SIHW47N65E Search Results
SIHW47N65E Datasheets (1)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| SIHW47N65E-GE3 | Vishay Siliconix | FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 650V 47A TO-247AD | Original | 7 | 
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| Vishay Siliconix SIHW47N65E-GE3MOSFET N-CH 650V 47A TO247AD | |||||||||||
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|   | SIHW47N65E-GE3 | Tube | 500 | 
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| Vishay Intertechnologies SIHW47N65E-GE3- Tape and Reel (Alt: SIHW47N65E-GE3) | |||||||||||
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|   | SIHW47N65E-GE3 | Reel | 19 Weeks | 500 | 
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|   | SIHW47N65E-GE3 | 20 Weeks | 480 | 
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SIHW47N65E Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
| Contextual Info: SiHW47N65E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. RDS(on) max. at 25 °C () • Generation Two 700 VGS = 10 V • Low Figure-of-Merit (FOM) Ron x Qg 0.072 Qg max. (nC) 273 • Low Input Capacitance (Ciss) | Original | SiHW47N65E O-247AD 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
| Contextual Info: SiHW47N65E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. RDS(on) max. at 25 °C () • Low figure-of-merit (FOM) Ron x Qg 700 VGS = 10 V • Low input capacitance (Ciss) 0.072 Qg max. (nC) 273 • Reduced switching and conduction losses | Original | SiHW47N65E O-247AD 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 |