320UM Search Results

Contextual Info: Recommended land Pattern 0.07 1.792 Pin 4 Solder Resist Keep Out 350um dia Solder Contact 350um dia Pin 3 Solder Resist 0.05 1.252 320um 315um 530um Pin 1 Pin 1 marking 0.01 0.31 Top View Pin 2 320um 320um 320um 1252um 75 Trace Width 535um 1071um 0.03 0.68

cm6300

Abstract: CM630 sac105
Contextual Info: EMI Filters with ESD Protection for SIM Card Applications CM6300 Product Description The CM6300 is a 3x3, 8-bump EMI filter with ESD protection device for SIM card applications in 0.5mm pitch CSP form factor. It is fully compliant with IEC 61000-4-2. The CM6300 is RoHS II compliant.

FP5509

Abstract: autofocus lens control system in camera dc iris drive cont FP550 DC IRIS Driver I2C
Contextual Info: FP5509 fitipower integrated technology lnc. 120mA Current Sinking 10-Bit I2C DAC for VCM Driver Features Description The FP5509 is a single 10-bit DAC with 120mA output current sink capability. It operates from a single 2.7 V to 5.5 V supply. The DAC is controlled

Contextual Info: Portable Electronics AAP662 AAP662 ADVANCED DATA Electret Microphone ECM Pre-Amplifier w/Programmable Filter DESCRIPTION The AAP662 ECM Pre Amplifier is a low gain preamplifier aimed at offering a feature-rich alternative to a typical JFET preamp solution. The performance of

Contextual Info: epitex Opto-Device & Custom LED LED CHIP CE590-200 PRELIMINARY SPECIFICATION OF LED CHIP CE590-200 [ YELLOW ] 1 Commodity Type and Physical Characteristics. 1. Material AlGaInP/GaAs 2. Electrode Top Side P anode) side Bottom Side N (cathode) side 3. Electrode Pattern

ED-714IRP

Contextual Info: ED-714IRP AlGaAs/AlGaAs Highspeed IrED Chips 865 nm Features : Typical Applications : • AlGaAs/AlGaAs wafer • Very high power • High speed • High performance • Superior thermal stability • IrDA • Encoder • Data Communication Outline Dimensions : Unit: um

ed-914irp

Contextual Info: ED-914IRP AlGaAs/AlGaAs Highspeed IrED Chips 850 nm Features : Typical Applications : • AlGaAs/AlGaAs wafer • Very high power • High speed • High performance • Superior thermal stability • IrDA • Encoder • Data Communication Outline Dimensions : Unit: um

ALIVH

Abstract: JESD22-B111 national semiconductor pb-free marking AN-1412 B111 JESD22 gold embrittlement
Contextual Info: National Semiconductor Application Note 1412 June 9, 2009 Table of Contents Introduction . Package Construction .

Contextual Info: 2ES032XXXJL 2ES032XXXJL SERIES TRANSIENT VOLTAGE SUPPRESSORS DESCRIPTION ¾ 2ES032XXXJL series are transient voltage suppressors diode chips for plastic package that fabricated in silicon epitaxial planar technology; ¾ Excellent clamping capability; ¾ Fast response time ;

FP5509

Abstract: autofocus camera actuator
Contextual Info: FP5509 fitipower integrated technology lnc. 120mA Current Sinking 10-Bit I2C DAC for VCM Driver Description Features The FP5509 is a single 10-bit DAC with 120mA output current sink capability. It operates from a 2.7V to 5.5V. The DAC is controlled via a 2-wire

LSI LOGIC

Abstract: 700UM
Contextual Info: Chip Planning w/ Avant! Planet -PL Workbook G11 Copyright LSI Logic Corporation 1999, 2000 All Rights Reserved. Chip Planning w/ Avant! Planet -PL Software Training Workbook (G11) Produced by the Customer Education Group May 2000 Copyright LSI Logic Corporation 1999, 2000. All rights reserved.

Contextual Info: ED-714IR AlGaAs/AlGaAs Highspeed IrED Chips 870 nm Features : Typical Applications : • AlGaAs/AlGaAs wafer • Very high power • Highspeed • High performance • Superior thermal stability • IrDA • Encoder • Data Communication Outline Dimensions : Unit: um

Contextual Info: PRODUCT GUIDE B. New LCD Driver 1C Code Information S6XXXXXXXX - X X X X 1 (2) (3) (4) (5) (6) (7) (8) (9) (10) (11) (12) (13) (14) (15) (1) System LSI (s) (2) Large Classification: LCD Driver IC (6) (3) Small Classification: A; B; C; D STN (Character Type)

SMD 5pin

Abstract: low voltage Microphone Preamplifier AAP661A AAP661X marking aai 5PIN AAP661BS-M5A-G-LF-TR
Contextual Info: Portable Electronics AAP661X AAP661X PRELIMINARY DATA Electret Microphone ECM Pre-Amplifier w/Programmable Filter DESCRIPTION The AAP661X ECM Pre Amplifiers were designed for the recent exclusive use of Plantronics, Inc. of Santa Cruz, CA for high end audio headset

ED-714IRV

Contextual Info: ED-714IRV AlGaAs/AlGaAs Highspeed IrED Chip 880 nm Features : Typical Applications : • AlGaAs/AlGaAs wafer • Very high power • High speed • High performance • Superior thermal stability • IrDA • Encoder • Data Communication Outline Dimensions : Unit: um

ALIVH

Abstract: pcb thermal Design guide trace theta layout AN-1412 7x8 64 footprint micro solder ball
Contextual Info: National Semiconductor Application Note 1412 May 2006 Table of Contents Introduction . Package Construction .

Contextual Info: epitex Opto-Device & Custom LED LED CHIP CE640-200 PRELIMINARY SPECIFICATION OF LED CHIP CE640-200 [ RED ] 1 Commodity Type and Physical Characteristics. 1. Material AlGaInP/GaAs 2. Electrode Top Side P anode) side Bottom Side N (cathode) side 3. Electrode Pettern

ED-014IRC

Abstract: GaAs wafer
Contextual Info: ED-014IRC GaAs/GaAs IrED Chips 940 nm Features : Typical Applications : • GaAs/GaAs wafer • Good spectral matched to si detector • Peripherals • Photocoupler • Photointerrupter Outline Dimensions : Unit: um 335 320 p-Electrode p-GaAs epi layer

ED-814IR

Contextual Info: ED-814IR AlGaAs/AlGaAs Highspeed IrED Chips 850 nm Features : Typical Applications : • AlGaAs/AlGaAs wafer • N side up • High power • High speed • High performance • Superior thermal stability • IrDA • Encoder • Data Communication Outline Dimensions : Unit: um

Contextual Info: ED-914IR AlGaAs/AlGaAs Highspeed IrED Chips 850 nm Features : Typical Applications : • AlGaAs/AlGaAs wafer • Very high power • High speed • High performance • Superior thermal stability • IrDA • Encoder • Data Communication Outline Dimensions : Unit: um

JESD22-B111

Abstract: ALIVH national semiconductor pb-free marking AN-1412 B111 JESD22 JESD22B111 400um ALIVH PCB
Contextual Info: National Semiconductor Application Note 1412 June 2007 Table of Contents Introduction . Package Construction .

53A18

Abstract: 30460
Contextual Info: K3N4C V,U 1000E-C/W MASK ROM DIE 8M-Bit(1Mx8/ 512Kx16) CMOS Mask ROM FEATURES •Single 5.0V/3.3V/3.0V power supply •Fast Access Time : 100ns (min) for 5.0V/ 3.3V 120ns (min) for 3.0V •x16 or x8 configurable with BHE-pin GENERAL PHYSICAL SPECIFICATIONS

LA 7376

Abstract: 729E HFA3046 16 PIN ic 810 PNP monolithic Transistor Arrays complementary npn-pnp power transistors hfa3128 TRANSISTOR 7812 1320j ba 9319
Contextual Info: HFA3046, HFA3096, HFA3127, HFA3128 S em iconductor October 1998 Data Sheet File Number 3076.10 Ultra High Frequency Transistor Arrays Features The HFA3046, HFA3096, HFA3127 and the HFA3128 are Ultra High Frequency Transistor Arrays that are fabricated from Harris Semiconductor’s complementary bipolar UHF-1

BUL4147D

Abstract: Electronic ballast NPN transistor Electronic ballast
Contextual Info: Shenzhen SI Semiconductors Co., LTD. Product Specification NPN 功率晶体管芯片/NPN Power Transistor Wafer 功率晶体管芯片 BUL4147D ●产品特点：击穿电压稳定开关速度快 ● High Voltage, High Switching Speed. ●E-C 极间内置二极管