256K X 8 SRAM DIP Search Results

AS5C2008

Contextual Info: AUSTIN SEMICONDUCTOR, INC. AS5C2008 883C 256K x 8 SRAM SRAM 256K x 8 SRAM O U TPU T ENABLE, E VO LU TIO N A R Y PINO UT AVAILABLE AS MILITARY SPECIFICATION • MIL STD-883 PIN ASSIGNMENT Top View 32-Pin DIP FEATURES High Speed: 20, 25, 35ns High-performance, low power, CMOS

Contextual Info: □PM Dense-Pac Microsystems, Inc. DPS256S8P 256K X 8 CMOS SRAM MODULE O DESCRIPTION: The DPS256S8P is a 256K X 8 high-density, low-power static RAM module comprised of two 128K X 8 monolithic SRAM 's, an advanced high-speed C M O S decoder and decoupling

IDT71V256

Abstract: IDT71V256SA P28-2 A 3101 8 pin
Contextual Info: IDT71V256SA 3.3V CMOS STATIC RAM 256K 32K x 8-BIT  LOW POWER 3.3V CMOS FAST SRAM 256K (32K x 8-BIT) COMMERCIAL TEMPERATURE RANGE PRELIMINARY IDT71V256SA Integrated Device Technology, Inc. FEATURES • Ideal for high-performance processor secondary cache

Contextual Info: Commercial SRAM Products 256Kx8, 25 - 70ns, DIP 30A036-01 C 2 Megabit High Speed CMOS SRAM DPS256S8AP DESCRIPTION: The DPS256S8AP is a high speed 256K x 8 high-density, low-power static RAM module comprised of two high speed ceramic 128K x 8 monolithic SRAM’s, an advanced high-speed CMOS

C28A-E

Contextual Info: CYM1840 V CYPRESS 256K X 32 Static RAM Module F eatu res F u n ctio n a l D escrip tio n • High-density 8-megabil SRAM module The CYM1840 is a high-perform ance 8-megabit static RAM module organized as 256K words by 32 bits. This m odule is constructed from eight 256K x4 SRAM s in

Contextual Info: CYM1840 ' CYPRESS SEMICONDUCTOR 256K x 32 Static RAM Module Features Functional Description • High-density 8 -megabit SRAM module The CYM 1840 is a high-performance 8 -megabit static RAM module organized as 256K words by 32 bits. This module is constructed from eight 256Kx 4 SRAM s in

Contextual Info: FORCE Technologies 2 Megabit CMOS SRAM FTS256S8P DESCRIPTION: The FTS256S8P is a Military 256K X 8 high-density, low-power static RAM module comprised of two 128K x 8 monolithic SRAM’s, an advanced high-speed CMOS decoder and decoupling capacitors surface

Contextual Info: 2 Megabit CMOS SRAM DPS256S8P/DPS256S8PL/DPS256S8PLL DESCRIPTION: The DPS256S8P/PL/PLL is a 256K x 8 high-density, low-power static RAM module comprised of two 128K x 8 monolithic SRAM’s, an advanced high-speed CMOS decoder and decoupling capacitors surface

Contextual Info: FORCE Technologies 2 Megabit CMOS SRAM FTS256S8N DESCRIPTION: The FTS256S8N is a Military 256K X 8 high-density, low-power static RAM module comprised of two ceramic 128K X 8 monolithic SRAM’s, an advanced high-speed CMOS decoder and decoupling capacitors

Contextual Info: □PM DPS256S8AN Dense-Pac Microsystems, Inc. H IGH SPEED MILITARY 256K X 8 C M O S SRAM M O D ULE O ADVANCED INFORM ATION DESCRIPTION: The DPS256S8AN is a high speed military 256K X 8 high-density, low-power static RAM module comprised of two high speed ceramic 128K X 8 monolithic

Contextual Info: Order this data sheet by 8S256/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA Military 8S256 Advance Information 256K x 8 CMOS SRAM Multichip Module The Motorola 8S256 is a CMOS SRAM housed in a hermetically sealed ceramic 32 pin package. Featuring JEDEC standard pinouts, the device provides 256K bytes of

Contextual Info: PRELIMINARY S12C 256K SR A M D IE MICRON ft- n u —.m¡T. we. SRAM DIE 256K SRAM 2 5 6 K X 1, 6 4 K x 4 , 3 2 K x 8 FEATURES • Single 3.3V ±0.3V power supply 3.3V ±0.2V for 12ns and faster • 5V -tolerantI/0 • Common data inputs and data outputs (separate data

B628

Contextual Info: M628032 256K 32K x 8 VERY FAST SRAM WITH OUTPUT ENABLE DATA BRIEFING 32K x 8 VERY FAST SRAM with OUTPUT ENABLE EQUAL CYCLE and ACCESS TIMES: 12, 15, 20ns LOW VCC DATA RETENTION: 2V TRI-STATE COMMON I/O JEDEC PLASTIC SOJ and DIP, 300 mil PACKAGES 28 28 1

QMI2419

Abstract: CY7C197 CY7C199 precondition DIP JEDEC
Contextual Info: Cypress Semiconductor Product Qualification Report QTP# 001605 VERSION 1.0 October, 2000 256K FAST ASYNCHRONOUS SRAM R42HDHA Technology, Fab 4 CY7C194/195 64K x 4 Static RAM CY7C197 256K x 1 Static RAM CY7C198/199 32K x 8 Static RAM CYPRESS TECHNICAL CONTACT FOR QUALIFICATION DATA:

Contextual Info: □PM DPS256S8P Dense-Pac Microsystems, Inc. 256K X 8 CMOS SRAM MODULE O DESCRIPTION: The D P S256 S8P is a 256K X 8 high-density, low-power static RAM module comprised of two 1 2 8 K X 8 m o no lithic SR A M 's, an advanced high-speed C M O S d e co d er and deco upling

Contextual Info: 2 Megabit High Speed CMOS SRAM DPS256S8BN DESCRIPTION: The DPS256S8BN is a high speed military 256K x 8 high-density, static RAM module comprised of two high speed ceramic 128K x 8 monolithic SRAM’s, an advanced high-speed CMOS decoder and decoupling capacitors surface mounted on a co-fired ceramic

Contextual Info: □PM DPS6434 Dense-Pac Microsystems, Inc . , 64K X 32 CM OS SRAM M ODULE DESCRIPTION: The DPS6434 is a fully asyncronous Static Random Access Memory SRAM and may be organized as 64K X 3 2 ,1 2 8 X 16 or 256K X 8. T h e module is built with eight low-power C M O S

Contextual Info: <DPS256S8AN HIGH SPEED MILITARY 256K X 8 CMOS SRAM MODULE ADVANCED INFORMATION DESCRIPTION: The DPS256S8AN is a high speed m ilitary 256K X 8 high-density, lo w -po w er static RAM m odule com prised o f tw o high speed ceram ic 128K X 8 m o n o lith ic SRAM's, an advanced high-speed C M O S decoder and

Contextual Info: DENSE-PAC MICROSYSTEMS 2ÔE D CDPM Dense-Pac Microsystems, Inc. ^ • STSRMIS GDDüMTG H « » P C DPS256S8AN HIGH SPEED MILITARY 256K X 8 CMOS SRAM MODULE ADVANCED INFORMATION 7:y¿-23-/V DESCRIPTION: The DPS256S8AN is a high speed military 256K X 8 high-density, low-power static RAM module comprised

7M199

Contextual Info: _CY7M199 SEMICONDUCTOR 32K x 8 SRAM Module Features Functional Description • Very high speed 256k SRAM module — Access time o f 10 nsec. The CY7M199 is an extremely high per­ formance 256-kilobit static RAM module organized as 32,768 words by 8 bits. This

Contextual Info: MK48256 N,S -100/120 MK48256L(N,S)-100/120 SGS-THOMSON •y 256K (262,144-BIT) 32K x 8 CMOS SRAM □ BYTEWYDE 32K X 8 CMOS SRAM □ Equal Cycle/Access Times, 100,120ns max. □ Low Vcc Data Retention 2 Volts A 14 □ Three State Output □ FIGURE 1. PIN CONFIGURATION

WINBOND cross reference

Abstract: winbond WINBOND SRAM cross reference CYPRESS SAMSUNG CROSS REFERENCE sram cross reference Winbond Electronics IDT7164 IDT CROSS 64K X 4 SRAM CY7C199
Contextual Info: High-Speed SRAM Cross Reference Guide Density bits 64K Org. (bits) 8K*8 Package Type Company Winbond W2465A UTRON UT6164 ISSI IS61C64AH Cypress 256K 32K*8 CY7C185 Voltage 300-mil DIP X 5V X Speed (ns) SOJ SOP TSOP-I STSOP X 12 X X 10/12/15 X X 15/20/25 X

Contextual Info: CYM1400 ' — 32K x 8 SRAM Module PRELIMINARY CYPRESS SEMICONDUCTOR Features Functional Description • Very high speed 256K SRAM module T he C Y M 1400 is an extremely high performance 256-kilobit static RAM module organized as 32,768 words by 8 bits. This module is constructed using

SMD A7c

Abstract: A12CA
Contextual Info: This is a partial data sheet. F o r com plete data sheet, see Section 2, Static RAMs. CYM1400 _PRELIMINARY SEMICONDUCTOR 32K x 8 SRAM Module Features Functional Description • Very high speed 256K SRAM module The CYM1400 is an extremely high