CMPTA94 Search Results

Contextual Info: CMPTA94 SURFACE MOUNT HIGH VOLTAGE PNP SILICON TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPTA94 type is a surface mount epoxy molded PNP silicon planar epitaxial transistor designed for extremely high voltage applications.

TRANSISTOR D 819

Abstract: transistor c94
Contextual Info: Central“ CMPTA94 Semiconductor Corp. SURFACE MOUNT PNP HIGH VOLTAGE SILICON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPTA94 type is a surface mount epoxy molded PNP sili­ con planar epitaxial transistors designed for extremely high voltage applications.

CMPTA94

Contextual Info: CMPTA94 SURFACE MOUNT PNP SILICON HIGH VOLTAGE TRANSISTOR Central TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPTA94 type is a surface mount epoxy molded PNP silicon planar epitaxial transistors designed for extremely high voltage applications.

transistor c94

Abstract: CMPTA94
Contextual Info: CMPTA94 SURFACE MOUNT HIGH VOLTAGE PNP SILICON TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPTA94 type is a surface mount epoxy molded PNP silicon planar epitaxial transistor designed for extremely high voltage applications.

Contextual Info: Central" CMPTA94 Semiconductor Corp. SURFACE MOUNT PNP HIGH VOLTAGE SILICON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPTA94 type is a surface mount epoxy molded PNP sili­ con planar epitaxial transistors designed for extremely high voltage applications.

transistor c94

Abstract: VCE-350V CMPTA94
Contextual Info: CEN1081 SURFACE MOUNT PNP HIGH VOLTAGE SILICON TRANSISTOR Central TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR CEN1081 is a selected version of the CMPTA94 surface mount epoxy molded PNP silicon planar epitaxial transistor, designed for extremely high voltage

CMPTA94

Contextual Info: CMPTA94 SURFACE MOUNT PNP HIGH VOLTAGE SILICON TRANSISTOR Central TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPTA94 type is a surface mount epoxy molded PNP silicon planar epitaxial transistors designed for extremely high voltage applications.

CMPZ4124

Abstract: CMZ5930B CMZ5945B CMZ5947B Transistor 1602c BC327/transistor bc547 bk 045 CMPZ4618 CMPZ4614 CMZ5948B CMZ5936B
Contextual Info: Small Signal Transistors U.S Specifications Preferred Series SOT-23 Case, 350mW (Continued on next page) b v Ce o b v ebo •SVcES 'CBO VCB *'CEV ® VCE (V) (V) (V) (V) (nA) j MIN M.N MIN MAX 1 hFE @ IC ® VCE (mA) MIN 1 General Purpose Amplifiers/Switches

BAT 13003 D

Abstract: SMBJ5.OCA bat 13003 em 434 CMHD3595 CMR1U-02M CMSD4448 CMPS5064 CMPSH-3SE CMSH3-40
Contextual Info: index/Cross Reference Industry Part Number Central Part Number CMXD4448 1MN10 10BQ015 CMSH1-20ML CMR1U-02M 10MF2 10MQ040 CMSH1-40M 10MQ060 CMSH1-60M 1N6478 CMR1-02M 1N6479 CMR1-02M 1N6481 CMR1-04M 1N6482 CMR1-06M 1N6483 CMR1-10M CMR1-10M 1N6484 1S2835 CMPD2836

BC548 BH

Abstract: BC547 NPN Transistor BC547B npn bc338 signal transistor transistor MPSA77 BC546B SOT23 transistor low noise pnp
Contextual Info: Small Signal Transistors U.S Specifications Preferred Series SOT-23 Case, 350mW (Continued on next page) TYPE NO. BVCBO BVCEO BVEBO *BVCES ICBO @ *I CEV @ VCB (V) (V) (V) (V) (nA) MIN MIN MIN MAX hFE @ VCE @ IC (V) (mA) VCE (SAT) @ IC toff Cob fT (pF) (MHz)

CP710

Abstract: CMPTA94 CXTA94 CZTA94 MPSA94
Contextual Info: PROCESS CP710 Small Signal Transistor PNP - High Voltage Transistor Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 26 x 26 MILS Die Thickness 9.0 MILS Base Bonding Pad Area 6.1 x 4.9 MILS Emitter Bonding Pad Area 5.2 x 5.2 MILS Top Side Metalization

CMLTA94

Abstract: CMPTA92E CMPTA94 CXTA92 CZTA92 CZTA94
Contextual Info: PROCESS CP710V Small Signal Transistor PNP - High Voltage Transistor Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 26 x 26 MILS Die Thickness 7.1 MILS Base Bonding Pad Area 6.1 x 4.9 MILS Emitter Bonding Pad Area 5.2 x 5.2 MILS Top Side Metalization

CMPTA94

Abstract: CP710 CXTA94 CZTA94 MPSA94
Contextual Info: PROCESS CP710 Small Signal Transistors PNP - High VoltageTransistor Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 26 x 26 MILS Die Thickness 9.0 MILS Base Bonding Pad Area 6.1 x 4.9 MILS Emitter Bonding Pad Area 5.2 x 5.2 MILS Top Side Metalization

CMPTA94

Abstract: CP710 CXTA94 CZTA94 MPSA94
Contextual Info: PROCESS CP710 Central Small Signal Transistor TM Semiconductor Corp. PNP - High Voltage Transistor Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 26 x 26 MILS Die Thickness 9.0 MILS Base Bonding Pad Area 6.1 x 4.9 MILS Emitter Bonding Pad Area 5.2 x 5.2 MILS

transistor T 523

Abstract: TRANSISTOR 3000W 400V SMD transistor 26 sot 23 npn 400V switching transistor sot-23 high gain PNP POWER TRANSISTOR "SOT23" Lighting Controllers SMD TRANSISTOR HP TRANSISTOR SMD HP 89 smc diodes motorola Transistors SOT89 smd
Contextual Info: SMD DATA BOOK 2001-2002 Ultra Low Leakage Diodes in SOT-23. Central is introducing a family of Energy Efficient Devices, EED's, for the segment of the electronics market that demands both small size and very low leakage currents, typically 100pA. Applications include laptops, cell

TRANSISTOR NPN BA RV SOT - 89

Abstract: bc816 transistor ZT 2222a BO338 CMPSH-3SE 2222A transistors NPN 800V 900 watt 3a TR 3906 PNP SM BG SOT26 CMPZ4124
Contextual Info: Selection Guide Page Small Signal Transistors 44 Small Signal DMOS FETs 55 Junction FETs 56 Digital Transistor 56 Power Transistors 57 Switching Diodes 60 Schottky Diodes 63 Low Leakage Diodes 66 Ultra Low Leakage Diodes 66 Stabistor Diodes 67 Zener Diodes

a42e

Abstract: IC 7410 sot-89 A63 CZT900K npn 2907A 2222a A77 SOT23 2222ae A92E 3906 npn
Contextual Info: Small Signal Transistors Surface Mount Packages Actual Size SOD-923 SOT-923 SOT-953 SOD-523 SOT-523 SOT-563 SOD-323 SOT-323 SOT-363 SOD-123 SOD-123F SOT-23 SOT-23F SOT-143 SOT-26 SOT-28 SOT-89 SOT-223 SOT-228 SMA SMB SMC SOIC-16 HD DIP TLP Tiny Leadless

kb3310qf c1

Abstract: KB3310QF mmc ga201 KB3310 kb3310qf b0 quanta at2 KB3310QF-B0 AOZ1021 quanta at1 quanta
Contextual Info: 5 D 4 VTERM +0.9V VTT(+1.05V) +1.5VSUS +1.5V +1.8VMEM +1.8V +2.5V 3VPCU +3.3V +3.3VSUS LCD_3.3V LCD_5V +5V 3 2 IL1 Block Diagram B -> C 2008-01-08 VID[0:6] C7-M (ULV) VCORE:+1.196 ~ +0.748 VCCP:+1.05V VCCA:+1.8V or +1.5V +/- CPU_CLK +/- HCLK CRT 256M/512M/1GB

part MARKING k48

Abstract: marking bc p28 CMSD4448 W4W MARKING CM0Z15L CMZ5936B CM0Z11V CMZ5945B marking 6ca marking code ca2
Contextual Info: Marking Codes Continued Marking Code Part Number Marking Code 04 04D 04A 04C 04S 040 1A 1A8 1AC 1B 1B8 1C8 1D8 1E 1E8 1F 1F8 1FF 1G 1G8 1H8 1J 1J8 1K 1K8 1L 1L8 1M8 1P 1PC 1QC 1F)C 2AC 2B 2C 2CA 2F 2FC 2G 2PC 2QC 2P 3A 3B 3E 3F 3G 3J 3K 3L 3P 4A 4B 4C 4E

BF244 datasheet

Abstract: 2N5133 equivalent MPS5771 BD345 BD347 BF244 2n5248 bf256 2N3304 2n5910
Contextual Info: Index Industry Part Number Central Process No. Page # Industry Part Number 1N456 .CPD64 . 216 1N456A.CPD64 . 216 1N457 .CPD64 . 216

MPSA94

Abstract: CMPTA94 CP710 CXTA94 CZTA94
Contextual Info: PROCESS CP710 Small Signal Transistor PNP - High Voltage Transistor Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 26 x 26 MILS Die Thickness 9.0 MILS Base Bonding Pad Area 6.1 x 4.9 MILS Emitter Bonding Pad Area 5.2 x 5.2 MILS Top Side Metalization

CMR1U-02M

Abstract: CMSD4448 CMSH3-40 CMPZ4124 CMSH3-100 CXTA27 TR em 328 SO3903 BST60 CMPZ4614
Contextual Info: index/Cross Reference Industry Part Number Central Part Number 1MN10 CMXD4448 10BQ015 CMSH1-20ML 10MF2 CMR1U-02M 10MQ040 CMSH1-40M 10MQ060 CMSH1-60M 1N6478 CMR1-02M 1N6479 CMR1-02M 1N6481 CMR1-04M 1N6482 CMR1-06M 1N6483 CMR1-10M 1N6484 CMR1-10M 1S2835 CMPD2836