25RNA Search Results

Contextual Info: , Unc. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 Silicon PNP Power Transistor 2SA768 w DESCRIPTION • Collector-Emitter Breakdown Voltage- » • I \N 1.BASE :V(BR)CEO= -60(V)(Min.) • Complement to Type 2SC1826

Contextual Info: >• r/g5 > n y j x i y n CMOS 8-B it DAC with Output A m plifier Features ♦ D ouble b u ffere d interface lo g ic is in clu d e d to allow s im u ltan e o u s up d atin g in system s w h ich have several DAC channels in o p e ration. C o n tro l is p ro v ided by

Contextual Info: ICS9175 Integrated Circuit Systems, Inc. Low Skew Output Buffer General Description Features The 1CS9175 is designed to generate low skew clocks forclock distribution in high perform ance PCs and workstations. Using a 14 3 18 M Hz crystal and phase-locked loop technology, six

016Z

Abstract: IS121 MWA0204 MWA0211 MWA0270 L25-100
Contextual Info: Order this data sheet by MWA0204/D MOTOROLA TECHNICAL DATA MWA0204 MWA0217 ,L MWAO Monolithic Microwave Integratedcircuit . . . designed for narrow or wideband systems IF and RF applications in industrial and commercial up to 3 GHz. 12 dB Gain at 500 MHz Typ

P53-15L

Abstract: Polytron Devices P35-12 polytron P52-15 P53-1580 p53-12 P521-2 polytron P33-12
Contextual Info: POLYTRON DEVICES INC 7547478 0000037 3 15E » i - b '- 0 3 LIN EAR EN C A PSU LA 7X 57-05 FEATURES: 1 • REGULATION FROM, STOCK • P.C. CARD OR CHASSIS MOUNTING • SHORT CIRCUIT PROTECTION • SINGLE, DUAL, TRIPLE OUTPUTS SPECIFICATIONS:B M INPUT VOLTAGE AND FREQUENCY:

Contextual Info: SEP8705 AIGaAs Infrared Emitting Diode FEATURES • T-1 package . 15° nominal beam angle • 880 nm wavelength • Consistent optical properties • Higher output than GaAs at equivalent drive current • Mechanically and spectrally matched to SDP8405 phototransistor and SDP8105

Contextual Info: , One. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 2SA958 Silicon PNP Power Transistor w DESCRIPTION PIN 1.6ASE • Collector-Emitter Breakdown Voltage 2.COLLECTOR 3.HWIITTER : V(BR)CEO= -200V(Min)

HMXR-5001

Abstract: 13001 YF 09 TRANSISTOR HP 5082 7000 5082-0825 33150A 2N6838 Hxtr 3101 Hxtr 3101 transistor 5082-2815 hsch-1001
Contextual Info: For Complete . Application &Sales . '. Information ' ,.' • Call ' Joseph Masarich Sales Representative HEWLETT PACKARD . NEELY "Sales Region 3003 scon BLVD. SANTA CLARA, CA 95050 408 988-7234 Microwave Semiconductor Diode and Transistor Designers Catalog

Contextual Info: TO SHIBA TLP550 TOSHIBA PHOTOCOUPLER ti INFRARED LED + PHOTO IC P <5 <5n Unit in mm DEGITAL LOGIC ISOLATION LINE RECEIVER FEEDBACK CONTROL POWER SUPPLY CONTROL SWITCHING POWER SUPPLY TRANSISTOR INVERTOR TLP550 constructs a high emitting diode and a one chip photo diodetransistor.

NHDS-04

Abstract: nhds-08 NHDS-02 NHDS-06 213B nhds switch
Contextual Info: PRODUCTS DIMENSIONS CONTACT SYSTEM OF NHDS SERIES m A H alf Pitch [i ,27mm terminal. A G d d -p la te d electiical contacts are the standard specification. Lj7i<£ l) J. Z7 PtTCII 1. D50] MATERIALS ABASE: JL94V-Q NYLON Thermoplastic. Color: Black. ACOVER; UL94V-0 NYlON Thermoplastic.