26M 17A Search Results

5569262-1

Contextual Info: 6 7 THIS DRAWING IS UNPUBLISHED. COPYRIGHT - 5 2 3 4 RELEASED FOR PUBLICATION By - AA -59.1 8 [ 2 . 3 3 ] - REVISIONS DIST LOC ALL RIGHTS RESERVED. 22 LTR B2 DESCRIPTION REVISED PER DATE 26M AR1• ECO-11-005033 APVD DWN RK HMR ■ 28.45 [ 1 . 1 2 ] . 25[ . O 1 O]

21F1SC

Abstract: 55M15A 3A10 21F15B 21F 15C 44.9625 90R20B 21M12B 21M12C 21M15D
Contextual Info: M o n o u th ic C r ysta l F ilter s UMCF/MCF C2, D2 M e ta l P ackages E l e c t r ic a l S p e c if ic a t io n s P ass N o M OF o d el P 2 1 M H z S e r ie s N o m in a l mourner 2 1 .4 0 0 2 1 .4 5 0 2 1 .6 0 0 2 1 .7 0 0 2 6 .0 5 0 2 9 .2 5 0 M Hz M Hz

SM81A

Contextual Info: FSJ9260D, FSJ9260R 33 HARRIS SEMICONDUCTOR 27A, -200V, 0.130 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs Features Description • 27A, -200V, rDS ON = 0.13012 The Discrete Products Operation ot Harris Semiconductor has developed a series of Radiation Hardened MOSFETs

270KB

Abstract: RCH-114 RCH114NP-332KB RCH-114NP-390K
Contextual Info: PIN Power Inductor RCH114 Description • Ferrite drum core construction. • Magnetically unshielded. • L W H: 10.5 10.5 14.4mm Max. • Product weight: 4.1g Ref. • Moisture Sensitivity Level: 1 • RoHS compliance. • Halogen Free available. RoHS x ×

D1302

Abstract: TIL78 d1302 transistor TIXS79 D1178 D1185 til78 phototransistor 2n318 D1202 DNX4
Contextual Info: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k I B H H TYPE No. ABSOiLOTE MAX. RATIINGS Ä 2 5 C MAX. 1 hFE I I MIN. MAX Pc T6TT

FOR5J

Abstract: GTO thyristor 100A, 400V TO-220AH TSZ25G 5F13 TSS1G41 s6565g GTO thyristor 5A, 400V MSG100L41 TSS2G41S
Contextual Info: [ Thyristors P h a s e Control T h yristo rs : * i'eak off state v<>!t,tK<‘ and tewrse voilage Average "n-state current 50V 0. IA 0.3A 0.5A IA 2A S F 0 K ÎA 4 2 3A 100V SF0 R 1 H 4 2 SF0 R 3 H 4 2 SFOH5H43 SM H12 S F2 B 4 1 SF3 H 1 4 SF3H41 SF3 H 4 2 SF5 H 1 3

Contextual Info: QS20.244 24V, 20A, SINGLE PHASE INPUT Q-Series POWER SUPPLY ̇ ̇ ̇ ̇ ̇ ̇ ̇ ̇ ̇ ̇ ̇ AC 200-240V Input Width only 70mm Efficiency up to 94.5% Very Low No-load Losses 150% 720W Peak Load Capability Safe HiccupPLUS Overload Mode Easy Fuse Tripping due to High Overload Current

TIC 1160

Abstract: ic27m ne5205 NE5205EC
Contextual Info: NE/SA/SE5205 Signefícs Wide-band High-Frequency Amplifier Product Specification Linear Products DESCRIPTION The NE/SA/SE5205 is a high-frequency amplifier with a fixed insertion gain of 20dB. The gain is flat to ± 0.5dB from DC to 450MHz, and the -3dB bandwidth is

IR3P59A

Contextual Info: TV M PX Demodulator /IR3P59A • IR3P59A TV MPX Demodulator Qapan D es crip tio n ■ The IR3P59A is a demodulation IC for the TV sound multiplex broadcast serviced in Japan. Incor­ porating an active filter, it operates with a very small number of external elem ents. Since it also has a re­

calculating circuit breaker MTBF

Contextual Info: QS20.241, QS20.241-A1, QS20.241-C1 24V, 20A, SINGLE PHASE INPUT Q-Series POWER SUPPLY ̇ ̇ ̇ ̇ ̇ ̇ ̇ ̇ ̇ ̇ ̇ ̇ ̇ ̇ ̇ AC 100-240V Wide-range Input Width only 82mm Efficiency up to 93.9% ATEX and IECEx Approved -A1 Version -C1 Version with Conformal Coated PC-board

TIC 1160

Abstract: TIC 26M
Contextual Info: Product specification Philips Semiconductors-Signetlcs RF Communications Producís NE/SA/SE5205A Wide-band high-frequency amplifier DESCRIPTION S O p a cka ge to fu rth e r re duce parasitic T he N E /S A /S E 5 205A fa m ily o f w id e b a n d effects.

Contextual Info: INTEGRATED CIRCUITS [M m m m XA-SCC CMOS 16-bit communications microcontroller Preliminary specification 1999 Feb 23 IC25 Data Handbook Philips Semiconductors PHILIPS Philips Semiconductors Preliminary specification CMOS 16-bit communications microcontroller

220-10L

Abstract: similar ic xa 222 MA12 MA13 MA15 MA22 MA23 892H
Contextual Info: Philips Sem iconductors Prelim inary specification CM O S 16-bit co m m unications m icrocontroller G E N E R A L D ES C R IP TIO N XA -SC C • M e m o ry c o n tro lle r a ls o g e n e ra te s 6 ch ip se le c ts to s u p p o rt T h e X A -S C C d e v ic e is a m e m b e r o f P h ilip s ’ X A e x te n d e d

2N2222A 338

Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
Contextual Info: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK

sumitomo 05F

Abstract: 26AF 24AD 2G 18ac AU-AIS GR-253 S1202 S3032 AF3A
Contextual Info: S1202 Nile Device Specification Revision NC June 14, 2000 AMCC Part Number S1202 Revision NC - June 2000 NILE DEVICE SPECIFICATION STS-12 ATM/DS3 SONET MAPPER General Description Features • Processes valid combinations of SONET/SDH STS-12c/AU-4-4c, STS-3c/AU-4, or STS-1 tributaries

Sii 9573

Abstract: transistor 21Y S-8252 ed 7aa dude hx 630
Contextual Info: R O C K W E L L S E M I C O N D U C T O R S Y S T E M S access RS8250/1/2/3/4/5 ATM Physical Interface Devices - ATM PHY *Ü O ¥ ¡8 S N & B -, Rockwell September 1998 fô i S y s iiîs Preliminary Information This do cum e nt contains in fo rm a tio n on a pro du ct under developm ent. The param etric in fo rm a tio n contains target

st178

Abstract: diode E1110 CK705 ecg semiconductor replacement guide CS1237 ME1120 TE1088 1N942 1N733A Delco DTG-110B transistor
Contextual Info: S Y L V A N IA ECG S e m ic o n d u c to r L in eREPLACES OVER 35,000 TYPES introduction The ECG line of semiconductors is designed to minimize replacement parts inventory for the tech­ nician and yet economically meet replacement needs of the wide variety of entertainment equipment

2n7588

Abstract: P3139 BC233A sprague 40d GEX36/7 C4274 s1766 C12712 TC236 GP149
Contextual Info: SPRAGUE THE M A R K O F R E L I A B I L I T Y SEMICONDUCTOR REPLACEMENT MANUAL K -5 0 0 TABLE OF CONTENTS Guidelines for Replacing Semiconductors. 1 Specifications, Small-Signal and Power Transistors.

General Electric SCR Manual, Fifth Edition, 1972

Abstract: free transistor equivalent book 2sc tny 227 pn 270v varistor d - 302 Disc ceramic capacitor GE 130L20 Harris Transient Voltage Suppression Manual General Electric 250L40 GE Transient Voltage Suppression Manual GE MOV varistor varistor xf 030 Metal-Oxide Varistor Harris V420PA40C
Contextual Info: TRANSIENT VOLTAGE SUPPRESSION DEVICES 1995 ATVf\D\Ai A R R O W E L E C T R O N IC S , INC. A R R O W E L E C T R O N IC S C A N A D A LTD. 1 09 3 M E Y E R S ID E D R IV E M IS S IS S A U G A , O N TA R IO L5T 1M 4 905-670-7769 800-387-3962 FAX: 905-670-77P1

APY12

Abstract: BYY32 ac176 AEY26 BAV77 bby20 BD545B BAV27 transistor KT 209 M AF367
Contextual Info: Semiconductors Semiconducteurs Halbleiter YEARLY EDITION - EDITION AN N UELLE - jX H R LIC H E AU SG A BE SIXTH EDITION SIXIEME EDITION SECHSTE AUSGABE 1978 Compiled by: Association Internationale PRO ELECTRON, Bd. de Waterloo, 103, B 1000 BRUSSELS Published by: JE. E KLUWER, B 2100 DEURNE-ANTWERP

triac zd 607

Abstract: hep c6004 2sb504 2SC 968 NPN Transistor sje 607 motorola c6004 diode BY127 specifications K872 af118 Motorola Semiconductor hep c3806p
Contextual Info: & SEM ICO N DU CTO R This guide has been prepared by the Motorola HEP technical staff to provide a cross-reference for the Hobbyist, Experimenter, and Professional service techni­ cian. The information contained herein is based on an analysis of the published

mpc5517

Abstract: MPC5516E MPC5516 MPC5514 MPC5517E MAC MTA E200 MPC5515 FlexCAN MPC5510RM mpc5517 datasheet
Contextual Info: MPC5510 Microcontroller Family Reference Manual Devices Supported: MPC5517G/E/S MPC5516G/E/S MPC5515S MPC5514G/E Document Number: MPC5510RM Rev. 1 06/2008 PRELIMINARY How to Reach Us: Home Page: www.freescale.com Web Support: http://www.freescale.com/support

ASP-105884-01

Abstract: 13002 hj B1 PA66-GF13 5mm ldr ASP-105885-01 mj 13003 IRF 3055 DIN 16901 130 plastic PCI x1 express PCB dimensions artwork Training TV repair
Contextual Info: CONTENTS Board-to-Board Applications Fin al Inch P C B D esign T o o ls . 10-11 High S p eed Board-to-Board S y s te m s .12-27 M icro Pitch Board-to-Board S y s t e m s .28-37

y51 h 120c

Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
Contextual Info: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK