CP710
Abstract: CMPTA94 CXTA94 CZTA94 MPSA94
Contextual Info: PROCESS CP710 Small Signal Transistor PNP - High Voltage Transistor Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 26 x 26 MILS Die Thickness 9.0 MILS Base Bonding Pad Area 6.1 x 4.9 MILS Emitter Bonding Pad Area 5.2 x 5.2 MILS Top Side Metalization
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CMPTA94
Abstract: CP710 CXTA94 CZTA94 MPSA94
Contextual Info: PROCESS CP710 Small Signal Transistors PNP - High VoltageTransistor Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 26 x 26 MILS Die Thickness 9.0 MILS Base Bonding Pad Area 6.1 x 4.9 MILS Emitter Bonding Pad Area 5.2 x 5.2 MILS Top Side Metalization
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CMPTA94
Abstract: CP710 CXTA94 CZTA94 MPSA94
Contextual Info: PROCESS CP710 Central Small Signal Transistor TM Semiconductor Corp. PNP - High Voltage Transistor Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 26 x 26 MILS Die Thickness 9.0 MILS Base Bonding Pad Area 6.1 x 4.9 MILS Emitter Bonding Pad Area 5.2 x 5.2 MILS
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CXTA94
Abstract: chip die transistor
Contextual Info: PROCESS CP710 Small Signal Transistor PNP - High Voltage Transistor Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 26 x 26 MILS Die Thickness 9.0 MILS Base Bonding Pad Area 6.1 x 4.9 MILS Emitter Bonding Pad Area 5.2 x 5.2 MILS Top Side Metalization
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cp710cmpta94cxta94czta94+3mpsa9423-augustchip die transistor
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BF244 datasheet
Abstract: 2N5133 equivalent MPS5771 BD345 BD347 BF244 2n5248 bf256 2N3304 2n5910
Contextual Info: Index Industry Part Number Central Process No. Page # Industry Part Number 1N456 .CPD64 . 216 1N456A.CPD64 . 216 1N457 .CPD64 . 216
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1n456cpd641n456a1n457+121n457a1n458bf244 datasheet2n5133 equivalentmps5771bd345bd347bf2442n5248bf2562n33042n5910
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MPSA94
Abstract: CMPTA94 CP710 CXTA94 CZTA94
Contextual Info: PROCESS CP710 Small Signal Transistor PNP - High Voltage Transistor Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 26 x 26 MILS Die Thickness 9.0 MILS Base Bonding Pad Area 6.1 x 4.9 MILS Emitter Bonding Pad Area 5.2 x 5.2 MILS Top Side Metalization
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