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    SIHG47N65E Search Results

    SIHG47N65E Datasheets (1)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    SIHG47N65E-GE3
    Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 650V 47A TO-247AC Original PDF 7
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    SIHG47N65E Price and Stock

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    Vishay Siliconix SIHG47N65E-GE3

    MOSFET N-CH 650V 47A TO247AC
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    DigiKey SIHG47N65E-GE3 Tube 463 1
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    Vishay Intertechnologies SIHG47N65E-GE3

    N-CHANNEL 650V - Tape and Reel (Alt: SIHG47N65E-GE3)
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    EBV Elektronik SIHG47N65E-GE3 23 Weeks 25
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    Vishay Intertechnologies SIHG47N65E-GE3 (E SERIES)

    Mosfet, N-Ch, 650V, 47A, To-247Ac Rohs Compliant: Yes |Vishay SIHG47N65E-GE3
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    Newark SIHG47N65E-GE3 (E SERIES) Bulk 411 1
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    Vishay Semiconductors SIHG47N65E-GE3

    MOSFET N-CH 650V 47A TO247AC
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    Onlinecomponents.com SIHG47N65E-GE3 176
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    SIHG47N65E Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: SiHG47N65E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Low figure-of-merit (FOM) Ron x Qg 700 RDS(on) max. at 25 °C () VGS = 10 V • Low input capacitance (Ciss) 0.072 Qg max. (nC) 273 • Reduced switching and conduction losses


    Original
    SiHG47N65E O-247AC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Contextual Info: SiHG47N65E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Generation Two 700 RDS(on) max. at 25 °C () VGS = 10 V • Low Figure-of-Merit (FOM) Ron x Qg 0.072 Qg max. (nC) 273 • Low Input Capacitance (Ciss)


    Original
    SiHG47N65E O-247AC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Contextual Info: SiHG47N65E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Low figure-of-merit (FOM) Ron x Qg 700 RDS(on) max. at 25 °C (Ω) VGS = 10 V • Low input capacitance (Ciss) 0.072 Qg max. (nC) 273 • Reduced switching and conduction losses


    Original
    SiHG47N65E O-247AC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Contextual Info: SiHG47N65E_RC www.vishay.com Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter


    Original
    SiHG47N65E AN609, 9059m 3887m 1860m 4652m 02-Apr-13 PDF

    AN844

    Contextual Info: VISHAY SILICONIX www.vishay.com Power MOSFETs Application Note - AN844 How to Select the Right MOSFET for Power Factor Correction Applications Power factor is the ratio of the real power P = Watts to the apparent power (VA = Volt Ampere); the goal is to achieve a power


    Original
    AN844 SiHx15N65E SiHx22N65E SiHx24N65E SiHx5N50D SiHx8N50D SiHx3N50D SiHx12N50C AN844 PDF

    VJ Hi-Rel

    Contextual Info: Vishay Intertechnology, Inc. Medical Medical Equipment One of the World’s Largest Manufacturers of Discrete Semiconductors and Passive Components MED I CAL Medical Medical More information on the Engineer’s Toolbox, including product datasheet links, can be found at www.vishay.com/ref/et3.


    Original
    SFH6732 VMN-MS6984-1410-ME VJ Hi-Rel PDF