26 SEMICONDUCTOR SMD Search Results

nokia 1100 lcd

Abstract: nokia 1200 lcd nokia lcd 1100 toshiba LCD LED NIGHT LAMP CIRCUIT nokia 1100 circuit photo transistor smd toshiba Nokia lcd nokia 1100
Contextual Info: Photosensor Dec, 2003 TOSHIBA Semiconductor Company Discrete Semiconductor Division 2003 Dec DP0640004_01 1/26 Illuminance Sensor 2003 Dec DP0640004_01 2/26 Applications of Illuminance Sensor Cellular Phone PDA Illuminance Sensor Current market future market

smd SOT26

Abstract: SMD MARKING CODE D4 sot-26 SMD CODE D4 sot marking D3 SOT26 marking code D3 sot-26 SMD CODE D4 Zener diode quad surface mount TVS/zener CS05
Contextual Info: Central CSMS05 CSMS12 CSMS15 CSMS24 Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR CSMS05 Series is a 4 Line TVS/Zener Array packaged in the SOT-26 surface mount case. These devices are designed to protect sensitive equipment against ESD and prevent latch-up events in

Contextual Info: DS90UR905 Serializer and DS90UR906 Deserializer Evaluation Kit User’s Manual NSID: SERDESUR-65USB Rev 0.4 National Semiconductor Corporation Date: 3/26/2010 Page 1 of 44 Table of Contents TABLE OF CONTENTS . 2

siemens Package Outlines

Abstract: l20x
Contextual Info: Summary of Types in Alphanumerical Order Semiconductor Group - Addresses Information on Literature Package Outlines SIEMENS P-SOJ-28-2 SMD Plastic Package (small outline J-lead) P-SOJ-40-1 (SMD) Plastic Package (small outline J-lead) P-SOJ-26/24-1 (300 mil) (SMD)

6R450E6

Abstract: E6 DIODE diode smd E6 IPx60R450E6 JESD22 6R45 to252 footprint wave soldering TRANSISTOR SMD MARKING CODE 42 IPA60R450E6
Contextual Info: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS E6 600V CoolMOS E6 Power Transistor IPx60R450E6 Data Sheet Rev. 2.0, 2010-07-26 Final Industrial & Multimarket 600V CoolMOS™ E6 Power Transistor 1 IPD60R450E6, IPP60R450E6 IPA60R450E6 Description

65c6280

Abstract: IPA65R280C6 IPx65R280C6 MOSFET TRANSISTOR SMD MARKING CODE A1 to247 pcb footprint transistor 313 smd SMD MARKING CODE M3 IPP65R280C6 Diode SMD SJ 66A ipa65
Contextual Info: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 650V CoolMOS C6 Power Transistor IPx65R280C6 Data Sheet Rev. 2.0, 2010-07-26 Final Industrial & Multimarket 650V CoolMOS™ C6 Power Transistor 1 IPA65R280C6, IPB65R280C6 IPI65R280C6, IPP65R280C6

outsourcing IBM

Abstract: avnet celestica flextronics national semiconductor CC
Contextual Info: Considerations in Converting from SMT to Die Assemblies National Semiconductor Technical Seminar Series Die Product Business Unit June 26 2003 1 Approaches, Options & Solutions • Die conversion trends and drivers • Die interconnect approaches • Device and information resources

CMXZ13VTO

Abstract: CMXZ20VTO SOT-26 zener diode data manual CMXZ10VTO CMXZ11VTO CMXZ12VTO CMXZ30VTO CMXZ16VTO CMXZ18VTO
Contextual Info: PRODUCT announcement Triple Isolated Zener Diodes in a SOT-26 CMXZ2V4TO Series 2.4V to 47V Sample Devices available upon request. features • Three Zener Diodes in alternating configuration in a space saving package. description The CENTRAL SEMICONDUCTOR CMXZ2V4TO Series

fdk vco

Abstract: samsung inductor date code marking code samsung SMD CL05A475MQ5NRNC CL05A AN1961 marking date code samsung semiconductor date code marking capacitor samsung fdk vco mobile vco fdk
Contextual Info: National Semiconductor Application Note 1961 Sheng Jin March 26, 2010 Introduction offers superior efficiency and very low Iq under light load conditions. During the PWM mode, the device operates at a fixed frequency of 6MHz typ. . The LM8801 is available in a 6–bump thin micro SMD package. Only three external surface-mount components, a

TP5051

Abstract: airtronic capacitor 7805 smd motorola 7805 pl 7805 SMD 7805 voltage regulator 7805 REGULATOR motorola IC 7805 smd transistor 1205 motorola rf Power Transistor
Contextual Info: MOTOROLA Order this document by TP5051/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor TP5051 • Specified 470 MHz Characteristics Output Power — 50 Watts @ 24 Volts, 60 Watts @ 26 Volts Gain — 9 dB min Efficiency — 60% min

sdc 7500 pwm control

Abstract: g15 SMD mpc5606 MPC5606s SMD code ssd Bosch PSI IC DSI LCD spec 3" wqvga 37 pin LCD pinout sdc 7500 pwm smd transistor pk3
Contextual Info: Freescale Semiconductor Data Sheet: Advance Information Document Number: MPC5606S Rev. 6, 26 Jan 2011 MPC5606S MPC5606S Microcontroller Data Sheet LQFP144 20 x 20 mm • High performance 64 MHz e200z0h CPU – 32-bit Power Architecture technology CPU – Up to 60 DMIPs operation

2N5416UA

Abstract: 2N54115 2N5416U4 2N5415UA 2N5416 2N5415 MARKING SMD pnp TRANSISTOR ec 2N5416S 2N5415S 2N5415 JANTXV
Contextual Info: INCH-POUND The documentation and process conversion measures necessary to comply with this document shall be completed by 1 September 2010. MIL-PRF-19500/485M 1 June 2010 SUPERSEDING MIL-PRF-19500/485L 26 January 2009 PERFORMANCE SPECIFICATION SHEET * SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, SILICON, LOW-POWER

65E6280

Abstract: to247 pcb footprint IPW65R280E6 Diode SMD SJ 66A ipp65r280e6 ipw65r ipa65r
Contextual Info: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS E6 650V CoolMOS E6 Power Transistor IPx65R280E6 Data Sheet Rev. 2.0, 2010-04-26 Final In d u s tr ia l & M u l ti m a r k e t 650V CoolMOS™ E6 Power Transistor 1 IPA65R280E6, IPB65R280E6

6R125

Abstract: 6R125C6
Contextual Info: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 600V CoolMOS C6 Power Transistor IPx60R125C6 Data Sheet Rev. 0.9, 2009-08-26 Preliminary In d u s tr ia l & M u l ti m a r k e t 600V CoolMOS™ C6 Power Transistor 1 IPA60R125C6, IPB60R125C6

bond wire gold

Contextual Info: Package Details - SOT-26 Mechanical Drawing Lead Code: Reference individual device datasheet. Part Marking: 3 Character Alpha/Numeric Code Mounting Pad Geometry Dimensions in mm Central TM Semiconductor Corp. w w w. c e n t r a l s e m i . c o m R2 (5-November 2007)

CI 321

Abstract: 100 20L A1 diode SMD a7 Transistor smd diode a6 smd transistor A8 4216 d-1 smd transistor marking A3 MT5C6408 smd marking 8K SMD marking A6
Contextual Info: SRAM MT5C6408 Austin Semiconductor, Inc. 8K x 8 SRAM PIN ASSIGNMENT Top View SRAM MEMORY ARRAY AVAILABLE AS MILITARY SPECIFICATIONS 28-Pin DIP (C) (300 MIL) 4 3 2 1 28 27 26 • High Speed: 12, 15, 20, 25, 35, 45, 55, and 70ns • Battery Backup: 2V data retention

Contextual Info: SRAM MT5C6408 Austin Semiconductor, Inc. 8K x 8 SRAM PIN ASSIGNMENT Top View SRAM MEMORY ARRAY AVAILABLE AS MILITARY SPECIFICATIONS 28-Pin DIP (C) (300 MIL) 4 3 2 1 28 27 26 • High Speed: 12, 15, 20, 25, 35, 45, 55, and 70ns • Battery Backup: 2V data retention

TR13

Abstract: 14x14x7
Contextual Info: Package Details - SOT-26 Mechanical Drawing Lead Code: Reference individual device datasheet. Part Marking: 3 Character Alpha/Numeric Code Mounting Pad Geometry Dimensions in mm Central TM Semiconductor Corp. w w w. c e n t r a l s e m i . c o m R1 (10-December 2002)

Zener diode smd marking code 5V

Abstract: smd SOT26 sot26 diode SMD MARKING CODE d4 diode marking D3 SOT26 Zener diode quad surface mount CS05 CS12 CS15 CS24
Contextual Info: CSMS05 CSMS15 CSMS12 CSMS24 w w w. c e n t r a l s e m i . c o m SURFACE MOUNT QUAD SILICON TVS/ZENER ARRAY 5 THRU 24 VOLTS DESCRIPTION: The CENTRAL SEMICONDUCTOR CSMS05 Series is a 4 Line TVS/Zener Array packaged in the SOT-26 surface mount case. These devices are designed to

Contextual Info: MITEL SL3522 500MHz 75dB Logarithmic/Limiting Amplifier SEMICONDUCTOR Advance Inform ation DS3534 - 2.0 N/C N/C cx V ee GND CX 28 27 cx V ee RF O/P GND 26 f 4 5 RF l/P - XD XD GND 251 24 X D Π6 23 XD GND Π7 22 XD cx 8 21 XD GND RF O /P - ex 9 20 XD

5962-9175204MXa

Abstract: 5962-9175204-MXA 5962-9175205MXA SMJ27C040-15JMSMD SMJ27C04012JM SMJ27C040-15JM SMJ27C040 SMJ27C040-12JM smd code a10
Contextual Info: UVEPROM SMJ27C040 Austin Semiconductor, Inc. FUNCTIONAL BLOCK DIAGRAM* EPROM 524,288 x 8 12 11 10 9 8 7 6 5 27 26 23 25 4 28 29 3 2 30 31 22 A0 A1 A2 A3 A4 A5 A6 A7 A8 A9 A10 A11 A12 A13 A14 A15 A16 A17 A18 E\ 24 G\ A 524,287 A A A A A A A A 13 14 15 17 18

PDM41257SA15D

Abstract: Paradigm 41256 PDM41024S20L32 PDM41024-S20L32 PDM41257LA15D MT5C1005C CY7C199-35DMB SRAM Cross Reference EDI84256LPS25TB 41256
Contextual Info: National Semiconductor Part Numbering System N S 41024 L 20 E -SMD Grade Package Code Speed Grade Power Level Device Type /883 MIL-STD-883 Level B AC/DC tested at –55, +25 and +125°C with High Temp Burn-in -SMD DESC Standard Military Drawing AC/DC tested at –55, +25 and +125°C with High Temp Burn-in

Contextual Info: ASi? MT5C1001 883C 1M X 1 SRAM AUSTIN SEMICONDUCTOR, INC. SRAM 1 MEG X 1 SRAM AVAILABLE AS MILITARY SPECIFICATIONS PIN ASSIGNMENT Top View • SMD 5962-92316 • M IL -S T D -8 8 3 28-Pin DIP 400 MIL FEATURES • • • • High speed: 15, 20, 25, 35 and 45ns

SMJ27C040

Abstract: SMJ27C040-12JM SMJ27C040-15JM
Contextual Info: UVEPROM SMJ27C040 Austin Semiconductor, Inc. 4 MEG UVEPROM PIN ASSIGNMENT Top View UV Erasable Programmable Read-Only Memory 32-Pin DIP (J) (600 MIL) AVAILABLE AS MILITARY SPECIFICATIONS V PP A16 A15 A12 A7 A6 A5 A4 A3 A2 A1 A0 DQ0 DQ1 DQ2 GND • SMD 5962-91752