260UM Search Results
260UM Price and Stock
igus Inc RJ260UM-02-25CLOSED LINEAR PLAIN BEARING, RJ260UM-02-25 |
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igus Inc RJ260UM-02-20CLOSED LINEAR PLAIN BEARING, RJ260UM-02-20 |
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igus Inc RJ260UM-02-16CLOSED LINEAR PLAIN BEARING, RJ260UM-02-16 |
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igus Inc RJ260UM-02-12CLOSED LINEAR PLAIN BEARING, RJ260UM-02-12 |
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260UM Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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Contextual Info: ED-011IRC GaAs/GaAs IrED Chips 940 nm Features : Typical Applications : • GaAs/GaAs wafer • Good spectral matched to si detector • Peripheral Device • Photocoupler • Photointerrupter Outline Dimensions : Unit: um 245 260 260 p-Electrode p-GaAs epi layer |
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ed-011irc105um245um280um+2 | |
88E6097
Abstract: 88E6020 88E1119 88E6071 Marvell 88E1512 88AP270M 88W8897 Marvell PHY 88E6352 88PG867 MV64460
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ch-116388e609788e602088e1119+7 | |
NT7651
Abstract: th 2047.5 transistor bf 422 COM16 NT7651H-BDT01 NT7651H-BDT02
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nt765116cx2nt7651rth 2047.5+4 | |
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Contextual Info: epitex Opto-Device & Custom LED LED CHIP CE590-200 PRELIMINARY SPECIFICATION OF LED CHIP CE590-200 [ YELLOW ] 1 Commodity Type and Physical Characteristics. 1. Material AlGaInP/GaAs 2. Electrode Top Side P anode) side Bottom Side N (cathode) side 3. Electrode Pattern |
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ce590-200510um320um260um+1 | |
IC JRC 4558
Abstract: 4558 DX 4558 DX jrc JRC 7201 ic njm 4558 4558 DX dip 8 4558 jrc 7201 JRC JRC 4558 JRC 4558 D
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njm2233njm2233bzip-16260um+12 | |
ED-211IR
Abstract: 110um 880nm
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ed-211ir110um245um255um+3 | |
4558 DX
Abstract: jeita To-220
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ot-23sc-88ao-220ot-89+6 | |
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Contextual Info: 2011 7 July No.360 世界最薄の 能動・受動部品内蔵基板を開発 電子 当社は世界最薄レベルの能動・受動部品内蔵基板を開 基本となる構成は5層FPCからなる総厚さ260 mの 発しました。 基板でWLP化した能動部品と受動部品 0603/1005 |
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F1-9229-ST
Abstract: F1-9229-CH dust cap LC F1-1080-FC F1-0061 FC 0137 F1-0061F Zirconia SPLIT ferrules dust cap F1830
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OCR Scan |
250ym450pm650yrn_20jjm+13 | |
4558 DX
Abstract: NJM2233 sip data sheet ic 4558 njm 4558 sip HX SOT23 jeita To-252
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o-252o-220fot-23sc-88a+8 | |
Marvell 88E1512
Abstract: 88E6352 88E6176 Marvell 88E1510 88E6172 88E6071 88E6020 88E6161 88E6097 88w8782
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marvell 88e151288e635288e6176marvell 88e1510+6 | |
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Contextual Info: epitex Opto-Device & Custom LED LED CHIP CE640-200 PRELIMINARY SPECIFICATION OF LED CHIP CE640-200 [ RED ] 1 Commodity Type and Physical Characteristics. 1. Material AlGaInP/GaAs 2. Electrode Top Side P anode) side Bottom Side N (cathode) side 3. Electrode Pettern |
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ce640-200510um320um260um+2 | |
Infineon SLB 9665
Abstract: 77CFX1360P 97CNFX1M00PE infineon m2M RSA 4096 78CFX3000P 14MCO480 76CF2561P emv certification 14MCO256
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infineon slb 966577cfx1360p97cnfx1m00peinfineon m2m+6 | |
ED-011IRAContextual Info: ED-011IRA AlGaAs/GaAs IrED Chips 940 nm Features : Typical Applications : • AlGaAs/GaAs wafer • Good spectral matched to Si detector • Remote Controller • Peripheral Device • Photocoupler • Photointerrupter Outline Dimensions : Unit: um 260 260 |
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ed-011ira105um245um280um+2 | |
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4558 DX jrc
Abstract: IC JRC 4558 4558 DX 4558 DX dip 8 JRC 7201 78lr05 4558 sx ic njm 4558 4558 JRC 78LR
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njm2233njm2233b400um675um+16 | |
88E6161
Abstract: 88E6097 88e6131 88SA8052 98DX4122 88E6122 88E6351 88E6031 88E6350R 88ap270m
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ch-116388e616188e609788e6131+7 | |
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Contextual Info: epitex Opto-Device & Custom LED LED CHIP CE640-200 PRELIMINARY SPECIFICATION OF LED CHIP CE640-200 [ RED ] 1 Commodity Type and Physical Characteristics. 1. Material AlGaInP/GaAs 2. Electrode Top Side P anode) side Bottom Side N (cathode) side 3. Electrode Pettern |
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ce640-200510um320um260um+1 | |