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    SIS410DN Search Results

    SIS410DN Datasheets (1)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    SIS410DN-T1-GE3
    		Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 20V 35A PPAK 1212-8 Original PDF 13
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    SIS410DN Price and Stock

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    Vishay Siliconix SIS410DN-T1-GE3

    MOSFET N-CH 20V 35A PPAK 1212-8
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    DigiKey () SIS410DN-T1-GE3 Digi-Reel 6,629 1
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    SIS410DN-T1-GE3 Cut Tape 6,629 1
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    SIS410DN-T1-GE3 Reel 6,000 3,000
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    Vishay Intertechnologies SIS410DN-T1-GE3

    N-CHANNEL 20-V (D-S) MOSFET - Tape and Reel (Alt: SIS410DN-T1-GE3)
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    Avnet Americas SIS410DN-T1-GE3 Reel 32 Weeks 3,000
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    Mouser Electronics SIS410DN-T1-GE3 30,101
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    Verical SIS410DN-T1-GE3 6,000 3,000
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    Arrow Electronics SIS410DN-T1-GE3 6,000 32 Weeks 3,000
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    Newark SIS410DN-T1-GE3 Bulk 1
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    TTI SIS410DN-T1-GE3 Reel 6,000 3,000
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    TME SIS410DN-T1-GE3 1
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    EBV Elektronik SIS410DN-T1-GE3 33 Weeks 3,000
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    Vishay Semiconductors SIS410DN-T1-GE3

    POWER FIELD-EFFECT TRANSISTOR, 22A I(D), 20V, 0.0048OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET (Also Known As: SIS410DN)
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    Quest Components () SIS410DN-T1-GE3 2,895
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    SIS410DN-T1-GE3 2,895
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    Vishay Intertechnologies SIS410DNT1GE3

    N-CHANNEL 20 V (D-S) MOSFET Power Field-Effect Transistor, 22A I(D), 20V, 0.0048ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
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    ComSIT USA SIS410DNT1GE3 3,000
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    SIS410DN Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    SiS410DN-T1-GE3

    Contextual Info: SiS410DN Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0048 at VGS = 10 V 35 0.0063 at VGS = 4.5 V 35 VDS (V) 20 • Halogen-free • TrenchFET Power MOSFET • 100 % Rg Tested • 100 % UIS Tested Qg (Typ.)


    Original     		SiS410DN SiS410DN-T1-GE3 18-Jul-08 PDF

    Contextual Info: SiS410DN Vishay Siliconix N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a 0.0048 at VGS = 10 V 35 0.0063 at VGS = 4.5 V 35 VDS (V) 20 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg and UIS Tested


    Original     		SiS410DN 2002/95/EC SiS410DN-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    Contextual Info: SiS410DN Vishay Siliconix N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a 0.0048 at VGS = 10 V 35 0.0063 at VGS = 4.5 V 35 VDS (V) 20 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg and UIS Tested


    Original     		SiS410DN 2002/95/EC SiS410DN-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    SiS410DN-T1-GE3

    Contextual Info: SiS410DN Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0048 at VGS = 10 V 35 0.0063 at VGS = 4.5 V 35 VDS (V) 20 • Halogen-free • TrenchFET Power MOSFET • 100 % Rg Tested • 100 % UIS Tested Qg (Typ.)


    Original     		SiS410DN SiS410DN-T1-GE3 11-Mar-11 PDF

    Contextual Info: SiS410DN Vishay Siliconix N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0048 at VGS = 10 V 35 0.0063 at VGS = 4.5 V 35 VDS (V) 20 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg and UIS Tested


    Original     		SiS410DN 2002/95/EC SiS410DN-T1-GE3 11-Mar-11 PDF

    Contextual Info: SiS410DN Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0048 at VGS = 10 V 35 0.0063 at VGS = 4.5 V 35 VDS (V) 20 • Halogen-free • TrenchFET Power MOSFET • 100 % Rg Tested • 100 % UIS Tested Qg (Typ.)


    Original     		SiS410DN SiS410DN-T1-GE3 11-Mar-11 PDF

    Contextual Info: SPICE Device Model SiS410DN www.vishay.com Vishay Siliconix N-Channel 20 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original     		SiS410DN 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Contextual Info: SiS410DN Vishay Siliconix N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a 0.0048 at VGS = 10 V 35 0.0063 at VGS = 4.5 V 35 VDS (V) 20 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg and UIS Tested


    Original     		SiS410DN 2002/95/EC SiS410DN-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    Contextual Info: SiS410DN Vishay Siliconix N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a 0.0048 at VGS = 10 V 35 0.0063 at VGS = 4.5 V 35 VDS (V) 20 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg and UIS Tested


    Original     		SiS410DN 2002/95/EC SiS410DN-T1-GE3 11-Mar-11 PDF

    82377

    Contextual Info: SPICE Device Model SiS410DN Vishay Siliconix N-Channel 20-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the - 55 °C to 125 °C Temperature Range


    Original     		SiS410DN 18-Jul-08 82377 PDF

    AN609

    Contextual Info: SiS410DN_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/Tank and Cauer/Filter configurations are included. When implemented in P-Spice,


    Original     		SiS410DN AN609, 19-Sep-08 AN609 PDF

    Contextual Info: SiS410DN Vishay Siliconix N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a 0.0048 at VGS = 10 V 35 0.0063 at VGS = 4.5 V 35 VDS (V) 20 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg and UIS Tested


    Original     		SiS410DN 2002/95/EC SiS410DN-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    FSQ510 Equivalent

    Abstract: BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2
    Contextual Info: SEMICONDUCTORS MCU/MPU/DSP Atmel. . . . . . . . . 167, 168, 169, 170, 171, 172 Blackhawk. . . . . . . . . . . . . . . . . . . . . . . . . 173 Cyan . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 174 Cypress. . . . . . . . . . . . . . . 175, 176, 177, 178


    Original     		GP-20) FSQ510 Equivalent BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2 PDF

    si7121

    Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836
    Contextual Info: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®


    Original     		Mediu33-4-9337-2727 VMN-SG2127-1210 si7121 Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836 PDF