256K X 8 DRAM Search Results

KM428C258

Contextual Info: PRELIMINARY KM428C258 CMOS VIDEO RAM 256K X 8 Bit CMOS Video RAM FEATURES GENERAL DESCRIPTION • Dual port Architecture 256K x 8 bits RAM port 512 x 8 bits SAM port • Performance range : The Samsung KM428C258 is a CMOS 256K x 8 bit Dual Port DRAM. It consists of a 256K x 8 dynamic random

KM428V256

Abstract: ram 256x8 KM428C256
Contextual Info: KM428C256, KM428V256 CMOS VIDEO RAM 256K X 8 Bit CMOS Video RAM FEATURES GENERAL DESCRIPTION ' Dual port Architecture 256K x 8 bits RAM port 512 x 8 bits SAM port • Performance range : The Samsung KM428C/V256 is a CMOS 256K x 8 bit Dual Port DRAM. It consists of a 256K x 8 dynamic random

Contextual Info: f 9 I VITELIC ADVANCED V105HJ8/9 256K x 8, 256K x 9 CMOS WRITE-PER-BIT MEMORY MODULE Description Features The V105HJ8/9 Memory Module is organized as 262,144 x 8 (or 9) bits in a 30-lead single-in-line module. The 256K x 8 memory module uses two Vitelic 256K x 4 (Write/Bit) DRAMs. The 256K x 9

53C256

Abstract: 53C104 V53C104
Contextual Info: MOSEL- VITELIC V104J8/9 256K x 8, 256K x 9 CMOS MEM ORY MODULE Features Description • ■ ■ ■ ■ ■ The V104J8/9 Memory Module is organized as 262,144 x 8 (or 9) bits in a 30-lead single-in-line module. The 256K x 8 memory module uses two Vitelic 256K x 4 DRAMs. The 256K x 9 memory

Contextual Info: I'V VrTEUC V105AJ8/9 256K X 8, 256K x 9 CMOS WRITE-PER-BIT MEMORY MODULE ADVANCED Features Description 262,144 x 8 (or x 9) bit organization • Utilizes 256K x 4 (Write/Bit) and 256K x 1 CMOS DRAMs ■ Fast Page mode operation ■ Write-Per-Bit feature

kje w6

Contextual Info: KM428C257 CMOS VIDEO RAM 256K X 8 Bit CMOS Video RAM GENERAL DESCRIPTION FEATURES The Samsung KM428C257 is a CMOS 256K x 8 bit Dual Port DRAM. It consists of a 256K x 8 dynamic random access memory RAM port and 512 x 8 static serial access memory (SAM) port.

KM428C257

Abstract: KM428C256 Video RAM G022134 mz57
Contextual Info: KM428C256 CMOS VIDEO RAM 256K X 8 Bit CMOS Video RAM GENERAL DESCRIPTION FEATURES The Samsung KM428C256 is a CMOS 256K x 8 bit Dual Port DRAM. It consists of a 256K x 8 dynamic random access memory RAM port and 512 x 8 static serial access memory (SAM) port.

KM428C257

Abstract: aatw
Contextual Info: PRELIMINARY KM428C257 CMOS VIDEO RAM 256K X 8 Bit CMOS Video RAM FEATURES GENERAL DESCRIPTION • Dual port A rchitecture The Samsung KM428C257 is a CMOS 256K x 8 bit Dual Port DRAM. It consists of a 256K x 8 dynamic random access memory RAM port and 512 x 8 static serial access

Contextual Info: MOSEL-VITELIC MOSEL- VITELIC b2E ì> • ^3533^1 GDDS311 755 « M O V I V104J8/9 256K x 8, 256K x 9 CMOS MEMORY MODULE Features Description ■ 262 ,1 4 4 x 8 (or x 9) bit organization ■ Utilizes 256K x 4 and 256K x 1 C M O S DRAMs ■ Fast Page mode operation

Contextual Info: I f ' VITEUC V104HJ8/9 256K x 8, 256K x 9 CMOS MEMORY MODULE PRELIMINARY Features Description * 262,144 x 8 (or x 9) bit organization The V104HJ8/9 Memory Module is organized as 262,144 x 8 (or 9) bits in a 30-lead single-in-line module. The 256K x 8 memory module uses two

104J32

Contextual Info: MOSEL- VITELIC PRELIMINARY V104J32, V104J36 256K x 32, 256K x 36 SIMM Features Description m The V104J32 M em ory Module is organized as 2 62.144 x 32 bits in a 72-lead single-in-line module. The 256K x 32 memory module uses 8 Mosel-Viteiic 256K x 4 DRAMs. The V104J36 is organized as

Contextual Info: I‘f VITEUC V104AJ8/9 256K x 8, 256K x 9 CMOS MEMORY MODULE PRELIMINARY Features Description • ■ ■ ■ ■ ■ The V104AJ8/9 Memory Module is organized as 262,144 x 8 (or 9) bits in a 30-lead single-in-line module. The 256K x 8 memory module uses two

Contextual Info: smart smart m e m o r y Modular Technologies Inc. m odule 256K x 8 OR 256K x 9 DRAM LOW PROFILE SMS58/9256ALP-7/8/10/12 TECHNICAL DATASHEET FEATURES GENERAL DESCRIPTION The SMS58256ALP and SMS48256ALP are high speed 256K x 8 dynamic RAM modules. Both have a 30 pin single in-line JEDEC

KSP 10 415

Abstract: VITELIC
Contextual Info: MOSEL VITELIC V104J8 V104J8 256K CMOS MEMORY MODULE Features Description • ■ ■ ■ ■ ■ The V104J8/9 Memory Module is organized as 262,144 x 8 bits in a 30-lead single-in-line module. The 256K x 8 memory module uses two Vitelic 256K x 4 DRAMs. Decoupling capacitors, mounted

Contextual Info: SAMSUNG ELECTRONICS INC b?E D • Vlhima G01b7Db 22T H S M G K PRELIMINARY KM428C258 CMOS VIDEO RAM 256K X 8 Bit CMOS Video RAM FEATURES GENERAL DESCRIPTION - Dual port A rchitecture 256K x 8 b its RAM port 512 x 8 bits SAM port ■ Performance range : The Samsung KM428C258 is a CMOS 256K x 8 bit Dual

intel i5 block diagram

Abstract: DYNAMIC RAM CONTROLLER intel 82c08 82C08 INTEL 32 lead PLCC 8208 intel IC 8208 82C06 82C08-10 b237
Contextual Info: intei 82C08 CHMOS DYNAMIC RAM CONTROLLER 0 Wait State with INTEL ^Processors iAPX 286 82C08-20 20 MHz 10, 8 MHz) I 82C08-16 16 MHz iAPX 186/88 } 82C08-10 10 MMz 86/88 I 82C08-8 8 MHz Supports 64K and 256K DRAMs (256K x 1 and 256K x 4 Organizations) Power Down Mode with Programmable

Contextual Info: M O S E L ViTEUC V104J8 256K C M O S MEMORY M ODULE Features Description • ■ ■ ■ ■ ■ The V104J8 Memory Module is organized as 2 62,144 x 8 bits in a 30-lead single-in-line module. The 256K x 8 memory module uses two Vitelic 256K x 4 DRAMs. Decoupling capacitors, mounted

SM58256A

Contextual Info: JUl 16 1993 SM58256A 256KByte 256K x 8 CMOS DRAM Module General Description Features The SM58256A is a high performance, 256Kbyte dynamic RAM memory module organized as 256K words by 8 bits, in a 30-pin, SIMM package. • • • The module utilizes two CMOS 256K x 4 dynamic RAMs

difference between intel 8086 and intel 80186 pro

Abstract: 82C08 intel 82c08 difference between intel 80186 and intel 80286 pro 82C08-8 80188 programming 82C08-10 intel 80186 pin out IC 8208 intel 8208
Contextual Info: in te i. 82C08 CHMOS DYNAMIC RAM CONTROLLER • ■ 0 Walt State with INTEL ^Processors iAPX 286 1 10, 8 MHz J iAPX 186/88 1 86/88 J 82C08-20 20 MHz 82C08-16 16 MHz 82C08-10 10 MHz 82C08-8 8 MHz ■ Supports 64K and 256K DRAMs (256K x 1 and 256K x 4 Organizations)

Contextual Info: ADVANCE 256K X MT43C256K8A1 8 TR IP L E -P O R T DRAM 256K X 8 DRAM WITH DUAL 5 1 2 x 8 SAMS TRIPLE-PORT DRAM FEATURES • • • • PIN ASSIGNMENT Top View Three asynchronous, independent, data-access ports Fast access times: 60ns random, 15ns serial

Contextual Info: SAMSUNG ELECTRONICS INC b?E » • 7 % 4 1 H E D01bb52 SSI KM428C256, KM428V256 CMOS VIDEO RAM 256K X 8 Bit CMOS Video RAM FEATURES GENERAL DESCRIPTION ■ Dual port Architecture 256K x 8 bits RAM port 512x8 bits SAM port • Performance range : The Samsung KM428C/V256 is a CMOS 256K x 8 bit Dual

Contextual Info: AK58256AG / AK58256AS 262,144 x 8 bit CMOS Dynamic Random Access Memory ACCUTEK DESCRIPTION Front View The Accutek AK58256AG/AS high density memory module is a random access memory organized in 256K x 8 bit words. The assembly consists of two 256K x 4 DRAMs in surface mount

Contextual Info: ADVANCE |v iic : r MT43C256K8A1 256K X 8 TRIPLE-PORT DRAM o n 256K X 8 DRAM WITH DUAL 5 1 2 x 8 SAMS TRIPLE-PORT DRAM FEATURES • • • • PIN ASSIGNMENT Top View Three asynchronous, independent, data-access ports Fast access times: 60ns random , 15ns serial

Contextual Info: ADVANCE MT43C256K8A1 256K X 8 TPDRAM |^ IC = R C 3 N TRIPLE PORT DRAM 256K X 8 DRAM WITH DUAL 512 x 8 SAMS FEATURES PIN ASSIGNMENT Top View Three asynchronous, independent, data access ports Fast access times - 60ns random, 15ns serial Operation and control compatible with 2 Meg VRAMS