MA859 Search Results

MA205WK

Abstract: MA206 MA207 MA221 MA222 MA223 MA291 MA858 MA859 MC2336
Contextual Info: -161 fe M m % a £ Vrrm Vr Io, I f * T f c f t I I fm UH fsm V (V) (mA) fóT 80 40 80 35 50 80 40 80 35 50 225 200 200 225 225 100* 1 00 * 100* 100* 100* 0. 5 MA223 MA291 MA856 MA858 MA859 të T fô T f ô “F fâ T fô T 75 250 75 200 30 30 35 225 300

MC921

Abstract: MA205WK MA206 MA207 MA221 MA222 MA223 MA291 MA858 MA859
Contextual Info: -161 M m % a £ Vrrm Vr fe UH Io, If * T f c f t I f s m T f c # If m V (V) (mA) fóT 80 40 80 35 50 80 40 80 35 50 225 200 200 225 225 100* 100* 100* 100* 100* 0. 5 MA2 2 3 MA291 MA856 MA858 MA859 tëT fôT fô“ F fâT fôT 75 250 75 200 30 30 35 225

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Band Switching Diodes MA2C859 (MA859) Silicon epitaxial planar type Unit: mm For band switching • Features 2.3±0.3 2.2±0.3 13.0 min. φ 0.40±0.05 13.0 min. M Di ain sc te on na tin nc ue e/

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Band Switching Diodes MA2C859 (MA859) Silicon epitaxial planar type Unit: mm For band switching • Features 13.0 min. 2.3±0.3 2.2±0.3 0.2 max. 13.0 min. φ 1.6±0.2 1 Cathode φ 0.40±0.05 • Extra-small DHD envelope, allowing to insert into a 5 mm pitch

MA2C859

Abstract: MA859 YHP4191A 41* RF tuner
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Band Switching Diodes MA2C859 (MA859) Silicon epitaxial planar type Unit: mm M Di ain sc te on na tin nc ue e/ d For band switching • Features 13.0 min. 2.3±0.3 2.2±0.3 13.0 min. 0.2 max. φ 1.6±0.2

MC921

Abstract: MA205WK MA206 MA207 MA221 MA222 MA223 MA291 MA858 MA859
Contextual Info: -161 M m % a £ Vrrm Vr UH 15 IS] f t fé fe I fm Io, I f * T fc ft I fsm T fc # VFiiiax V (V) (mA) (°C> fó T 80 40 80 35 50 80 40 80 35 50 225 200 200 225 225 100* 100* 100* 100* 100* 0. 5 MA223 MA291 MA856 MA858 MA859 të T fô T fô “F fâ T fô T

MA2C859

Abstract: MA859 YHP4191A PANASONIC MA2C859
Contextual Info: Band Switching Diodes MA2C859 MA859 Silicon epitaxial planar type Unit : mm For band switching φ 0.45 max. • Absolute Maximum Ratings Ta = 25°C Parameter Symbol Rating Unit Reverse voltage (DC) VR 35 V Forward current (DC) IF 100 mA Operating ambient temperature

MA2C859

Abstract: MA859 YHP4191A
Contextual Info: Band Switching Diodes MA2C859 MA859 Silicon epitaxial planar type Unit: mm For band switching • Features 13.0 min. 2.3±0.3 2.2±0.3 0.2 max. 13.0 min. φ 0.40±0.05 • Extra-small DHD envelope, allowing to insert into a 5 mm pitch hole • Less voltage dependence of the terminal capacitance Ct

MC921

Abstract: MA205WK MA206 MA207 MA221 MA222 MA223 MA291 MA858 MA859
Contextual Info: -161 m MA205WK MA206 MA207 MA221 MA 222 % a fóT MA223 MA291 MA856 MA858 MA859 të T fô T f ô “F fâ T fô T MA860 MA862 MA999 MC103A MC301 fô T MC302 MC911 MC921 MC931 MC932 MC2321 MC2325 MC2326 MC2335 MC2336 MC2355 MC2356 MC2525 MC2526 MC2535 MC2536

MC921

Abstract: MA205WK MA206 MA207 MA221 MA222 MA223 MA291 MA858 MA859
Contextual Info: -161 m MA205WK MA206 MA207 MA221 MA 222 % a fóT MA223 MA291 MA856 MA858 MA859 të T fô T f ô “F fâ T fô T MA860 MA862 MA999 MC103A MC301 fô T MC302 MC911 MC921 MC931 MC932 MC2321 MC2325 MC2326 MC2335 MC2336 MC2355 MC2356 MC2525 MC2526 MC2535 MC2536

MC921

Abstract: MA205WK MA206 MA207 MA221 MA222 MA223 MA291 MA858 MA859
Contextual Info: -161 m MA205WK MA206 MA207 MA221 MA 222 % a fóT MA223 MA291 MA856 MA858 MA859 të T fô T f ô “F fâ T fô T MA860 MA862 MA999 MC103A MC301 fô T MC302 MC911 MC921 MC931 MC932 MC2321 MC2325 MC2326 MC2335 MC2336 MC2355 MC2356 MC2525 MC2526 MC2535 MC2536

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Band Switching Diodes MA2C859 (MA859) Silicon epitaxial planar type Unit: mm For band switching 13.0 min. 2.3±0.3 2.2±0.3 0.2 max. 1 13.0 min. φ 1.6±0.2 Cathode 2 Anode di p Pl lan nclu ea

MA859

Abstract: "cathode indication" black
Contextual Info: MA111 Band Switching Diodes MA859 Silicon epitaxial planer type Unit : mm For band switching φ0.45 max. DHD envelope, enabling 5mm pitch insertion ● Less voltage dependence of the capacity Ct between pins ● Low forward dynamic resistance rf 2.2±0.3 1st Band

Contextual Info: Band Switching Diodes MA2C859 MA859 Silicon epitaxial planar type Unit: mm For band switching • Features 13.0 min. 2.3±0.3 2.2±0.3 0.2 max. 13.0 min. φ 1.6±0.2 1 Cathode φ 0.40±0.05 • Extra-small DHD envelope, allowing to insert into a 5 mm pitch

MC921

Abstract: MC911 MA205WK MA206 MA207 MA221 MA222 MA223 MA291 MA858
Contextual Info: -161 M m MA205WK MA206 MA207 MA221 MA 222 MA223 MA291 MA856 MA858 MA859 MA860 MA862 MA999 MC103A MC301 MC302 MC911 MC921 MC931 MC932 MC2321 MC2325 MC2326 MC2335 MC2336 MC2355 MC2356 MC2525 MC2526 MC2535 MC2536 MC2555 MC2SS6 MC2625 MC2626 MC2635 MC2636 MC2655

MC921

Abstract: MC921 005 MA205WK MA206 MA207 MA221 MA222 MA223 MA291 MA858
Contextual Info: -161 m MA205WK MA206 MA207 MA221 MA 222 % a fóT MA223 MA291 MA856 MA858 MA859 të T fô T f ô “F fâ T fô T MA860 MA862 MA999 MC103A MC301 fô T MC302 MC911 MC921 MC931 MC932 MC2321 MC2325 MC2326 MC2335 MC2336 MC2355 MC2356 MC2525 MC2526 MC2535 MC2536

8893 single chip tv processor

Abstract: transistor tt 2170 em AN7156N an8294nsb Color TV circuit 8893 AN8782SB mn150832 mip160 mn12510 mn662741
Contextual Info: Application Block Diagrams • Video Applications VC R System Remote Control Transmission MN171608/9 MN15*13 LN66A I Display I Cylinder Motor Drive AN3813/14/15 f FL Dr MN12510 Capstan Motor Drive AN3840N V r I Remote Control Reception}] MN6750*8/9/6755—7

Contextual Info: Diodes • Silicon Diodes Switching Vr Type No. (V ) If Ir * Ir (AV) max. (nA) (mA) CD max. *typ. (pF) trr max. (ns) Package Vr Type No. (V ) N o. If Ir * Ir (av) max. (nA) (mA) Co max. *typ. trr max. (ns) Package No. (P F ) MA111 « 80 100 100 1.2 3 S Mini (2 pins)

MA154WA

Abstract: MA162 MA177 MA10152D MA171 ma27q MA27 MA27T Bta MA10152K MA1015
Contextual Info: Diodes I Silicon Diodes Switching Type No. V If r (mA) max. (nA) * I r (AV) (V ) Ir CD max. *typ. (pF) Co trr max. (ns) Package No. Type No. V If Ir (mA) max. (nA) max. * typ. (PF) r * I r (a v ) (V ) trr max. (ns) Package No. S M in i (2 pins) D3 M A176W K

ON3105

Abstract: 2sd2603 mn4117405 2sc901b mn6520 MN1280 mn1225 MN6147C 2SC5573 GN2013
Contextual Info: Discontinued Types • Discontinued Types ● MOS LSIs Part No. Alternative Part No. MN1001 MN1020215 MN1020407 MN1020415 MN1020715 MN102LF53G MN1040 MN110 MN1101 MN115 MN115P MN116 MN116P MN1250 MN1250B MN1250BJC MN12510 MN1252 MN1252A MN1252B MN1252B1 MN1252B1S

AN3962FB

Abstract: MN1880023 mn19412 MN1874033 IC AN7135 an3814k MN1883214 an8294nsb mn4117405 mn171202
Contextual Info: umb Type No. Page MOS L Type No. Page Type No. Page Type No. MN151614 43 MN1882417 45 ▲ MN151630 43 MN1882421 46 MN3204 • MN3200 Series Page Type No. Page MN56000 Series 58 63 MN56020 58 68 • O M N 101C 01A 46 MN152810 43 MN188321 45 MN3205 68 MN56030

15W ZENER DIODES

Abstract: bidirectional zener diodes ma27w MA28T PANASONIC MA4000 ma27 MINI 29 MA3062W MA75WA
Contextual Info: Diode • Silicon Diodes AVC Vr (V) Type No. ■ Silicon Diodes (Band Switch) AM f t A l VF (V) Ifm (mA) typ (mV/C) Package MA27/29 6 150 0.56 -0 .6 4 2 DO-35/34 D 28/26 MA27W/29W 6 100 1.18 -1 .3 6 4.6 DO-35/34 D 28/2S MA27T/29T 6 MA27Q/29Q 70 6 50 1.76 -2 .0 4

DIODE S4 29

Contextual Info: £•< K/Diodes J [ — K i^p p + S ^p p —R i l / L i s t of Diode E quivalent Products f f ^ t t i ; o t ' T £ ± l C - S S L T i ' & ' i ' i I £ 4 ' £ U ST<T>?\ <£< <r'{iJ5CQ±, c?i'„ The characteristics of the equivalent products do not always agree with those of the diode products. Therefore, be

A4056

Abstract: A4047 D83 ZENER MA2430 A4091 MA207 460 00 16 A4100 A4160 A3100W MA2Z200
Contextual Info: ) ì ) Switching Diodes Line-up S S Mini Type 3 Pin) S Mini Type (2 Pin) S Mini Type (3 Pin) S Mini Type (4 Pin) S Mini Type (6 Pin) Glass Hole-through type Surface Mount Type Mini Type (3 Pin) Mini Type (4 Pin) Mini Type (6 Pin) T Mini Type (3 Pin) M Type