26 TRANSISTOR Search Results

JENNINGS RF1J

Abstract: RB7a RJ2B SFD-373 AVQ-10 L4698B JENNINGS RF1D JENNINGS Rb1h RD6B
Contextual Info: I 77340=10 14E D RICHARDSON ELECTRONICS GOOOSfll fc, Vacuum Transfer Relays iype Ooil voltage VDC typ Coll voltage (VDC RBID RB1H RB1J RB2A RB7A RB7B RD6B RF1D RF1E RF1J 26 26 26 26 26 26 26 26 26 26 RF4A RF5C RF5D RF6C RF6D RJ1H RJ2B RJ4B RJ8A 26 12 12

N10L26

Abstract: IPP47N10SL-26 smd diode code marking 33A IPB47N10SL-26 IPI47N10SL-26 PG-TO263-3-2 n10l
Contextual Info: IPI47N10SL-26 IPP47N10SL-26, IPB47N10SL-26 SIPMOS =Power-Transistor Product Summary Feature  N-Channel  Enhancement mode  Logic Level 175°C operating temperature  Avalanche rated  dv/dt rated 100 VDS P-TO262-3-1 V RDS on 26 m
ID 47 A P-TO263-3-2

T119 A

Abstract: sot 122 SOT123 Package BLW78
Contextual Info: 63 RF/Microwave Devices Bipolar RF Transmitting Transistors SHF 900 - 960 MHz cont. Load Power (W) @ 900 MHz Power Gain (dB) @ 900 MHz Supply Voltage (V) 35* 50 50* 150(PEP)* 7* 8.5 8.1* 7.5* 24 26 26 26 Package Outline Load Power (W) @ 108 MHz Power Gain

MARKING CODE 13t sot363

Abstract: sot363 13t SOT363 13T MARKING 13t marking code BC847BPN 13t transistor free bc847bpn transistor sot363+13t
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET andbook, halfpage MBD128 BC847BPN NPN/PNP general purpose transistor Product specification Supersedes data of 1999 Apr 26 2001 Oct 26 Philips Semiconductors Product specification NPN/PNP general purpose transistor FEATURES

6MBP75TEA060

Abstract: AC200V AC2500 HCPL4504 TLP521 ipm application fuji igbt fuji
Contextual Info: SPECIFICATION Device Name : IGBT - IPM Type Name : 6MBP75TEA060 Spec. No. : MS6M 0701 Fuji Electric Co.,Ltd. Matsumoto Factory Nov . 26 ‘02 K.Sekigawa Nov . 26 ‘02 Nishiura Nov .-26 -‘02 K.Yamada T.Fujihira MS6M 0701 a 1 22 H04-004-07 Revised Records

2n5401ub

Contextual Info: The documentation and process conversion measures necessary to comply with this document shall be completed by 26 February 2013. INCH-POUND MIL-PRF-19500/766 26 November 2012 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, SILICON, LOW-POWER,

Transistor NEC 12d

Abstract: IN4007GP IN4007g saMSUNG ELECTROLYTIC capacitor SD series IN4007 d1 in4007gp
Contextual Info: Ver. 3.0 KA7525/B/26 POWER FACTOR CORRECTION The KA7525/B/26 provides simple, yet high perfor­ mance active power factor correction. KA7525/B/26 is optimized for electronic ballast and low power, high den­ sity power supplies requiring a minimum board area,

TRANSISTOR A331

Abstract: 395C-01
Contextual Info: MOTOROLA MRF6404 NPN Silicon RF Power Transistor LIFETIME BUY The MRF6404 is designed for 26 volts microwave large signal, common emitter, class AB linear amplifier applications operating in the range 1.8 to 2.0 GHz. • Specified 26 Volts, 1.88 GHz Characteristics

all diodes ratings

Contextual Info: CONTENTS SMALL-SIGNAL DEVICES Introduction .2 BIPOLAR TRANSISTORS Introduction .26 Datasheets .27

Contextual Info: SUT461N Epitaxial planar NPN silicon transistor Descriptions • Complex type bipolar transistor Features • Reduce quantity of parts and mounting cost • High collector power dissipation : PC=300mW Max. • Two 2SC5343 chips in SOT-26 Package Package : SOT-26

2SC5343

Abstract: SUT461N 2SC5343 equivalent
Contextual Info: SUT461N Epitaxial planar NPN silicon transistor Descriptions • Complex type bipolar transistor Features • Reduce quantity of parts and mounting cost • High collector power dissipation : PC=300mW Max. • Two 2SC5343 chips in SOT-26 Package Package : SOT-26

SUT466N

Abstract: KSD-T5P007-000
Contextual Info: SUT466N Semiconductor Epitaxial planar PNP silicon transistor Descriptions • Complex type bipolar transistor Features • Reduce quantity of parts and mounting cost • High collector power dissipation : PC=500mW Max. • 2 PNP Chips in SOT-26 PKG Package : SOT-26

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line MRF6414 NPN Silicon RF Power Transistor The MRF6414 is designed for 26 volt UHF large signal, common emitter, class AB linear amplifier applications. • Specified 26 Volt, 960 MHz Characteristics Output Power = 50 Watts

LM1578

Abstract: LM1578A AC Transformer 750ma 0965 TRANSISTOR
Contextual Info: MILITARY DATA SHEET Original Creation Date: 04/26/95 Last Update Date: 04/26/95 Last Major Revision Date: 04/26/95 MNLM1578A-X REV 0A0 SWITCHING REGULATOR General Description The LM1578A is a switching regulator which can easily be set up for such DC-to-DC voltage

Contextual Info: SUT466N Epitaxial planar PNP silicon transistor Descriptions • Complex type bipolar transistor Features • Reduce quantity of parts and mounting cost • High collector power dissipation : PC=500mW Max. • 2 PNP Chips in SOT-26 PKG Package : SOT-26 Ordering Information

Contextual Info: SUT041N Dual NPN Bipolar transistor Descriptions • General purpose amplifier • Recommended for LED Drive Application Features • Reduce quantity of parts and mounting cost • Low saturation: VCE sat = 0.5V Max • 2 NPN chips in SOT-26 Package Package : SOT-26

15 w RF POWER TRANSISTOR NPN

Abstract: transistor rf m 1104
Contextual Info: MOTOROLA Order this document by MRF6414/D SEMICONDUCTOR TECHNICAL DATA The RF Line MRF6414 NPN Silicon RF Power Transistor The MRF6414 is designed for 26 volt UHF large signal, common emitter, class AB linear amplifier applications. • Specified 26 Volt, 960 MHz Characteristics

SUT041N

Contextual Info: SUT041N Dual NPN Bipolar transistor Descriptions • General purpose amplifier • Recommended for LED Drive Application Features • Reduce quantity of parts and mounting cost • Low saturation: VCE sat = 0.5V Max • 2 NPN chips in SOT-26 Package Package : SOT-26

POWER SUPPLY BOARD 20 94V0

Abstract: DDA124EK DDA114EK DDA114TK DDA114YK DDA123JK DDA143TK DDA144EK
Contextual Info: SPICE MODEL: DDA124EK DDA144EK DDA114YK DDA123JK DDA143TK DDA114TK DDA xxxx K PNP PRE-BIASED SMALL SIGNAL SOT-26 DUAL SURFACE MOUNT TRANSISTOR • • • • A Epitaxial Planar Die Construction SOT-26 Complementary NPN Types Available (DDC) Built-In Biasing Resistors

150 j47

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line MRF6414 NPN Silicon RF Pow er Transistor The MRF6414 is designed for 26 volt UHF large signal, common emitter, class AB linear amplifier applications. • Specified 26 Volt, 960 MHz Characteristics Output Power = 50 Watts

DDA124EK

Abstract: DDA114EK DDA114TK DDA114YK DDA123JK DDA143TK DDA144EK transistor marking p06
Contextual Info: SPICE MODEL: DDA124EK DDA144EK DDA114YK DDA123JK DDA143TK DDA114TK DDA xxxx K PNP PRE-BIASED SMALL SIGNAL SOT-26 DUAL SURFACE MOUNT TRANSISTOR • · · · A Epitaxial Planar Die Construction SOT-26 Complementary NPN Types Available (DDC) Built-In Biasing Resistors

Contextual Info: SUT466N Epitaxial planar PNP silicon transistor Descriptions • Complex type bipolar transistor Features • Reduce quantity of parts and mounting cost • High collector power dissipation : PC=500mW Max. • 2 PNP Chips in SOT-26 PKG Package : SOT-26 Ordering Information

CMPTA94

Abstract: CP710 CXTA94 CZTA94 MPSA94
Contextual Info: PROCESS CP710 Small Signal Transistors PNP - High VoltageTransistor Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 26 x 26 MILS Die Thickness 9.0 MILS Base Bonding Pad Area 6.1 x 4.9 MILS Emitter Bonding Pad Area 5.2 x 5.2 MILS Top Side Metalization

Contextual Info: SUT465N Dual NPN+PNP complementary Bipolar transistor Descriptions • Complex type bipolar transistor Features • Reduce quantity of parts and mounting cost • High collector power dissipation : PC=300mW Max. • 2 NPN+PNP Chips in SOT-26 PKG Package : SOT-26