2.4 Qg (Typ.) 5.1 • Halogen-free According to IEC 61249-2-21

Si5933DC

Contextual Info: Si5933DC New Product Vishay Siliconix Dual P-Channel 1.8-V G-S MOSFET PRODUCT SUMMARY VDS (V) –20 20 rDS(on) (W) ID (A) 0.110 @ VGS = –4.5 V –3.6 0.160 @ VGS = –2.5 V –3.0 0.240 @ VGS = –1.8 V –2.4 S1 S2 1206-8 ChipFET 1 S1 D1 G1 G1 D1 G2 S2

Si5933DC

Abstract: Si5933DC-T1-E3
Contextual Info: Si5933DC Vishay Siliconix Dual P-Channel 1.8 V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.110 at VGS = - 4.5 V - 3.6 0.160 at VGS = - 2.5 V - 3.0 0.240 at VGS = - 1.8 V - 2.4 Qg (Typ.) 5.1 • Halogen-free According to IEC 61249-2-21

74028

Abstract: AN609 Si5933DC
Contextual Info: Si5933DC_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

Si5933DC

Contextual Info: SPICE Device Model Si5933DC Vishay Siliconix Dual P-Channel 1.8-V G-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Si5933DC

Contextual Info: SPICE Device Model Si5933DC Vishay Siliconix Dual P-Channel 1.8-V G-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Si5933DC

Abstract: Si5933DC-T1 "MARKING CODE G2"
Contextual Info: Si5933DC Vishay Siliconix Dual P-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −20 rDS(on) (W) ID (A) 0.110 @ VGS = −4.5 V −3.6 0.160 @ VGS = −2.5 V −3.0 0.240 @ VGS = −1.8 V −2.4 D TrenchFETr Power MOSFET D 1.8-V Rated Qg (Typ)

ChipFET

Abstract: Si5933DC Si5933DC-T1
Contextual Info: Si5933DC Vishay Siliconix Dual P-Channel 1.8-V G-S MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (Ω) ID (A) 0.110 @ VGS = -4.5 V -3.6 -20 0.160 @ VGS = -2.5 V -3.0 0.240 @ VGS = -1.8 V -2.4 S1 S2 1206-8 ChipFETt 1 S1 D1 G1 G1 D1 G2 S2 D2 G2 D2 Marking Code

VISHAY MARKING S10 SMA

Contextual Info: Si5933DC Vishay Siliconix Dual P-Channel 1.8 V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.110 at VGS = - 4.5 V - 3.6 0.160 at VGS = - 2.5 V - 3.0 0.240 at VGS = - 1.8 V - 2.4 Qg (Typ.) 5.1 • Halogen-free According to IEC 61249-2-21

Si5933DC

Contextual Info: SPICE Device Model Si5933DC Vishay Siliconix Dual P-Channel 1.8-V G-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Contextual Info: Si5933DC Vishay Siliconix Dual P-Channel 1.8-V G-S MOSFET PRODUCT SUMMARY VDS (V) −20 rDS(on) (W) ID (A) 0.110 @ VGS = −4.5 V −3.6 0.160 @ VGS = −2.5 V −3.0 0.240 @ VGS = −1.8 V −2.4 S1 S2 1206-8 ChipFETr 1 S1 D1 G1 G1 D1 G2 S2 D2 Marking Code

Si5933DC

Abstract: Si5933DC-T1
Contextual Info: Si5933DC Vishay Siliconix Dual P-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −20 rDS(on) (W) ID (A) 0.110 @ VGS = −4.5 V −3.6 0.160 @ VGS = −2.5 V −3.0 0.240 @ VGS = −1.8 V −2.4 D TrenchFETr Power MOSFET D 1.8-V Rated Qg (Typ)

Specification Comparison

Abstract: SI5933CD Si5933DC Si5933DC-T1 Si5933DC-T1-E3 SI5933CDC
Contextual Info: Specification Comparison Vishay Siliconix Si5933CDC vs. Si5933DC Description: Package: Pin Out: Dual N-Channel 20-V D-S MOSFET 1206-8 ChipFET Identical Part Number Replacements: Si5933CDC-T1-E3 replaces Si5933DC-T1-E3 Si5933CDC-T1-E3 replaces Si5933DC-T1

BS250KL-TR1-E3

Abstract: si6435adq-t1-e3 TP0610KL Si9435BDY-T1-e3ct SI6467BDQ-T1-E3 SI1024X-T1-E3 SI5855DC-T1-E3 SIA411DJ-T1-E3 SUM110P06-07L-E3 D2PAK SI1903DL-T1-E3
Contextual Info: NEW! Siliconix MOSFETs Multiple pinout configurations available, see Digi-Key website for data sheet. Fig. Package VDSS V ID (A) RDS(on) (Ω) Digi-Key Part No. Cut Tape Price Each 1 25 100 Tape and Reel ‡ Qty. Pricing Vishay Part No. Fig. 1 — 1206-8

VN10KLS

Abstract: mosfet bs250 Si4730 SUP85N03-04P VN66AFD Si4835DY si5504 SI3459DV sup65p06 sub75p05
Contextual Info: Power MOSFET Selector Guide Vishay Siliconix LITTLE FOOT Plusä ä Schottky Name Channel Configuration VDS V rDS(on) @ 10.0V rDS(on) @ 4.5V rDS(on) @ 3.3V rDS(on) @ 2.5V rDS(on) @ 1.8V ID (A) Max. Qg (nC) Typ. PD (W) Max. SO-8 Si4831DY P Single Plus Integrated

BS250KL

Abstract: tsop6 marking 345 SUD50P08 SI3437 SUD19P06-60L MOSFET SUB75P03 tsop6 marking 443 Si5947DU Si1471DH SI1073X
Contextual Info: P-Channel Power MOSFETs Selector Guide Vishay Siliconix 2201 Laurelwood Road P.O. Box 54951 Santa Clara, CA 95056 Phone: +1 408 988 8000 Fax: +1 408 567 8950 www.vishay.com NOTICE Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no

Contextual Info: 19-0810; Rev 0; 4/07 Overvoltage Protectors with External pFET Features The MAX4923–MAX4926 overvoltage protection OVP controllers protect low-voltage systems against high-voltage faults of up to +28V with an appropriate external pFET. When the input voltage exceeds the overvoltage lockout (OVLO) threshold, or falls below the

GS 069

Abstract: Si5902DC SPICE Device Model tsop6 marking 312 sC89-6 Si7705DN SI7100DN Si3865BDV Si5947DU Si3861BDV 1212-8
Contextual Info: Power MOSfETs for Portable applications Selector guide vishay Siliconix 2201 Laurelwood road P.o. Box 54951 santa clara, cA 95056 Phone: +1 408 988 8000 Fax: +1 408 567 8950 www.vishay.com NOTICE specifications of the products displayed herein are subject to change without notice. Vishay intertechnology, inc., or anyone on its behalf, assumes no

220v AC voltage stabilizer schematic diagram

Abstract: LG color tv Circuit Diagram tda 9370 1000w inverter PURE SINE WAVE schematic diagram schematic diagram atx Power supply 500w TV SHARP IC TDA 9381 PS circuit diagram wireless spy camera 9744 mini mainboard v1.2 sony 279-87 transistor E 13005-2 superpro lx
Contextual Info: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 AD9272 Analog Front End, iMEMS Accelerometers & Gyroscopes . . . . . . 782, 2583 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-528 Acceleration and Pressure Sensors . . . . . . . . . . . . . . . . . . . . . . . . . . Page 2585

446V

Abstract: MAX4923 L611 to control
Contextual Info: 19-0810; Rev 0; 4/07 Overvoltage Protectors with External pFET Features The MAX4923–MAX4926 overvoltage protection OVP controllers protect low-voltage systems against high-voltage faults of up to +28V with an appropriate external pFET. When the input voltage exceeds the overvoltage lockout (OVLO) threshold, or falls below the