1840P Search Results

Siemens QAH11

Abstract: NTC 6000 ntc siemens siemens air temperature sensors NTC 2500 QAH11 NTC 10-15 resistance type temperature sensors Siemens sensors H03VV-F2
Contextual Info: 1 1840P01 840 Cable temperature sensors QAH11. Use The sensors are for use in HVAC plants to acquire the temperature in fan coil units. Because of their insulation, the sensors are especially suited for use with controllers whose sensor signal input are not galvanically separated from the AC 230 V mains.

Contextual Info: CYM1840 sis riYPPFSS Tß = SEMICONDUCTOR 256K x 32 Static RAM Module Features Functional Description • High-density 8-megabit SRAM module T h e CYM 1840 is a high-perform ance 8-m egabit static R A M m odule organized as 256K w ords by 32 bits. This m odule is

Contextual Info: p yXpX : v « *1 CYM1840 - 256K x 32 Static RAM Module constructed from eight 256K x 4 SRAMs in SOJ packages mounted on an epoxy laminate substrate with pins. Four chip selects CS0, CSi, CS2, and CS3 are used to independently enable the four bytes. Two write enables (WE0 and W ^ ) are

CMPA2560025F

Abstract: CMPA2560025F-TB Cree Microwave c08bl242x C08BL242X-5UN-X0T
Contextual Info: CMPA2560025F 25 W, 2500 - 6000 MHz, GaN MMIC Power Amplifier Cree’s CMPA2560025F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium

C28A-E

Contextual Info: CYM1840 V CYPRESS 256K X 32 Static RAM Module F eatu res F u n ctio n a l D escrip tio n • High-density 8-megabil SRAM module The CYM1840 is a high-perform ance 8-megabit static RAM module organized as 256K words by 32 bits. This m odule is constructed from eight 256K x4 SRAM s in

CMPA2560025F

Abstract: 920pF
Contextual Info: CMPA2560025F 25 W, 2500 - 6000 MHz, GaN MMIC Power Amplifier Cree’s CMPA2560025F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium

Contextual Info: 256K x 32 Static RAM Module Features Functional D escription • H igh-density 8 -megabit SRAM module T he CYM1840 is a high-perform ance 8 -megabit static RAM m odule organized as 256K words by 32 bits. This m odule is constructed from eight 256K x4 SRAM s in

Contextual Info: CMPA2560025F 25 W, 2500 - 6000 MHz, GaN MMIC Power Amplifier Cree’s CMPA2560025F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium

CMPA2560025F

Abstract: CMPA2560025F-TB
Contextual Info: CMPA2560025F 25 W, 2500 - 6000 MHz, GaN MMIC Power Amplifier Cree’s CMPA2560025F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium

CMPA2560025F

Abstract: CMPA2560025F-TB JESD22 A114D
Contextual Info: CMPA2560025F 25 W, 2500 - 6000 MHz, GaN MMIC Power Amplifier Cree’s CMPA2560025F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium

Contextual Info: CMPA2560025F 25 W, 2500 - 6000 MHz, GaN MMIC Power Amplifier Cree’s CMPA2560025F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium

CMPA2560025F

Abstract: RF-35-0100-CH c08bl242x Cree Microwave CMPA2560025F-TB transistor on 4408
Contextual Info: PRELIMINARY CMPA2560025F 25 W, 2500 - 6000 MHz, GaN MMIC Power Amplifier Cree’s CMPA2560025F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium

CMPA2560025F

Abstract: CMPA2560025F-TB c08bl242x
Contextual Info: CMPA2560025F 25 W, 2500 - 6000 MHz, GaN MMIC Power Amplifier Cree’s CMPA2560025F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium

CYM1840

Contextual Info: CYM1840 9 Srcypress 256K x 32 Static RAM Module Features Functional D escription • H igh-density 8 -megabit SRAM module • H igh-speed CM OS SRAMs — Access tim e of 2 0 ns • Independent byte a n d word controls • Low active power — 6.2W max. • SMD technology

Contextual Info: CYM1840 ' CYPRESS SEMICONDUCTOR 256K x 32 Static RAM Module Features Functional Description • High-density 8 -megabit SRAM module The CYM 1840 is a high-performance 8 -megabit static RAM module organized as 256K words by 32 bits. This module is constructed from eight 256Kx 4 SRAM s in