25US Search Results

Quartz Crystal

Abstract: crystal quartz 6.144 MHz Crystal oscillators 48.000 Quartz resonator 12,288 Mhz 4.032 MHz crystal HC-25US HC-25-U
Contextual Info: Oscilent Corporation | 152 Page 1 of 4 Quartz Crystals Series Number Package Description Last Modified 152 HC-25US Weld Type Quartz July. 01 2005 . Quartz Crystal FEATURES - Industry standard package - Wide frequency range - Low profile - Excellent reliability/aging

csi24

Abstract: sinard
Contextual Info: B U R R -B R O W N E ADS7825 1 4 Channel, 16-Bit Sampling CMOS A/D Converter FEATURES DESCRIPTION • 25us max SAMPLING AND CONVERSION • SINGLE +5V SUPPLY OPERATION The ADS7825 can acquire and convert 16 bits to within ±2.0 LSB in 25[ls max while consuming only

DS7824

Contextual Info: ADS7824 B U R R - B R O W N E 1 4 Channel, 12-Bit Sampling CMOS A/D Converter DESCRIPTION FEATURES • 25us max SAMPLING AND CONVERSION • SINGLE +5V SUPPLY OPERATION • PIN-COMPATIBLE WITH 16-BIT ADS7825 • PARALLEL AND SERIAL DATA OUTPUT • 28-PIN 0.3" PLASTIC DIP AND SOIC

Contextual Info: SIPEX CORP bOE D C lr > A v % • 3283711 0003b75 4bfl « S P X HS574A ^ lk A * A * Corporations S IG N A L PRO CESSING EXCELLENCE COMPLETE 12-BIT, 25uSEC A/D CONVERTER WITH INTERFACE FEATURES ■ Complete 12-bit A/D converter with sample-hold, reference, clock, and three state

C448PB

Abstract: C448 C448PD C448P
Contextual Info: INVERTER THYRISTO R C448 40mm / 1400V / 700A/ 25us Type C448 reverse blocking thyristor is suitable for inverter applications. The silicon junction is manufactured by the all-diffused process and utilizes the field-proven, interdigitated amplifying gate structure. It is supplied in an industry accepted disc-type package, ready to mount using commercially

transistor G11

Abstract: to-126 HIGH SPEED SWITCHING transistor g11 transistor NPN Transistor 10A 400V NPN Transistor 1A 400V to - 92 to-126 npn switching transistor 400v d 772 transistor
Contextual Info: TS13003 High Voltage NPN Transistor TO-92 TO-126 PRODUCT SUMMARY Pin Definition: 1. Emitter 2. Collector 3. Base BVCEO 400V BVCBO 700V IC 1.5A VCE SAT Features 1V @ IC =0.5A, IB =0.1A Block Diagram ● High Voltage ● High Speed Switching Structure ● Silicon Triple Diffused Type

NPN Transistor 1A 800V to - 92

Abstract: transistor -25 F07
Contextual Info: TS13003MV High Voltage NPN Transistor TO-92 Pin Definition: 1. Emitter 2. Collector 3. Base PRODUCT SUMMARY BVCEO 400V BVCBO 800V IC 1.5A VCE SAT Features ● High Voltage ● High Speed Switching 0.8V @ IC / IB = 1A / 0.25A Block Diagram Structure ● Silicon Triple Diffused Type

TSC5304EDCP

Abstract: TSC5304EDCH marking E11 DIODE power transistor Ic 4A NPN to - 251
Contextual Info: TSC5304ED High Voltage NPN Transistor with Diode TO-251 IPAK TO-252 (DPAK) Pin Definition: 1. Base 2. Collector 3. Emitter PRODUCT SUMMARY BVCEO 400V BVCBO 700V IC VCE(SAT) Features ● 4A 0.25V (Typ.) @ IC=0.5A, IB=0.1A Block Diagram Build-in Free-wheeling Diode Makes Efficient Antisaturation Operation

LAN9220

Abstract: nrzi circuit diagram MLT-3 lan-922
Contextual Info: LAN9220 16-bit Non-PCI Small Form Factor 10/100 Ethernet Controller with Variable Voltage I/O & HP Auto-MDIX Support PRODUCT FEATURES Datasheet Highlights „ „ „ „ „ „ „ Efficient architecture with low CPU overhead Easily interfaces to most 16-bit embedded CPU’s

w1p84

Contextual Info: 8 Bit Microcontroller TLCS-870/C1 Series TMP89FM82 2009 TOSHIBA CORPORATION All Rights Reserved TMP89FM82 Considerations for using Motor Control Circuit PMD:Programmable Motor Driver Following considerations are necessary for writing data to electrical lead angle timer (ELDEG) and reading 2 bytes

BD307

Abstract: BU306 9v dc motor BU306F BU307F transistor 400v BD306 300V transistor npn 2a NPN Transistor 1A 400V transistor b 40 Ic-5A datasheet
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BU306F/307F DESCRIPTION •Collector-Emitter Sustaining Voltage: VCEO SUS = 300V(Min)- BD306F 400V(Min)- BD307F ·Collector Current-8A APPLICATIONS ·Designed for use in switching regulators, inverters, motor

MJE1320

Contextual Info: Inchange Semiconductor Product Specification MJE1320 Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-220 package ・High voltage ・Low collector saturation voltage APPLICATIONS ・For high-voltage ,power switching in inductive circuits and line operated

Contextual Info: Power Management ICs for Automotive Body Control LED Drivers for Automotive Light No.11039ECT14 BD8381EFV-M ●Description BD8381EFV-M is a white LED driver with the capability of withstanding high input voltage 50V MAX . A current-mode buck-boost DC/DC controller is also integrated to achieve stable operation against voltage input and also to

Contextual Info: LAN9217 16-bit High-Performance Single-Chip 10/100 Ethernet Controller with HP Auto-MDIX Support PRODUCT FEATURES Datasheet Highlights „ „ „ „ „ „ „ „ Target Applications „ „ „ „ „ „ „ „ Video distribution systems, multi-room PVR Cable, satellite, and IP set-top boxes

BUL6825

Contextual Info: Product Specification www.jmnic.com BUL6825 Silicon Power Transistors ・ DESCRIPTION ・High voltage ,high speed ・With TO-220C package APPLICATIONS ・Relay drivers ・Inverters ・Switching regulators ・Deflection circuits PINNING PIN DESCRIPTION 1 Base

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS411-00003-1v0-E ASSP ISO/IEC 18000-6 Type-C Compliant FRAM Embedded UHF Band RFID LSI TM MB97R803A/B, MB97R804A/B • OVERVIEW This specification defines the LSI specification for the passive RFID Tag LSI “MB97R803A/B, MB97R804A/

plx 9054

Abstract: plxtechnology tp 9054 333CJ PLX PCI9054 eeprom d4x MPC8S PC19054 pci 9054 RELAY lad1
Contextual Info: PCI 9054 PCI I/O Accelerator November 1998 Version 1.0 l20 Compatible, CompactPCI Hot Swap Friendly PCI Bus Master Interface Chip _ for Adapters and Embedded Systems FEA TU R E S • 3.3V, 5V tolerant PCI and Local signaling supports Universal PCI Adapter designs, 3.3V core, lowpower CMOS in 176-pin PQFP and 225-pin PBGA

MJE13003K

Abstract: Transistor 2N2222 NPN TO92 2N2222 NPN Transistor to 92 OF transistor 2N2222 to-92 npn transistors 700V 1A core ferroxcube Benchmark NPN Transistor 1.5A 700V
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MJE13003K NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTOR „ DESCRIPTION These devices are designed for high–voltage, high–speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V SWITCHMODE.

pswt

Abstract: MJE13003 TO-92 NPN Transistor 1.5A 700V
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MJE13003 NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTOR „ DESCRIPTION These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V applications in switch

mje13009 equivalent

Abstract: 2N2222 SOA mje13009l MJE13009L-T3P-T QW-R214-011 2n2222 transistor pin b c e 3V to 350V dc dc converter MJE13009-T3P-T 2N2222 transistor output curve free transistor and ic equivalent data
Contextual Info: UNISONIC TECHNOLOGIES CO.,LTD. MJE13009 NPN EPITAXIAL SILICON TRANSISTOR SWITCHMODE SERIES NPN SILICON POWER TRANSISTORS DESCRIPTION The MJE13009 is designed for high–voltage, high–speed power switching inductive circuits where fall time is critical. They

equivalent mje13005

Abstract: 2N2222 transistor output curve transistor mje13005 mje13005 equivalent
Contextual Info: UTC MJE13005 NPN EPITAXIAL SILICON TRANSISTOR NPN SILICON POWER TRANSISTORS DESCRIPTION These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE.

MJE13009

Abstract: 2N2222 transistor output curve mje13009l mje13009 CIRCUIT 2N2222 SOA MJE13009G tr 2n2222 MJE13009L-TF3-T
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MJE13009 NPN SILICON TRANSISTOR SWITCHMODE SERIES NPN SILICON POWER TRANSISTORS „ DESCRIPTION The MJE13009 is designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V switch mode applications such

*e13007

Abstract: bipolar transistor td tr ts tf equivalent of transistor mje13007
Contextual Info: UTC MJE13007 NPN EPITAXIAL SILICON TRANSISTOR NPN BIPOLAR POWER TRANSISTOR FOR SWITCHING POWER SUPPLY APPLICATIONS DESCRIPTION The UTC MJE13007 is designed for high–voltage, high–speed power switching inductive circuits where fall time is critical. It is particularly suited for 115 and 220 V

equivalent mje13005

Abstract: 1N4933 equivalent
Contextual Info: UTC MJE13005 NPN EPITAXIAL SILICON TRANSISTOR NPN SILICON POWER TRANSISTORS DESCRIPTION These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE.