BU306 Search Results

BD307

Abstract: BU306 9v dc motor BU306F BU307F transistor 400v BD306 300V transistor npn 2a NPN Transistor 1A 400V transistor b 40 Ic-5A datasheet
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BU306F/307F DESCRIPTION •Collector-Emitter Sustaining Voltage: VCEO SUS = 300V(Min)- BD306F 400V(Min)- BD307F ·Collector Current-8A APPLICATIONS ·Designed for use in switching regulators, inverters, motor

Contextual Info: DEVELOPMENT DATA This data sheet contains advance Information and specifications are subject to change without notice. • bbS3Ci3;L DDlaSb3r ^ ■ BU306F BU307F J N AflER P H I L I P S / ] I S CRETE 2SE D T -5 3 '^ 7 SILICON DIFFUSED POWER TRANSISTORS High-voltage, high-speed, glass-passivated npn power transistor in a SOT186 envelope with electrically

Contextual Info: BU306F Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)300 V(BR)CBO (V)600 I(C) Max. (A)8.0 Absolute Max. Power Diss. (W)20 Maximum Operating Temp (øC)150õ I(CBO) Max. (A)1.0m÷ @V(CBO) (V) (Test Condition)600 V(CE)sat Max. (V)3.0 @I(C) (A) (Test Condition)8.0

M-988

Abstract: BU306F 307F BU307F BU306
Contextual Info: bbSB'JBl GG1.ÖSL1 1 DEVELOPMENT DATA BU306F BU307F This data sheet contains advance Information and specifications are subject to change without notice. N AMER PHILIPS / D I S CR E T E 2SE D T-33'Ö? SILICON DIFFUSED POWER TRANSISTORS High-voltage, high-speed, glass-passivated npn power transistor in a SOT186 envelope with electrically

up 3080 lg

Abstract: PS 307 5A B1056 PS 307 2A 307F BU306F BU307F lg-5a ic 7294
Contextual Info: 11 GOlöSbl 1 DEVELOPM ENT DATA BU306F BU307F This data sheet contains advance Information and specifications are subject to change without notice. N AMER PH IL IPS /DISCRETE 2SE D T-33-Ö? SILICON DIFFUSED POWER TRANSISTORS High-voltage, high-speed, glass-passivated npn power transistor in a SOT186 envelope with electrically

BU306A

Abstract: C101 SN74CB3Q3306A SN74CB3Q3306APW SN74CB3Q3306APWR BU306
Contextual Info: SN74CB3Q3306A DUAL FET BUS SWITCH 2.5-V/3.3-V LOW-VOLTAGE HIGH-BANDWIDTH BUS SWITCH www.ti.com SCDS113D – DECEMBER 2002 – REVISED APRIL 2005 • FEATURES • • • • • • • 1 High-Bandwidth Data Path (up to 500 MHz (1) 5-V-Tolerant I/Os With Device Powered Up or

BU306A

Abstract: C101 SN74CB3Q3306A SN74CB3Q3306APW SN74CB3Q3306APWR BU306
Contextual Info: SN74CB3Q3306A DUAL FET BUS SWITCH 2.5-V/3.3-V LOW-VOLTAGE HIGH-BANDWIDTH BUS SWITCH www.ti.com SCDS113D – DECEMBER 2002 – REVISED APRIL 2005 • FEATURES • • • • • • • 1 High-Bandwidth Data Path (up to 500 MHz (1) 5-V-Tolerant I/Os With Device Powered Up or

Contextual Info: SN74CB3Q3306A www.ti.com SCDS113E – DECEMBER 2002 – REVISED JANUARY 2011 Dual FET Bus Switch 2.5-V/3.3-V Low-Voltage High-Bandwidth Bus Switch Check for Samples: SN74CB3Q3306A FEATURES • 1 • • • • • • • 1 (1) High-Bandwidth Data Path (up to 500 MHz )

BU306

Abstract: SN74CB3Q3306PWR
Contextual Info: SN74CB3Q3306 DUAL SWITCH 2.5ĆV/3.3ĆV LOWĆVOLTAGE, HIGHĆBANDWIDTH FET BUS SWITCH SCDS113A – DECEMBER 2002 – REVISED DECEMBER 2002 D Low and Flat On-State Resistance ron D D D D D D D D High-Bandwidth Data Path (Up To 533 MHz) D Low Power Consumption

BU306A

Abstract: C101 SN74CB3Q3306A SN74CB3Q3306APW SN74CB3Q3306APWR BU306
Contextual Info: SN74CB3Q3306A DUAL FET BUS SWITCH 2.5-V/3.3-V LOW-VOLTAGE HIGH-BANDWIDTH BUS SWITCH www.ti.com SCDS113D – DECEMBER 2002 – REVISED APRIL 2005 • FEATURES • • • • • • • 1 High-Bandwidth Data Path (up to 500 MHz (1) 5-V-Tolerant I/Os With Device Powered Up or

Contextual Info: SN74CB3Q3306A DUAL FET BUS SWITCH 2.5-V/3.3-V LOW-VOLTAGE HIGH-BANDWIDTH BUS SWITCH www.ti.com SCDS113D – DECEMBER 2002 – REVISED APRIL 2005 • FEATURES • • • • • • • 1 High-Bandwidth Data Path (up to 500 MHz (1) 5-V-Tolerant I/Os With Device Powered Up or

BU306A

Contextual Info: SN74CB3Q3306A DUAL FET BUS SWITCH 2.5-V/3.3-V LOW-VOLTAGE HIGH-BANDWIDTH BUS SWITCH www.ti.com SCDS113D – DECEMBER 2002 – REVISED APRIL 2005 • FEATURES • • • • • • • 1 High-Bandwidth Data Path (up to 500 MHz (1) 5-V-Tolerant I/Os With Device Powered Up or

transistor f6 13003

Abstract: equivalent transistor bj 131-6 transistor Eb 13003 BM BB112 smd TRANSISTOR code marking 2F 6n a1211 lg CQY58 BU705 TRANSISTOR 131-6 BJ 026 philips om350
Contextual Info: W IDEBAND TRANSISTORS AND W IDEBAND HYBR ID 1C MODULES page P refa ce. 3 Selection guide Wideband transistors.

SN74CB3Q3306A

Abstract: SN74CB3Q3306APW SN74CB3Q3306APWR BU306A C101
Contextual Info: SN74CB3Q3306A DUAL FET BUS SWITCH 2.5ĆV/3.3ĆV LOWĆVOLTAGE, HIGHĆBANDWIDTH BUS SWITCH SCDS113D − DECEMBER 2002 − REVISED NOVEMBER 2003 D High-Bandwidth Data Path D D D D D D D Data and Control Inputs Provide Up to 500 MHz† 5-V Tolerant I/Os with Device Powered-Up

Contextual Info: SN74CB3Q3306A www.ti.com SCDS113E – DECEMBER 2002 – REVISED JANUARY 2011 Dual FET Bus Switch 2.5-V/3.3-V Low-Voltage High-Bandwidth Bus Switch Check for Samples: SN74CB3Q3306A FEATURES • 1 • • • • • • • 1 (1) High-Bandwidth Data Path (up to 500 MHz )

Contextual Info: SN74CB3Q3306A www.ti.com SCDS113E – DECEMBER 2002 – REVISED JANUARY 2011 Dual FET Bus Switch 2.5-V/3.3-V Low-Voltage High-Bandwidth Bus Switch Check for Samples: SN74CB3Q3306A FEATURES • 1 • • • • • • • 1 (1) High-Bandwidth Data Path (up to 500 MHz )

Contextual Info: SN74CB3Q3306A DUAL FET BUS SWITCH 2.5-V/3.3-V LOW-VOLTAGE HIGH-BANDWIDTH BUS SWITCH www.ti.com SCDS113D – DECEMBER 2002 – REVISED APRIL 2005 • FEATURES • • • • • • • 1 High-Bandwidth Data Path (up to 500 MHz (1) 5-V-Tolerant I/Os With Device Powered Up or

Contextual Info: SN74CB3Q3306A www.ti.com SCDS113E – DECEMBER 2002 – REVISED JANUARY 2011 Dual FET Bus Switch 2.5-V/3.3-V Low-Voltage High-Bandwidth Bus Switch Check for Samples: SN74CB3Q3306A FEATURES • 1 • • • • • • • 1 (1) High-Bandwidth Data Path (up to 500 MHz )

Contextual Info: SN74CB3Q3306A DUAL FET BUS SWITCH 2.5-V/3.3-V LOW-VOLTAGE HIGH-BANDWIDTH BUS SWITCH www.ti.com SCDS113D – DECEMBER 2002 – REVISED APRIL 2005 • FEATURES • • • • • • • 1 High-Bandwidth Data Path (up to 500 MHz (1) 5-V-Tolerant I/Os With Device Powered Up or

Contextual Info: SN74CB3Q3306A www.ti.com SCDS113E – DECEMBER 2002 – REVISED JANUARY 2011 Dual FET Bus Switch 2.5-V/3.3-V Low-Voltage High-Bandwidth Bus Switch Check for Samples: SN74CB3Q3306A FEATURES • 1 • • • • • • • 1 (1) High-Bandwidth Data Path (up to 500 MHz )

BU306A

Abstract: C101 SN74CB3Q3306A SN74CB3Q3306ADCUR SN74CB3Q3306APW SN74CB3Q3306APWR BU306 SCDS113E ga6r
Contextual Info: SN74CB3Q3306A www.ti.com SCDS113E – DECEMBER 2002 – REVISED JANUARY 2011 Dual FET Bus Switch 2.5-V/3.3-V Low-Voltage High-Bandwidth Bus Switch Check for Samples: SN74CB3Q3306A FEATURES • 1 • • • • • • • 1 (1) High-Bandwidth Data Path (up to 500 MHz )

Contextual Info: SN74CB3Q3306A www.ti.com SCDS113E – DECEMBER 2002 – REVISED JANUARY 2011 Dual FET Bus Switch 2.5-V/3.3-V Low-Voltage High-Bandwidth Bus Switch Check for Samples: SN74CB3Q3306A FEATURES • 1 • • • • • • • 1 (1) High-Bandwidth Data Path (up to 500 MHz )

BU306A

Abstract: C101 SN74CB3Q3306A SN74CB3Q3306APW SN74CB3Q3306APWR BU306
Contextual Info: SN74CB3Q3306A DUAL FET BUS SWITCH 2.5ĆV/3.3ĆV LOWĆVOLTAGE, HIGHĆBANDWIDTH BUS SWITCH SCDS113D − DECEMBER 2002 − REVISED NOVEMBER 2003 D High-Bandwidth Data Path D D D D D D D Data and Control Inputs Provide Up to 500 MHz† 5-V Tolerant I/Os with Device Powered-Up

BGY41

Abstract: BFW10 FET transistor CQY58 germanium RX101 equivalent components FET BFW10 bd643 bf199 283 to92 600a transistor zener phc
Contextual Info: SMALL-SIGNAL FIELD-EFFECT TRANSISTORS page Selection guide N-channel junction field-effect transistors general purpose. for differential am plifiers.