IS121 Search Results

IS121

Abstract: TLP121 IS121A IS121B IS121C IS121D
Contextual Info: IS121 HIGH DENSITY MOUNTING PHOTOTRANSISTOR OPTICALLY COUPLED ISOLATORS DESCRIPTION The IS121 is an optically coupled isolator consisting of an infrared light emitting diode and NPN silicon photo transistor in a space efficient dual in line plastic package.

IS121

Abstract: FPT1 TOSHIBA PHOTOTRANSISTOR SILICON NPN IS121A IS121B IS121C IS121D TLP121 toshiba phototransistor npn
Contextual Info: IS121 HIGH DENSITY MOUNTING PHOTOTRANSISTOR OPTICALLY COUPLED ISOLATORS Dimensions in mm DESCRIPTION The IS121 is an optically coupled isolator consisting of an infrared light emitting diode and NPN silicon photo transistor in a space efficient dual in line plastic package.

DARLINGTON

Abstract: IS2705-1 IS181 IS355 transistor IS354A IS357 IS127 IS354 MOCD207
Contextual Info: Mini Flat Package Mini Flat Package With its small outline package, the Mini Flat Coupler is ideally suited for high density surface mount applications. - 4 PIN TRANSISTOR OUTPUT : IS121, IS181, IS2701-1, IS357, IS357A, IS357B, IS357C, IS357D - 4 PIN AC INPUT : IS126, IS2705-1, IS354, IS354A

IS121C

Abstract: IS121 IS121A IS121B IS121D TLP121 FPT1
Contextual Info: IS121 HIGH DENSITY MOUNTING PHOTOTRANSISTOR OPTICALLY COUPLED ISOLATORS DESCRIPTION The IS121 is an optically coupled isolator consisting of an infrared light emitting diode and NPN silicon photo transistor in a space efficient dual in line plastic package.

Contextual Info: Thp% H E W L E T T WLUM P A C K A R D Low N oise, Cascadable Silicon Bipolar MMIC Amplifier Technical Data INA-01100 Features • Cascadable 50 Q Gain Block • Low N oise Figure: 1.7 dB Typical at 100 MHz • High Gain: 32.5 dB Typical at 100 MHz • 3 dB Bandwidth:

Contextual Info: S IE M E N S CFY66 HiRel K-Band GaAs Super Low Noise HEMT • HiRel Discrete and Microwave Semiconductor • Conventional AIGaAs/GaAs HEMT For new design we recommend to use our pseudo-morphic HEMT CFY67 • For professional super low-noise amplifiers •

MRF5711LT1

Abstract: MRF571 MBR571 MPS571 E4E SOT23 vqb 71 LG 631 IC Motorola TE 2198 MBR571LT1
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line MMBR571LT1 MPS571 MRF571 MRF5711LT1 NPN Silicon High-Frequency TVansistors Designed for low noise, wide dynamic range fron t-e nd amplifiers and low-noise VCO’s. Available in a surface-mountable plastic package, as well as

V23082-A1005-A401

Abstract: V23082 relay mini schrack ra 900 A23001-G11-P038-X-7600 siemens modules GR 60 48 V 120 A siemens 230 98 L-1017 L1017 vde 0435 0110 Gr C
Contextual Info: Miniature Power Relay Mini L Product Information Miniature Power Relay Mini L V23082 PCB relay for DC voltage, neutral, monostable Features ● High switching capacity of 10 A, small dimensions ● High ambient temperature of 85 °C ● Clearance and creepage distances of the basic insulation

IS1212

Contextual Info: Wag H EW LETT K ILM PA CK ARD Low Noise, Cascadable Silicon Bipolar MMIC Amplifier Technical Data INA-10386 Features • C ascadable 50 £2 Gain B lock • 3 dB Bandwidth: DC to 1.8 GHz • 26 dB Typical Gain at 1.5 GHz • 10 dBm Typical P ldB a t 1.5 GHz

MWA0311

Abstract: MWA0370 1S221 IS121 MWA0304 rf 157 L4166 mwa03
Contextual Info: — Order this data sheet by MWA0304/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA MWA0304 MWA0311 ,L - MWA0370 Monolithic Microwave Integrated Circuit . . . designed for narrow or wideband systems up to 3 GHz. . IF and RF applications in industrial and commercial

IN 5406

Abstract: F24G 1S121 M 16100 39 2 1019
Contextual Info: Jft, HSXAWAVS Hexawave, Inc. C-Band Non-Via Hole Chip Description The following parts are presently offered in chip form. They are fabricated by Hexawave 0.7^m gate length, nchannel MESFET process, non -via hole device, designed for various C-Band applications.

is84 scr

Abstract: IS156 1S121 IS120A IS154 IS84 1s152 scr is100a
Contextual Info: Thyristors - SCR's. The plastic material came« U/L recognition 94 V-O. Max. Repetitive Maximum RMS Peak Off - State On * State Current and Reverse alT c » 50 °C TYPE Voilage It r m s Vdrm &. Vrkm (A) (V) Maximum Peak Surge On - State Current ( Note 1 )

MRF951

Contextual Info: Order this data sheet by MRF951/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon Low Noise, High-Frequency Transistors r MRF951 MMBR951,L MRF9511,L . . . designed for use in high gain, low noise small-signal amplifiers. This series features

Contextual Info: Wtipt mLUM HEW LETT PA C K A R D Low Noise, Cascadable Silicon Bipolar MMIC Amplifier Technical Data INA-02100 Features • Cascadable 50 Q Gain Block • Low Noise Figure: 2.0 dB Typical at 0.5 GHz • High Gain: 31.5 dB Typical at 0.5 GHz 25.0 dB Typical at 1.5 GHz

Contextual Info: Thp\ H E W L E T T mLEM P A C K A R D Low N oise, Cascadable Silicon Bipolar MMIC Amplifier Technical Data INA-10386 F eatures • Cascadable 50 Q Gain Block • 3 dB Bandwidth: DC to 1.8 GHz • 26 dB Typical Gain at 1.5 GHz • 10 dBm Typical PldB at 1.5 GHz

IS242

Contextual Info: xppower.com Specification • Regulated Single Output • SIP Package • 1000 VDC Isolation • Optional 3000 VDC Isolation • Continuous Short Circuit Protection • Non-conductive Black Plastic Case • MTBF >1.5 MHrs Input Voltage Input No Load Input Current

siemens V23026

Abstract: HS-180 siemens HS-180
Contextual Info: SIEMENS Miniature Relays P1 Product Information Miniature Relay P1 V23026 PCB relays - Pin or SMD for DC operation, polarised, monostable or bistable F e a tu re s V e rs io n s • Universal ultra m iniature relay with optimum capabilities - • Directly triggerable with T TL standard modules such as

V23148-B0005-A101

Abstract: siemens modules GR 60 48 V 120 A bistable impulse relay siemens 22721 K.50 E Type siemens relay V23148 A101 V23148 -B0010-A101 V23148-B0005A101 siemens V23148 vde 0435 0110 Gr C
Contextual Info: o Miniature Power Relays U and UB y Product Information Miniature Power Relays U and UB V23148 PC board relays for DC, neutral, monostable or bistable remanence types Features • A compact, low-cost PC board relay for switching supply voltages • High switching capacity combined with small dimensions

MHW721A2

Abstract: 13001 S 6D TRANSISTOR atv5030* motorola 2N5591 MOTOROLA 13001 6D TRANSISTOR BGY41 MHW710-1 construction linear amplifier 2sc1945 7119 amperex bf503
Contextual Info: Volume I Selector Guide 1 Discrete Transistor Data Sheets 2 Case Dimensions 3 Volume II Selector Guide Amplifier Data Sheets 5 Tuning, Hot Carrier and PIN Diode Data Sheets 6 Technical Information Case Dimensions 8 Cross Reference and Sales Offices 9 MOTOROLA RF DEVICE DATA

NE202 circuit

Abstract: NE202 NE20200 NE20248 NE20283A NE202XX 1400 88 pm BH574
Contextual Info: L NEC N E C / 1SE D CALIFORNIA • b427414 OQOISÌO T'3l -¿S' S ULTRA LOW NOISE K-BAND HETERO JUNCTION FET NE202 SERIES OUTLINE DIMENSIONS FEATURES • LOW NOISE FIGURE: 1 dB TYP at f = 12 GHz NE202XX 1.2 dB TYP at f = 12 GHz (NE202XX-1.4) 1.8 dB TYP at f = 18 GHz (NE20248)

IS242

Abstract: IS1209 IS1212
Contextual Info: xppower.com Specification • Regulated Single Output • SIP Package • 1000 VDC Isolation • Optional 3000 VDC Isolation • Continuous Short Circuit Protection • Non-conductive Black Plastic Case • MTBF >1.1 MHrs Input Voltage Input No Load Input Current

IN647

Abstract: IN645 CA500 diode oa202 TID125 TID126 TID139N 100v 500ma diode IS113 OA202
Contextual Info: T In e x a s D io de A rra y s P lastic D u a l-In -L in e Package < W orking Voltage 3 Av. Rect. Current General Purpose Diodes Max. Forward Voltage V g. IF IS920 IS921 IS922 IS923 IS924 DO -35 DO -35 DO -35 DO -35 DO -35 200 200 200 200 200 50 100 150 200

Contextual Info: S WIRE LE SS E M I C N D U C T 0 R , I N C C O M M U N I C A T I O N S 3-V Low-Current Downconverter 1C The TQ9223B 3V RFIC Downconverter is an RF receiver 1C front end designed for the high dynamic range cellular com m unications standards. The TQ9223B provides a

GR-15110

Abstract: L-1017 7387-17
Contextual Info: Siemens Components Service: - at your disposal throughout Europe Belgium Siemens S.A. Chaussée de Charleroi 116 B-'OeO Bruxelles S 02 536-2348 HSSP (02)536-2857 Great Britain Siemens pic Siemens House Oldbury Bracknell GB-RG 12 8FZ 0 (01344)396-670 js g (01344)396-671