27AUG12 Search Results

1734279-4

Abstract: 1734279-1 1-1734279-2
Contextual Info: THIS DRAWING IS UNPUBLISHED. 1 COPYRIGHT RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. 2009 LOC ALL RIGHTS RESERVED. D IS T R E V IS IO N S / DW p LTR B2 DESCRIPTION R E V IS E D E C R — 1 2 - 0 0 6 7 7 1 DATE DWN APVD 27AUG12 JL WK A + CX ? 5

Contextual Info: SQJ960EP www.vishay.com Vishay Siliconix Automotive Dual N-Channel 60 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • • • • 60 RDS(on) () at VGS = 10 V 0.036 RDS(on) () at VGS = 4.5 V 0.046 ID (A) per leg 8 Configuration Dual PowerPAK

si8812

Abstract: si88 AGS3
Contextual Info: New Product Si8812DB Vishay Siliconix N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) () Max. ID (A)a 0.059 at VGS = 4.5 V 3.2 0.061 at VGS = 3.7 V 3.1 0.065 at VGS = 2.5 V 3.0 0.085 at VGS = 1.8 V 2.7 • • • • • Qg (Typ.)

Contextual Info: SQJ962EP www.vishay.com Vishay Siliconix Automotive Dual N-Channel 60 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • TrenchFET Power MOSFET • AEC-Q101 Qualified • 100 % Rg and UIS Tested 60 RDS(on) () at VGS = 10 V 0.060 RDS(on) () at VGS = 4.5 V

SQJ848AEP

Contextual Info: SQJ848AEP www.vishay.com Vishay Siliconix Automotive N-Channel 40 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • TrenchFET Power MOSFET • 100 % Rg and UIS Tested 40 RDS(on) () at VGS = 10 V 0.0076 RDS(on) () at VGS = 4.5 V 0.0086 ID (A)

SiSA18DN

Contextual Info: New Product SiSA18DN Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) () (Max.) ID (A)f 0.0075 at VGS = 10 V 38.3 0.0120 at VGS = 4.5 V 30.2 • TrenchFET Gen IV Power MOSFET • 100 % Rg and UIS Tested • Material categorization:

SQJ410EP-T1-GE3

Contextual Info: SQJ410EP www.vishay.com Vishay Siliconix Automotive N-Channel 30 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • TrenchFET Power MOSFET 30 RDS(on) () at VGS = 10 V 0.0039 RDS(on) () at VGS = 4.5 V 0.0042 ID (A) • AEC-Q101 Qualifiedd • 100 % Rg and UIS Tested

Contextual Info: SQJ465EP www.vishay.com Vishay Siliconix Automotive P-Channel 60 V D-S 175 °C MOSFET FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • AEC-Q101 Qualifiedd • 100 % Rg and UIS Tested PRODUCT SUMMARY VDS (V)

Contextual Info: SQJ488EP www.vishay.com Vishay Siliconix Automotive N-Channel 100 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • TrenchFET Power MOSFET 100 RDS(on) () at VGS = 10 V 0.0210 RDS(on) () at VGS = 4.5 V 0.0258 ID (A) • AEC-Q101 Qualifiedd

Contextual Info: SQJ912AEP www.vishay.com Vishay Siliconix Automotive Dual N-Channel 40 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • TrenchFET Power MOSFET 40 RDS(on) () at VGS = 10 V 0.0093 • 100 % Rg and UIS Tested RDS(on) () at VGS = 4.5 V 0.0111

Contextual Info: SQJ443EP www.vishay.com Vishay Siliconix Automotive P-Channel 40 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • AEC-Q101 Qualifiedd • 100 % Rg and UIS Tested

Contextual Info: SQJ962EP www.vishay.com Vishay Siliconix Automotive Dual N-Channel 60 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • AEC-Q101 Qualifiedd • 100 % Rg and UIS Tested

Contextual Info: VS-HFA08TB120SPbF www.vishay.com Vishay Semiconductors HEXFRED , Ultrafast Soft Recovery Diode, 8 A FEATURES • • • • Ultrafast and ultrasoft recovery Very low IRRM and Qrr Specified at operating conditions Meets MSL level 1, per J-STD-020, LF maximum

Contextual Info: SQJ941EP www.vishay.com Vishay Siliconix Automotive Dual P-Channel 30 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • TrenchFET Power MOSFET - 30 RDS(on) () at VGS = - 10 V 0.024 RDS(on) () at VGS = - 4.5 V 0.039 ID (A) per leg -8 Configuration

Contextual Info: SQJ970EP www.vishay.com Vishay Siliconix Automotive Dual N-Channel 40 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • AEC-Q101 Qualifiedd • 100 % Rg and UIS Tested

Contextual Info: New Product SiJ400DP Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, g 0.004 at VGS = 10 V 32 0.005 at VGS = 4.5 V 32 VDS (V) 30 Qg (Typ.) 45 nC PowerPAK SO-8L Single • Halogen-free According to IEC 61249-2-21

tsop31xx

Contextual Info: Introduction of New Aether IC and Improved Optical Filter www.vishay.com Vishay Semiconductors Product Change Notification Product Group: Opto Modules & Visibles APPROVAL since 22-AUG-2012 / PCN OMV-599-2012 Rev. TITLE: Introduction of new Aether Ic + improved optical

311E-15

Abstract: 8082 8-PIN
Contextual Info: New Product SiZ916DT Vishay Siliconix Dual N-Channel 30 V D-S MOSFETs FEATURES PRODUCT SUMMARY VDS (V) Channel-1 30 Channel-2 30 RDS(on) () (Max.) ID (A)g 0.0064 at VGS = 10 V 16a 0.0100 at VGS = 4.5 V 16a 0.0013 at VGS = 10 V 40a 0.00175 at VGS = 4.5 V

Contextual Info: SQJ460EP www.vishay.com Vishay Siliconix Automotive N-Channel 60 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition 60 RDS(on) () at VGS = 10 V 0.0096 RDS(on) () at VGS = 4.5 V 0.0120 ID (A)

Contextual Info: New Product SiR642DP Vishay Siliconix N-Channel 40 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 40 TrenchFET Power MOSFET • Low Qg for High Efficiency • 100 % Rg and UIS Tested • Material categorization: For definitions of compliance please see

Contextual Info: SQJ850EP www.vishay.com Vishay Siliconix Automotive N-Channel 60 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition 60 RDS(on) (Ω) at VGS = 10 V 0.023 RDS(on) (Ω) at VGS = 4.5 V 0.032 ID (A) • TrenchFET Power MOSFET

Contextual Info: SQJ848AEP www.vishay.com Vishay Siliconix Automotive N-Channel 40 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • TrenchFET Power MOSFET • 100 % Rg and UIS Tested 40 RDS(on) () at VGS = 10 V 0.0076 RDS(on) () at VGS = 4.5 V 0.0086 ID (A)

Contextual Info: SQJ412EP www.vishay.com Vishay Siliconix Automotive N-Channel 40 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • TrenchFET Power MOSFET 40 RDS(on) () at VGS = 10 V 0.0041 RDS(on) () at VGS = 4.5 V 0.0052 ID (A) • AEC-Q101 Qualifiedd • 100 % Rg and UIS Tested

Contextual Info: SQJ461EP www.vishay.com Vishay Siliconix Automotive P-Channel 60 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • AEC-Q101 Qualifiedd • 100 % Rg and UIS Tested