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    25B1A Search Results

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    Amphenol Corporation

    Amphenol Corporation MS27468E25B1AB

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    Amphenol Corporation MS27467E25B1A

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    Mouser Electronics MS27467E25B1A
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    Amphenol Corporation MS27467E25B1AB

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    Amphenol Corporation MS27467E25B1AD

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    Amphenol Corporation MS27467E25B1AA

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    25B1A Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    2SC1682

    Abstract: 1-23AL 2sc low noise 2SC16 251C B04T Produced by Perfect Crystal Device Technology 2-5B1A
    Contextual Info: 25C1682 5 /'JD >N P N Iti^i/?JW B h 5>y ^ P C T Ä Ä ^ IL IC O N NPN EPITAXIAL TRANSISTOR (PCT U n it o Low N o i s e A u d io A m p lifie r : 0 5.8 MAX. A p p lic a t io n s N F = 3 d B ( Max.; in R g = lO k Q f = 1 kH z : h p j¡ = z o o ~ 700 0Û45 «


    OCR Scan
    2sc1682101in500x2100ila+71-23al2sc low noise2sc16251cb04tproduced by perfect crystal device technology2-5b1a PDF

    2SA429

    Abstract: C780A u225 c011m 2SA429-O 2SA42 Produced by Perfect Crystal Device Technology nztl IR00
    Contextual Info: /UD>PNP=*ffii0Bh5:/S>;*5> PCT7DÍC LICON PNP TRIPLE DIFFUSED TRANSISTOR (PCT PROCESS), iiif INDUSTRIAL APPLICATIONS o •= • 9 -y « & a m o N ix ie Tube D r iv e r A p p lic a tio n s o H igh V o lta g e S w itc h in g Applications- ; : V C B0 =-150V


    OCR Scan
    -150v2sa429-251cc780a+7u225c011m2sa429-o2sa42produced by perfect crystal device technologynztlir00 PDF

    2SC982

    Abstract: 2SC 982 2sc 3050 transistor A3051
    Contextual Info: 5sUHyNPNX£5>*5/PJ\;7Ls-j-B5r-Uy h y h ^ y s J z ? SILICON NPN EPITAXIAL PLANAR DARLINGTON TRANSISTOR 7 P M A LID KH / 1 m i t i INDUSTRIAL APPLICATIONS o o P r i n t e r D r i v e , C o r e D r i v e a n d LED D riv e A p p lic a tio n s Low F r e q u e n c y A m p l i f i e r A p p l i c a t i o n s


    OCR Scan
    ic-10ma2sc9822sc 9822sc 3050 transistor+1a3051 PDF

    2SC381

    Abstract: TRANSISTOR 2SC 2SC381-0 2SC381-BN 2SC381-R Na3 sot YT 1617
    Contextual Info: ^ ' J D y N P N X \ ^ 5 > ^ 7 ’ \y7 l y - t m h ^ y V 7 , 5 > SILICON NPN EPITAXIAL PLANAR TRANSISTOR . 2SC 381 Unit in mm o PM IP Amplifier Applications - 0.65pP Typ. ) co ‘rt3b/^S/J'^ ^ •' °o •rt>V = lOps (Typ.) Ä K X lf f lf t - C - f : (}pe = 2 9 d B ( f — 1Q7MHZ) (Typ.)


    OCR Scan
    a65pf2sc381transistor 2sc2sc381-0+42sc381-bn2sc381-rna3 sotyt 1617 PDF

    TRANSISTOR nf 841

    Abstract: NF 841 2SA841 2SA841BL 2SA841-BL TRANSISTOR 2Sa841 transistor 2SA TRANSISTOR 841 2SA amplifier 2SA transistor
    Contextual Info: 2s a 841 5/ U D > P N P I t i ^ 2/^ W B S 5 > y ^ P C T B S C ^ IL IC O N PNP EPITAXIAL TRANSISTOR (P C T PROCESS) o fi js m.<&m t * is m o Low N o i s e Audio Am plifier Applications Uni t i n Bin ^ 5 . 8 MAX,. : ^CEO = - 6 0V : NF = 6 d B ( M a x . ) / R g =« 1100kkS2


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    2sa841100/la100-mtransistor nf 841+8nf 8412sa841bl2sa841-bltransistor 2sa841transistor 2satransistor 8412sa amplifier2sa transistor PDF

    2SC733

    Abstract: transistor 2sc733 GR 733 2sc735 2SC733 GR 2SC733-Y transistor bf 458 2SC733BL TRANSISTOR 2SC 458 TRANSISTOR 2SC 733
    Contextual Info: ì / ' J D > N P N I ^ ^ r 5/? J W B h 5 > SILICON o NPN EPITAXIAL ^ TRANSISTOR 2s c 733 9 P C T £ Ä (P C T PROCES^ Audio Ampli f i e r Applications Unit in m m 05.8MAX. • 2SC735 • BJ&P-F 04.95MAX. i“o R e c o m m e n d ed for Driver Stage in Claes


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    8sc7352sc7352sc7333sc733-qr+13a4l018sc733-bl2sc733-0r270hz8s0733-bltransistor 2sc733gr 7332sc733 gr2sc733-ytransistor bf 4582sc733bltransistor 2sc 458transistor 2sc 733 PDF

    2SC373

    Abstract: transistor 2sc373 2sc372 transistor 2SC372 2SC372 2SC373 2SC372 transistor 2sc373 toshiba 2SA495 2SC37 NPN 2sc372
    Contextual Info: 2SC3 2 G 2 / U D > N P N Z t i ^ 5 / ? ;W B h 5 > 5 ;^ P C T S S C SILICON NPN EPITAXIAL TRANSISTOR ( PCT PROCES^^ 2S c 3 3 G O O a f t ! # « yf- INDUSTRIAL APPLICATIONS o H ig h Frequency A m p li fie r A p p lic a t io n s o H igh Speed S w itc h in g A p p lic a t io n s


    OCR Scan
    2sa4952sc3722sc373transistor 2sc373+6transistor 2sc3722sc372 2sc3732sc372 transistor2sc373 toshiba2sc37npn 2sc372 PDF

    2SA493

    Abstract: 2sc1000 transistor 2sC1000 2SC1000 GR ttl nim 251C Produced by Perfect Crystal Device Technology 2SC1000 bl
    Contextual Info: ' 2 s a 493 g i> \ j3 y p H ^ IL IC O N PNP P x ^ ^ jj> m EPITAXIAL ^ y V TRANSISTOR 7 , /9 { . p c j J 5 % PCT PROCESS) O o iiit Low Noise Àudio Amplifier Applications INDUSTRIAL APPLICATIONS * » Œ T i- V0E0 — Unit in mm 50V N F = 2d B (M a x .) ( Rg = lO k Q , f = 120H z


    OCR Scan
    2sa493g120hz2sc10002sa493+9180hz3sa4938sa493transistor 2sc10002sc1000 grttl nim251cproduced by perfect crystal device technology2sc1000 bl PDF