256KX8BIT Search Results

HY62U8200LST

Contextual Info: HY62V8200- I /HY62U8200-(I) Series 256Kx8bit CMOS SRAM DESCRIPTION FEATURES The HY62V8200-(I)/HY62U8200-(I) is a high speed, low power and 2M bit CMOS SRAM organized as 262,144 words by 8bit. The HY62V8200-(I) / HY62U8200-(I) uses high performance CMOS process technology and

TSOPI

Contextual Info: HY62V8200B Series 256Kx8bit CMOS SRAM DESCRIPTION FEATURES The HY62V8200B is a high speed, low power and 2M bit CMOS SRAM organized as 262,144 words by 8bit. The HY62V8200B uses high performance CMOS process technology and designed for high speed low power circuit technology. It is

Contextual Info: HY62UF8200A/ HY62QF8200A/ HY62EF8200A/ HY62SF8200A Series 256Kx8bit full CMOS SRAM PRELIMINARY FEATURES DESCRIPTION • Fully static operation and Tri-state output • TTL compatible inputs and outputs • Battery backup LL/SL-part - 1.5V(min) data retention

Contextual Info: HY62V8200 Series 256Kx8bit CMOS SRAM DESCRIPTION FEATURES The HY62V8200 is a high speed, low power and 2M bit CMOS SRAM organized as 262,144 words by 8bit. The HY62V8200 uses high performance CMOS process technology and designed for high speed low power circuit technology. It is

Contextual Info: HY62V8200 Series 256Kx8bit CMOS SRAM Document Title 256K x8 bit 3.3V Low Power CMOS slow SRAM Revision History Revision No History Draft Date Remark 10 Initial Revision History Insert Revised - Improved operating current Icc1 : 60mA -> 35mA Change the Notch Location of sTSOP

Contextual Info: HY62U8200B Series 256Kx8bit CMOS SRAM Document Title 256K x8 bit 3.0V Low Power CMOS slow SRAM Revision History Revision No History Draft Date Remark 03 Initial Revision History Insert Revised - Improved operating current Icc1 : 60mA => 30mA Jul.29.2000 Final

buffer cmos 1.8V

Contextual Info: HY62UF8200/ HY62QF8200/ HY62EF8200/ HY62SF8200 Series 256Kx8bit full CMOS SRAM FEATURES DESCRIPTION • Fully static operation and Tri-state output • TTL compatible inputs and outputs • Battery backup LL/SL-part - 1.5V(min) data retention • Standard pin configuration

Contextual Info: M y Ti I g. R h - h U R KIIII HY62UF8200/ HY62QF8200/ HY62EF8200/ HY62SF8200 Series 256Kx8bit fuii c m o s s r a m PRELIMINARY DESCRIPTION FEATURES The HY62UF8200 / HY62QF8200 / HY62EF8200 / HY62SF8200 is a high speed, super low power and 2M bit full CMOS SRAM organized as

hy62u8200bll

Contextual Info: HY62U8200B Series 256Kx8bit CMOS SRAM DESCRIPTION FEATURES The HY62U8200B is a high speed, low power and 2M bit CMOS SRAM organized as 262,144 words by 8bit. The HY62U8200B uses high performance CMOS process technology and designed for high speed low power circuit technology. It is

Contextual Info: HY62U8200 Series 256Kx8bit CMOS SRAM Document Title 256K x8 bit 3.0V Low Power CMOS slow SRAM Revision History Revision No History Draft Date 10 Revision History Insert Revised - Improved operating current Icc1 : 60mA -> 30mA Change the Notch Location of sTSOP

Contextual Info: HY62V8200B Series 256Kx8bit CMOS SRAM Document Title 256K x8 bit 3.3V Low Power CMOS slow SRAM Revision History Revision No History Draft Date 03 Initial Revision History Insert Revised - Improved operating current Icc1 : 60mA -> 35mA Jul.29.2000 Final 04

256Kx8bit

Contextual Info: HY62UF8200/ HY62QF8200/ HY62EF8200/ HY62SF8200 Series 256Kx8bit full CMOS SRAM PRELIMINARY DESCRIPTION FEATURES The HY62UF8200 / HY62QF8200 / HY62EF8200 / HY62SF8200 is a high speed, super low power and 2M bit full CMOS SRAM organized as 262,144 words by 8bits. The HY62UF8200 /

HY62U8200LLST

Contextual Info: HY62V8200- I /HY62U8200-{I) Series 256KX8bit CMOS SRAM PRELIMINARY DESCRIPTION FEATURES The HY62V8200-(I)/HY62U8200-(I) is a high speed, low power and 2M bit CMOS SRAM organized as 262,144 words by 8bit. The HY62V8200-(I) / HY62U8200-(i) uses high performance CMOS process technology and

HY62U8200LLST

Contextual Info: HY62U8200 Series 256Kx8bit CMOS SRAM DESCRIPTION FEATURES The HY62U8200 is a high speed, low power and 2M bit CMOS SRAM organized as 262,144 words by 8bit. The HY62U8200 uses high performance CMOS process technology and designed for high speed low power circuit technology. It is

HT27C020

Abstract: 2048k eprom
Contextual Info: HT27C020 OTP CMOS 256Kx8-Bit EPROM Features • • • • • • • • Operating voltage: +5.0V Programming voltage – VPP=12.5V± 0.2V – VCC=6.0V± 0.2V High-reliability CMOS technology Latch-up immunity to 100mA from -1.0V to VCC+1.0V CMOS and TTL compatible I/O

29c51002

Contextual Info: M OSEL VITELIC V29C51002T/V29C51002B 2 MEGABIT 262,144x8-BIT 5 VOLT CMOS FLASH MEMORY PRELIMINARY Features Description • ■ ■ ■ ■ ■ The V29C51002T/V29C51002B is a high speed 262,144 x 8 bit CMOS flash memory. Programming or erasing the device is done with a single 5 Volt

IN3064

Abstract: V29LC51002
Contextual Info: MOSEL VITELIC V29LC51002 2 MEGABIT 262,144 x 8 BIT 5 VOLT CMOS FLASH MEMORY PRELIMINARY Features Description • ■ ■ ■ ■ The V29LC51002 is a high speed 262,144 x 8 bit CMOS flash memory. Writing or erasing the device is done with a single 5 Volt power supply. The

256Kx16bit

Abstract: 128KX16 HY628100B 512kx16bit SRAM SRAM 256kx16
Contextual Info: TABLE OF CONTENTS 1. TABLE OF CONTENTS Index 2. PRODUCT QUICK REFERENCE GUIDE Ordering Information 9 Quick Reference Guide 11 3. SRAM DATA SHEETS Low Power Dissipation SRAM 5.0V/3.3V/3.0V Operation 256K -b it SRAM GM76C256C 32Kx8-bit, 5.0V 19 GM76V256C 32Kx8-bit, 3.3V

Contextual Info: O K I Semiconductor M TC 8225716-xxOB1 Static RAM GENERAL DESCRIPTION TheMTC8225716-150Bl and MTC8225716-200B1 are 256Kbytes static RAM cards in conformity with the IC memory card guideline Ver.4.1 of the Japan Electronic Industry Development Association, Inc.

Contextual Info: ADVANCED 256KX8 FLASH MODULE FEATURES • Access times of 55, 70, 90ns • Built in decoupling caps for low noise operation • Organized as 256Kx8 • Operation with single 5 volt supply • Low power CMOS • TI L Compatible Inputs and Outputs • Packaging

TG3110

Contextual Info: HOLTEK HTG3110 Simple Voice Player Features • • • • • • • O perating frequency: 256kH z of RC oscillator O perating voltage: 2.4V~5.2V A utom atic power-on p lay with no standby mode Auto playback unlim ited One channel for voice output A 256xl0-bit |lROM of 8 to 10-bit |i-law table

Contextual Info: MOSEL VITELIC PRELIMINARY V29C51002T/V29C51002B 2 MEGABIT 262,144 x 8 BIT 5 VOLT CMOS FLASH MEMORY Features Description • ■ ■ ■ ■ ■ The V29C51002T/V29C51002B is a high speed 262,144 x 8 bit CMOS flash memory. Writing or erasing the device is done with a single 5 Volt

HT27LC020

Contextual Info: HT27LC020 OTP CMOS 256Kx8-Bit EPROM Features • • • • • • • • • • • • • • Operating voltage: +3.3V Programming voltage – VPP=12.5V±0.2V – VCC=6.0V±0.2V High-reliability CMOS technology Latch-up immunity to 100mA from -1.0V to

IN3064

Abstract: SYNCMOS s29c51002t
Contextual Info: SyncMOS Technologies Inc. S29C51002T/S29C51002B 2 MEGABIT 262,144 x 8 BIT 5 VOLT CMOS FLASH MEMORY Features Description • ■ ■ ■ ■ ■ TheS29C51002T/S29C51002B is a high speed 262,144 x 8 bit CMOS flash memory. Writing or erasing the device is done with a single 5 Volt