26DEC11 Search Results

Contextual Info: 4 2 3 T H IS DRAW ING IS U N P U B L IS H E D . R E LE A S E D FO R P U B LIC A TIO N LOC ALL RIGHTS R ESERVED . AF REVISIONS D IS T 50 D E S C R IP T IO N REVISED PER E C R - 1 1 - 0 1 8 0 6 3 26DEC11 DWN APVD KH PD D -7 .6 5 [.3 0 1 ] [.7 7 5 ] C - 4.44 [ .1 7 5 ]

Contextual Info: 2 4 T H IS D R A W IN G S U N P U B L IS H E D . RELEASED FO R ALL C O P Y R IG H T By P U B L IC A T IO N R IG H TS - .- R E V IS IO N S 50 RESERVED. - LTR D E S C R IP T IO N R EVISED PER DATE E C R - 1 1-01 806 3 C O N T IN U O U S STRESS 26DEC11 S TR IP

Contextual Info: 4 T H IS D R A W IN G S 2 U N P U B L IS H E D . RELEASED FO R ALL C O P Y R IG H T By P U B L IC A T IO N R IG H TS - R E V IS IO N S .- 50 RESERVED. - LTR D E S C R IP T IO N R EVISED PER DATE E C R - 1 1-01 806 3 26DEC11 DWN APVD KH PD P D 1 CONTINUOUS

Contextual Info: 2 4 T H IS D R A W IN G IS U N P U B L IS H E D . RELEASED FO R ALL C O P Y R IG H T By P U B L IC A T IO N R IG H TS R E V IS IO N S 50 RESERVED. - LTR D E S C R IP T IO N R EVISED PER DATE E C R - 1 1-01 806 3 26DEC11 DWN APVD KH PD D 1 CONTINUOUS STRIP

Contextual Info: 4 T H IS D R A W IN G IS 2 U N P U B L IS H E D . RELEASED FO R ALL C O P Y R IG H T By P U B L IC A T IO N R IG H TS - .- R E V IS IO N S RESERVED. 50 - LTR D E S C R IP T IO N R EVISED PER DATE E C R - 1 1-01 806 3 26DEC11 DWN A PVD KH PD D 7.62 [730CT]-

Contextual Info: SiR698DP Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)a RDS(on) (Ω) Max. 100 0.195 at VGS = 10 V 7.5 0.230 at VGS = 6 V 6.9 Qg (Typ.) 5.2 nC PowerPAK SO-8 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET

SiA445EDJ

Abstract: SIA445EDJ-T1-GE3
Contextual Info: New Product SiA445EDJ Vishay Siliconix P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) Max. ID (A) 0.0165 at VGS = - 4.5 V - 12a 0.0185 at VGS = - 3.7 V - 12a 0.0300 at VGS = - 2.5 V a Qg (Typ.) 23 nC - 12 PowerPAK SC-70-6L-Single

Contextual Info: Si2302DDS Vishay Siliconix N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) Max. ID (A) 0.057 at VGS = 4.5 V 2.9 0.075 at VGS = 2.5 V 2.6 Qg (Typ.) 3.5 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET

Contextual Info: SiR698DP Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)a RDS(on) (Ω) Max. 100 0.195 at VGS = 10 V 7.5 0.230 at VGS = 6 V 6.9 Qg (Typ.) 5.2 nC PowerPAK SO-8 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET

Contextual Info: Si8416DB Vishay Siliconix N-Channel 8 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) Max. ID (A)d 0.023 at VGS = 4.5 V 16 0.025 at VGS = 2.5 V 16 0.030 at VGS = 1.8 V 16 0.040 at VGS = 1.5 V 15 0.095 at VGS = 1.2 V 3 VDS (V) 8 Qg (Typ.) 17 nC S •

Contextual Info: NOTES: 1. MATERIALS AND FINISHES PLATING THICKNESS IN MICRO-INCHES : BODY - BRASS, NICKEL PLATING CONTACT - BRASS, SILVER PLATING INSULATOR - COPOLYMER OF STYRENE 2 . ELECTRICAL: A. IMPEDANCE: 50 OHM B. FREQUENCY RANGE: DC 0 - 4 GHz C. DIELECTRIC WITHSTANDING VOLTAGE:

Contextual Info: R E VIS IO N S THIRD ANGLE PROJ. NOTES: 1. MATERIALS AND FINISHES PLATING THICKNESS IN MICRO-INCHES : BODY - BRASS, SILVER PLATING CONTACT - BRASS & BERYLLIUM COPPER, SILVER PLATING INSULATOR - PTFE, NATURAL 2 . ELECTRICAL: A. IMPEDANCE: 50 OHM B. FREQUENCY RANGE:

Contextual Info: SiR698DP Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)a RDS(on) (Ω) Max. 100 0.195 at VGS = 10 V 7.5 0.230 at VGS = 6 V 6.9 Qg (Typ.) 5.2 nC PowerPAK SO-8 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET

SI4554DY

Abstract: si4554
Contextual Info: Si4554DY Vishay Siliconix N- and P-Channel 40 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 40 P-Channel ID (A)a Qg (Typ.) RDS(on) (Ω) - 40 0.024 at VGS = 10 V 8e 0.026 at VGS = 8 V 8e 0.027 at VGS = 4.5 V 8 0.027 at VGS = - 10 V - 8e e 0.028 at VGS = - 8 V

Contextual Info: SiS410DN Vishay Siliconix N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0048 at VGS = 10 V 35 0.0063 at VGS = 4.5 V 35 VDS (V) 20 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg and UIS Tested

Marking Code 2526

Contextual Info: Si8416DB Vishay Siliconix N-Channel 8 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) Max. ID (A)d 0.023 at VGS = 4.5 V 16 0.025 at VGS = 2.5 V 16 0.030 at VGS = 1.8 V 16 0.040 at VGS = 1.5 V 15 0.095 at VGS = 1.2 V 3 VDS (V) 8 Qg (Typ.) 17 nC S • •

Contextual Info: SiR698DP Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)a RDS(on) (Ω) Max. 100 0.195 at VGS = 10 V 7.5 0.230 at VGS = 6 V 6.9 Qg (Typ.) 5.2 nC PowerPAK SO-8 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET

Si8416DB-T2-E1

Abstract: SI8416DB 63716 si8416
Contextual Info: Si8416DB Vishay Siliconix N-Channel 8 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) Max. ID (A)d 0.023 at VGS = 4.5 V 16 0.025 at VGS = 2.5 V 16 0.030 at VGS = 1.8 V 16 0.040 at VGS = 1.5 V 15 0.095 at VGS = 1.2 V 3 VDS (V) 8 Qg (Typ.) 17 nC S • •

Contextual Info: R E V IS IO N S THIRD ANGLE PROJ. NOTES: 1. MATERIALS AND FINISHES BODY - BRASS, NICKEL PLATING CONTACT - BERYLLIUM COPPER, SILVER PLATING INSULATOR - PTFE ELECTRICAL: 2 A. IMPEDANCE: 50 OHM C. FREQUENCY RANGE: DC 0 - 1 1 GHz C. DIELECTRIC WITHSTANDING VOLTAGE:

Contextual Info: SiR698DP Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)a RDS(on) (Ω) Max. 100 0.195 at VGS = 10 V 7.5 0.230 at VGS = 6 V 6.9 Qg (Typ.) 5.2 nC PowerPAK SO-8 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET

DIODE 2524

Contextual Info: SiR698DP Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)a RDS(on) (Ω) Max. 100 0.195 at VGS = 10 V 7.5 0.230 at VGS = 6 V 6.9 Qg (Typ.) 5.2 nC PowerPAK SO-8 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET

62553-1

Contextual Info: 2 4 T H IS D R A W IN G IS U N P U B L IS H E D . RELEASED EOR ALL C O P Y R IG H T By P U B L IC A T IO N R IG H TS REVISIO N S 50 RESERVED. - LTR D E S C R IP T IO N R EVISED D 1 1 .90 .075 1 .52 .060 PER CO NTINU O US 2 WIRE SIZE 3 INSULATION DATE E C R - 1 1-01 806 3

Contextual Info: 4 T H IS D R A W IN G IS U N P U B L IS H E D . 3 R ELEASED FOR A LL P U B L IC A T IO N R IG H TS RESERVED. C O P Y R IG H T D C I— .01 6 + .0 0 A 1471-9 3 / 11 LOC AF D IS T 50 REVISIO N S P LTR D E S C R IP T IO N P RE VISED 1 PER E C R - 1 1-01 8 0 6 3

si4554

Abstract: si4554dy
Contextual Info: Si4554DY Vishay Siliconix N- and P-Channel 40 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 40 P-Channel ID (A)a Qg (Typ.) RDS(on) (Ω) - 40 0.024 at VGS = 10 V 8e 0.026 at VGS = 8 V 8e 0.027 at VGS = 4.5 V 8 0.027 at VGS = - 10 V - 8e e 0.028 at VGS = - 8 V