MA22 Search Results

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA22D21 Silicon epitaxial planar type For high frequency rectification Unit : mm • Features 0.80±0.05 1.6±0.1  IF(AV) = 1 A rectification is possible  Low forward voltag VF : VF < 0.38 V (at IF = 1 A)

MA22F20

Contextual Info: This product complies with RoHS Directive EU 2002/95/EC . Fast Recovery Diodes (FRD) MA22F200G Silicon epitaxial planar type For high speed switching circuits • Package  Super high speed switching characteristic (trr = 8 ns typ.)  At the same time as lowering the wiring inductance and increasing the peak

Contextual Info: This product complies with RoHS Directive EU 2002/95/EC . Fast Recovery Diodes (FRD) MA22F20 Silicon epitaxial planar type For high speed switching circuits • Package  Super high speed switching characteristic (trr = 8 ns typ.)  At the same time as lowering the wiring inductance and increasing the peak

MA205WK

Abstract: MA206 MA207 MA221 MA222 MA223 MA291 MA858 MA859 MC2336
Contextual Info: -161 fe M m % a £ Vrrm Vr Io, I f * T f c f t I I fm UH fsm V (V) (mA) fóT 80 40 80 35 50 80 40 80 35 50 225 200 200 225 225 100* 1 00 * 100* 100* 100* 0. 5 MA223 MA291 MA856 MA858 MA859 të T fô T f ô “F fâ T fô T 75 250 75 200 30 30 35 225 300

a2240

Abstract: uA2240 UA224 MA2240DC MA2240C uA2240 time setting *A2240
Contextual Info: F A I R C H MA2240 Programmable Timer/Counter I L D A Schlumberger Company Linear Division Special Functions Description The juA2240 Programmable Timer/Counter is a monolithic controller capable of producing accurate microsecond to five day time delays. Long delays, up to three years, can

MA22D15

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA22D15 Silicon epitaxial planar type For high frequency rectification • Features Unit: mm 0.80±0.05 1.6±0.1 1 0 to 0.1 5˚ 2.6±0.1 3.5±0.1 • IF(AV) = 1 A rectification is possible

Contextual Info: Schottky Barrier Diodes SBD MA22D40 Silicon epitaxial planar type For high speed switching circuits Unit: mm • Features 0.80±0.05 1.6±0.1  Reverse voltage VR = 60 V is guaranteed  Small reverse current IR 1 2.6±0.1 3.5±0.1 0 to 0.1 Rating Unit

Contextual Info: Schottky Barrier Diodes SBD MA22D21 Silicon epitaxial planar type For high frequency rectification Unit : mm • Features 0.80±0.05 1.6±0.1  IF(AV) = 1 A rectification is possible  Low forward voltag VF : VF < 0.38 V (at IF = 1 A)  High non-repetitive peak forward surge voltage

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA22D39 Silicon epitaxial planar type For high speed switching circuits • Features  Package  Optimum for forward current (Effective value) IF(RMS) = 1.57 A rectification

Contextual Info: Enhanced downsizing and power saving in power supply circuits in mobile applications 1 to 1.5A class Schottky Barrier Diode MA21Dx××G/MA22D×××G Series „ Overview This newly developed 1 to 1.5A class of Schottky barrier diode is compact and high-performance, suitable for power

MA22D15

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA22D15 Silicon epitaxial planar type For high frequency rectification M Di ain sc te on na tin nc ue e/ d • Features Unit: mm 0.80±0.05 1.6±0.1 1 0 to 0.1 5˚

MA22D410G

Abstract: MA22D41
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA22D410G Silicon epitaxial planar type For rectification • Overview  Package  Forward current (Average) IF(AV) = 2.0 A rectification is possible  Low forward voltage VF

Contextual Info: Ultrafast trr and low VF characteristics contribute to reduced loss. 200V,400V/1A Fast Recovery Diodes MA22F200G/MA24F41 „ Overview The MA22F20 and MA24F41 are fast recovery diodes that significantly reduce power loss during switching recovery due to a device design that minimizes the forward voltage VF .

MA22D17

Contextual Info: Schottky Barrier Diodes SBD MA22D17 Silicon epitaxial planar type For high frequency rectification Unit: mm • Features 0.80±0.05 1.6±0.1  Reverse voltage VR = 100 V is guaranteed  High non-repetitive peak forward surge current: IFSM = 20 A 1 2.6±0.1

MA22D400G

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA22D400G Silicon epitaxial planar type For high speed switching circuits • Package  Reverse voltage VR = 60 V is guaranteed  Small reverse current IR 

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA22D40 Silicon epitaxial planar type For high speed switching circuits Unit: mm • Features 0.80±0.05 1.6±0.1  Reverse voltage VR = 60 V is guaranteed  Small reverse current IR

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA22D23 Silicon epitaxial planar type Unit: mm For high frequency rectification 0.80±0.05 1.6±0.1 1 • Features 0 to 0.1 5˚ 2.6±0.1 3.5±0.1 • IF(AV) = 1 A rectification is possible.

MA22F20

Contextual Info: This product complies with RoHS Directive EU 2002/95/EC . Fast Recovery Diodes (FRD) MA22F20 Silicon epitaxial planar type For high speed switching circuits • Features  Package  Super high speed switching characteristic (trr = 8 ns typ.)  At the same time as lowering the wiring inductance and increasing the peak

Contextual Info: Enhanced downsizing and power saving in power supply circuits in mobile applications 1 to 1.5A class Schottky Barrier Diode MA21Dx×/MA22D×× Series „ Overview This newly developed 1 to 1.5A class of Schottky barrier diode is compact and high-performance, suitable for power

MA22D28

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA22D28 Silicon epitaxial planar type For high speed switching M Di ain sc te on na tin nc ue e/ d • Features Unit: mm 0.80±0.05 1.6±0.1 1 0 to 0.1 2 Rating Unit

MC921

Abstract: MA205WK MA206 MA207 MA221 MA222 MA223 MA291 MA858 MA859
Contextual Info: -161 M m % a £ Vrrm Vr UH 15 IS] f t fé fe I fm Io, I f * T fc ft I fsm T fc # VFiiiax V (V) (mA) (°C> fó T 80 40 80 35 50 80 40 80 35 50 225 200 200 225 225 100* 100* 100* 100* 100* 0. 5 MA223 MA291 MA856 MA858 MA859 të T fô T fô “F fâ T fô T

ma22d23

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA22D23 Silicon epitaxial planar type M Di ain sc te on na tin nc ue e/ d For high frequency rectification • Package ■ Features • Code Mini2-F1 • Pin Name

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA22D40 Silicon epitaxial planar type For high speed switching circuits Unit: mm • Features 0.80±0.05 1.6±0.1  Reverse voltage VR = 60 V is guaranteed  Small reverse current IR

MA22D150G

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA22D150G Silicon epitaxial planar type M Di ain sc te on na tin nc ue e/ d For high frequency rectification • Package • IF(AV) = 1 A rectification is possible