SI2302DDS Search Results
SI2302DDS Datasheets (2)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| SI2302DDS-T1-BE3 | Vishay Siliconix | N-CHANNEL 20-V (D-S) MOSFET | Original | 213.55KB | 8 | ||
| SI2302DDS-T1-GE3 | Vishay Siliconix | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CHAN 20V SOT23 | Original | 213.51KB |
SI2302DDS Price and Stock
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Vishay Siliconix SI2302DDS-T1-GE3MOSFET N-CH 20V 2.9A SOT23-3 |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SI2302DDS-T1-GE3 | Cut Tape | 17,372 | 1 |
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SI2302DDS-T1-GE3 | 426,000 | 1 |
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Vishay Siliconix SI2302DDS-T1-BE3N-CHANNEL 20-V (D-S) MOSFET |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SI2302DDS-T1-BE3 | Digi-Reel | 7,405 | 1 |
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Vishay Intertechnologies SI2302DDS-T1-GE3N-CHANNEL 20-V (D-S) MOSFET - Tape and Reel (Alt: SI2302DDS-T1-GE3) |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SI2302DDS-T1-GE3 | Reel | 6,000 | 32 Weeks | 3,000 |
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SI2302DDS-T1-GE3 | 268,916 |
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SI2302DDS-T1-GE3 | 3,000 | 3,000 |
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SI2302DDS-T1-GE3 | 3,000 | 32 Weeks | 3,000 |
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SI2302DDS-T1-GE3 | Bulk | 3,724 | 5 |
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SI2302DDS-T1-GE3 | Reel | 9,000 | 3,000 |
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SI2302DDS-T1-GE3 | 3,419 | 1 |
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SI2302DDS-T1-GE3 | 585,000 |
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SI2302DDS-T1-GE3 | 17 Weeks | 3,000 |
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SI2302DDS-T1-GE3 | 33 Weeks | 3,000 |
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SI2302DDS-T1-GE3 | 42,000 | 3,000 |
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SI2302DDS-T1-GE3 | 36,507 |
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SI2302DDS-T1-GE3 | 366,000 | 1 |
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Vishay Intertechnologies SI2302DDS-T1-BE3N-CHANNEL 20-V (D-S) MOSFET - Tape and Reel (Alt: SI2302DDS-T1-BE3) |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SI2302DDS-T1-BE3 | Reel | 6,000 | 32 Weeks | 3,000 |
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SI2302DDS-T1-BE3 | 71,332 |
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SI2302DDS-T1-BE3 | 3,000 | 3,000 |
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SI2302DDS-T1-BE3 | 3,000 | 32 Weeks | 3,000 |
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SI2302DDS-T1-BE3 | 6,000 |
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SI2302DDS-T1-BE3 | 4,800 |
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SI2302DDS-T1-BE3 | Reel | 18,000 | 3,000 |
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SI2302DDS-T1-BE3 | 16,192 |
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Vishay Intertechnologies SI2302DDS-T1-GE3.Channel Type:N Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:2.6A; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:4.5V; Gate Source Threshold Voltage Max:-; Power Dissipation:710Mw; No. Of Pins:3Pins Rohs Compliant: No |Vishay SI2302DDS-T1-GE3. |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SI2302DDS-T1-GE3. | Reel | 6,000 | 3,000 |
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SI2302DDS Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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Contextual Info: Si2302DDS Vishay Siliconix N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) Max. ID (A) 0.057 at VGS = 4.5 V 2.9 0.075 at VGS = 2.5 V 2.6 Qg (Typ.) 3.5 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET |
Original |
Si2302DDS 2002/95/EC O-236 OT-23) Si2302DDS-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A | |
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Contextual Info: Si2302DDS_RC www.vishay.com Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter |
Original |
Si2302DDS AN609, 3004u 7423m 2575m 0840m 8155m 4711m 15-Apr-15 | |
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Contextual Info: Si2302DDS_RC www.vishay.com Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter |
Original |
Si2302DDS AN609, 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 |