273 TJ Search Results
273 TJ Price and Stock
Panasonic Electronic Components ERJ-U1TJ273UThick Film Resistors - SMD 2512 5% 27Kohm Anti-Sulfur AEC-Q200 |
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ERJ-U1TJ273U |
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Panasonic Electronic Components ERJ-S1TJ273UThick Film Resistors - SMD 2512 27Kohms 5% Anti-Sulfur |
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ERJ-S1TJ273U |
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Honeywell Sensing and Control 060-0727-39TJA-01Honeywell MODEL TJE, 1250 PSIA |
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060-0727-39TJA-01 |
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Honeywell Sensing and Control 060-0727-32TJAPressure Sensors - Industrial AP122US,1A,2A,5B,6A:MODEL TJE, 0-32 inch |
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060-0727-32TJA |
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Seiko Epson Corporation SG-8018CG 12.2730M-TJHSA0Standard Clock Oscillators SG-8018CG 12.2730M-TJHSA0: MHZ OSC 1.8V 3.3V +/-50PPM -40 105C ST 1K TR |
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SG-8018CG 12.2730M-TJHSA0 |
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273 TJ Datasheets Context Search
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ICS9169C-273
Abstract: ICS9169CJ-273 ICS9169CM-273
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ics9169c-273ics9169cm-273ics9169cj-273 | |
ICS9169C-273
Abstract: ICS9169CJ-273 9169c-273
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ics9169c-273ics9169cj-2739169c-273 | |
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Contextual Info: User's Guide SLUU916 – April 2012 WCSP-Packaged bq24272/273 Evaluation Modules The bq24272/273 evaluation module is a complete charger module for evaluating compact, flexible, highefficiency, switch-mode charge management solution for single-cell, Li-ion and Li-polymer batteries used |
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sluu916bq24272/273bq2427x | |
MQ 6 SENSORContextual Info: SEMIKRON SKiiP 292 GH 170 - 273 CTV Absolute Maximum Ratings Sym bol |c o n d itio n s 1> Values Units 1700 V IGBT & Inverse Diode V cE S SKiiPPACK SK integrated intelligent Power PACK halfbridge SKiiP 292 GH 170 + Driver 273 CTV 7 13 V c c 9> O perating DC link voltage |
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arketin\datenbl\skiippac\sensor\d292ghmq 6 sensor | |
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Contextual Info: SKiiP 292 GH 170 - 273 CTV Absolute Maximum Ratings Symbol 4 Visol Top ,Tstg Conditions 1) Values AC, 1min Operating / stor. temperature IGBT and InverseDiode VCES 5) VCC Operating DC link voltage IC IGBT 3) Tj IGBT + Diode IF Diode IFM Diode, tp < 1 ms IFSM |
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IGBT 200A 1200V semikron
Abstract: diode B7
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igbt 200a 1200v semikrondiode b7 | |
74LS273
Abstract: 74LS273PC pin diagram of 74LS 54LS273DM 54LS273FM 74LS273DC 74LS273FC pin diagram of 74ls273
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54ls/74ls27320-pin74ls273pc74ls273dc+7 | |
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Contextual Info: SiHG47N65E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Generation Two 700 RDS(on) max. at 25 °C () VGS = 10 V • Low Figure-of-Merit (FOM) Ron x Qg 0.072 Qg max. (nC) 273 • Low Input Capacitance (Ciss) |
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sihg47n65eo-247ac2002/95/ec2011/65/eu+2 | |
UDC 1700
Abstract: skiip gh
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igbt11rthjs10udc 1700skiip gh | |
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Contextual Info: SKiiP 292 GH 170 - 273 CTV Absolute Maximum Ratings Symbol 4 Conditions 1) Values Visol Top ,Tstg AC, 1min Operating / stor. temperature IGBT and VCES 5) VCC IC 3) Tj IF IFM IFSM 2 I t Diode) Driver VS1 VS2 fsmax dV/dt Diode Operating DC link voltage IGBT |
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BOSCH ABS 8.1
Abstract: Bosch 8.0 abs diagram Bosch 5.7 abs bosch abs 5.4 bosch abs sensor
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bma18012-pinbst-bma180-ds000-03bosch abs 8.1+4 | |
ZSA5MA27Contextual Info: SURGE SUPPRESSOR DIODE ZSA5MA27 FEATURES OUTLINE DRAWING • High transient reverse power capability suitable for protecting automobile electronic components etc. Unit in mm inch Direction of polarity 273 16A Cathode band(White) Type mark(White) 5 2.8 2.8 |
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zsa5ma27pde-zsa5ma27-0 | |
ZSA5MA27Contextual Info: SURGE SUPPRESSOR DIODE ZSA5MA27 FEATURES OUTLINE DRAWING • High transient reverse power capability suitable for protecting automobile electronic components etc. Unit in mm inch Direction of polarity 273 16A Cathode band(White) Type mark(White) 5 2.8 2.8 |
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zsa5ma27 | |
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Contextual Info: SiHW47N65E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. RDS(on) max. at 25 °C () • Generation Two 700 VGS = 10 V • Low Figure-of-Merit (FOM) Ron x Qg 0.072 Qg max. (nC) 273 • Low Input Capacitance (Ciss) |
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sihw47n65eo-247ad2002/95/ec2011/65/eu+2 | |
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Contextual Info: SiHG47N65E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Low figure-of-merit (FOM) Ron x Qg 700 RDS(on) max. at 25 °C (Ω) VGS = 10 V • Low input capacitance (Ciss) 0.072 Qg max. (nC) 273 • Reduced switching and conduction losses |
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sihg47n65eo-247ac2002/95/ec2011/65/eu+2 | |
6p7rContextual Info: OSLON SSL Ceramic package - 150° radiation pattern Lead Pb Free Product - RoHS Compliant LUW CPDP Released Besondere Merkmale • Gehäusetyp: SMD-Keramikgehäuse mit Silikonverguss und Linse • Typischer Lichtstrom: 116 lm bei 350 mA und bis zu 273 lm bei 1 A |
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12-mm600/rolle6p7r | |
MB87Q3140
Abstract: MB87Q3141 MB87Q3141RB-GE1 xbee TRC1000 program eeprom 24c32
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mb87q3140rb-gmb87q3141rb-gnode1006node1003+7 | |
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Contextual Info: SiHW47N65E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. RDS(on) max. at 25 °C () • Low figure-of-merit (FOM) Ron x Qg 700 VGS = 10 V • Low input capacitance (Ciss) 0.072 Qg max. (nC) 273 • Reduced switching and conduction losses |
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sihw47n65eo-247ad2002/95/ec2011/65/eu+2 | |
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Contextual Info: SiHG47N65E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Low figure-of-merit (FOM) Ron x Qg 700 RDS(on) max. at 25 °C () VGS = 10 V • Low input capacitance (Ciss) 0.072 Qg max. (nC) 273 • Reduced switching and conduction losses |
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sihg47n65eo-247ac2002/95/ec2011/65/eu+2 | |
t1d6Contextual Info: STANDARD MICROSYSTEMS CORPORATION, 55 Marcus Blvd. nauppauge ny h7M <5161 273-3100 COM20010 •NT S DIVISION PRELIMINARY Fjx <516» 231-600« COM20010 ULANC Universal Local Area Network Controller with 1K x 8 On-Board RAM • • • • • • • • • |
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com2001024-pin28-pinrs485+1 | |
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Contextual Info: 273 EHSemiconductor National ä ä 54FCT/74FCT273 Octal D Flip-Flop General Description Features The 'FCT273 has eight edge-triggered D-type flip-flops with individual D inputs and Q outputs. The common buffered Clock CP and Master Reset (MR) input load and reset |
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54fct/74fct273fct273 | |
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Contextual Info: SKKT 273/16 E Absolute Maximum Ratings Symbol Conditions Values Unit A Chip Tc = 85 °C 274 Tc = 100 °C 204 A Tj = 25 °C 9000 A Tj = 130 °C 8000 A Tj = 25 °C 405000 A²s Tj = 130 °C 320000 A²s VRSM 1700 V VRRM 1600 V IT AV ITSM i2t SEMIPACK 3 Thyristor Modules |
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Contextual Info: SKKT 273/16 E Absolute Maximum Ratings Symbol Conditions Values Unit Tc = 85 °C 274 A Tc = 100 °C 204 A Tj = 25 °C 9000 A Tj = 130 °C 8000 A Tj = 25 °C 405000 A²s Tj = 130 °C 320000 A²s VRSM 1700 V VRRM 1600 V Chip IT AV ITSM i2t SEMIPACK 3 Thyristor Modules |
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Contextual Info: s e MIKROn SKiiP 292 GH 170 - 273 CTV Absolute Maximum Ratings Symbol |Conditions1> IGBT & Inverse Diode VcES V c c 9 Operating D C link voltage lc Theatsink T , 3' IGBT & Diode A C, 1 min. V is o i4 If ~ 25 C = 25 °C Theatsink —25 °C; tp < 1 ms tp = 10 ms; sin,; Tj = 150 °C |
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